共查询到20条相似文献,搜索用时 359 毫秒
1.
A metal-semiconductor-metal detector with a InGaAs/GaAs superlattice active layer showing efficient photoresponse up to 1.35 μm is discussed. The active layer with an In composition of approximately 64% is grown by molecular beam epitaxy on a GaAs substrate at 460°C. The large size detector (200×200 μm2) shows bias-dependent DC gain, fast response speed (FWHM <50 ps), and reasonably low dark current 相似文献
2.
《Solid-State Circuits, IEEE Journal of》1974,9(5):269-276
The feasibility of using GaAs metal-semiconductor field-effect transistors (GaAs MESFET's) in fast switching and high-speed digital integrated circuit applications is demonstrated. GaAs MESFET's with 1-/spl mu/m gate length are shown to have a current-gain-bandwidth product f/SUB T/ equal to 15 GHz. These devices exhibit a 15 ps internal delay in a large-signal switching test. A simple logic circuit consisting of MESFET's and Schottky diodes was monolithically integrated on a semiinsulating GaAs substrate. This logic circuit exhibits a propagation delay of 60 ps with no output load, and 105 ps when its output is loaded by three similar logic gates. A useful bandwidth of approximately 3 GHz is observed. 相似文献
3.
A phase detector consisting of Schottky diode peak detector taps distributed along an integrated GaAs transmission line has been fabricated. Pulses counterpropagate on the line, forward biasing taps in the region of pulse overlap. The relative phase gain, determined from the captured overlap function, is 20 mV/ps.<> 相似文献
4.
《Electron Devices, IEEE Transactions on》1982,29(9):1420-1431
Different materials and different types of detectors are used for optical data communication in the wavelength range oflambda sim 0.8 µmlambda sim 1.7 µm. In this paper the behavior of p-n diodes, Mn and Mp Schottky diodes is evaluated as well as that of bipolar transistors, n-p-n and p-n-p, and of photoconductive detectors using n-type or p-type material. The different behavior of lateral and coaxial versions is shown taking into account contact and surface recombination. The gain, the bandwidth, the gain bandwidth product, and the rise time of all these types of fast detectors are given in terms of material and technological data, including the discussion of the different rise and fall times of some detector versions. Finally, a theoretical comparison is made between the detectors showing their different behavior and ultimate performance limit. For practical GaAs planar devices as a photoconductive detector, a p-n diode, a heterojunction n-p-n and a lateral n-p-n transistor, a Mn Schottky diode, and a totally depleted MnM structure (symmetrical Mott barrier) experimental data are given. They verify the theoretical prediction that with all types of detectors rise times of <100 ps can be achieved. 相似文献
5.
Three different 800-nm photodetectors were fabricated using an ion-implanted GaAs MESFET technology. No modifications to the MESFET process are necessary, making these detectors among the most easily integrable reported. The detectors are a photoconductor with an ion-implanted active region and a high photocurrent gain [27], a fast photodiode (FWHM < 53 ps), and a zero-bias photodiode, Accurate comparisons of reported detectors are sometimes difficult because results are influenced by differences in the processing, material, device dimensions, active area, and testing. These factors are identical for the three detectors reported, making a fair comparison among detector types possible. 相似文献
6.
Droge E. Schnabel R.F. Bottcher E.H. Grundmann M. Krost A. Bimberg D. 《Electronics letters》1994,30(16):1348-1350
High-speed long-wavelength metal-semiconductor-metal (MSM) photodetectors were fabricated on the Fe-doped InP/GaAs material system on Si. The detector layers were grown by MOCVD on exactly oriented Si(001) patterned with submicrometre pitch V-grooves. The devices show a fast impulse response (44 ps FWHM, 83 ps fall time) and a large bandwidth of 3.4 GHz for illumination with 1.31 μm light pulses at 5 V bias 相似文献
7.
Hofmann M.R. Gerhardt N. Wagner A.M. Ellmers C. Hohnsdorf F. Koch J. Stolz W. Koch S.W. Ruhle W.W. Hader J. Moloney J.V. O'Reilly E.P. Borchert B. Egorov A.Y. Riechert H. Schneider H.C. Chow W.W. 《Quantum Electronics, IEEE Journal of》2002,38(2):213-221
The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9·10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP-structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment 相似文献
8.
In the letter is reported the measurement of broadening of pulses in glass fibres using a GaAs injection laser diode as an emitter and a germanium photodiode as a detector. We found broadening of about 5 ps/m for a multimode fibre and 0.6 ps/m for a self-focusing glass fibre. 相似文献
9.
The letter reports the development of a fast-response bulk photoconductor that can be used as a photodetector and as an optically gated switch. The photoconducting material used is semi-insulating, chromium-doped GaAs, a sample of which is mounted in a 50? stripline holder. An estimated detector transition time of 92 ps or less was obtained from tests made with a mode-locked dye laser. 相似文献
10.
H. H. Wang J. F. Whitaker A. Chin J. Mazurowski J. M. Ballingall 《Journal of Electronic Materials》1993,22(12):1461-1464
The subpicosecond carrier lifetime of an unannealed molecular beam epitaxial layer of GaAs grown at ∼210°C has been demonstrated
between 10 and 290K through optoelectronic switching and all-optical pump-probe measurements. The low room-temperature resistivity
of the as-grown layers, believed to arise from hopping conductivity through defect sites, has been observed to increase as
the sample temperature was lowered, allowing ultrafast switching measurements to be performed using the low-temperature-as-grown
GaAs as a photoconductive element. After illumination by 100 femtosecond optical pulses, photogenerated carriers in the sample
have rapidly relaxed, returning the material to its high-resistivity state in less than 1 ps. This indicates that the precipitates
present in post-annealed samples are not required for the fast relaxation of photoexcited carriers in low-temperature-grown
GaAs. Ultrafast switching measurements on a post-annealed version of the GaAs film also resulted in the generation of similar,
0.6 ps full width at half maximum pulses. 相似文献
11.
12.
D.H. Guidry C.P. Morath V.M. Cowan D.A. Cardimona 《Journal of Electronic Materials》2012,41(10):2679-2685
A new infrared detector design, henceforth referred to as a lateral quantum dot infrared photodetector (LQDIP), with the potential for a tunable internal spectral response was investigated. In this design, InAs quantum dots are buried in a GaAs quantum well, which is in turn tunnel-coupled to a second GaAs quantum well. Photoexcited electrons from the quantum dots are expected to tunnel over to the second well, where they are then swept out via a lateral (perpendicular to the growth direction) bias voltage. The lateral photocurrent is in part directed to tunnel into the second quantum well by the depletion field of a narrow pinch-off gate, applied vertically (parallel to the growth direction). Under a proper biasing arrangement, this detector architecture is expected to exhibit the ability to tune to select infrared frequencies as well as operate with reduced dark currents and unity gain in the second well. The LQDIP detector architecture, operating principles and conditions, and preliminary results of I–V, photocurrent, and differential conductance measurements are all discussed. 相似文献
13.
Ren F. Chand N. Chen Y.-K. Pearton S. Tennant D.M. Resnick D.J. 《Electron Device Letters, IEEE》1989,10(12):559-561
High-performance AlGaAs/GaAs selectively doped heterojunction transistors (SDHTs) and 19-stage oscillators fabricated on silicon substrates are discussed. Epitaxial layers of AlGaAs/GaAs were grown by MBE on Si substrates. The mobility of two-dimensional electron gas (2DEG) in the SDHTs was as high as 53000 cm2/V-s at 77 K for a sheet charge density of 10×112 cm-2. For 1-μm-gate-length devices, maximum transconductances of 220 and 364 mS/mm were measured at 300 and 77 K, respectively, for the SDHTs. A minimum propagation delay time of 27 ps/stage at room temperature was obtained for a 19-stage direct-coupled FET logic ring oscillator with a power dissipation of 1.1 mW/stage. The propagation delay time was reduced to 17.6 ps/stage at 77 K. From microwave S-parameter measurements at 300 K, current gain and power gain cutoff frequencies of 15 and 22 GHz, respectively, were measured. These results are comparable to those obtained for SDHT technology on GaAs substrates 相似文献
14.
理论估算并实验验证了在X射线脉冲激发下低温砷化镓的光学折射率调制特性。泵浦-探针实验表明,低温砷化镓中存在的高密度复合缺陷大大减小了载流子寿命,使超热电子的弛豫时间小于110-12 s,载流子的复合时间小于 210-12 s,折射率的扰动时间约为210-12 s。通过理论分析,给出了自由载流子和俄歇效应对该弛豫过程的定量估算,与实验结果吻合较好。该研究表明低温生长砷化镓是一种有效的可用于单次瞬态皮秒时间分辨X射线探测的材料。 相似文献
15.
16.
The temporal response of a GaAs metal-semiconductor-metal (MSM) photodetector with a finger spacing of 0.1 μm is discussed. The intrinsic detector has a minor effect (25% increase) on the full width at half-maximum (FWHM) of the temporal response of the device and its parasitic circuit elements. The analysis indicates that a long time constant due to the decay of holes is solely responsible for this increase. The smallest FWHM for this detector is estimated to be less than 2.5 ps 相似文献
17.
《Electron Devices, IEEE Transactions on》1979,26(5):780-786
A two-dimensional modeling technique is used to simulate GaAs transferred-electron devices operated as a logic gate (the TELD) and as a threshold gate. The simple logic gate has a good transfer characteristic but is shown sensitive to bias variations and operates with monostable output. For an input logic swing of 0.6 V and a fanout of 2, a propagation delay of 26 ps and gain of 1.25 is predicted. A bi-stable threshold gate shows a turn-on time of about 80 ps. An FET-triggered two-terminal transferred-electron device is calculated to have propagation delay of 27 ps with a gain of -1.2. Subsequent similar stages would require a noninverted output obtainable from a capacitive electrode on the TED. However, it is shown that additional anode load resistance is required to obtain a significant positive pulse output from such capacitive electrodes. The bias power requirement is estimated to be similar to the simple TELD gate. 相似文献
18.
Warren A.C. Burroughes J.H. Woodall J.M. McInturff D.T. Hodgson R.T. Melloch M.R. 《Electron Device Letters, IEEE》1991,12(10):527-529
The fabrication of a GaAs detector which operates in the 1.3- to 1.5-μm optical range is reported. The detector is a P-i-N photodiode with an intrinsic layer composed of undoped GaAs which was grown at 225°C and subsequently annealed at 600°C. This growth process has been demonstrated to produce a high density of As precipitates in the low-temperature grown region, which the authors show to exhibit absorption through internal photoemission. The internal Schottky barrier height of the As precipitates is found to be 0.7 eV, leading to reasonable room-temperature responsivity out to around 1.7 μm 相似文献
19.
van de Beek R.C.H. Vaucher C.S. Leenaerts D.M.W. Klumperink E.A.M. Nauta B. 《Solid-State Circuits, IEEE Journal of》2004,39(11):1862-1872
This paper demonstrates a low-jitter clock multiplier unit that generates a 10-GHz output clock from a 2.5-GHz reference clock. An integrated 10-GHz LC oscillator is locked to the input clock, using a simple and fast phase detector circuit that overcomes the speed limitation of a conventional tri-state phase frequency detector due to the lack of an internal feedback loop. A frequency detector guarantees PLL locking without degenerating jitter performance. The clock multiplier is implemented in a standard 0.18-/spl mu/m CMOS process and achieves a jitter generation of 0.22 ps while consuming 100 mW power from a 1.8-V supply. 相似文献
20.
Anderson G.W. Papanicolaou N.A. Ma D.I. Mack I.A.G. Modolo J.A. Kub F.J. Young C.W. Jr. Thompson P.E. Boos J.B. 《Electron Device Letters, IEEE》1988,9(10):550-552
Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- μm detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- μm wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm 相似文献