E波段折叠波导行波管集成极靴结构设计及仿真

为进一步提升毫米波折叠波导行波管的输出功率,通过整体加工的工艺方法,将折叠波导慢波结构和周期永磁聚焦系统在母材上同时加工,形成一种集成极靴结构。基于圆形注电子光学系统,设计了E波段折叠波导行波管的集成极靴结构。利用三维电磁场模拟软件(CST)的微波工作室,设计并模拟了慢波结构的冷特性参数,并根据慢波结构尺寸设计周期永磁聚焦系统。通过电磁工作环境仿真软件(OPERA)对磁场进行仿真验证,最终整管粒子数值模拟(PIC)计算结果表明,在61~71 GHz频带内可获得大于1 kW的饱和输出功率。该集成极靴结构在提供强轴向磁场的同时,具有结构紧凑、散热性好等优点。     

W波段多种槽加载折叠波导行波管的研究

该文提出了3种槽加载折叠波导行波管慢波结构:三角形、梯形和燕尾形槽加载折叠波导。分析比较了不同槽形状对慢波结构的色散特性和耦合阻抗的影响。利用粒子模拟的方法对W波段4种槽加载折叠波导行波管的非线性注-波互作用进行了研究;在相同的电子注参数和输入功率的条件下,对输出功率、电子效率和增益等参量进行了比较。在多种槽加载结构中,梯形槽加载折叠波导输出功率(255 W)和增益(37.1 dB)最大,电子效率最高(10.7%);燕尾形槽加载折叠波导达到饱和所需要的互作用电路最短(64.2 mm);三角形槽加载折叠波导的3 dB带宽最宽。     

W波段折叠波导慢波结构设计及三维注波互作用模拟

本文综合分析了折叠波导的几何尺寸和电子束参数，运用电磁场软件MAFIA的粒子模拟程序对三维折叠波导慢波结构进行了模拟．模型中，电磁波通过波导模式导入；为了克服较大空间电荷效应造成的电子注发散，使用了纵向聚焦磁场．基于三维互作用模型得到了W波段折叠波导的模拟结果，该结果可以对折叠波导慢波结构的三维互作用性能进行预测和分析．     

W波段行波管功率提升研究

行波管为发射机提供放大信号,其输出功率直接决定着系统的作用距离,是系统的核心部件之一。本文从提升电子效率和电子注功率两方面开展研究,以提升W波段行波管输出功率。基于折叠波导互用电路相速跳变设计,研制出8 GHz带宽内输出功率大于250 W的W波段行波管。提出非半圆弯曲折叠波导与相速跳变技术结合的设计方法,使W波段行波管输出功率和电子效率最高分别达到647 W和13.4%。提出一种四端口式高频结构和一种双弧弯曲折叠波导慢波结构,大幅提升了行波管对工作电流的聚焦能力,基于两种新型结构的创新研究,完成了千瓦级W波段行波管设计。     

1.03THz折叠波导慢波结构及电子光学系统研究

太赫兹真空电子器件成为未来主要的发展方向,本文对1.03 THz折叠波导慢波结构及电子光学系统进行了研究,分析了不同电子注通道形状对于折叠波导特性的影响,包括色散特性、耦合阻抗、衰减特性、功率、增益等,并且利用OPERA 3D软件设计了电子光学系统。仿真结果表明,在中心1.03 THz频率处,与矩形电子注通道折叠波导慢波结构相比,圆形电子注通道的结构色散曲线更为平缓,耦合阻抗提升6.9%,损耗降低6.8%;在10 GHz带宽内功率提升47.4%,增益提升1.2 dB,互作用长度缩短12.3%。在工作电压为17.4 kV时,阴极发射电流大于3 mA,电子注半径为0.012 mm,在均匀区永磁聚焦系统中可稳定传输。     

0.22 THz宽带折叠波导慢波结构的设计

通过对折叠波导的理论分析,提出一种快速设计折叠波导慢波结构的方法。优化设计了中心频率为0.22 THz的折叠波导慢波结构,分析了结构参数对高频特性的影响。为防止振荡,仿真中采用截断的慢波结构。互作用仿真表明,在电子注电压为16 kV,电流为10 mA情况下,中心频率处增益为23.9 dB,输出功率为1.2 W。其中3 dB带宽大于14 GHz(0.214 THz~0.228 THz),带内输出功率大于0.5 W,在7 GHz(0.217 THz~0.224 THz)范围内输出功率大于1 W。     

利用周期结构电磁止带特性的小型化高功率太赫兹振荡器

高性能实用化辐射源是太赫兹应用的关键器件,利用周期结构电磁色散中的止带区域具有耦合阻抗高的特点,电子注和电磁波能够高效互作用,可以实现大功率太赫兹振荡器。带边振荡器(BO)相比于传统的返波振荡器(BWO),可以实现大功率输出,在W波段能达到百瓦量级,太赫兹波段能达到瓦级;采用周期永磁聚焦系统,可以实现小体积轻质量;慢波结构尺寸短,结构简单;成本低,具有批量生产能力。本文提出可构建3π止带的交错子周期折叠波导慢波结构(FWG SWS)和双频双模双向带边振荡器工作机理,采用皮尔斯双阳极电子枪、周期永磁聚焦系统、金刚石输能窗以及高效率收集极,设计和研发了频率在100 GHz以上的几种带边振荡器,实现了100 GHz频段140 W的功率输出,120 GHz频段实现了30 W的功率输出,在300 GHz实现了1 W以上的功率输出。     

折叠波导慢波结构特性的研究

应用电磁场仿真软件对折叠波导慢波结构进行理论分析、结构设计和数值模拟。计算和分析了折叠波导的色散特性和散射参量,根据折叠波导特殊结构采用了整体极靴结构。模拟得出了折叠波导的周期磁场,通过调节磁场大小对电子注进行有效聚焦,并得到了电子束在磁场中的运动轨迹。结果表明,折叠波导是一种很适合用作毫米波大功率行波管的慢波结构。     

W波段平面集成行波管高频系统设计及验证

针对W波段平面一维阵列集成行波管设计,采用非半圆弯曲变形折叠波导慢波结构和聚焦极调制皮尔斯电子枪,基于CST、MTSS和Opera软件优化设计了集成行波管高频系统和电子光学系统,实现了W波段低电压小电流工作的低功率行波管设计,通过周期永磁(PPM)聚焦系统制管验证了高频系统和电子枪设计的合理性。测试结果表明,行波管在工作电压12.62 kV,工作电流31.6 mA条件下,输出功率大于10 W的带宽达到5 GHz,增益优于28 dB,总效率优于10%,测试结果与设计结果具有较好一致性,为W波段行波管实现阵列集成提供技术支撑。     

折叠波导行波管PIC 模拟中的相位分析方法研究

由于非线性计算特别是场相位方面缺乏专门的分析工具及方法,一直难以对折叠波导行波管的电子效率及副特性进行准确分析。通过CST PARTICLE STUDIO的PIC仿真模块,利用行波管注波互作用中的轴向基波电流与轴向基波电场的相位差表征注波相位关系,提出了一种相位分析方法。通过比较V波段折叠波导行波管单跳变周期结构与均匀周期结构的注波互作用模拟结果,揭示了注波互作用中相位聚焦的物理机理,优化后电子效率提高了5.13%,验证了PIC模拟中相位分析方法的合理性。     

一种高效率多注毫米波行波管的设计模拟

对某Ka波段7注耦合腔行波管慢波系统进行了模拟,分析了多注耦合腔行波管的单腔冷测特性、周期永磁聚焦（PPM）系统以及PPM聚焦系统下的注-波互作用,模拟结果表明：在中心频率34.5GHz处,其饱和输出功率达到829W,增益43.16dB,带宽约1.4GHz,电子效率高达30.37%。     

A 500-W coupled-cavity TWT for Ka-band communication

Worldwide demand for high-power amplifiers for digital satellite communication at Ka-band frequencies between 27 and 31 GHz is steadily increasing (2003). Communication and Power Industries (CPI) has developed a 500-W periodic permanent magnet focused coupled-cavity traveling wave tube (TWT) for conduction-cooled amplifier systems, which is being introduced into the commercial satellite communication market. The TWT is capable of greater than 500-MHz instantaneous bandwidth and is cathode voltage tunable from 28.3 to 30 GHz. The TWT may be operated saturated at the 500-W output power level or backed off from saturation in the linear mode. CPI's Satcom Division has integrated the TWT into a conduction-cooled transmitter box suitable for antenna hub-mount applications. The amplifier uses predistortion networks to provide a high degree of linear response when operated in output power back-off mode.     

基于GaN HEMT的13～17 GHz收发多功能芯片

基于GaN高电子迁移率晶体管(HEMT)工艺设计制作了一款收发(T/R)多功能芯片(MFC),主要用于射频前端收发系统.该芯片集成了单刀双掷(SPDT)开关用于选择接收通道或发射通道工作,芯片具有低噪声性能、高饱和输出功率和高功率附加效率等特点.芯片接收通道的LNA采用四级放大、单电源供电、电流复用结构,发射通道的功率放大器采用三级放大、末级四胞功率合成结构,选通SPDT开关采用两个并联器件完成.采用微波在片测试系统完成该芯片测试,测试结果表明,在13～ 17 GHz频段内,发射通道功率增益大于17.5 dB,输出功率大于12W,功率附加效率大于27％.接收通道小信号增益大于24 dB,噪声系数小于2.7 dB,1 dB压缩点输出功率大于9 dBm,输入/输出电压驻波比小于1.8∶1,芯片尺寸为3.70 mm×3.55 mm.     

Application of a nonharmonic magnetic-field distribution for focusing of intense electron flows in magnetic periodic focusing systems

The results of theoretical and experimental investigation of focusing of intense extended electron flows in periodic magnetic fields with a nonsinusoidal distribution are presented. An easily realizable nonharmonic distribution that has three local maxima on the magnetic-field half-period and ensures small fluctuations of the boundary of an intense electron flow at high values of the field parameter is found. The results of application of magnetic periodic focusing systems (MPFSs) with the obtained distributions in pulsed traveling-wave tubes with a slow-wave structure integrated with the MPFS pole pieces are presented.     

A Tapered Ridge-loaded Folded Waveguide Slow-wave Structure for Millimeter-wave Traveling-wave Tube

This paper presents a tapered ridge-loaded folded waveguide (FWG) slow-wave structure (SWS) for broadband and high power millimeter wave traveling wave tube (TWT). The radio-frequency characteristics including dispersion properties, interaction impedance, S-parameters are analyzed. And based upon these results, the nonlinear large signal performance of the tapered ridge-loaded folded waveguide TWT working in W-band is simulated by 3-D particle-in-cell code. In the same ridge length, the tapered FWG has lower reflection and radio-frequency loss than the normal ridge-loaded FWG. Besides, the tapered ridge-loaded FWG TWT also has higher electron efficiency and larger bandwidth, which is more suitable for millimeter-wave TWT.     

A Ka‐Band 6‐W High Power MMIC Amplifier with High Linearity for VSAT Applications

A Ka‐band 6‐W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15‐μm GaAs pHEMT technology. This three‐stage amplifier, with a chip size of 22.1 mm² can achieve a saturated output power of 6 W with a 21% power‐added efficiency and 15‐dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class‐A bias and demonstrates an output third‐order intercept point of greater than 43.5 dBm over the above‐mentioned frequency range.     

A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.      

Improved Millimeter Wave Noise Source on BWO

The operation peculiarities and performance of new millimetric noise source on BWO are described. To increase the interaction efficiency and to extend the operation frequency band the modified vane-type slow-wave structure is proposed to use. Packaged K _a-band source provides noise with power spectrum width controlled within 10 - 300 MHz, electronic tunability of the frequency of 10-12% and has the output power up to 18W and electronic efficiency of 5.5%. Electronic tuning of noise frequency has a discontinuities, but the operation frequency band is almost fully covered. To have a possibility to tune the noise power spectrum maximum to the desired frequency both the electronic tuning and mechanical one can be used. Application of the magnet system with focusing magnetic field magnitude up to 4300 G allows to increase output power level and electronic efficiency up to 32 W and 7% respectively.