Enhancement of room-temperature magnetoresistance in La<Subscript>0.6</Subscript>Dy<Subscript>0.1</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

The samples of La0.6Dy0.1Sr0.3MnO3/(Ag2O)x/2(x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.25, and 0.30) were prepared by using the solid-state reaction method.Their magnetic property, transport behavior, transport mechanism and magnetoresistance effect were studied through the measurements of magnetization-temperature(M-T) curves, ρ-T curves and the fitting of ρ-T curves.The results indicated that Ag could take part in the reaction when the doping amount is small.However, when the doping amount is compar...     

Magnetoresistive properties of Ni-doped La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> manganites

La_0.7Sr_0.3Mn_1?x Ni _x O₃ (x = 0, 0.025, 0.050 and 0.075) ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni²⁺ leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni²⁺ doping increases the electrical resistivity, decreases the semiconductor–metal transition temperature (T _ms) and relatively enhances the room temperature magnetoresistance (MR), especially in x = 0.025 and around T _ms. With respect to conduction mechanism, the small polaron hopping (SPH) and the variable range hopping (VRH) models were used to examine conduction in the semiconducting region.     

Transport phenomena in the La<Subscript>0.72</Subscript>Ba<Subscript>0.28</Subscript>MnO<Subscript>3</Subscript> single crystal

Results of an experimental study of the temperature dependences of the magnetization M, electrical resistivity, magnetoresistance, thermo-and magnetothermo-emf, and Hall effect of the La_0.72Ba_0.28MnO₃ single crystal are presented. An analysis of the temperature dependences of kinetic properties shows that, at low temperatures, electrons are principal charge carriers in La_0.72Ba_0.28MnO₃ and the metallic conduction takes place. As the temperature increases to T ≈ 145 K, the sign of the ordinary Hall coefficient reverses; this indicates the change in the type of the majority charge carriers. Within a certain temperature range which lies substantially below the Curie temperature (T _C ), a metal-semiconductor transition occurs. Near the Curie temperature and within the paramagnetic range, the manganite under study is a semiconductor; the conduction is mainly effected by holes activated to the mobility edge. The critical behavior of the resistance and magnetoresistance is discussed.     

Magnetoresistance of the La<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> single crystal

The dependence of the resistance ρ of the La_0.7Ca_0.3MnO₃ single crystal on the temperature (in a range of 77 < T < 410 K) and magnetic field H is studied. The dependence of the magnetoresistance Δρ/ρ of the ferromagnetic phase on the field is shown to be determined by the competition of two mechanisms. In low magnetic fields, the magnetoresistance is positive Δρ/ρ > 0 and is determined by changes in the resistance with changing magnetization orientation with respect to the crystallographic axes; in high magnetic fields, the magnetoresistance is negative Δρ/ρ < 0, since it is the suppression of spin fluctuations in the magnetic field that plays the principal role. The phase transition from the ferromagnetic to paramagnetic state is a first-order transition close to the second-order one. In the transition range, the magnetoresistance is determined by the resistivity in the zero field ρ(T) and by the shift of the transition temperature T _C(H) in the magnetic field. In the paramagnetic state, the resistivity ρ(T) has an activation character; similarly to the magnetoresistance of other lanthanum manganites, the magnetoresistance of this single crystal is controlled by a change in the activation energy in the magnetic field.     

Tunneling magnetoresistance in sintered Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> samples diluted with Fe and α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>

Electric transport and magnetoresistance characteristics were investigated for Fe₃O₄-x Fe(x=0, 10, 20 wt.%) samples and Fe₃O₄-α-Fe₂O₃ samples sintered at 500°C. For composition dependence of Fe₃O₄-x Fe samples, the largest room temperature MR, 3.3% at 10 kOe, was obtained from a Fe₃O₄-10 Fe sample. For the surface heat treatment dependence of Fe₃O₄ powders, the largest room temperature MR, 4% at 10 kOe, was obtained from a Fe₃O₄-α-Fe₂O₃ sample sintered with Fe₃O₄ powders heated at 200°C in air. It was found that these enhanced MR ratios always appear together with the appropriate excess resistance which is regarded as the tunneling barrier. These enhanced MR ratios of Fe₃O₄-10 Fe and Fe₃O₄-α-Fe₂O₃ samples can be explained by the increased interparticle contact sites and the appropriate thickness of α-Fe₂O₃, respectively.     

Effect of Ga addition on the magnetic properties and microstructure of nanocrystalline Nd_（12.3）Fe_（81.7）B_（6.0） ribbons

Nd 12.3 Fe 81.7 x Ga x B 6.0 (x = 0-1.8) ribbons were prepared by melt spinning at 22 m/s and subsequent annealing treatment. The influences of Ga addition and annealing conditions on the magnetic properties and microstructure of the nanocrystalline alloys were systematically investigated. After being annealed at 620℃ for 20 min, the J r and H ci increased from 0.85 T and 582.6 kA/m for Ga-free sample to 0.97 T and 734.6 kA/m for the x = 0.9 sample, respectively. The (BH) max for the x = 0.9 sample increased by about 40% from 96.3 to 135.5 kJ/m 3 compared with that of the Ga-free one. The significant improvement of magnetic properties originated from the refinement of grains in the samples by introducing Ga, which led to a stronger exchange coupling between the neighboring grains in comparison with that in Ga-free samples. The microstructure and magnetic properties of the samples depended strongly on annealing parameters, while the sensitivity of micro-structure to annealing conditions could be significantly suppressed by the addition of Ga element.     

Effect of yttrium doping on the resistivity and magnetoresistance of La<Subscript>0.80</Subscript>Sr<Subscript>0.20</Subscript>MnO<Subscript>3</Subscript>

The temperature and magnetic field dependence of resistivity of crystals of nominal compositions of La_0.75Y_0.05Sr_0.20MnO₃ grown by floating zone method at different growth rates are studied. The yttrium doping is found to result in the decrease of Curie temperature, suppression of the Pnma-R $ \bar 3 $ \bar 3 c structural transition, increase of resistivity and magnetoresistance. It is shown that the physical properties of the manganites studied are determined by not only the nominal composition but also the growth rate.     

Studies on La0.67Ca0.33MnO3-SrTiO3 composites using two-phase model

In this study we report the structural, electrical and magnetic properties of (1 − x)La_0.67Ca_0.33MnO₃ (LCMO)-(x)SrTiO₃(STO) composites. For this series we have observed a minute change in ferromagnetic (FM)-paramagnetic (PM) transition temperature with STO addition in LCMO matrix; however a reasonable change is observed in metal-insulator transition temperature, along with the occurrence of percolation threshold for x = 0.30 sample. Overall pattern for temperature dependence of resistivity for this series has been best-fitted using the formula 1/ρ = (1 − f)/ρ_PM + (f/ρ_FM), whereρ_PM and ρ_FM are the resistivities of the PM and FM contents in the sample and f is the volume fraction of FM phase in the sample. Investigations on magnetoresistance (MR) using magnetic field up to 3 T show enhancement of extrinsic MR in the composite samples which can be viewed in the light of spin polarized tunneling.     

Transport properties on Sn-filled and Te-doped CoSb<Subscript>3</Subscript> skutterudites

Sn-filled and Te-doped CoSb₃ skutterudites (Sn_xCo₈Sb_23.25Te_0.75) were synthesized by the encapsulated induction melting process. Single δ-phase was successfully obtained by subsequent heat treatment at 823 K for 6 days. Structural characterizations were carried out through X-ray diffraction studies. Transport properties such as the Seebeck coefficient, electrical resistivity, thermal conductivity, carrier concentration and mobility were measured and analyzed. The unfilled Co₈Sb_23.25Te_0.75 sample showed n-type conductivity from 300 K to 700K. However, the Sn-filled Sn_xCo₈Sb_23.25Te_0.75 showed n-type conductivity for z=0.25 and 0.5, and p-type conductivity for z=1.0 and 1.5 from 300 K to 700 K. Thermal conductivity was reduced by the impurity-phonon scattering. The dimensionless figure of merit (ZT) was remarkably improved over that of untreated CoSb₃. However, the ZT value decreased when filling with z≥1.0 because the conductivity type was changed from n-type to p-type, thereby allowing bipolar conduction. The details are discussed in terms of the two-band model and the bipolar thermoelectric effect.     

Electrical resistivity and thermal electromotive force of Ni<Subscript>75</Subscript>V<Subscript>25</Subscript>, Ni<Subscript>72</Subscript>V<Subscript>28</Subscript>, and Ni<Subscript>67</Subscript>V<Subscript>33</Subscript> alloys at high temperatures

The temperature dependences of the electrical resistivity and thermal electromotive force (thermal e.m.f.) of the Ni–25 at % V, Ni–28 at % V, and Ni–33 at % V alloys in a temperature range of 300–1600 K have been reported; the dependences have been measured during slow heating and cooling of quenched and annealed samples. It has been shown that, near the order–disorder phase-transformation temperature, the temperature dependences of the electrical resistivity of the Ni₇₅V₂₅ and Ni₆₇V₃₃ alloys demonstrate a kink (second-order phase transition) and a jump (first-order phase transition), respectively. The behavior of the experimental dependences is discussed in terms of the band Mott s–d scattering model.     

Electrochemical properties of carbon-coated LiFePO<Subscript>4</Subscript> and LiFe<Subscript>0.98</Subscript>Mn<Subscript>0.02</Subscript>PO<Subscript>4</Subscript> cathode materials synthesized by solid-state reaction

Olivine structured LiFePO4/C (lithium iron phosphate) and Mn2+-doped LiFe0. 98Mn0. 024/C powders were synthesized by the solid-state reaction. The effects of manganese partial substitution and different carbon content coating on the surface of LiFePO4 were considered. The structures and electrochemical properties of the samples were measured by X-ray diffraction (XRD), cyclic voltammetry (CV), charge/discharge tests at different current densities, and electrochemical impedance spectroscopy (EIS). The electrochemical properties of LiFePO4 cathodes with x wt. ％ carbon coating (x=3, 7, 11, 15) at γ=0. 2C, 2C (1C=170 mAh·g-1) between 2. 5 and 4. 3 V were investigated. The measured results mean that the LiFePO4 with 7 wt. ％ carbon coating shows the best rate performance. The discharge capacity of LiFe0. 98Mn0. 02PO4/C composite is found to be 165 mAh·g 1 at a discharge rate, γ=0. 2C, and 105 mAh·g-1 at γ=2C, respectively. After 10cycles, the discharge capacity has rarely fallen, while that of the pristine LiFePO4/C cathode is 150 mAh·g-1 and 98 mAh·g-1 at γ=0. 2 and 2C, respectively. Compared to the discharge capacities of both electrodes above, the evident improvement of the electrochemical performance is observed, which is ascribed to the enhancement of the electronic conductivity and diffusion kinetics by carbon coating and Mn2+-substitution.     

Synthesis and measurement of structural and magnetic properties of K-doped LaCoO<Subscript>3</Subscript> perovskite materials

Polycrystalline La_1−x K _x CoO₃ (0 ≤ x ≤ 0.2) rare earth cobaltates have been synthesized by a solution combustion method using glycine as a fuel. The synthesized ceramic materials were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and magnetic measurements and studied for physical properties, such as photocatalytic activity. FTIR measurements in conjunction with XRD showed that phases beyond 10% K doping are accompanied by small amounts of impurities. Chemical titrations show the presence of Co⁴⁺ and account for the Co³⁺-Co⁴⁺ mixed-valency of the system. The parent LaCoO₃ shows spin-glass transition at low temperatures, whereas doped samples show transition from spin-glass behavior to paramagnetic ordering on progressive doping of K. “Mixed-conductor” nature of these ceramics positions them as viable candidates for solid oxide fuel cell (SOFC) applications.     

Electrical conductivity of composite DLC-C<Subscript>2</Subscript>N films

Electrical conductivity of films of CN _x vacuum condensates which are considered as composites consisting of domains of diamond-like carbon and C₂N has been studied. It is supposed that the conductivity of such a medium is determined exclusively by interphase boundaries which separate unlike domains from one another. The dependence of the electrical resistivity on the average content of nitrogen in the films in terms of such a model satisfactorily agrees with literature experimental results.     

Electronic transport properties of Ni-doped CoSb<Subscript>3</Subscript> prepared by encapsulated induction melting

Ni-doped CoSb₃ skutterudites were prepared by encapsulated induction melting and their thermoelectric and electronic transport properties were investigated. The negative signs of Seebeck and Hal coefficients for all Ni-doped specimens revealed that Ni atoms successfully acted as n-type dopants by substituting Co atoms. The carrier concentration increased as the Ni doping content increased, and the Ni dopants could generate excess electrons. However, the carrier mobility decreased as the doping content increased, which indicates that the electron mean free path was reduced by the impurity scattering. The Seebeck coefficient and the electrical resistivity decreased as the carrier concentration increased, as the increase in carrier concentration by doping overcame the decrease in the carrier mobility by impurity scattering. The Seebeck coefficient showed a negative value at all temperatures examined and increased as the temperature increased. The temperature dependence of electrical resistivity suggested that Co_1−xNi_xSb₃ is a highly degenerate semiconducting material. Thermal conductivity was considerably reduced by Ni doping, and the lattice contribution was dominant in the Ni-doped CoSb₃.     

Thermoelectric properties of n-type Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> compounds prepared by spark plasma sintering

In this study, the thermoelectric properties of 0.1 wt.% Cdl₂-doped n-type Bi₂Te_2.7Sb_0.3 compounds, fabrieated by SPS in a temperature range of 250°C to 350°C, were characterized. The density of the compounds was increased to approximately 100% of the theoretical density by carrying out consolidation at 350°C. The Seebeck coefficient, thermal conductivity, and electrical resistivity were dependent on a hydrogen reduction process and the sintering temperature. The Seebeck coefficient and the electrical resistivity increased with the reduction process. Also, electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that carrier density and mobility vary according to the reduction process and sintering temperature. The highest figure of merit, 1.93×10⁻³ K⁻¹, was obtained for the compound consolidated at 350°C for 2 min.     

Thermoelectric properties of In<Subscript>z</Subscript>Co<Subscript>4</Subscript>Sb<Subscript>12</Subscript> skutterudites

In this study, indium-filled CoSb₃ skutterudite is synthesized via encapsulated induction melting and subsequent annealing at 823 K for six days, and the crystal structure, lattice constant, filler position, phase homogeneity and stability were investigated. All of the In-filled CoSb₃ samples were n-type conducting samples. The temperature dependence of the electrical resistivity showed In_zCo₄Sb₁₂ is a highly degenerate semiconducting material. The thermal conductivity was reduced considerably by In filling. The highest thermoelectric figure of merit value was achieved when the In filling fraction is 0.25. It was found that the ZT of the In-filled CoSb₃ (In_zCo₄Sb₁₂) was higher than that of the In-substituted CoSb₃ (Co_3.75In_0.25Sb₁₂ and Co₄Sb_11.75In_0.25). This is mainly due to the lower thermal conductivity and higher Seebeck coefficient.     

Electron-doped manganites based on CaMnO<Subscript>3</Subscript>

The work is devoted to a review of magnetic, electrical, and optical properties of electron-doped manganites Ca_{1 − x} Ln _x MnO₃ (Ln stands for rare-earth ions) at the concentrations of the doping ions x from 0 to 0.2. The main attention is paid to the data obtained using single crystals containing vacancies in both the anion and cation sublattices. The features of the multiphase state of the Ca_{1 − x} Ln _x MnO₃ manganites (x < 0.2) are discussed.     

Effects of nano-TiO<Subscript>2</Subscript> dispersion on thermoelectric properties of Co<Subscript>4</Subscript>Sb<Subscript>11.7</Subscript>Te<Subscript>0.3</Subscript> composites

Nano-TiO2/Co4Sb11.7Te0.3 composites were prepared by mechanical alloying (MA) and cold isostatic pressing (CIP) process.The phase composition,microstructure,and thermoelectric properties were characterized.The diffraction spectra of all samples well corresponds to CoSb3 skutterudite diffraction plane.TiO2 agglomerates into irregular clusters.They locate at the grain boundaries or some are distributed on the surface of Co4Sb11.7Te0.3 particles.For composites with high TiO2 content (0.6% and 1.0% TiO2),the phonon scattering by TiO2 particle,pores,and small size grains can result in a remarkable reduction in thermal conductivity.The maximum value of ZT is 0.79 for sample with 0.6 wt.% TiO2 at 700 K,which is 11% higher than that of non-dispersed sample.     

Effect of severe plastic deformation on the structure and properties of the Ni<Subscript>2.16</Subscript>Mn<Subscript>0.84</Subscript>Ga alloy

The effect of severe plastic deformation by torsion (high-pressure torsion or HPT) on the crystalline structure and behavior of electrical resistivity, thermoelectric power, thermal expansion, and magnetic properties of the rapidly quenched Ni_2.16Mn_0.84Ga alloy has been investigated. It has been shown that after HPT treatment of the rapidly quenched submicrocrystalline alloy, a mixture of amorphous and nanocrystalline phases is formed. Electrical properties of the alloy have been explained in terms of the Mott two-band model. Specific features of the magnetic properties of the alloy are related to the coexistence of ferro-and antiferromagnetic interactions in an atomically disordered state of the alloy.     

Hardness,Electrical Conductivity and Thermal Stability of Externally Oxidized Cu-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Composite Processed by SPD

Cu-Al₂O₃ composites prepared by external oxidation method were further enhanced by severe plastic deformation (SPD) processing, including equal-channel angular pressing (ECAP) and high-pressure torsion (HPT) methods. The HV hardness and electrical conductivity of the samples before and after SPD processing were tested. Results revealed that ECAP samples (with an equivalent strain of about 5.34) showed a relative small increase in hardness, whereas a significant decrease in electrical conductivity. The HPT samples (with an equivalent strain of about 6.94) showed not only a much improved hardness but also a higher electrical conductivity. Thermal stability of the SPD-processed Cu-Al₂O₃ composites was tested, and the HPT samples maintained good HV hardness together with high electrical conductivity even at 600 °C. The combination of external oxidation method and HPT processing resulted in enhanced mechanical properties, good electrical conductivity, acceptable thermal stability, and much simplified oxidation process.