Cu层和Mo层对NiFe多层膜巨磁电阻（GMR）的影响

采用磁控溅射方法制备了ＮｉＦｅ／Ｃｕ和ＮｉＦｅ／Ｍｏ两个系列的多层膜，进行了结构，磁性和磁电阻测量，并对部分ＮｉＦｅ／Ｃｕ多层膜样品作了电镜分析，对于ＮｉＦｅ／Ｃｕ多层膜，在室温下的测量到巨磁电阻随Ｃｕ层厚度振荡的第一，二三峰。在ＮｉＦｅ／Ｍｏ多层膜样品中未发现巨磁电阻效应，讨论了非磁性 多层膜的磁性，界面结构和巨磁电阻效应。     

NiFe/Ag多层膜在低场下的巨磁电阻行为

用磁控溅射法制备了NiFe/Ag多层膜 ,并从实用角度对NiFe/Ag多层膜的低场巨磁电阻效应作了研究。分析了该膜系列产生低场巨磁电阻效应的机理 ,并进行了实验研究 ,最终获得在低场 (小于 79 6× 2 5 0A/m)常温下有高达 5 0 %巨磁电阻效应的材料     

加工工艺对Cu-Co合金GMR性能的影响

利用金相和电子显微镜对熔体快淬及熔体快淬后不同时效条件下Cu-Co合金的微观组织进行的分析表明,熔体快淬过程中在Cu80Co20合金的组织内出现了富Co相,Cu75Co25合金则产生了液相分解。对于含Co10%-30%(质量分数）的熔体快淬Cu-Co合金,时效过程中形成的球状富Co沉淀相不仅出现在晶界两侧,也出现在晶粒内部。时效工艺对熔体快淬Cu-Co合金GMR性能的影响研究表明,时效温度的提高和时效时间的延长,巨磁电阻（GMR）随磁场强度的增加而增加的速率提高,使低磁场下的MR增加。研究发现,当时效温度一定时,在一定的时效时间范围内,出现MR的极小值。时效进行到一定程度时,熔体快淬并人工时效的Cu-Co合金可在1．0T外磁场强度下出现磁化饱和。     

铁磁层/导电层/铁磁层多层膜中巨磁阻抗效应理论*

采用经典电磁理论,对铁磁层／导电层／铁磁层（M／C／M）多层膜中出现的巨磁阻抗效应进行了理论分析。对于单轴横向磁各向异性多层膜,理论计算结果表明：高频阻抗在某一外加磁场（近似等于等效各向异性场）下出现最大值,铁磁层和导电层电阻率相关较大的多层膜中将出现较强的巨磁阻抗效应。多层膜在1MHz附近即可出现远大于单层膜的阻抗变化比。多层膜理论计算与实验结果能够较好地符合。     

巨磁电阻多层结构——从多层膜到多层纳米线

综述了巨磁电阻多层膜（包括连续多层膜,不连续多层膜,颗粒膜,非匀相合金膜及层状与粒状混合型多层膜）研究的一些结论,着重评述了巨磁电阻多层纳米线的研究进展,包括其制备,表征,传输性能的测定方法,电流垂直于膜面的巨磁电阻（CPP－GMR）,及如何利用多层纳米线的CPP－GMR测定材料的自旋扩散长度和自旋散射不对称因子等材料常数。简要介绍了开发前景。     

硬磁/软磁交换弹簧多层膜的研究进展

交换弹簧现象在近几年是国际、国内的研究热点,取得了很大的进展,其中硬磁/软磁交换弹簧多层膜是很有价值的磁性材料.详细叙述了硬磁/软磁交换弹簧多层膜的理论和实验进展,着重讨论了硬磁/软磁交换弹簧多层膜的构造和原理,以及硬磁/软磁交换弹簧多层膜的用途,如巨磁致伸缩、永磁体、磁电阻等.     

FeSiB／Cu／FeSiB多层膜巨磁阻抗效应研究

用磁控溅射法在玻璃基片上制备了FeSiB/Cu/FeSiB多层膜,在100kHz-40MHz范围内研究了FeSiB/Cu/FeSiB多层膜中的巨磁阻抗效应特性。当磁场强度Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。在频率为3.2MHz时,在磁场强度Ha=2400A/m时巨磁阻抗变化率达到最大值13．50％;在磁场强度Ha=9600A/m时,巨磁阻抗变化率为－9．20％。巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关。另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率为3．2MHz,磁场强度Ha=9600A/m时,巨磁阻抗变化率可达－12．50％。     

不同结构多层膜中巨磁阻抗效应的研究

研究了封闭式和开放式FeSiB/Cu/FeSiB多层膜以及Cu/FeSiB/Cu多层膜中的巨磁阻抗效应。实验结果表明：多层膜的不同结构对巨磁阻抗效应影响很大。改变外加磁场,封闭式FeSiB/Cu/FeSiB多层膜中阻抗变化最大,开放式FeSiB/Cu/FeSiB多层膜次之,而Cu/FeSiB/Cu多层膜中阻抗几乎不变。三组多层膜中不同的阻抗特征可用多层膜的具体结构解释：在封闭式多层膜内,磁路形成密封结构,使泄漏到多层膜外面空间的磁通大大减少;在Cu/FeSiB/Cu多层膜中,上下两铜层在铁磁薄膜内产生的总磁场近似为零,外加磁场的改变不能引起其阻抗发生变化。对于封闭式FeSiB/Cu/FeSiB多层膜,在100kHz到1MHz时就能够出现较大的阻抗变化比值,最大阻抗变化比值出现在3MHz。开放式FeSiB/Cu/FeSiB多层膜阻抗特性与封闭式类似,但比例只是封闭式多层膜的1／3。     

Evaluation of stress loaded steel samples using GMR magnetic field sensor

The purpose of this paper is to present the results of stress damage observation using a giant magnetoresistive sensor and a high performance measuring system. Selected digital signal processing algorithms were applied in order to enhance the obtained signals and extract parameters suitable for quantitative stress evaluation. The experimental verification of the developed technique is done and the selected results are presented.     

Molecular film technology for biosensors

Two different molecular film technologies have been developed for fabricating biosensors. Firstly, bovine serum albumin spread on the air-water interface was cross-linked and transferred onto the glass surface, on which various molecular assemblies were formed by the bioaffinity technique. Secondly, a protein monolayer was adsorbed from an aqueous phase on the potential-controlled electrode surface, which was followed by electrochemical polymerization and deposition of pyrrole between the protein molecules to make the adsorbed protein film conductive.

A unique optical biosensor for taste has been fabricated by depositing fluorophore-containing Langmuir-Blodgett (LB) films on the glass surface. Each layer of the LB films exhibits its characteristic fluorescence peak which is quenched or enhanced in contact with taste substances. The sensor consisted of three different LB films containing pyrene and anthracene and deposited on a glass plate. Novel performance was demonstrated with the response of the sensor to glutamate and nucleotide umami substances.     

基于NiFeCo/Cu多层膜巨磁电阻效应的磁微球检测

分析了应用于磁性生物检测的GMR传感器的工作原理.直流磁控溅射法制备了Ni65Fe15CO20/Cu多层膜,研究了室温下多层膜的GMR效应对缓冲层(NiFeCo)厚度、间隔层(Cu)厚度及铁磁层(NiFeCo)厚度等参数的依赖关系,得到了GMR值达8.8%的多层膜样品:缓冲层(NiFeCo)5nm,间隔层(Cu)2.4nm,铁磁层(NiFeCo)1.6nm,且饱和场低、磁滞小、灵敏度较高,符合磁性生物检测技术的要求.制备了基于优化参数NiFeCo/Cu多层膜的GMR传感器,对器件的性能进行了测试,结果表明所制备的GMR传感器能够检测磁微球.     

Ni的合金化对Cu-Co合金磁学性能和GMR效应的影响

磁学性能分析表明，Cu85Co15熔体快淬过程中即可通过液相分解形成大块铁磁性富Co相，也可通过固相分解形成纳米超顺磁相，而Cu80Co15Ni5合金则主要通过固相分解形成纳米超顺磁相。Ni对Cu—Co合金液相分解的抑制和增加固容体过饱和度从而促进过饱和固容体分解的作用使Cu80co15Ni5合金相对于无Ni的Cu85Co15合金时效后纳米超顺磁相尺寸减小，体积密度明显增高。Ni合金化还使Cu—Co合金富Co磁性相的尺寸一致性得到很大改善，减小了磁性相间的交互作用。这些因素都有助于增大GMR效应。     

Sense signal and word noise in a thin magnetic film memory with easy axis bias fields

In a thin magnetic film memory, an easy axis field due to the conducting surrounding of the cell is to be taken into account in order to evaluate the sense signal corresponding to a word pulse in the hard axis. For a simplified switching model, diagrams demonstrate the influence of the easy axis field on the sense pulse amplitude and width and the signal-to-word-noise ratios. Optimum word pulses yielding maximum signal-to-noise ratios are given. Finally, the calculated and measured sense pulse amplitudes are compared.     

Multilayer processing for magnetic film memory devices

Planar processing techniques for producing coupled film storage devices are presented. The discussion centers around a process sequence for a coupled easy-axis structure built on a metal substrate, largely by vacuum deposition techniques. The process results in packing density of about 8000 bits/in². Included is a test of one such element displaying useful memory device characteristics under conditions of a worst case pulse test program.     

Helical anisotropic magnetic film

The magnetic coupling between the magnetization in two nonmagnetostrictive Ni-Fe layers separated by a SiO layer has been investigated by means of a transverse susceptibility measurement. The main results are that 1) the coupling energy Ec per Unit area of the multilayered film has a form ofE_{c}= -A cos (phi_{1}-phi_{2}), wherephi_{1}-phi_{2}is the angle between the magnetization vectors in the two Ni-Fe layers, and 2) the dependence of the coupling constant on the thickness b of the intermediate SiO layer can be interpreted quantitatively by the combination of the coupling energy due to Néel's topography model and that due to the magnetostatic interaction between the magnetic free poles appearing at the edges of the two Ni-Fe layers. The former coupling energy is given byE_{c1} = -frac{p}{2sqrt{2}}omega^{2}M^{2} exp(-sqrt{2}pb) cos (phi_{1}-phi_{2})wherep=2pi/LandLandware the wavelength and the amplitude of the undulation of the interface between Ni-Fe and SiO layers, respectively. The latter is given byE_{c2} = frac{2M^{2}D^{2}}{R} ln (frac{R}{D+b}) cos (phi_{1}-phi_{2})whereDis the thickness of each Ni-Fe layer, andRis the radius of the film.     

Integrated transmission lines for magnetic thin film memories

The pulse transmission properties of integrated strip lines are examined for a structure that has been proposed for application in a large capacity, high-speed magnetic film memory. The lines are vacuum-deposited onto an insulated ground plane and are characterized by low impedances. Previous analyses, such as those given by Eastman and Chang, McQuillan, and Harloff, examine the effects of skin-depth losses in lines which are assumed to be perfectly terminated. In general, this type of analysis is insufficient for lines which are lossy and which have resistive terminations. The present analysis considers skin-effect losses in the ground plane and in the strip conductors separately and also includes the effect of reflections from resistive terminations. The influence of heavy magnetic loading of the transmission line due to the presence of magnetic film devices is examined in detail. A computer program, similar to the one described by Bertin, has been used to obtain numerical results for the pulse response of the transmission lines. Data are presented which demonstrate the influence of line geometry and material properties.     

Recent development of thin film materials for magnetic heads

Recent developments of soft magnetic film materials in the past decade are reviewed. Approximately 20 kinds of alloy systems with high saturation induction of more than 10 kG have been reported in the last decade, although there were only three conventional head materials: Mn-Zn ferrite, Permalloy, and Sendust. A particular focus of the review is nanocrystalline films and multilayer films. Also reviewed are improvements in single-layer homogeneous films of Fe, Fe-Si, Sendust, and Fe/sub 16/N/sub 2/. Almost all the materials reported are Fe-based alloys, and some alloys are nitrogen related: iron-nitride compounds or nitrogen-containing alpha -Fe or Sendust.<>