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1.
Spherical shaped anatase nanoparticles (ø 5 nm) have been synthesized in the ionic liquid 1-(3-hydroxypropyl)-3-methylimidazolium-bis(trifluoromethanesulfonyl)amide from titanium tetraisopropoxide by ultrasound assisted synthesis under ambient conditions. XRD, EDX, TEM, XPS, Raman, UV–vis, PL and BET measurements have been employed for characterization of the nanostructure of as-prepared TiO2. XRD and Raman measurements both show that the obtained material is crystalline with anatase structure. The morphology of TiO2 nanoparticles was characterized by transmission electron microscopy (TEM). The bandgap of the TiO2 nanocrystals estimated from XRD and UV–vis measurements is about 3.3 eV. The surface area of a typical sample is 177 m2 g−1. The synthesized anatase nanocrystals show good photocatalytic activity in the degradation of methylorange.  相似文献   

2.
The hysteresis effect is a common problem in graphene field-effect transistors (FETs). Usually, the external doping to graphene is considered to be responsible for the hysteresis behavior, but is not yet clearly understood. By monitoring the doping of graphene and the hysteresis in graphene FETs under different atmospheres using in situ Raman spectroscopy, it is confirmed that the electrochemical doping of O(2) /H(2) O redox couple to graphene is responsible for the hysteresis effect. In addition, Raman spectra of graphene on SiO(2) substrate show stronger doping than that suspended, which indicates that SiO(2) substrate plays an important role in the doping of graphene. Herein it is proposed that the doping species (H(2) O and O(2) ) are bounded at the interface of graphene/SiO(2) substrate by hydrogen-bonds with the silanol groups on SiO(2) substrate. The dynamic equilibrium process of the charge-transfer between H(2) O/O(2) redox couple and graphene under electrical field modulation is carefully analyzed using Marcus-Gerischer theory. This work provides a clear view to the mechanism of the hysteresis effect, and is of benefit to a reliable design to suppress the hysteresis in graphene FETs.  相似文献   

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