Formation of anodic films on sputtering-deposited Al-Hf alloys

The growth of barrier-type anodic films at high efficiency on a range of sputtering-deposited Al-Hf alloys, containing from 1 to 95 at.% Hf, has been investigated in ammonium pentaborate electrolyte. The alloys encompassed nanocrystalline and amorphous structures, the latter being produced for alloys containing from 26 to 61 at.% Hf. Except at the highest hafnium content, the films were amorphous and contained units of HfO₂ and Al₂O₃ distributed relatively uniformly through the film thickness. Boron species were confined to outer regions of the films. The boron distributions suggest that the cation transport number decreases progressively with increasing hafnium concentration in the films, from ∼0.4 in anodic alumina to ∼0.2 for a film on an Al-61 at.% Hf alloy. The distributions of Al³⁺ and Hf⁴⁺ ions in the films indicate their similar migration rates, which correlates with the similarity of the energies of Al³⁺-O²⁻ and Hf⁴⁺-O²⁻ bonds. For an alloy containing ∼95 at.% Hf, the film was largely nanocrystalline, with a thin layer of amorphous oxide, of non-uniform thickness, at the film surface. The formation ratios for the films on the alloys changed approximately in proportion to the hafnium content of the films between the values for anodic alumina and anodic hafnia, ∼1.2 and 1.8 nm V⁻¹ respectively.     

The effect of small additions of indium and thallium on the corrosion behaviour of aluminium in sea water

The effect of small additons of indium and thallium on the anodic behaviour of high purity aluminium (99.999%; 5N) and the anodic and corrosion behaviour of technical purity aluminium (T) was investigated with the aim of confirming the suitability of these alloys for the protection of steel constructions located in sea water. It has been found that the effects of indium and thallium additions on the anodic behaviour are less explicit in technically pure alloys. The effect of thallium on the anodic behaviour of Al-In alloy can be explained by the presence of indium atoms in this alloy and by the high mutual solid solubility of thallium in indium.The ternary alloy A1(T)-0.1% In-0.1% Tl is uniformly dissolved in sea water and has a potential of –900 mV (SCE) in the current density region of 1–10 mA cm^–2.     

Sputtered iridium oxide films as electrocatalysts for water splitting via PEM electrolysis

Thin films of iridium oxide deposited by reactive magnetron sputtering have been investigated as catalysts for electrochemical water splitting in a polymer electrolyte membrane (PEM) cell. The sputtered films possess excellent mechanical stability and corrosion resistance at the high anodic potentials where oxygen evolution takes place. Their catalytic activity has been assessed using the conventional electrochemical methods of cyclovoltammetry and steady state polarisation techniques. A morphology factor assessing the catalyst active surface for a series of sputtered samples with varying thickness/loading has been determined and correlated to the catalytic efficiency. It has been proven that iridium oxide is a very efficient catalyst for oxygen evolution reaction (OER). The best performance with anodic current density of 0.3 A cm⁻² at potential of 1.55 V (versus RHE) has shown the 500 nm thick film containing 0.2 mg cm⁻² catalyst. The results obtained have also demonstrated the advantages of the reactive magnetron sputtering as simple and reliable method for deposition of efficient and cost effective catalysts for PEM electrolysis application.     

Anodic oxidation of Mg-Cu and Mg-Zn alloys

Metastable, solid-solution Mg-0.8 at.% Cu and Mg-1.4 at.% Zn alloys have been anodized up to 250 V at 10 mA cm⁻² in an alkaline phosphate electrolyte at 293 K in order to investigate the enriching of alloying elements beneath the anodic films. Rutherford backscattering spectroscopy (RBS) revealed enrichments to about 4.1×10¹⁵ Cu atoms cm⁻² and 5.2×10¹⁵ Zn atoms cm⁻², which correlate with the higher standard Gibbs free energies per equivalent for formation of copper and zinc oxides relative to that for formation of MgO. The enriched layers were of thickness about 1.5-4.0 nm by medium energy ion scattering (MEIS). The anodic films, composed mainly of magnesium hydroxide, contained copper and zinc species throughout their thicknesses; the Cu:Mg and Zn:Mg atomic ratios were about 18 and 25% of those of the alloys, respectively. Phosphorus species were present in most of the film regions, with a P:Mg atomic ratio of about 0.16. The magnesium ions in the film account for about 30% of the charge passed during anodizing.     

Amorphous-to-crystalline transition of silicon-incorporated anodic ZrO2 and improved dielectric properties

Sputter-deposited zirconium and Zr-16 at.% Si alloy have been anodized to various voltages at several formation voltages in 0.1 mol dm⁻³ ammonium pentaborate electrolyte at 298 K for 900 s. The resultant anodic films have been characterized using X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, glow discharge optical emission spectroscopy, and electrochemical impedance spectroscopy. The anodic oxide films formed on Zr-16 at.% Si are amorphous up to 30 V, but the outer part of the anodic oxide films crystallizes at higher formation voltages. This is in contrast to the case of sputter-deposited zirconium, on which the crystalline anodic oxide films, composed mainly of monoclinic ZrO₂, are developed even at low formation voltages. The outer crystalline layer on the Zr-16 at.% Si consists of a high-temperature stable tetragonal phase of ZrO₂. Due to immobile nature of silicon species, silicon-free outermost layer is formed by simultaneous migrations of Zr⁴⁺ ions outwards and O²⁻ ions inwards. An intermediate crystalline oxide layer, in which silicon content is lower in comparison with that in the innermost layer, is developed at the boundary of the crystalline layer and amorphous layer. Capacitances of the anodic zirconium oxide are highly enhanced by incorporation of silicon due to reduced film thickness, even though the permittivity of anodic oxide decreases with silicon incorporation.     

Importance of water content in formation of porous anodic niobium oxide films in hot phosphate-glycerol electrolyte

Niobium has been anodized at a constant current density to 10 V with a current decay in 0.8 mol dm⁻³ K₂HPO₄-glycerol electrolyte containing 0.08-0.65 mass% water at 433 K to develop porous anodic oxide films. The film growth rate is markedly increased when the water content is reduced to 0.08 mass%; a 28 μm-thick porous film is developed in this electrolyte by anodizing for 3.6 ks, while the thickness is 4.6 and 2.6 μm in the electrolytes containing 0.16 and 0.65 mass% water respectively. For all the electrolytes, the film thickness changes approximately linearly with the charge passed during anodizing, indicating that chemical dissolution of the developing oxide is negligible. SIMS depth profiling analysis was carried for anodic films formed in electrolyte containing ∼0.4 mass% water with and without enrichment of H₂¹⁸O. Findings disclose that water in the electrolyte is a predominant source of oxygen in the anodic oxide films. The anodic films formed in the electrolyte containing 0.65 mass% water are practically free from phosphorus species. Reduction in water content increased the incorporation of phosphorus species.     

Enhanced electrochromic performance of macroporous WO3 films formed by anodic oxidation of DC-sputtered tungsten layers

Self-organized macroporous tungsten trioxide (WO₃) films are obtained by anodic oxidation of DC-sputtered tungsten (W) layers on 10 mm × 25 mm indium tin oxide (ITO)-coated glass. Under optimized experimental conditions, uniformly macroporous WO₃ films with a thickness of ca. 350 nm are formed. The film shows a connected network with average pore size of 100 nm and a pore wall thickness of approximately 30 nm. The anodized film becomes transparent after annealing without significant change in macroporous structure. In 0.1 M H₂SO₄, the macroporous WO₃ films show enhanced electrochromic properties with a coloration efficiency of 58 cm² C⁻¹. Large modulation of transmittance (∼50% at 632.8 nm) and a switching speed of about 8 s are also achieved with this macroporous film.     

Cyclic oxidation processes during anodizing of Al-Cu alloys

The influence of copper on the morphologies of porous anodic alumina has been investigated under current and voltage control using a sputtering-deposited Al-2.7 at.% Cu alloy and a commercial AA 2024-T3 aluminium alloy anodized in either sulphuric acid electrolyte or the same electrolyte but with addition of tartaric acid. The findings indicate that film development involves repeated formation of embryo cells of anodic alumina at the metal/film interface. During the initial stages of anodizing at constant voltage, cell formation is accompanied by current peaks in the current-time response. The porosity of the resultant films has a lateral aspect due to the layering of embryo cells. The thickness of individual layers is proportional to the formation voltage, with a ratio of the order 1 nm V⁻¹. The cell formation is accompanied by enrichment of copper in the alloy, incorporation of copper species into the anodic film, in low amounts relative to the alloy, and evolution of oxygen. These processes disrupt the formation of the classical pore morphology, characteristic of high purity aluminium, due to continuous formation of fresh embryo cells and re-direction of pores. The main effect of the tartaric acid addition to the sulphuric acid was to reduce the rate of anodizing of the alloys at constant voltage by about 10-20%.     

Electrodeposition of magnetic CoPd thin films: Influence of plating condition

The manufacture and properties evaluation of Co-based thin film alloys are extensively studied because of their magnetic properties that make them a critical element in many different applications and devices. Therefore the electrodeposition of CoPd alloy thin films was studied from a chloride bath containing glycine as additive. The cobalt content in the CoPd deposits varied from 6.4 to 94.0 at% by controlling the pH and [Co²⁺]/[Pd²⁺] ratio in the bath. Current efficiencies were independent of the solution pH and bath composition. The morphology of the deposits depended on the applied current density: current densities higher than 50 mA cm⁻² resulted in deposits with a typical cauliflower morphology. For current densities lower than 25 mA cm⁻² cracks was observed. The XRD measurements showed that all CoPd alloys were amorphous. The magnetic properties for CoPd alloys revealed that the coercivity (H_c) values ranged from 84 up to 555 Oe and the magnetic saturation (M_s) from 0 to 1.73 T.     

Investigation of thin sputtered Mn films for electrochemical capacitors

Pseudocapacitive manganese oxide films have been synthesized by anodic oxidation of metallic films deposited by sputtering. Results are presented from an electrochemical investigation into properties of these thin sputtered manganese films. Mn films with thickness ranging from 20 to 200 nm have been sputtered onto Pt coated Si wafers in an Argon atmosphere. Electrochemical oxidation converts the metal film into a porous, dendritic structure which displays significant pseudocapacitance. We have observed a specific capacitance (C_s) of 700 F/g when cycled very slowly at a constant current density of 160 μA/cm². The same films probed by cyclic voltammetry (CV) at a rate of 5 mV/s yielded a lower specific capacitance of 400-450 F/g. Post-oxidation material loading was measured to be in the range of 25-75 μg/cm².     

The structure and electronic properties of passive and prepassive films of iron in borate buffer

The films that form on pure iron during potentiodynamic anodic polarization in aqueous borate buffer were investigated by surface enhanced Raman spectroscopy (SERS), and by electrochemical impedance spectroscopy and Mott-Schottky analysis at selected potentials. According to SERS, the passive film is a bilayer film with an outer layer of an as yet undetermined Fe(III)oxide/hydroxide, identified by a strong Raman peak at 560 cm⁻¹. The inner layer was a spinel compound. The capacitances of passive iron were frequency dependent and a constant phase element (CPE) best described the frequency dispersion. Current increases in cathodic polarization scans confirmed the accuracy of flatband potentials calculated from Mott-Schottky tests at two different film formation potentials. Both films were found to be n-type and flatband potentials of −846 and −95 mV vs. SHE and carrier densities of 1.6 × 10²² and 8.3 × 10²⁰/cm³ were found for films grown at −500 and +1000 mV, respectively. The cathodic polarization curve of passivated iron exhibited a complex shape that was explained by the electronic properties of iron's passive and prepassive films. The reductive dissolution of the films abruptly began when the potential was lowered below their flatband potentials. It is suggested that the cathodic polarization behavior contributes to iron's susceptibility to localized corrosion.     

On the relationship between local voltage maxima and efficiency changes during galvanostatic Ti anodising

The evolution of the voltage signal with time during galvanostatic anodising of bulk Ti has been repeatedly reported in the literature to exhibit a striking local maximum, followed by a decrease in the slope of the V-t curve. While the slope change is well-known to be the result of changes in the anodic growth efficiency, the presence of an associated local voltage maximum has received much less attention. In the first part of this paper, we investigate the fundamental origin of the local V-maximum, which to the best of our knowledge, is as yet still unexplained. We have first of all reproducibly observed this behaviour during anodising of sputtered Ti thin films in 1.0 M H₂SO₄ at a current density of 4 mA/cm². Quantifying the evolution of both the thickness and the density of the anodic oxide films with time led to the conclusion that the observed local V-maximum results from an increase of the anodising ratio. It is then demonstrated that, according to the classical high-field theory for ionic migration, such increase in anodising ratio is to be expected when the growth efficiency decreases to such an extent that the ionic current density falls below the mA/cm² level. We also show that, once the high-field rate constants for the anodic oxide film have been accurately determined, the local V-maximum can be quantitatively reproduced based only on the evolution of the growth efficiency. In the second part, we discuss the physical origin of the changes in the anodic growth efficiency, based on TEM investigations of the microstructural evolution taking place in the film around the transition region. Our results convincingly demonstrate that anatase crystallites are already present in an amorphous film matrix well before the transition region. Instead, a significant increase in electron diffraction intensity was observed for the rutile phase before and after the local voltage maximum.     

Anodic oxidation of bismuth in H2SO4 solutions

Anodic charging curves have been measured on polycrystalline Bi in H₂SO₄ solutions (0·01–6·0 N) at 30°C. The effect of various experimental procedures, eg electrode treatment and stirring, has been established. The anodic behaviour of Bi depends markedly on the acid concentration. In the high range, the results indicate dissolution which follows a Tafel relation. However, in dilute solutions, growth of oxide film occurs, and the potential rises rapidly with time, reaching over 100 V at high cds. Sparking and oxide breakdown start at about 150 V. Oxide growth follows the high field ionic conduction. The reciprocal capacitance is linearly related to the logarithm of cd. The constants of the exponential law, the half-barrier width, and the field strength have been calculated The last lies between 1 and 3 × 10⁶ V/cm at 1 mA/cm². The effect of F⁻ and Cl⁻ ions on oxide growth in H₂SO₄ has been also investigated.     

Effect of Ni content on the corrosion behavior of Cu-Ni alloys in neutral chloride solutions

The effect of systematic increase of Ni content on the electrochemical behavior of the Cu-Ni alloys in neutral chloride solutions was investigated. The pitting corrosion behavior of Cu-Ni alloys with different Ni contents, namely, 5, 10, 30 and 65 mass% Ni, in a stagnant 0.6 mol dm⁻³ NaCl solution of pH 7.0 was studied. The effect of chloride ion concentration on the electrochemical behavior of these alloys was also investigated. The results show that the increase in nickel content decreases the corrosion rate of the alloys in the neutral chloride solution. The increase of chloride concentration up to 0.3 mol dm⁻³ increases the corrosion rate. At higher concentrations ([Cl⁻] > 0.3 mol dm⁻³) the corrosion rate decreases due to the hydrolysis of Cu(I) chloride to form the passive Cu(I) oxide film. The breakdown potential depends on the chloride ion concentration and the nickel content of the alloy. For these investigations conventional electrochemical techniques and electrochemical impedance spectroscopy (EIS) were used. The impedance measurements have shown that the increase of the Ni content and the immersion time of the alloys in the chloride solution increase the corrosion resistance of the alloys. The experimental impedance data were fitted to theoretical values according to a proposed equivalent circuit model.     

Electrodeposited Pd-Co catalyst for direct methanol fuel cell electrodes: Preparation and characterization

Pd-Co alloy has been recently proposed as a catalyst for the cathode of direct methanol fuel cells with both excellent oxygen reduction activity and methanol tolerance, hence electrodeposition of this alloy is an attractive approach for synthesizing porous metal electrodes with high methanol tolerance in direct methanol fuel cells. In this study, we electrodeposited two types of Pd-Co films onto Au substrates by applying different current density (−10 or −200 mA cm⁻²); and then characterized them in terms of morphology, composition, crystal structure, and catalytic activity. Pd-Co deposited at −10 mA cm⁻² was smooth and possessed smaller particles (ca. 10 nm), while that at −200 mA cm⁻² was dendritic (or rough) and possessed larger particles (ca. 50 nm). Both the Pd-Co alloys were found to be almost the same structure, i.e. a solid solution of ca. Pd₇Co₃ with Pd-skin, and also confirmed to possess comparable activity in oxygen reduction to Pt (potential difference at 1.0 μA cm⁻² was 0.05 V). As for methanol tolerance, cell-voltage was not influenced by addition of 1 mol dm⁻³ methanol to the oxidant solution. Our approach provides fundamental technique for synthesizing Pd-Co porous metal electrodes by electrodeposition.     

Highly ion conductive flexible films composed of network polymers based on polymerizable ionic liquids

Ionic liquid-type polymer brushes having different hydrocarbon (HC) chain lengths between polymerizable group and imidazolium ring were synthesized. When the carbon number of HC chain was 6, the ionic liquid-type polymer brush exhibited the highest ionic conductivity of 1.37×10⁻⁴ S cm⁻¹ at 30 °C, reflecting low T_g of −60 °C. Moreover, for the first time, we succeeded in obtaining transparent and flexible films without considerable decrease in the ionic conductivity as compared with that of corresponding monomers by using suitable cross-linkers. The most ion conductive (1.1×10⁻⁴ S cm⁻¹ at 30 °C) film was obtained when tetra(ethylene glycol)diacrylate was used 0.5 mol% to ionic liquid monomer as the cross-linker. This film is one of excellent conductive films among single-ion conductive materials.     

Inducing enantioselectivity in electrodeposited CuO films by chiral etching

Enantiospecificity was induced in racemic CuO films by etching the films in 10 mM solutions of l(+)- or d(−)-tartaric acid. The CuO films were electrodeposited from an aqueous solution of 5 mM CuSO₄, 50 mM glycine, and 200 mM NaOH using a constant anodic current density of 0.1 mA/cm². Etching of the 112 nm thick films was followed in real time using the quartz crystal microbalance. The enantiospecificity of the films was studied by cyclic voltammetry, using the oxidation of the tartrate ion as the probe reaction. Although the as-deposited film showed no enantioselectivity, the films etched in l(+)-tartaric acid were selective for the oxidation of l(+)-tartrate, whereas the films etched in d(−)-tartaric acid were selective for the oxidation of d(−)-tartrate. The induced selectivity is attributed to the production of chiral surfaces on the electrodeposited CuO as a result of the etching process.     

Facile electrosynthesis of novel free-standing electroactive poly((S)-(−)-1,1′-bi-2-naphthol dimethyl ether) films with enhanced main chain axial chirality

Direct anodic oxidation of (S)-(−)-1,1′-bi-2-naphthol dimethyl ether (BNME) in CH₂Cl₂/CHCl₃ containing boron trifluoride diethyl etherate (BFEE) as the supporting electrolyte led to facile electrodeposition of high-quality free-standing poly((S)-(−)-1,1′-bi-2-naphthol dimethyl ether) (PBNME) film on stainless steel (SS)/indium tin oxide (ITO) electrodes. As-formed PBNME films showed good electroactivity and redox stability in CH₂Cl₂-BFEE, BFEE, and even in concentrated sulfuric acid. Both doped and dedoped PBNME films were partly soluble in strong polar solvents, such as dimethyl sulfoxide (DMSO). Quantum chemistry calculations of BNME and FT-IR spectrum of dedoped PBNME films demonstrated that the polymerization probably occurred at 4- and 4′-positions. Optical rotation determination showed that the conformation of the monomer was maintained during the electrochemical polymerization process and the polymer exhibited greatly enhanced optical rotation value with main chain axial chirality compared with that of the monomer. Fluorescent spectral studies indicated that soluble PBNME was a good blue-light emitter with maximum emission at 415 nm and fluorescence quantum yield of 0.15, while solid-state PBNME film showed its emission centered at 380 nm. Furthermore, as-formed PBNME manifested favorable thermal stability and relatively high electrical conductivity of about 10⁻¹ S cm⁻¹ at room temperature.     

Molybdenum alloy electrodeposits for magnetic actuation

This paper deals with the preparation and characterisation of alloys containing molybdenum applicable in MEMS. An electrodeposition process for achieving a homogeneous, low-stressed, soft-magnetic Co-Ni-Mo alloy is described. The electrochemical study allows setting bath composition and deposition conditions useful to perform the deposition process. Deposits with low nickel and molybdenum percentages (11-15 wt%) are virtually useful for magnetic actuation applications. Saccharine is an effective antistress agent and it also decreases grain size and surface roughness of the Co-Ni-Mo layers. The mechanical and magnetic properties of the ternary alloy have been compared with those shown by a binary Co-Mo alloy containing similar molybdenum percentages previously electrodeposited in our laboratory. Thin Co-Ni-Mo films exhibited higher microhardness values than Co-Mo films and better magnetic properties for magnetic actuation (H_c = 50 Oe, M_r = 90 emu g⁻¹ and μ_r = 670). Furthermore, film appearance (such as brightness) and corrosion resistance improved due to nickel presence. Electrodeposition has been tested on silicon/seed-layer substrates and the process selectivity has been investigated on photolithographed silicon. Both alloys are compatible with fabrication techniques involved in MEMS technology. No damage was observed when silicon was removed over alloy films to get stand-alone layers. The response of a microsized valve (silicon + seed-layer + electrodeposited Co-Mo or Co-Ni-Mo film) under an external magnetic field has been explored with good results.     

Kinetic parameters for anodic oxidation of hypochlorite ion on Pt and Pt oxide electrodes in alkaline solution

Kinetic parameters for the anodic oxidation of hypochlorite ion have been determined by means of normal pulse voltammetry by using a platinum disk as the working electrode. By using the working electrode that formed an oxide film by electrochemical pretreatment, the effect of the lattice oxygen of the surface oxide on the reaction was also examined. The measurement results were analyzed by the classical method, and then the analytical results were evaluated by digital simulation. The normal pulse voltammogram of the hypochlorite ion showed quasi-reversible oxidation waves. The apparent rate constant was calculated to be 5.0-8.1 × 10⁻⁴ cm s⁻¹, depending on the electrode surface state. At the low-concentration range of <4.0 mg Cl dm⁻³, the oxidation current was concentration dependent at the cathodically polarized electrode, while it became independent after the anodic polarization.