Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates

GaN nanorods have been synthesized by ammoniating Ga₂O₃ films on a TiO₂ middle layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD analysis indicates that the crystallization of GaN film fabricated on TiO₂ middle layer is rather excellent. The FTIR, SEM and HRTEM demonstrate that these nanorods are hexagonal GaN and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 μm, the growth mechanism of crystalline GaN nanorods is discussed briefly.     

In3+-doped CuS thin films: physicochemical characteristics and photocatalytic property

Semiconducting Indium-doped copper sulfide thin films were deposited on glass substrate by a simple and economical chemical bath deposition technique. The depositions were carried out for 40 min. The electrical studies namely resistivity, resistance, and sheet resistance of CuS and CuS: In were carried out using four-point probe apparatus. The structural, optical, and morphological characterization were studied and compared with those of CuS: In with the bare CuS thin films. XRD studies confirmed that all the prepared thin films have the hexagonal structure of copper sulfide without any secondary phase after doping and the crystallite size was found to be decrease from 69 to 53 nm. Optical absorption analysis of samples shows a red-shift in the band edge of In: CuS thin films relative to CuS film so that the bandgap energy was decreased from 1.95 eV to 1.86 eV. The functional groups present in the CuS and In: CuS samples were confirmed by FTIR and FT-Raman frequency assignments. Morphological studies of CuS and CuS: In are interpreted using SEM and constituents present in the prepared thin films are viewed by EDS. Further the photocatalytic properties of the prepared films were studied by degrading methylene blue (MB) and rhodamine B (RhB) textile dyes. Maximum degradation efficiency achieved by the photocatalyst is to be 95% and 93% respectively for MB and RhB.

     

Room temperature H2S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) thick films

The study reports H₂S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) films. The porous alumina (PoAl) thick layers were formed in the dark on aluminum substrates using an electrochemical anodization method. Thin semitransparent platinum (Pt) films were deposited on PoAl samples using chemical bath deposition (CBD) method. The films were characterized using energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM). The thicknesses of coated and bare films were measured using ellipsometry. The sensing properties such as sensitivity factor (S.F.), response time, recovery time and repeatability were measured using a static gas sensing system for H₂S gas. The EDAX studies confirmed the purity of Pt–PoAl film and indicated the formation of pure platinum (Pt) phase. The ellipsometry studies revealed the thickness of PoAl layer of about 15–17 μm on aluminum substrates. The SEM studies demonstrated uniform distribution of spherical pores with a size between 0.250 and 0.500 μm for PoAl film and nearly spherical platinum particles with average particle size ∼100 nm for Pt–PoAl film. The gas-sensing properties of these samples were studied in a home-built static gas characterization system. The H₂S gas sensing properties of Pt–PoAl at 1000 ppm of H₂S gave maximum sensitivity factor (S.F.) = 1200. The response time and recovery time were found to be 2–3 min and ∼1 min respectively. Further, the measurement of H₂S gas sensing properties clearly indicated the repeatability of gas sensing response of Pt–PoAl film. The present study indicated the significant potential of Pt coated PoAl films for H₂S gas sensing applications in diverse areas.     

High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge

Microcrystalline silicon (μc-Si) and polycrystalline silicon (poly-Si) films are deposited by surface wave (SW) discharge at 2.45 GHz in H₂/SiH₄ gas. This high density SW plasma at relatively low pressures (4-60 Pa) enables strong dissociation of feedstock gas. The films deposited on substrate are investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The SW discharge in 10% SiH₄ at total pressure of ∼ 30 Pa gives μc-Si films on a substrate at 250 °C, at a fairly high deposition rate of 4-20 nm/s, with a crystalline volume fraction of 0.5-0.8 and a grain size of 10-40 nm. Furthermore, poly-Si film with crystalline volume fraction of > 99% is deposited at higher substrate temperature (400 °C) in 2% SiH₄ discharge at lower pressure (4 Pa). X-ray diffraction and SEM results revealed that the grain size of poly-Si films is as large as 600 nm, which is almost 6 times larger than previously reported values.     

Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition

The smooth ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapor deposition (MWCVD) using argon-rich CH₄/H₂/Ar plasmas with varying argon concentration from 96% to 98% and negative bias voltage from 0 to −150 V. The influences of argon concentration and negative bias voltage on the microstructure, morphology and phase composition of the deposited UNCD films are investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), atom force microscopy (AFM), and visible and UV Raman spectroscopy. It was found that the introduction of argon in the plasma caused the grain size and surface roughness decrease. The RMS surface roughness of 9.6 nm (10 micron square area) and grain size of about 5.7 nm of smooth UNCD films were achieved on Si(100) substrate. Detailed experimental results and mechanisms for UNCD film deposition in argon-based plasma are discussed. The deposited highly smooth UNCD film is also expected to be applicable in medical implants, surface acoustic wave (SAW) devices and micro-electromechanical systems (MEMS).     

Electroless deposition of the copper sulfide coating on polyacrylonitrile with a chelating agent of triethanolamine and its EMI Shielding Effectiveness

In this study, an effective deposition of CuS on PAN film was proposed by an electroless plating method with the reduction agents NaHSO₃ and Na₂S₂O₃·5H₂O and a chelating agent (triethanolamine, TEA). A variety of concentrations of TEA were added to obtain the anchoring effect and chelating effect in the electroless plating bath. The GIA-XRD and laser Raman analysis indicated that the deposited layer consisted of CuS. The mechanism of the copper sulfide (CuS) growth and the electromagnetic interference shielding effectiveness (EMI SE) of the composite were studied. It was found that the vinyl acetate remained in PAN substrate would be purged due to the swelling effect by TEA solution. Then the anchoring effect occurred due to the hydrogen bonding between the pits of PAN substrate and TEA. Consequently, the copper sulfide layer was deposited effectively by the electroless plating reaction. The swelling degree (S_d) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN composite and TEA concentration (C) is expressed as: S_d = 0.07 + 1.00 × e^(− 15.15C). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 247 nm when the concentration of TEA increased from 0.00 M to 0.60 M. As a result, the EMI SE of the composites increased from 10-12 dB to 25-27 dB.     

Low-temperature synthesis of CuS nanorods by simple wet chemical method

CuS nanorods of length 60–100 nm and 15 nm in diameter have been synthesized by simple wet chemical method at 105 °C using CuCl₂·2H₂O as Cu-precursor, CS₂ as S-source and ethylenediamine as the attacking reagent. The plausible reaction mechanism has been proposed and the effect of reaction temperature on morphology has been discussed. X-ray diffraction (XRD) pattern suggests the formation of hexagonal phase CuS. The morphology of the products has been studied by transmission electron microscope (TEM) analysis. A detailed optical study has also been done.     

Deposition of diamond-like carbon films on the inner surface of narrow stainless steel tubes

Diamond-like carbon (DLC) films were deposited on the inner surface of 304-type stainless steel tube with an inner diameter of 10 mm by DC glow discharge plasma. The influence of the deposition time, pressure and the ratios of CH₄ in CH₄/Ar gas mixture on the DLC film deposition were investigated. The images of Scanning Electron Microscopy (SEM) show that the DLC films are featureless and free of porosity. Fibre-like structure was recognized on the film surface by Atomic Force Microscopy (AFM). The film deposition rate decreases with increasing the deposition time. Relative higher deposition rate (40 nm/min) can be obtained at 20-30 Pa, higher and lower pressure will significantly decrease the deposition rate. Raman spectrum analysis shows that the films deposited in 30 min at 20-30 Pa have more sp³ content. The corrosion resistance of the films was measured by potentiodynamic polarization test. The DLC films deposited on the inner surface of the 304-type stainless steel tube significantly improve its corrosion resistance.     

Effect of silane flow rate on structural,electrical and optical properties of silicon thin films grown by VHF PECVD technique

Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10⁻⁴ Ω⁻¹ cm⁻¹.     

Synthesis of size-tunable ZnO nanorod arrays from NH3·H2O/ZnNO3 solutions

Well-aligned crystalline ZnO nanorod arrays were fabricated via an aqueous solution route with zinc nitrate and ammonia as precursors. Dip-coating was firstly utilized to form a ZnO film on ITO substrate as a seed layer for subsequent growth of ZnO nanorods. The effects of NH₃·H₂O/ZnNO₃ molar ratio, ZnNO₃ concentration, growth temperature and time on nanorod morphology were respectively investigated. It was found that the size of nanorod is mainly determined by the molar ratio and concentration. XRD demonstrates that ZnO nanorods are wurtzite crystal structures preferentially orienting in the direction of the c-axis. SEM confirms that ZnO nanorods grew up perpendicular to the substrate. The diameter and length were tunable in a broad range from 80 nm to 500 nm and 250 nm up to 8 μm, respectively. The aspect ratio changed from 3 to 17 mainly dependent on composition of the aqueous solution.     

A heterostructured SnO2–TiO2 thin film prepared by Langmuir–Blodgett technique

SnO₂–TiO₂ heterostructure films were prepared through Langmuir–Blodgett (LB) route. LB films of octadecyl amine (ODA)–titanyl oxalate multilayer deposited on Si (100) and decomposed at 600 °C showed rutile and anatase phases of ultrathin TiO₂ film. Subsequently, multilayer LB film of ODA–stannate deposited on the pre deposited TiO₂ film after decomposition at 600 °C resulted in thin SnO₂ films on the TiO₂ thin film. The phase analysis of the SnO₂–TiO₂ film showed cassiterite phase of SnO₂ as well as the rutile/anatase mixture of TiO₂ indicating a SnO₂–TiO₂ heterostructured film. Surface morphology of the pure TiO₂ film and SnO₂–TiO₂ film were analyzed by using AFM. Electrical characterization by AC impedance analysis suggested SnO₂–TiO₂ heterostructure formation. DC current voltage measurement showed increase in photocurrent indicating visible light absorption and efficient charge separation under the sunlight type radiation.     

Solar cells with Sb2S3 absorber films

CdS/Sb₂S₃/PbS structures were prepared by sequential chemical deposition of CdS, Sb₂S₃ and PbS thin films on TEC-8 (Pilkington) transparent electrically conductive SnO₂ (TCO) coatings. CdS thin films (100 nm) were deposited with hexagonal structure from Cd-citrate bath and of cubic structure from Cd-ammine/triethanolamine bath. Sb₂S₃ thin films were deposited at 40 °C from a solution mixture of potassium antimony tartrate, triethanolamine, ammonia and thioacetamide(TA) or at 1 to 10 °C from a mixture of antimony trichloride and thiosulfate (TS). These films were made photoconductive by heating at temperatures 250 to 300 °C. When heated in the presence of a chemically deposited Se thin film of 300 nm, a solid solution Sb₂S_1.8Se_1.2 resulted. PbS thin films of 100-200 nm thickness were deposited on the TCO/CdS/Sb₂S₃ or TCO/CdS/Sb₂S_1.8Se_1.2 structure. Graphite paint was applied on the PbS film prior to applying a silver epoxy paint. The cell structures were of area 0.4 cm². The best results reported here is for a cell: TCO/CdS(hex-100 nm)/Sb₂S₃(TS-100 nm)/PbS(200 nm) with open circuit voltage (V_oc) 640 mV, short circuit current density 3.73 mA/cm², fill factor 0.29, and conversion efficiency 0.7% under 1000 Wm^− 2 sunlight. Four series-connected cells of area 1 cm² each gave V_oc of 2 V and short circuit current of 1.15 mA.     

Controlled synthesis of spherical CuS hierarchical structures

Spherical CuS hierarchical structures organized by nanoparticles were synthesized by the reaction of CuCl₂·2H₂O and sodium O-isopropyldithiocarbonate (xanthate, C₃H₇OCSSNa) in N,N-dimethylformamide (DMF) at 70 °C for 12 h. The product was characterized by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM and TEM). The result shows that the hierarchical CuS spheres were of 300-500 nm and aggregated by numerous particles with an average diameter of about 10 nm. A possible mechanism for the formation of CuS hierarchical structures is proposed, and an optical study has also been carried out.     

Sb2S3:C/CdS p-n junction by laser irradiation

In this paper, we report laser irradiated carbon doping of Sb₂S₃ thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb₂S₃ thin films of approximately 0.5 μm in thickness. Sb₂S₃ thin films were prepared from a solution containing SbCl₃ and Na₂S₂O₃ at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb₂S₃ thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb₂ S₃:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb₂S₃:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl₂, sodium citrate, NH₄OH and thiourea at 70 °C. On the CdS film, Sb₂S₃/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb₂S₃ side facing the beam. The p-n junction formed by p-Sb₂S₃:C and n-type CdS showed V_oc = 500 mV and J_sc = 0.5 mA/cm² under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.     

Cobalt ferrite dispersion in organic solvents for electrophoretic deposition: Influence of suspension parameters on the film microstructure

An electrophoretic deposition (EPD) method was applied for the preparation of CoFe₂O₄ (CFO) films on Al₂O₃/Pt substrates. A coprecipitation process was used to synthesize fine CFO powders with an average particle size of ∼40 nm. Influences of suspension parameters such as solvents, iodine additive, and charged polymer on the suspension stability and film microstructure were investigated in detail. Three suspensions including CFO–acetylacetone, CFO–acetylacetone–0.08 wt% I₂ and CFO–acetylacetone–0.2 wt% polyethylenimine (PEI) were optimized, respectively. It was found that CFO was deposited uniformly and the potential required for the deposition was small for the three optimized suspensions. After sintering at 1250 °C for 2 h, the film from CFO–acetylacetone–0.08 wt% I₂ showed many cracks, which indicates this suspension is not suitable for preparing high quality CFO ceramic films. While the sintered films fabricated from the other two optimized suspensions exhibited dense structures. Based on the electric and magnetic properties of CFO ceramic films, it can be concluded that CFO–acetylacetone–0.2 wt% PEI is the proper suspension to prepare films with better microstructures and properties.     

Synthesis and characterizations of CdS nanorods by SILAR method: effect of film thickness

In this investigation, we have successfully synthesized CdS nanorods by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on the physico-chemical properties such as structural, morphological, wettability, optical, and electrical properties of CdS nanorods has been investigated. The XRD pattern revealed that CdS films are polycrystalline with hexagonal crystal structure. SEM and TEM images showed that CdS film surface are composed of spherical grains along with some spongy cluster and an increase in film thickness up to 1.23 μm causes the formation of matured nanorods having diameter 150–200 nm. The increases in water contact angle form 105° to 130° have been observed as film thickness increases from 0.13 to 1.23 μm indicating hydrophobic nature. The optical band gap was found to be increased from 2.02 to 2.2 eV with increase in film thickness. The films showed the semiconducting behavior with room temperature electrical resistivity in the range of 10⁴–10⁶ Ω cm and have n-type electrical conductivity.     

The effect of seed layer thickness on alignment and morphology of ZnO nanorods

Thin films of ZnO of 20, 40,160 and 320 nm thickness were deposited on Si (100) substrates by rf-magnetron sputtering and then nanorods were grown on the seed layer at 95 °C for 2 h. The ZnO nanorods were synthesized in C₆H₁₂N₄ and Zn (NO₃)₂·6H₂O solution by a hydrothermal method and the effect of seed layer thickness on the alignment, diameter, density and growth rate of nanorods was studied.The results revealed that the alignment of nanorods depended on crystallinity, grain size and roughness frequency of the sputtered seed layer, so that, with increase of seed layer thickness, crystallinity improved. In addition the grain size increased and the roughness frequency decreased and hence alignment and diameter of nanorods increased.Finally, we present a model for the effect of seed layer thickness on the alignment and diameter of the nanorods.     

Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization

Laser crystallization of amorphous silicon (a-Si), using a fiber laser of λ = 1064 nm wavelength, was investigated. a-Si films with 50 nm thickness deposited on glass were prepared by a plasma enhanced chemical vapor deposition. The infrared fundamental wave (λ = 1064 nm) is not absorbed by amorphous silicon (a-Si) films. Thus, different types of capping layers (a-CeO_x, a-SiN_x, and a-SiO_x) with a desired refractive index, n and thickness, d were deposited on the a-Si surface. Crystallization was a function of laser energy density, and was performed using a fiber laser. The structural properties of the crystallized films were measured via Raman spectra, a scanning electron microscope (SEM), and an atomic force microscope (AFM). The relationship between film transmittance and crystallinity was discussed. As the laser energy density increased from 10-40 W, crystallinity increased from 0-90%. However, the higher laser density adversely affected surface roughness and uniformity of the grain size. We found that favorable crystallization and uniformity could be accomplished at the lower energy density of 30 W with a-SiO_x as the capping layer.     

Cu2O nanorod thin films prepared by CBD method with CTAB: Substrate effect,deposition mechanism and photoelectrochemical properties

Cuprous oxide (Cu₂O) films with different nanostructures are deposited on different substrates of fluorine-doped SnO₂ (FTO) glass, Cu and Ti foil respectively by using chemical bath deposition (CBD) technique with the presence of cetyltrimethylammonium bromide (CTAB). The samples are characterized by X-ray diffractmeter, scanning electron microscopy and UV–vis diffuse reflectance spectroscopy. The results show that the prepared Cu₂O films are composed of nanorod arrays when there is CTAB in reaction system. Without CTAB, Cu₂O films with nanospheres are formed. The concentration of CTAB is crucial for the controllable synthesis of nanorod structured Cu₂O films with different length to diameter ratio and nanorod array density is dependent on both substrates and CTAB. A possible mechanism for the formation of Cu₂O nanorods is discussed. Additionally, the UV–vis absorption property for Cu₂O nanorods is much better than that for nanospheres. The photovoltage produced under visible light for Cu₂O nanorod films is higher than that for the nanospheres. Although Cu₂O nanorods on Ti foil can absorb the most visible light, those on Cu foil demonstrate better and more stable photoelectrochemical property than those on any other substrates. This study may be extremely useful for Cu₂O based device with nanostructures.     

The effect of seed layer thickness on alignment and morphology of ZnO nanorods

Thin films of ZnO of 20, 40,160 and 320 nm thickness were deposited on Si (100) substrates by rf-magnetron sputtering and then nanorods were grown on the seed layer at 95 °C for 2 h. The ZnO nanorods were synthesized in C₆H₁₂N₄ and Zn (NO₃)₂·6H₂O solution by a hydrothermal method and the effect of seed layer thickness on the alignment, diameter, density and growth rate of nanorods was studied.The results revealed that the alignment of nanorods depended on crystallinity, grain size and roughness frequency of the sputtered seed layer, so that, with increase of seed layer thickness, crystallinity improved. In addition the grain size increased and the roughness frequency decreased and hence alignment and diameter of nanorods increased.Finally, we present a model for the effect of seed layer thickness on the alignment and diameter of the nanorods.