锶掺杂二钛酸钡的熔盐法制备及其介电性能

为了获得织构化的二钛酸钡陶瓷,并利用元素替代调控和改善陶瓷介电性能的特点,采用熔盐法,以碳酸钡,二氧化钛和碳酸锶为原料,以氯化钠和氯化钾为熔盐,在840 ℃反应5 h,X射线衍射结果显示,得到的粉体为单相,说明锶离子完全进入了二钛酸钡晶格,成功制备出了摩尔比为1%锶掺杂的二钛酸钡粉体.通过扫描电子显微镜形貌分析显示,制备的二钛酸钡锶单晶颗粒呈棒状,长约2.0 μm,矩形截面宽约为100～200 nm.棒状颗粒所组成的粉体经单轴压力压片、烧结后得到的二钛酸钡锶陶瓷,居里温度约为415 ℃,说明当锶掺杂量为1%（摩尔比）时,相比未掺杂的单晶二钛酸钡的居里温度略有降低.在测量频率为10 kHz～10 MHz的范围内,陶瓷片在成型时压力轴垂直方向上的介电常数峰值约是平行方向上介电常数峰值的3倍,说明陶瓷的介电性能具有明显的各向异性,成功获得了织构化的二钛酸钡锶陶瓷.     

镨对锰掺杂钛酸钡陶瓷结构和介电性能的影响

采用冷压陶瓷技术制备了锰掺杂及镨锰共掺杂钛酸钡陶瓷.1.0%锰在钛酸钡中的掺杂导致形成四方和六方钙钛矿混合结构;镨的进一步掺杂导致六方相消失,形成四方钙钛矿单相结构.同时研究了镨对锰掺杂钛酸钡陶瓷介电性能的影响.     

大型钛酸钡基高介电陶瓷制备和绝缘电阻评价

采用固相反应的冷压陶瓷制备工艺,制备出以钛酸钡为基的双稀土掺杂大型Φ60和小型Φ10陶瓷材料BPTC．通过XRD和介电温谱测试,研究了稀土元素在钛酸钡晶格双位并入、晶体结构和介电性能．采用静电计对稀土掺杂钛酸钡基大型陶瓷材料的体电阻率进行了研究测量,侧面反应出了小型陶瓷片的高绝缘性能．     

Dy2O3掺杂对钛酸锶钡陶瓷结构性能的影响

采用草酸盐沉淀法,以硝酸锶、硝酸钡、钛酸丁酯和草酸为原料,Dy2O3为掺杂剂,制得了Ba0.6Sr0.4TiO3粉体,并于1 250 ℃将其烧结成Ba0.6Sr0.4TiO3系电介质陶瓷.利用扫描电镜、X射线衍射及TH2818自动元件分析仪对Dy2O3 掺杂量为0.2%～2%的Ba0.6Sr0.4TiO3陶瓷的微观结构和介电性能进行研究.结果表明,Dy2O3的掺杂没有影响到BST陶瓷的主晶相钙钛矿结构,且一定量的Dy3+进入到BST晶格中.BST陶瓷的介电损耗随着掺杂量的增加而逐渐减小,介电常数随着掺杂量的增加呈现先增大后减小的趋势,当掺杂量为0.5%时,介电常数最大,为4 474.48.     

掺杂CuO对(Zr_(0.8)Sn_(0.2))TiO_4陶瓷介电性能的影响

采用固相反应法制备陶瓷样品,研究掺杂CuO对(Zr0.8Sn0.2)TiO4的微观结构和介电性能的影响。结果表明:掺杂降低了(Zr0.8Sn0.2)TiO4陶瓷的烧结温度,样品能够在1300℃下烧结成瓷,陶瓷密度和介电常数随着CuO的增加而增加,介电损耗随着掺杂量的增加而减少。XRD结果显示:样品的主晶相均为(Zr0.8Sn0.2)TiO4相,ZnO和CuO的质量分数均为1%,烧结温度1350℃时,介电常数为40.5,损耗为0.0004(1MHz),介电性能最佳。     

掺杂CuO对（Zr0．8 Sn0．2）TiO4陶瓷介电性能的影响

采用固相反应法制备陶瓷样品,研究掺杂CuO对( Zr0．8 Sn0．2) TiO4的微观结构和介电性能的影响。结果表明：掺杂降低了( Zr0．8 Sn0．2) TiO4陶瓷的烧结温度,样品能够在1300℃下烧结成瓷,陶瓷密度和介电常数随着CuO的增加而增加,介电损耗随着掺杂量的增加而减少。 XRD结果显示：样品的主晶相均为( Zr0．8 Sn0．2) TiO4相。ZnO和CuO的质量分数均为1%、烧结温度1350℃时,介电常数为40．5,损耗为0．0004(1MHz),介电性能最佳。     

Dy_2O_3掺杂对钛酸锶钡陶瓷结构性能的影响

采用草酸盐沉淀法,以硝酸锶、硝酸钡、钛酸丁酯和草酸为原料,Dy2O3为掺杂剂,制得了Ba0.6Sr0.4TiO3粉体,并于1250℃将其烧结成Ba0.6Sr0.4TiO3系电介质陶瓷。利用扫描电镜、X射线衍射及TH2818自动元件分析仪对Dy2O3掺杂量为0.2%~2%的Ba0.6Sr0.4TiO3陶瓷的微观结构和介电性能进行研究。结果表明,Dy2O3的掺杂没有影响到BST陶瓷的主晶相钙钛矿结构,且一定量的Dy3+进入到BST晶格中。BST陶瓷的介电损耗随着掺杂量的增加而逐渐减小,介电常数随着掺杂量的增加呈现先增大后减小的趋势,当掺杂量为0.5%时,介电常数最大,为4 474.48。     

钕掺杂钛酸钡陶瓷材料的制备及电阻-温度依存性的研究

讨论了稀土元素钕(Nd)对钛酸钡陶瓷材料的微观结构和介电性能的影响,以BaCO3、Nd2O3和TiO2为原材料采用固相法贮备了掺杂钕的BaCO3、TiO2纳米粉体,并经高温烧结后得到(Ba1-xNdx)Ti1-x/4O3基片,并对其进行测试,研究了钕掺杂对钛酸钡陶瓷电阻-温度依存性.     

Cr_2O_3及Nb_2O_5掺杂CaCu_3Ti_4O_(12)陶瓷结构与介电性能

采用固相法制备了Cr2O3、Nb2O5掺杂的钛酸钙铜基高介电陶瓷,研究了Cr2O3、Nb2O5掺杂对CaCu3Ti4O12(CCTO)陶瓷晶体结构、显微结构及介电性能的影响.结果表明:当掺杂量x在所研究区域质量分数0~0.8%之间时,样品均形成纯钙钛矿固溶体;两种掺杂对钛酸钙铜陶瓷的晶体生长均有抑制作用,Cr2O3掺杂的样品在1100℃致密成瓷,Nb2O5掺杂的样品在1080℃致密成瓷;当Cr2O3掺杂量为质量分数0.4%、Nb2O5掺杂量为质量分数0.4%时,与纯CCTO相比,两种掺杂对陶瓷的介电性能均有明显的改善作用,室温、1kHz下陶瓷的介电损耗分别为0.04、0.17,Cr2O3掺杂钛酸钙铜陶瓷性能要优于Nb2O5掺杂的钛酸钙铜陶瓷.     

A位Y^（3＋）替代α-BZN陶瓷结构及介电性能研究

采用传统的固相反应法制备了（Bi1.5-xYxZn0.5）（Zn0.5Nb1.5）O7（BYZN,0≤x≤0．2mol）陶瓷,借助XRD、SEM和Agilent4284A测试仪,研究了A位替代对OL—BZN结构和介电性能的影响。研究表明：当掺杂量xY^（3＋）〈0．15mol时,样品相结构中没有出现其他杂相,为单一立方焦绿石相;随掺杂离子的进一步增加,样品中出现少量第二相。陶瓷样品的晶粒尺寸和介电性能随着Y^（3＋）掺杂量的增加而呈现有规律的变化;低温介电弛豫峰的峰形逐渐宽化;xY^（3＋）≤0．15mol时,1MHz下弛豫峰峰值温度Tm由-117℃逐渐增加到-108℃。     

Microstructure, crystalline phase and electrical properties of Li0.06（Na0.5K0.5）0.94Nb（1-2x/5）MgxO3 lead-free piezoelectric ceramics

MgO-modified Li0.06(Na0.5K0.5)0.94NbO3(L6NKN) lead-free piezoelectric ceramics were synthesized by normal sintering at a relatively low temperature of 1000°C.The crystalline phase,microstructure,and electrical properties of the ceramics were investigated with a special emphasis on the influence of MgO content.The addition of MgO effectively improves the sinterability of the L6NKN ceramics.X-ray diffraction analysis indicates that the morphotropic phase boundary(MPB) separating orthorhombic and tetragonal ph...     

Effect of Li content on the microstructure and properties of lead-free piezoelectric （K0.5Na0.5）1-xLixNbO3 ceramics prepared by SPS

Lead-free piezoelectric （K0.5sNa0.5）1-xLixNbO3 （x = 0at%-20at%） ceramics were synthesized by spark plasma sintering （SPS） at low temperature and the effects of LiNbO3 addition on its crystal structure and properties were also studied. When the Li content was less than 6at%, a single proveskite phase with the similar structure of （K0.5Na0.5）NbO3 was formed; and a secondary phase with K3Li2Nb5O15 structure was observed in the 6at% 〈 x 〈 20at% compositional range. Furthermore, LiNbO3 existed as the third phase when the Li content was higher than 8at%. The grain sizes increased from 200-500 nm to 5-8 μm when the K3Li2Nb5O15 and LiNbO3 like phases were formed. With increasing Li content, the relative density of the ceramics first decreased from 97% to 93% and then kept constant. The piezoelectric coefficient d33, dielectric constant, and planner electromechanical coupling factor exhibited a decreasing tendency with increasing Li content because of the decrease in density and the formation of the secondary phase such as K3Li2Nb5O15 and LiNbO3. The formation of dense microstructure with a single phase is necessary in improving the properties of the （K0.5Na0.5）1-xLixNbO3 ceramics.     

中温烧结Mg_4Nb_2O_9-CaTiO_3陶瓷相结构的研究

采用传统固态反应方法制备了(1-x)Mg4Nb2O9+xCaTiO3[(1-x)MN-xCT]复合陶瓷。探讨了烧结温度、组分x对Mg4Nb2O9/CaTiO3复合材料相结构的影响。通过XRD和EDS进行物相分析。实验结果表明:V2O5添加能够有效降低Mg4Nb2O9/CaTiO3陶瓷的烧结温度;(1-x)MN-xCT复相的形成主要取决于烧结温度和x的含量。1150℃烧结、0.5≤x≤0.7范围内,形成了Mg4Nb2O9/CaTiO3复相,无新相生成,但元素在不同相之间发生了扩散。     

Synthesis mechanism of Pr doped BaTi4O9 powder by sol-gel process

Pr Doped BaTi4O9 gel was prepared by sol-gel method using Ti(OC4H9)4, Ba(CH3COO)2, CH3COOH and CH3OCH2CH2OH as raw materials. Through analyzing dry gel thermal treated at different temperatures, the possible synthesis mechanism of Pr doped BaTi4O9 powder was discussed. At first, Ti(OC4H9)4 hydrolyzes and three dimensional networks form, in which Ba2 and CH3COO- are mostly in the form of ions; organic solvent is gradually volatilized through calefaction at 700 ℃, then the offspring is turned into BaTi5O11. With the temperature increasing to 850 ℃, BaTi5O11 begins resolving partly and forming BaTi4O9, and at 1000℃ Ba4Ti13O22 forms partly, but BaTi4O9 is the main crystal phase. BaTi5O11 and Ba4Ti13O30 decomposes completely at 1200℃ and forms single-phase BaTi4O9. The infrared (IR) analysis also shows that the absorbing peak of Ti-O bond is not in the characteristic absorption range of Ti-O-Ti (700-900 cm-1), but slightly shifted to the higher end (908 cm-1). It is probably because that doping Pr enters into the crystal lattice and causes the abnormal absorption of Ti-O bond.     

烧结温度对氧化物法制备Ni-Zn铁氧体的介电性能影响

采用氧化物法制备了Ni0.5Zn0.5Fe2 O4铁氧体;样品的相组成成分、微结构和介电性能分别采用X射线衍射仪(XRD)、扫描电镜(SEM)、阻抗分析仪进行表征,讨论了经不同温度预烧和烧结后的样品微结构和介电性能.结果表明:950℃和1 000℃预烧的样品有Fe2 O3第2相产生,随着烧结温度的升高,微晶尺寸和密度逐渐增大;介电常数呈现先减小后增大的趋势,在1 200℃时有最小值;1 300℃下烧结样品的介电损耗角正切有峰值出现,表现出了异常的介电行为.     

Sb掺杂对0.95MgTiO3-0.05CaTiO3陶瓷介电性能的影响

采用固相反应法制备了( Mg0.95-X Ca0.05 SbX) TiO3微波介质陶瓷.研究了Sb掺杂对0.95MgTiO3-0.05 CaTiO3 (95MCT)陶瓷性能的影响.结果表明:Sb掺杂95MCT陶瓷的主晶相为MgTiO3和CaTiO3两相,有中间相MgTi2O5的产生;Sb掺杂能有效的降低95 MCT陶瓷...     

Dielectric tunable properties of BaTi_4O_9-doped Ba_(0.6)Sr_(0.4)TiO_3 microwave composite ceramics

BaTi4O9-doped Ba0.6Sr0.4TiO3 (BST) composite ceramics were prepared by the conventional solid-state reaction and their structure, dielectric nonlinear characteristics and microwave dielectric properties were investigated. The secondary phase of the orthorhombic structure Ba4Ti13O30 is formed among BST composite ceramics with the increase of BaTi4O9. At the same time, a duplex or bimodal grains size distribution shows fine grains in a coarse grain matrix. The degree of frequency dispersion of dielectric permittivity below Tm is increased initially and then decreased with respect to BaTi4O9. As the BaTi4O9 content increases, the tunability of composite ceramics decreases, while the Q value increases. Inter-estingly, 70 wt% BaTi4O9-doped BST has a tunability ~4.0% (under 30 kV/cm biasing) versus a permit- tivity ~68 and quality factor ~134.1 (at ~3.2 GHz).     

Microstructure and dielectric properties of BaTi4O9(f)/0.64 BaTi4O9+0.36 BaPr2Ti4O12 composites

The microstructure, dielectric properties and chemical state of Ti element on BaTi4O9 (f)/(0. 64 BaTi4O9-0. 36BaPr2Ti4O12 ) composites sample surface were characterized by X-ray diffraction (XRD) ,Transmission electron microscopy (TEM), LCR meter method and X-ray photoelectron spectroscopy (XPS).The results show that the system is composed of BaTi4O9 and BaPr2Ti4O12 two phases. Pr ions are distributed inthe BaTi4O9 grains and the segregation of Pr ions was observed on the grain boundaries of BaTi4O9/BaTi4O9.The content of Ti3 + and Ti2+ decrease in the BPT system composites due to the addition of BaTi4O9 fibers,which improved the dielectric properties of the system. BPT10 sample with 10 % BaTi4O9 fibers, has the bestdielectric properties in the system, its εr =64,tan δ = 1×10-4(at 1 MHz) , and it may be a potential candi-date for microwave dielectric ceramics.     

稀土Nd掺杂对Sr（Fe0.5Nb0.5）O3基介质陶瓷巨介电性能的影响

铁铌酸锶是一种重要的介质材料,具有复合钙钛矿结构,同其他介质材料相比,具有相对高的介电常数的优点,在高储能等领域有重要的应用潜力,是一种用途广泛的功能陶瓷材料．实验以Sr（Fe0.5Nb0.5）O3基陶瓷为研究对象,研究了稀土Nd掺杂对该系陶瓷巨介电性能的影响．结果表明：随着Nd抖掺杂量的增加,陶瓷样品的介电常数逐渐变大;随着温度的上升,陶瓷体系的介电常数也逐渐增大;Nd抖含量x≤0．10时,陶瓷样品有着良好的频率稳定性,x=0．10的陶瓷样品在100kHZ下有着良好的温度稳定性．     

（0.82-x）Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3（x=0.01-0.07）无铅压电陶瓷的制备及其电学性能的研究

采用传统的固相烧结法于1120℃烧结2 h得到（0.82-x）Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3（x=0.01-0.07）无铅压电陶瓷,并对该体系陶瓷的微观结构和电学性能进行了研究。结果表明,BiFeO3的引入量x为0.01-0.07时,样品均为具有MPB准同型相界（三方相和四方相共存）的钙钛矿结构。BiFeO3的引入使陶瓷的晶粒度略有增加;当x=0.03时,样品达到最大致密度。为97.7%;陶瓷的压电常数d33随BiFeO3的引入而降低。陶瓷的相对介电常数εr和居里温度随BiFeO3的引入而明显增大,在x=0.03时达到最大值。