Preparation of Li–Al–O films by laser chemical vapor deposition

Li–Al–O films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (T_dep) of 800–1300 K and molar ratios of Li to Al precursors (R_Li/Al) of 0.1–12. Single-phase α-LiAl₅O₈ films having faceted grains with pyramidal and polygonal shapes were obtained at T_dep = 1107–1280 K and R_Li/Al = 0.1–2.9. Single-phase γ-LiAlO₂ films having pyramidal grains were prepared at T_dep = 984–1238 K and R_Li/Al = 0.9–10.6. Under the conditions of T_dep = 923 K and R_Li/Al = 11.4, single-phase β-Li₅AlO₄ films with a fluffy morphology were deposited. The highest deposition rate of Li–Al–O films was 98 μm h⁻¹ with a mixture of γ-LiAlO₂ and β-Li₅AlO₄ at T_dep = 944 K.     

Influence of annealing on ZnO films grown by metal–organic chemical vapor deposition

Zinc oxide (ZnO) films were deposited on silica glass substrates using metal–organic chemical vapor deposition (MOCVD) with diethyl zinc (DEZn) as the Zn precursor and ethanol as the oxygen source. Annealing was performed at 600°C for 1 h in air. The X-ray diffraction (XRD) patterns of the samples show sharp diffraction peaks for ZnO (0002), which indicates that the films are highly c-axis oriented. The films were also characterized by measuring the optical transmission spectrum, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XPS spectra showed that the ZnO films changed from O-rich to Zn-rich after being annealed.     

Preparation of glasses in the Ge–S–I system by plasma-enhanced chemical vapor deposition

The glass samples of the Ge–S–I system were synthesized by plasma-enhanced chemical vapor deposition (PECVD) in a low-temperature non-equilibrium RF-plasma discharge. The vapors of S and GeI₄ were the initial substances. The process was carried out in a flowing quartz reactor at the walls temperature of 300–500 °C and the total pressure range of 1.9–22.8 Torr. The phase and the elemental compositions of the deposited glassy batches were investigated. The glasses obtained by melting of the solid reaction products were homogenized in the evacuated quartz glass ampoule and they were studied by DSC, X-ray microanalysis, and atomic emission spectroscopy. The proposed method allows to prepare the glasses of the system Ge–S–I with Si content less than 3 ⋅ 10⁻⁵ wt.%.     

Gap-filling of Cu–Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

In this work, Cu–Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO₂ trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu–Al alloy. The Ru/SiO₂ trench, filled conformally and voidlessly by the Cu–Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.     

Surface engineering of Ti–O films by photochemical immobilization of gelatin

Crystalline Ti–O films were prepared by unbalanced magnetron sputtering and the structure was confirmed by XRD. An organic layer of 3-aminopropylphosphonic acid (APP) was first introduced on the Ti–O films by self-assembling. The stability of the APP on Ti–O films was confirmed by XPS and FTIR analysis. Simultaneously, azido group was introduced in gelatin molecule to act as photoreactive point. The derivated gelatin was spin-coated onto the self-assembled layer and immobilized by UV irradiating. Chemical patterned surface was obtained by using a photomask when irradiating and confirmed by sirius red staining and surface profile analysis. Measured by surface profilometer, the thickness of the immobilized gelatin was about 5–20 nm. The adhering of human endothelial EVC304 cells on APP modified surface was enhanced in the cell culture test. Moreover, the adherence and growth of cells were prior on gelatin-immobilized region visually seen on the patterned surface. This result indicated gelatin-immobilized Ti–O surface can serve as a biocompatible biomaterial for endothelialization.     

Preparation and characterization of Ba2TiSi2O8 ferroelectric films produced by sol–gel method

Fresnoite (Ba₂TiSi₂O₈, BTS) thin films were grown on polished Si(100) substrates by sol–gel method. The films were characterized using Fourier transform infrared spectroscopy (FTIR), Raman scattering spectroscopy, X-ray diffraction (XRD) and atom force microscopy (AFM). The results reveal that the crystallinity of fresnoite thin films increases and their structures become more compact as post-annealing temperature increases. Combined with XRD data, the strong FTIR peaks and Raman bands assigned to Ti–O and Si–O vibration indicate the formation of fresnoite phase in the films at a temperature of 750 °C. Besides, the AFM observation showed the films have a smooth surface, fine grains and dense structure.     

Growth of regular-shaped β-Ga2O3 nanorods by Ni2+-ion-catalyzed chemical vapor deposition

Regular-shaped monoclinic β-Ga₂O₃ nanorods with square cross-sections were successfully synthesized and characterized by Ni²⁺-ion-catalyzed chemical vapor deposition method using CaF₂ as a dispersant. The composition, crystal structure, morphology, and optical property were characterized in detail. X-ray diffraction data indicate that the product was a single monoclinic β-Ga₂O₃ phase with high purity. The regular-shaped nanorods had square cross-sections and an approximate size of 250 nm in diameter and 500–1,000 nm in length. A broad and strong emission band that ranged from 300 to 650 nm was observed with three bands centered at approximately 405 (blue), 467 (dark blue), and 520 nm (green). The growth mechanism of β-Ga₂O₃ nanorods was consistent with the vapor–solid growth mechanism.     

Preparation and hydrothermal annealing of pure metastable β-MnS thin films by chemical bath deposition (CBD)

Pure metastable β-MnS thin films have been deposited by chemical bath deposition (CBD) method and subsequently annealed in a Na₂S solution (denoted as hydrothermal annealing). The effects of preparative parameters and hydrothermal annealing on structure, morphology and optical property of the films have been investigated. Experimental results indicate that the crystalline β-MnS thin films can be prepared at a low concentration of Mn and S ions without using any organic chelator. The as-deposited β-MnS can be transformed to γ-phase MnS after the hydrothermal treatment in an autoclave at 200 °C for 1 h. The estimated E_g values are in the range of 3.15-3.18 eV.     

Preparation and properties of porous Ti–10Mo alloy by selective laser sintering

In this study, porous Ti–10Mo alloy was prepared from a mixture of titanium, molybdenum and epoxy resin powders by selective laser sintering preforming, debinding and sintering at 1200 °C under a pure argon atmosphere. The influence of sintering process on the porous, microstructural and mechanical properties of the porous alloy was discussed. The results indicate that the pore characteristic parameters and mechanical properties mainly depend on the holding time at 1200 °C, except that the maximum strain keeps at about 45%. The matrix microstructure is dominated by α phase with a small quantity of β phase at room temperature. As the holding time lengthens from 2 to 6 h, the average pore size and the porosity decrease from 180 to 50 μm and from 70 to 40%, respectively. Meanwhile, the Young's modulus and the compressive yield strength increase in the ranges of 10–20 GPa and 180–260 MPa, respectively. Both the porous structure and the mechanical properties of the porous Ti–10Mo alloy can be adjusted to match with those of natural bone.     

Mechanical properties of carbon nanotube–alumina nanocomposites synthesized by chemical vapor deposition and spark plasma sintering

Carbon nanotubes–alumina (CNT–Al₂O₃) nanocomposites with variable CNT content were directly synthesized by chemical vapor deposition (CVD). The as-grown CNT–Al₂O₃ mixture was densified by spark plasma sintering (SPS) at 1150 and 1450 °C. Vickers hardness of 9.98 GPa and fracture toughness of 4.7 MPam^1/2 were obtained for 7.39 wt.% CNT–Al₂O₃ nanocomposite. The addition of CNTs gives rise to 8.4% increase in hardness and 21.1% increase in toughness over that of the pure Al₂O₃. The optimum amount of CNTs is considered to be able to significantly enhance the mechanical property of ceramics in composites.     

Synthesis and characterization of Sn1Mg1−xO2 thin films fabricated by aero-sole assisted chemical vapor deposition

In order to achieve high conductivity and transmittance of transparent conducting oxide, Mg doped SnO₂ (Mg_xSn_1?xO₂) thin films have been fabricated and characterized to investigate their structural and optical properties. The Mg_xSn_1?xO₂ thin films have been deposited on glass substrate using aero-sole assisted chemical vapor deposition. The molar concentration of Mg contents was changed from 0 to 8 %. The confirmation of tetragonal structure and particle size (32–87 nm) of thin films was analyzed by X-ray diffraction. The surface roughness has been found to decrease with the increase of the dopant concentration as investigated by atomic force microscopy. The optical transmission increased from 54 to 78 % and the band gap of pure SnO₂ has been found to be 3.75 eV while it rises up to 3.88 eV with increasing Mg doping. The sheet resistance (R_s) of undoped SnO₂ is maximum which become lowest at 4 % Mg doped SnO₂.     

Metal-organic chemical vapor deposition of β-In2S3 thin films using a single-source approach

Dithioimidobisdiisopropylphosphinato indium chloride In[(SPⁱPr₂)₂N]₂Cl has been shown to be an effective single-source precursor for the deposition of indium sulfide films by aerosol-assisted chemical vapor deposition (AACVD). X-ray powder diffraction (XRPD) studies indicated that polycrystalline -In₂S₃ films with the tetragonal phase have been deposited on glass substrates (425–475 °C). The morphology of films was confirmed by scanning electron microscopy (SEM). Energy dispersive X-ray analysis (EDAX) indicates the presence of indium and sulfur.     

Characterization of β-Ga2O3 films deposited under different growth temperature by pulsed laser deposition

Journal of Materials Science: Materials in Electronics - A series of β-Ga2O3 films were prepared on polished Al2O3 substrates by pulsed laser deposition at temperatures between 580 and 780...     

Preparation and characterization of α-Fe2O3 nanorod-thin film by metal-organic chemical vapor deposition

Alpha iron oxide (α-Fe₂O₃) films were grown on catalyst-free silicon substrate using a vertical type metal-organic chemical vapor deposition process. X-ray powder diffraction and field-emission transmission electron microscopy measurements showed that these α-Fe₂O₃ films consisted of bundles of one dimensional (1D) nanorods and the nanorods in these α-Fe₂O₃ films were single crystalline with a well-ordered rhombohedral structure. The nanorods showed a preferred growth orientation in the [104] direction. Magnetic force microscopy image suggests that spin domains were formed in the α-Fe₂O₃ nanorods. Photo-catalytic property of these nanorod films was confirmed through the photo-degradation of Rhodamine B by UV irradiation. These α-Fe₂O₃ film/nanorod materials could be used as building blocks for nanodevice applications.