等离子体化学气相沉积法制备致密性超浸润纳米硅氟薄膜

以含氟丙烯酸酯功能单体和硅烷为原料、无水乙醇为溶剂、氩气为工艺气体,经等离子体化学气相沉积在表面绝缘阻抗(SIR)测试板和无尘布上制得硅氟薄膜.探讨了硅烷种类和用量、含氟单体用量对镀硅氟薄膜试件性能的影响.结果表明,采用γ-甲基丙烯酰氧基丙基三甲氧基硅烷(KH 570)、γ-氨丙基三乙氧基硅烷(KH 550)和乙烯基三...     

微波等离子体化学气相沉积工艺对透明金刚石膜质量的影响

在自制的２４５０ＭＨｚ／５ｋＷ不锈钢谐振空型微波等离子体学气相沉积装置中研究了基片预处理和工艺参数对微波等离子体化学气相沉积金刚石膜质量的影响,研究了提高成核密度和沉积速率的方法,用ＳＥＭ,ＸＲＤ,ＦＴＩＲ,Ｒａｍａｎ和ＡＦＭ分析了金刚石膜的质量,结果表明：用纳米金刚石粉研磨单晶基片,在沉积气压６．０ｋＰａ,ＣＨ４／Ｈ２的体积流量比为０．７５％时,可 出红外透光率达６８％,表面粗糙度为１１４．１０     

等离子体化学气相沉积法合成石英玻璃

用高频等离子体作为热源,采用化学气相沉积法合成了石英玻璃样品.实验分别使用02和空气作为等离子体电离气体和冷却保护气体,改变等离子体电离工作气体种类时,等离子体火焰长度和石英玻璃沉积温度变化较大,而灯具冷却保护气体的改变对等离子火焰长度和石英玻璃沉积温度的影响不大.当等离子体电离气体和灯具保护气体均为O2时,等离子体火焰长度为12cm,石英基体温度为1 300℃,当等离子体电离气体和灯具保护气体均为空气时,等离子体火焰长度可达24cm,石英基体温度升高到l 840℃,可确保气相沉积过程进行,合成的石英玻璃在波长190nm处光透过率达84%,羟基含量3.5×10-6,可达到全光谱透过的要求.     

高频等离子体化学气相沉积法制氮化硅的化学平衡计算

基于Ｇｉｂｂｓ自由能最小原理，开发了热力学通用程序，分析了以Ａｒ为载气、ＳｉＣｌ４和ＮＨ３为原料、在高频等离子体化学气相沉积反应器中制备Ｓｉ３Ｎ４超细粉的化学热力学过程得到了在典型条件下系统的主要组成，分析了温度、反应物浓度对平衡组成的影响通过热力学模拟，发现当ＳｉＣｌ４进料口在前，ＮＨ３进料口在后，且两个进料口均在高频等离子体尾焰处时，经脱ＮＨ４Ｃｌ的产物中氮含量较高，而反应物ＮＨ３与ＳｉＣｌ４的比例以（６～８）：１为好     

常压化学气相沉积法制备二氧化钛薄膜的沉积工艺及薄膜均匀性

利用常压化学气相沉积法在浮法玻璃表面制备了二氧化钛薄膜。研究了水蒸气、氧气含量和衬底温度以及反应器与衬底的距离对薄膜制备过程中沉积速率的影响。结果表明:当水蒸气质量浓度为50mg/L。氧气含量为总气体流量的8%时,薄膜的沉积速率可达30nm/s,随着衬底温度从300℃升到600℃,薄膜的沉积速率从15nm/s增加到30nm/s;然而随着反应器与衬底的距离从2mm增加到12mm,薄膜的沉积速率从30nm/s降到10nm/s,但大面积薄膜层的厚度差从10nm降低到2nm,薄膜比较均匀。     

高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究

以Ar气为载气，SiCl4和NH3为原料，在高频等离子体化学气相沉积反应器中，制备了超细无定形的Si3N4粉未．该粉具有粒度小、粒径窄和分散均匀的特点，氮含量在36％以上．实验中发现，当SiCl4进料口在前，NH3进料口在后，且两个进料口均在高频等离子体尾焰处，经脱NH4Cl的产物中氮含量较高．而反应物NH3也不宜太过量，以NH3：SiCl4=8：1为好．Si3N4的晶型转变在1400“C下处理8h，效果较好     

在线化学气相淀积法镀硅膜玻璃的理论研究

本文论述了多晶薄膜在玻璃基片上淀积的原理及主要影响因素，阐明了膜膜淀积的总速率是由玻璃基片的表面反应速率和反应剂分子扩散到玻璃表面的扩散速率决定的。硅烷浓度，玻璃板运动速率等因素也是重要影响参考。     

等离子体增强化学气相沉积技术制备锗反蛋白石三维光子晶体

采用溶剂蒸发对流自组装法将单分散二氧化硅(SiO2)微球组装形成三维有序胶体晶体模板,以锗烷(GeH4)为先驱体气用等离子增强化学气相沉积法在350℃填充高折射率材料锗.获得了锗反蛋白石光子晶体.通过扫描电镜、X射线衍射仪对锗反蛋白石的形貌、成分、结构进行了表征.结果表明:锗在SiO2微球空隙内填充均匀,得到的锗为多晶态.锗反蛋白石光子晶体为三维有序多孔结构.等离子体增强化学气相沉积的潜在优势在于可实现材料的低温填充,从而以高分子材料为模板进行复型,得到多种结构的三维光子晶体.     

化学气相沉积法制备碳纳米管的研究进展

从催化剂、碳源气体及反应器的选择等方面综述了化学气相沉积法制备碳纳米管的研究进展 ,讨论了碳纳米管的合成机理。指出催化合成碳纳米管的研究难点在于管径的有效调控和大批量生产 ,今后的研究方向应为单层碳纳米管的有效合成     

Low-Temperature Metal-Organic Chemical Vapor Deposition of Silicon Nitride

Amorphous silicon nitride films have been deposited on single-crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si-C, Si-H, and C-H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.     

Modeling of Laser-Induced Chemical Vapor Deposition of Silicon Carbide Rods from Tetramethylsilane

Finite-difference fluid-dynamics modeling has been used to predict deposition rates, fractional amounts of phases, and deposition morphology for the codeposition of silicon carbide and pyrolitic carbon from tetramethylsilane via laser-induced chemical vapor deposition (LCVD). Calculated results agree fairly well with rod deposition experiments. The morphologic features of rods that have been grown using LCVD are examined and explained using the results of the finite-difference calculations.     

Chemical Vapor Deposition of Polymer Thin Films Using Cationic Initiation

Chemical vapor deposition (CVD) is an attractive technique for the fabrication of high‐quality polymer thin films. The scheme used to initiate polymer chain growth is fundamental to controlling polymer thin film chemistry. A new initiation scheme for polymer CVD utilizing cationic initiation with a strong Lewis acid, TiCl₄, in combination with a hydrogen donor, H₂O, is presented. This coinitiation scheme results in polystyrene deposition rates of 139 nm min^?1, relative to just 34 nm min^?1 when TiCl₄ is used alone. Characterization by Fourier transform infrared spectroscopy shows that the polymer structures of polystyrene films prepared by conventional solution‐based techniques and cationic CVD are similar. Synthesis of cross‐linked polymer thin films is also demonstrated by depositing poly(divinylbenzene) and showing its insolubility in a range of solvents. The practical utility of these poly(divinylbenzene) films as corrosion resistant coatings is demonstrated. In 1 n HCl, 200 nm thick films on stainless steel increase the polarization resistance by a factor of 44 relative to bare, untreated stainless steel.     

Chemical Vapor Deposition for Silicon Cladding on Advanced Ceramics

Polycrystalline Si was used to clad several advanced ceramic materials such as SiC, Si₃N₄, sapphire, Al₂O₃, pyrolytic BN, and Si by a chemical vapor deposition (CVD) process. The thickness of Si cladding ranged from 0.025 to 3.0 mm. CVD Si adhered quite well to all the above materials except Al₂O₃, where the Si cladding was highly stressed and cracked or delaminated. A detailed material characterization of Si-clad SiC samples showed that Si adherence to SiC does not depend much on the substrate surface preparation; that the thermal cycling and polishing of the samples do not cause delamination; and that, in four-point bend tests, the Si–SiC bond remains intact, with the failure occurring in the Si.     

Growth Mechanism of Silicon Carbide Films by Chemical Vapor Deposition below 1273

SiC films were prepared from the reaction of Si₂H₆ with C₂H₄ or C₂H₂ at relatively low temperatures ranging from 873 K to 1273 K by low-pressure chemical vapor deposition. The deposition rate profiles determined by gravimetry and the alloy composition (carbon content, x, for Si_1-xC_x) profiles determined by X-ray photoemission spectroscopy in the reactor were mainly investigated. The results revealed that the carbon content, x , was a function of the temperature, ratio of partial pressures of source gases, and source gas species (C₂H₄, C₂H₂). From these results we deduced that SiC formation occurred by two major competing reaction processes: (1) the silicon deposition processes, SiH₂ Si (wall) and Si₂H₆ Si (wall), and (2) the carbon deposition process, C₂H₄+ SiH₂ vinylsilane or C₂H₂+ SiH₂ ethynylsilane.     

Thermodynamic Calculations on the Chemical Vapor Deposition of Silicon Nitride and Silicon from Silane and Chlorinated Silanes

After a discussion of the thermochemical values of the Si–H–Cl–N system which occur in the literature, CVD phase diagrams are presented which include contours of constant deposition efficiency. The temperature range considered is from 800 to 2600 K. A number of chlorinated silanes as well as silane can be used as a silicon source, while ammonia is used as the nitrogen source. The effects of pressure variation and dilution by nitrogen and hydrogen are also included. Some initial calculations concerning silicon diimide are made. The CVD phase diagrams are used to describe several mechanisms occurring during the formation of silicon nitride from the gas phase.     

Fracture Strength of Plate and Tubular Forms of Monolithic Silicon Carbide Produced by Chemical Vapor Deposition

The fracture strength of silicon carbide (SiC) plate deposits produced by chemical vapor deposition (CVD) was determined from room temperature to 1500°C using a standard 4-point flexural test method (ASTM C1161). CVD SiC materials produced by two different manufacturers are shown to have only slightly different flexural strength values, which appear to result from differences in microstructure. Although CVD deposition of SiC results in a textured grain structure, the flexural strength was shown to be independent of the CVD growth direction. The orientation of machining marks was shown to have the most significant influence on flexural strength, as expected. The fracture strength of tubular forms of SiC produced by CVD deposition directly onto a mandrel was comparable to flexural bars machined from a plate deposit. The tubular (O-ring) specimens were much smaller in volume than the flexural bars, and higher strength values are predicted based on Weibull statistical theory for the O-ring specimens. Differences in microstructure between the plate deposits and deposits made on a mandrel result in different flaw distributions and comparable strength values for the flexural bar and O-ring specimens. These results indicate that compression testing of O-rings provides a more accurate strength measurement for tubular product forms of SiC due to more representative flaw distributions.     

Analysis of the Pyrolysis Products of Dimethyldichlorosilane in the Chemical Vapor Deposition of Silicon Carbide in Argon

A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyl-dichlorosilane in argon is presented. Reaction conditions were as follows: 700° to 1100°C, a contact time of ∽1 min, and a pressure of 1 atm (∽0.1 MPa). At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. Hydrogen chloride might also be present, but was not determined. The silicon carbide solid that formed showed the presence of hydrogen and chlorine as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100°C, forming hydrogen, trichlorosilane, and silicon tetrachloride.     

多晶硅化学气相沉积数值模拟的研究进展

介绍了多晶硅气相沉积反应的几何模型和数学模型。回顾了。重点综述了近几年国内外还原炉内SHC13-H系统三维过程数值模拟的研究进展,并对其评述。讨论了化学气相沉积数值模拟的研究现状和存在的问题,展望了今后的发展方向。