Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.     

Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition

Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray dif- fraction (XRD), atom force microscopy (AFM), and Fourier transform infrared spectrum (FTIR) were employed to measure the crystalline structure, surface morphology, and infrared opdcal transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO<,2>, with preferred orientation of (011). The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80℃. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same tempera- ture across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.     

钙钛矿型La1-xSrxMnO3纳米薄膜的制备及其光催化性能

采用溶胶-凝胶法和浸渍提拉技术在载玻片基底上制备出钙钛矿型La1-xSrxMnO3纳米薄膜;采用TG/DTA技术分析前驱体凝胶的热分解历程;利用AFM观察薄膜的形貌特征;通过XRD进行物相分析,并计算其晶粒尺寸。结果表明,La1-xSrxMnO3薄膜在600℃形成,为钙钛矿结构,其平均晶粒尺寸为10.349nm。采用该薄膜对多种水溶性染料进行光催化降解试验的结果表明,掺杂后该类纳米薄膜有较好的光催化效果,当x=0.2时光催化效果最好。     

钼酸铋薄膜的化学溶液制备技术及其性能表征

使用化学溶液制各技术在硅(100)衬底上制备出符合化学计量比的钼酸铋(α相)薄膜.采用X射线衍射(XRD)分析的研究结果表明,所制备的薄膜具有单一的单斜晶相结构利用原子力显微镜(AFM)对其表面形貌进行表征,验证了实验过程中溶剂的改变对薄膜结构和表面形貌产生的影响;使用荧光发射仪研究了薄膜在室温下的发光特性.结果表明,通过化学溶液制备技术可以制备出具有单一晶相的钼酸铋(α相)薄膜,该薄膜具有良好的光致发光特性.     

Crystal structure and electrochemical behaviors of Pt/mischmetal film electrodes

The Ml(La-rich mischmetal0films with a thin Pt layer on the substrate of chemically coarse ITO glass or silicon slices were prepared by magnetic sputtering tchnique.The crystal structure and surface morphology of the films were investigated by X-ray diffraction(XRD)analysis and atomic force microscopy(AFM),respectively, The electrochemical hydridation/dehydridation behaviors of the films in KOH solution were studied by using cyclic voltammagraph and electrochemical impedance spectrum(EIS)as well.The AFM results show that the Pt cover layer on the M1 films is of island structure with a grain of 150-200nm in size.The presence of a thin Pt layer can provide sufficient high electrocatalytic activity for the electrochemical charge-transfer reaction.The electrochemical reduction and oxidation reaction occur on the Pt layer,and the diffusion of H into the Ml film is the rate-controlled step.The Pt coatings also act as protective layers,preventing oxidation and/or poisoning of the underlying Ml films in air.     

直流磁控溅射法在玻璃基片上制备TiN薄膜

采用直流反应磁控溅射法在玻璃片上制备了TiN薄膜,研究不同制备工艺条件与薄膜性能之间的关系。用紫外-可见光分光光度计测试了不同沉积时间和N2流量条件下TiN薄膜透光率;用X射线衍射仪分析了不同N2流量和溅射功率条件下TiN薄膜结构;用扫描电镜(SEM)观察了TiN薄膜的表面腐蚀形貌,用恒电位仪对TiN薄膜的耐腐蚀性进行了分析。结果表明:当沉积时间为2min,N2流量为15mL/min时,在可见光区有较高的透光率,在近红外区的透光率很低;当N2流量为15mL/min,溅射功率为4kW时,TiN薄膜的结晶最致密;当溅射功率为4kW时,TiN薄膜具有较好的耐腐蚀性。     

掺钼对二氧化钒薄膜热致变色特性的影响

通过溶胶-凝胶和真空热处理工艺在石英基底上制备出不同掺Mo量的二氧化钒薄膜。对薄膜进行了X射线衍射及热分析,并测试了其电阻及7.5~14μm波段红外热图随温度的变化,研究了Mo掺杂对二氧化钒薄膜热致变色性能的影响。结果表明,Mo进入VO2晶格,替换了部分V的位置;随着掺Mo量的不断增加,相变温度不断降低,但电阻突变量级比未掺杂时有所减小;掺Mo量(MoO3:V2O5,下同)为5%时,相变温度可降至45℃左右;红外热图分析表明,Mo掺杂VO2薄膜的7.5~14μm波段发射率可在较低温度下突变降低,薄膜在温度增加时可在较低温度水平上主动控制自身辐射强度、降低其辐射温度。     

碳化硼薄膜的电子束蒸发制备及表面分析

采用电子束蒸发技术制备碳化硼薄膜,利用X射线衍射(XRD)分析了薄膜的结构,测量了薄膜的X射线光电子能谱(XPS),并利用原子力显微镜(AFM)对薄膜进行表面分析.XRD结果表明:薄膜的结晶性随着衬底温度的升高逐渐转好,在较低的衬底温度下制备出多晶碳化硼薄膜.XPS分析得到了碳化硼薄膜表面的化学成分和结构特性,其主要成分为B_4C.AFM结果表明,薄膜表面光滑平整、均匀致密,随着衬底温度的升高薄膜均方根(RMS)粗糙度逐渐增大.     

Bacterial adhesion to protein-coated surfaces: An AFM and QCM-D study

Bacterial adhesion to biomaterials, mineral surfaces, or other industrial surfaces is strongly controlled by the way bacteria interact with protein layers or organic matter and other biomolecules that coat the materials. Despite this knowledge, many studies of bacterial adhesion are performed under clean conditions, instead of in the presence of proteins or organic molecules. We chose fetal bovine serum (FBS) as a model protein, and prepared FBS films on quartz crystals. The thickness of the FBS layer was characterized using atomic force microscopy (AFM) imaging under liquid and quartz crystal microbalance with dissipation (QCM-D). Next, we characterized how the model biomaterial surface would interact with the nocosomial pathogen Staphylococcus epidermidis. An AFM probe was coated with S. epidermidis cells and used to probe a gold slide that had been coated with FBS or another protein, fibronectin (FN). These experiments show that AFM and QCM-D can be used in complementary ways to study the complex interactions between bacteria, proteins, and surfaces.     

硼碳氮薄膜的制备与表征

用电子束蒸发的方法在单晶硅(100)基片上制备了硼碳氮薄膜,通过椭圆偏振仪、X射线衍射仪(XRD)、X光电子能谱仪(XPS)、傅立叶红外光谱仪(FTIR),测试分析了薄膜厚度均匀性、成分与结构.结果表明,薄膜均匀性较好,薄膜的沉积速率非常慢;薄膜在衬底温度为常温下沉积已是晶态的,随着衬底温度升高到450 ℃,其结晶性逐渐增强;薄膜不是石墨与BN的混和膜而是C、B、N相互结合成键.     

退火工艺对二氧化钛薄膜光催化性能的影响

利用磁控溅射法制备得到二氧化钛薄膜,将薄膜在高温管式炉中分别进行退火,利用XRD、AFM和紫外-可见光谱仪研究了不同温度下退火前后薄膜的晶相结构、光学性能和光催化性能。结果表明,随着退火温度的升高二氧化钛的晶相由锐钛矿向金红石转变,600℃时为两相共存,表面颗粒大小也会有相应变化,锐钛矿相表现出了更好的光催化性能。     

Dependence of characteristics of LaB6 films on DC magnetron sputtering power

Lanthanum hexaboride(LaB₆) thin films were deposited on glass substrate by DC magnetron sputtering technology, and the AFM, XRD and scratch tests were used to characterize the deposited films. Influences of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness is below 4.3 nm. The LaB₆ film shows the crystalline structure with the grain less than 100 nm. The XRD pattern identifies that the crystal structure of the films is in accordance with that of bulk LaB₆, and the (100) crystal face is dominated. The average grain size decreases firstly and then increases with increasing power, and reaches the minimum of 40 nm when the sputtering power is 44 W. Moreover, the intensity of peaks in XRD pattern increases firstly and decreases afterward with increasing power. When the sputtering power is 50 W, the peak intensity reaches the maximum, showing an intense relationship between the power and crystal structures. The scratch test shows that interface bonding strength of the film/substrate is higher at the power of 44 W than the others, due to the formation of the nanosized crystals and their improved surface energy.     

Synthesis of carbon nitride thin films on Si(100) surface by using penning-type discharge sputtering technique

Carbon nitride thin films (CN_x) were successfully synthesized on Si(100) substrate by a using penning-type discharge sputtering technique. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). The bonding structures in the membrane were characterized by both X-ray photoelectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy.     

Ta/[NdFeB/Nd]_n/Ta(n=1,5,8,10)多层膜磁性能研究

采用磁控溅射法制备了Ta/[Nd Fe B/Nd]n/Ta(n=1,5,8,10)多层膜。采用X射线衍射仪、振动样品磁强计及原子力显微镜对薄膜样品的晶体结构、磁学性能及表面形貌进行了测试分析;并对薄膜的温度稳定性进行了测试。结果表明,在Nd Fe B与Nd的总厚度保持不变的情况下,随Nd Fe B/Nd层数的增加薄膜的矫顽力先增大后减小,其中n=8时样品磁性能最好。最佳磁性能为H ci=1995 k A/m,(BH)max=111.3 k J/m3。     

磁控溅射Cu膜表面形貌演化的多尺度行为

用原子力显微镜(AFM)观察磁控溅射Cu膜的表面形貌,并基于功率谱密度(PSD)和粗糙度测量方法对薄膜进行了量化表征,研究了薄膜表面演化的动力学标度行为.结果表明:薄膜表面演化具有多尺度特征,在全域和局域呈现两种不同的标度行为.全域的粗糙度指数αg≈0.83,生长指数βg≈0.85;而局域的粗糙度指数α1≈0.88,生长指数β1≈0.26.这种差异揭示了薄膜生长机制的尺度依赖性.薄膜全域表面演化为异常标度行为,这归因于体扩散导致了晶粒几何形态的急剧变化;而局域表面演化呈现表面扩散控制的生长行为.     

纳米压痕过程的多尺度模拟与Rice-Thomson位错模型分析

采用多尺度准连续介质法（简称QC方法）对单晶Ag薄膜纳米压痕过程进行模拟,研究压头宽度对纳米压痕过程中接触应力分布、位错形核临界载荷以及纳米硬度的影响,并用Rice-Thomson位错模型（简称R-T位错模型）进行分析。结果表明,纳米压痕获得的载荷-位移曲线呈现出的不连续性与位错之间的协同作用密切相关;压头尺寸对纳米压痕过程中接触应力分布、位错形核临界载荷以及纳米硬度具有明显的影响：随着压头宽度的增加,法向和切向接触应力以及纳米硬度值递减,呈现出明显的压头尺寸效应;而压头下方薄膜内位错形核临界载荷却递增,且与压头半宽度的平方根成正比。模拟结果与相应实验结果以及R-T位错模型计算结果吻合     

SrMoO4薄膜的化学溶液制备技术和发光性质研究

利用化学溶液技术制备了具有单一白钨矿结构的SrMoO4多晶薄膜.用X射线衍射仪(XRD)分析了薄膜的晶相结构,用红外光谱(IR)对薄膜的均一性进行了表征,用原子力显微镜(AFM)对薄膜的表面形貌进行了观察.采用荧光光谱仪测试了所制SrMoO4薄膜在不同温度下的光致发光特性.研究结果表明,在276 nm的紫外光激发下,钼酸锶薄膜室温条件下显示出良好的光致发光特性,呈现宽带(～300 nm)的发光特征.另外,光致发光光谱的峰值呈现出明显的温度漂移特性,从511 nm(11 K)变化到484 nm(293 K).此外,本文还讨论了SrMoO4薄膜在闪烁材料和紫外成像薄膜材料方面的可能应用.     

Threshold voltage control of 2,3 benzanthracene organic thin-film transistor by visible light for integration of transistors into electronic circuits

The organic field-effect transistor having 2,3 benzanthracene as active layer grown on SiO₂ dielectric layer was fabricated. AFM results indicate that 2,3 benzanthracene thin film is formed from homogeneous small crystal grains with an average diameter about 200 nm. The electrical parameters such as mobility, threshold voltage, I_on/I_off ratio and SS value were determined. The obtained I_on/I_off and S values increase with visible light illumination due to more photogenerated charges. The mobility and threshold values were changed by visible light illumination. The organic thin film transistor exhibits a photovoltaic effect in turn-on state. The control of the threshold voltage of 2,3 benzanthracene-based organic thin film transistor was achieved by visible light illumination. The change in the threshold voltage is enough for the electronic technology applications of organic thin film transistors.     

双(2,2,6,6-四甲基-3,5-庚二酮酸)钯(Ⅱ)的制备及成膜性能

以二氯化钯和2,2,6,6-四甲基-3,5-庚二酮为原料,在甲醇中合成了一种新的β二酮前驱体-双(2,2,6,6-四甲基-3,5-庚二酮酸)钯(Ⅱ)。通过元素分析、红外光谱、核磁共振氢谱及单晶X射线衍射等技术对合成的前驱体进行了结构表征。热重-差热分析表明,在N2气氛中,当温度升到291℃时,前驱体基本挥发完全。采用合成的前驱体通过金属有机化学气相沉积(MOCVD)技术在石英上沉积制备钯薄膜,利用XRD和AFM分析手段对薄膜的结构和表面形貌进行了表征。结果表明,所得到的薄膜纯净,无其他杂质存在,薄膜表面连续、致密。     

Controlling the particle size of nanobrookite TiO2 thin films

In this study, pure nanobrookite TiO₂ thin films were successfully deposited on glass substrates with the spin-coating method using titanium butoxide and acetic acid. The particle size of TiO₂ films was controlled by the water:AcAc volume ratio. This study shows that it is possible to obtain single oriented pure brookite films. The structural and optical properties of the nanobrookite TiO₂ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible spectroscopy (UV-vis), scanning electron microscopy (SEM), spectrophotometer (NKD), and Fourier transform infrared spectrometer (FTIR).