DVD的调制方式EFM plus（8／16调制）

ＤＶＤ的调制方式ＥＦＭｐｌｕｓ（８／１６调制）张绍高ＤＶＤ（ＤｉｇｉｔａｌＶｉｄｅｏｄｉｓｃ，数字视频光盘，或ＤｉｇｉｔａｌＶｅｒｓａｔｉｌｅＤｉｓｃ，数字通用光盘）的调制方式ＥＦＭｐｌｕｓ（８／１６调制）是在ＣＤ的ＥＦＭ（Ｅｉｇｈｔ－Ｆｏｕｒｔｅｅ...     

综合编码和调制的格码调制（一）

本文首先介绍了有关格码调制（ＴＣＭ）的技术名词，然后重点论述了格码调制的原理、结构以及幅度／相位调制的８态格码调制，最后介绍了多维ＴＣＭ。     

振镜式光束扫描／偏转系统及成像过程的研究

振镜式光束偏转／扫描技术已成为一种具有广泛应用潜力的激光束调制手段，它具有调制速度快（高达８ｋＨｚ），精度高（可达０．０６μｒａｄ）及易于控制等特点。本文着重介绍了利用振镜实现激光束二维扫描的实验研究，探讨利用这一系统完成激光扫描成像的光路；并探讨了利用激光点扫描成像实现监测／检测物体表面的初步研究结果。     

In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究

对Ｉｎ（０．２）Ｇａ（０．８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究．对ＰＲ结果的线形拟合指认了应变多量子阱中子能级的跃迁，并与理论计算结果作了比较．实验对比确认ＰＲ中１１Ｈ、１３Ｈ等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质．而１１Ｌ、３１Ｈ、２２Ｈ等跃迁结构为阶间耦合态，对这些隧穿耦合的低场调制产生三阶微商特性．     

在VHF移动信道中不同条件下BCH码的纠错性能研究

本文在文献［７］基础上研究了采用分组ＢＣＨ码加交错技术抗衰落的性能。模拟了：ＢＣＨ（６３ ３９ ４）码、ＢＣＨ（１２７ ７８ ７）码和ＢＣＨ（１２７ ６４ １０）码在交错与非交错两种不同情况下，融载波调制方式分别为ＦＳＫ３００ｂｉｔｓ／ｓ、ＤＰＳＫ１２００ｂｉｔｓ／ｓ、ＱＰＳＫ２４００ｂｉｔｓ／ｓ和８ＰＳＫ ４８００ｂｉｔｓ／ｓ，不同车速分别为：４０ｋｍ／ｈ和１００ｋｍ／ｈ时的纠错性能。     

偏振模色散对飞秒孤子脉冲传输的影响

以Maxwell电磁场理论为基础，在综合考虑了高阶色散、高阶菲线性、自相位调制、交叉相位调制、自变陡、脉冲内喇曼散射以及偏振模色散（PMD）等因素的基础上，推导了飞秒孤子脉冲在双折射光纤中传输的耦合非线性薛定谔方程（NLSE）。利用分步傅立叶方法对该方程进行了数值计算，通过对该系统的仿真，研究分析了PMD对飞秒孤子传输的影响。结果发现当PMD参量Dp≤0．1ps／km^1／2时，输出脉冲宽度和峰值功率相对于初始脉冲几乎不变，随着Dp值的增大，脉宽增加，峰值功率降低．当Dp≥1．0ps／km^1／2时，脉冲显著展宽，孤子的两偏振分量发生严重走离。     

卫星通信中的语音传输新技术

随着卫星通信技术的不断成熟和发展，卫星通信网络作为光缆传输网络的重要补充和备份支撑，发挥着重要的作用。然而由于卫星通信频点内带宽狭窄所造成的通信容量有限这一固有缺陷，使得在卫星通信中占最大比例的语音通信大容量传输受到限制，到目前为止，在商用卫星通信中应用最广泛的语音通信技术是中速数据速率（ＱＰＳＫ／ＩＤＲ）技术。为了更加高效地利用有限的无线频率资源，一种称为格形编码调制（ＴＣＭ／ＩＤＲ）的语音传输新技术正逐步应用到卫星通信网络中。一、 ＴＣＭ／ＩＤＲ技术简介ＴＣＭ／ＩＤＲ技术同时使用８ＰＳＫ调制…     

数字电视中载噪比(C/N)和调制误码率(MER)对BER的影响

为保证数字电视信号传输质量，须合理规划设计C／N和MER指标，确保BER指标符合要求。讨论数字电视系统中载噪比（C／N）和调制误码率（MER）对误码率（BER）的影响，分析QAM调制原理。     

合肥有线网络改造规划概要及建设和运维情况的分析探讨（下）

众所周知，有线CM系统的基本特征是上、下行不对称传输，在DOCSIS1.1／1．0标准中，下行占用6MHz（美标）或8MHz（欧标）频率带宽，采用64QAM或256QAM调制方式通常，选用64QAM时，下行速率30．3Mb／s（美标）或41．7Mb／s（欧标）；上行调制带宽有0．2／0．4／0．8／1．6／3．2MHz五种，采用QPSK或16QAM两种调制方式．因而可以提供10种不同的上行信道格式来适应上行信道不同的状况．     

如何通过帧中继网传输语音

如何通过帧中继网传输语音在将电话呼叫信号送往公用网络之前，数字语音交换机利用脉冲编码调制（ＰＣＭ）把模拟语音信号转换成数字比特流。伴随ＰＣＭ编码而进行的取样，产生８ｂｉｔ字为单位的数据流．速率为６４ｋｂｉｔ／Ｓ。当数据流送入帧中继交换机时，交换机运用...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.