T4快速以太网HUB数据转发器设计及FPGA实现

用VHDL语言设计了100BASE-T4快速以太网HUB中数据转发器电路；分析了基于CSMA／CD协议的T4快速以太网HUB物理子层数据编码和传输机制；硬件结构包括端口控制电路、仲裁电路、时钟多路选择器电路、FIFO电路、核心控制电路、标志生成输出多路选择器电路；用MAX＋PLUSⅡ软件进行了仿真调试和器件下载测试，结果表明该电路系统实现了数据转发目的并且满足CSMA／CD物理子层协议的要求。     

基于VHDL的键盘扫描及显示电路设计

在许多家电和工业的控制电路中,为了调试和进行系统设置都具有键盘和显示电路。本文详细介绍了如何用VHDL语言开发键盘扫描和显示电路,大大简化了对工控电路的设计并且提高系统的可靠性。     

双速自适应以太网MAC设计及FPGA验证

嵌入式以太网有着广泛的应用,是目前嵌入式系统研究的一个重要领域。设计了嵌入式以太网的媒体访问控制器（MAC）。简单介绍了以太网MAC子层协议;用Verilog-HDL设计了10/100Mb/s自适应以太网控制器,其中包括片上总线总线口、发送模块、接收模块和流量控制模块等几部分;建立了相关测试向量,在ModelSimPLUS6.4SE软件中进行了仿真和调试,并成功用ALTERA的FPGA进行了验证;逻辑仿真和物理板级验证结果都表明该设计实现了10/100Mb/s以太网通信的相关功能。     

基于EDA的交通信号灯电路的设计与仿真

为了更好地实现交通畅通,不断优化交通信号灯的智能化管理。通过采用EDA技术对交通信号灯控制电路进行改进,应用VHDL语言实现电路的设计和仿真,消除了传统交通信号灯控制电路的弊端,使交通信号灯控制电路的性能更稳定,调试和维护更便捷。     

数据采集控制时序的VHDL/CPLD设计及应用

用VHDL(甚高速集成电路硬件描述语言)有限状态机设计了数据采集时序的控制电路。采用AD590温度传感器作为摄温元件搭建外围电路构成数字式气温计,包括时序产生、码制转换、七段LED(发光二极管)动态扫描显示驱动等电路;给出了主要源程序片段;用MAX PLUSⅡ软件进行了仿真调试,用CPLD(复杂可编程逻辑器件)进行了下载测试,结果表明实现了电路功能,系统运行正常。     

基于PLD与VHDL的多路输入多路输出数据选择器的设计

利用PLD和VHDL语言进行硬件设计已经成为目前的趋势。多路输入多路输出数据选择器是网络通信中一种常用电路,传统方法的电路较为复杂,扩展性差。文中介绍了一种基于PLD和VHDL语言的多路输入多路输出数据选择器的实现方法。结果表明,该方法一方面可以缩小器件的体积,提高数据选择器可扩展性,更加灵活地进行系统设计;另一方面,可以忽略内部的硬件结构,简化设计流程,提高系统的开发效率。     

基于HDL的PAL制数字视频图像采集控制器设计

介绍了PAL制电视信号的组成和数字视频图像采集的过程：用Verilog—HDL设计了PAL制数字视频图像采集的控制电路；该控制器为DSP进行实时数字图像处理准备好RGB数据，其中包括数据采集控制电路、存储器接口、总线切换电路和DSP接口等电路：在ModelSimPLUS6．0SE软件中进行了仿真和调试，结果表明实现了PAL制数字视频图像采集的相关功能。     

基于FPGA的万兆以太网接口的设计与实现

介绍了IEEE802.3ae标准中万兆以太网物理层及媒质接入控制子层的相关协议.以10GBASE-R应用物理环境为例,阐述了万兆以太网接口各个单元模块的功能和设计实现方法.FPGA仿真结果表明,该万兆以太网接口可以实现以太网之间的万兆接入,对以太网的应用空间和性能提升有着重大的意义.     

基于0􀀂18 􀀁m CMOS 工艺的千兆以太网数据判决电路芯片

介绍了用TSMC 0．18um CMOS工艺设计的千兆以太网数据判决芯片的模块及单元电路的结构，给出版图，后仿真及测试结果。该芯片采用CMOS互补逻辑的D触发器结构，功耗小于25mW，最高工作速率大于3．125Gbps，可直接用于千兆以太网物理媒介配属层的时钟数据恢复电路中。     

基于ARM的以太网接口电路设计

阐述了基于ARM处理器LPC2294的嵌入式系统的以太网接口电路的设计,针对当前嵌入式研究领域的技术热点,实现了以太网功能在嵌入式系统上的开发与应用.详细介绍了ARM处理器的硬件设计,LPC2294与以太网控制器RTL8019AS的接口电路设计和以太网传输层的UDP协议、TCP/IP协议的软件设计流程,以及系统的通信调试过程.ARM处理器与RTL8019AS通过外部数据总线连接,具有非常好的实时性和可靠性,很好地实现了嵌入式系统的以太网功能.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.