Low temperature sputter deposition of SnOx:Sb films for transparent conducting oxide applications

SnO_x:Sb films have been prepared by reactive dc magnetron sputtering from a metallic target, with the aim of evaluating the potential of SnO_x:Sb as an attractive low-cost alternative to In₂O₃:Sn (ITO) for TCO applications. The deposition was performed without any additional heating of the substrates. The films were subsequently analysed regarding their optical, electrical and structural properties. Our results show that there is only a narrow process window for the sputter deposition of transparent and conducting tin oxide films at low temperature. A sharp minimum in resistivity of 4.9 mΩ cm is observed at an oxygen content of approximately 17% in the sputtering gas. Under these deposition conditions, the SnO₂:Sb films turn out to be both highly transparent and crystalline. At lower oxygen content (10-15%) the SnO_x:Sb films are substoichiometric, as revealed by Rutherford backscattering, and show a low transmission and high resistivity due to numerous defects and the presence of the SnO phase. At higher oxygen content (> 17%) excess oxygen is incorporated into the films, which is attributed to an increase of oxygen ion bombardment. This leads to a degradation of the electrical properties and a decrease of the density of the films, whilst the optical transmittance slightly improves.     

Plasma electrolytic oxidation preparation and characterization of SnO2 film

SnO₂ film is firstly prepared by plasma electrolytic oxidation technology in sodium stannate solution. The structure and photocatalytic property of the film are characterized by SEM, XRD and UV-Vis spectrophotometer. Rough and porous netlike film formed on the substrate. The XRD result showed the oxide was pure SnO₂. The absorption edge of the film was determined as 420 nm. Photocatalytic degradation of rhodamine indicated SnO₂ film was an effective photocatalyst.     

SnO2@TiO2核-壳纳米线的制备及其光催化性能研究

本文通过固-液-气(VLS)生长机制,利用化学气相沉积法(CVD)制备SnO₂纳米线。利用原子层沉积(ALD)以钛酸四异丙酯为前驱体在SnO₂纳米线表面沉积不同厚度的TiO₂壳层,形成SnO₂@TiO₂核-壳纳米线结构。通过中间Al₂O₃插层,分别制备出金红石和锐钛矿两种不同晶型的TiO₂,从而制备出两种不同复合结构的SnO₂@TiO₂核-壳纳米线。实验研究该复合结构中TiO₂的厚度与晶型对紫外光下光催化降解甲基橙溶液活性的影响。     

SnO2 增强相对AgCuOIn2O3 电触头材料显微组织与性能的影响

采用反应合成法结合塑性变形工艺制备了不同SnO₂含量的AgCuOIn₂O₃SnO₂电触头材料,利用扫描电镜和金相显微镜表征了材料的微观形貌及显微组织,分析对比了不同SnO₂含量的材料金相组织及其增强相的分布均匀性,并利用X射线衍射分析了材料的物相结构。测量了材料的抗拉伸强度、硬度、电阻等性能。结果表明：添加适量的SnO₂能使组织中的孔隙尺寸缩小、其他缺陷明显减少。氧化物弥散分布在银基体中,极大地改善了AgCuOIn₂O₃电触头材料的显微组织均匀性。在SnO₂含量不变时,材料的电阻率随塑性变形程度增加而有所降低;随着SnO₂含量增多,电阻率呈现先降低后升高的趋势,最后趋于定值,约为2.4 μΩ·cm。添加SnO₂后各试样材料的硬度均显著升高,SnO₂含量为1%（质量分数）的材料具有最优的抗拉伸强度和延伸率。     

Spectroscopic and crystal-field analysis of energy levels of Eu in SnO2 in comparison with ZrO2 and TiO2

We have carried out systematic crystal-field energy level calculations of Eu³⁺ ions doped in SnO₂ based on experimentally acquired luminescence spectra. In addition, with an aim of revealing systematic trends in spectra and crystal-field effects for Eu³⁺ ion in similar hosts, we have analyzed the TiO₂ (anatase):Eu³⁺ spectra as well. The obtained crystal-field parameters yield very good agreement between the calculated and observed energy levels. Emphasis has been put on analysis of the crystal-field-induced J-mixing effects and their roles in getting proper sets of crystal-field parameters and energy levels. A more general theory concerning J-mixing effects has been proposed and the relevant results will be valuable to understanding of the spectral characteristics of Eu³⁺ f-f transition spectra in other hosts. Relations between the maximum crystal-field splitting of some selected J-manifolds with J = 1 and J = 2 and crystal-field invariants have been re-visited and re-derived. The corresponding numbers of crystal-field parameters influencing the splitting of these manifolds have been taken into account in every case. The derived equations have been tested in applications to three systems (SnO₂, TiO₂ (three sites) and ZrO₂). Consistent results have been obtained, which confirms validity of the performed crystal-field analysis and opens a way for possible applications of the suggested calculating technique to other rare-earth ions.     

SnO2 dendrites-nanowires for optoelectronic and gas sensing applications

SnO₂ dendrites-nanowires were grown on Au coated Si substrates using evaporation condensation method. The morphology, structural, chemical composition and thermal analysis were examined using scanning electron microscopy, X-ray diffraction, energy dispersive analysis of X-ray and Fourier transformation infrared spectroscopy, and thermal gravimetric analysis, respectively. The optical constants, the thickness and the surface roughness of the prepared nanostructured films were determined by spectroscopic ellipsometry measurements. A three layers model was used to fit the calculated data to the experimental ellipsometric spectra. The obtained optical constants were compared with those obtained by other preparation methods. The sensing properties of the obtained SnO₂ nanostructure were carried out for NO₂ gas. The optimal operation temperature was 200 °C and the sensor sensitivity was 40, 56, 83 and 121 for 10, 15, 25 and 50 ppm, respectively.     

Ag/SnO2电接触材料的制备及其燃弧特性研究

以Ag粉和自制SnO_2为原料,采用机械合金化和热挤压拉拔工艺制备Ag/SnO_2电接触材料。采用冷压焊工艺设备制备了Ag/SnO_2铆钉元件。采用X射线衍射仪(XRD)对Ag粉、自制SnO_2及Ag/SnO_2复合粉体进行物相分析;采用扫描电子显微镜(SEM)对电寿命测试前后Ag/SnO_2铆钉元件的表面形貌进行了表征。并考察了不同电气参数对Ag/SnO_2铆钉元件的燃弧特性、电弧侵蚀形貌、质量损失及其失效退化模式等特性研究。结果表明:Ag/SnO_2电接触材料在电弧作用下相比于纯Ag表现出更高的燃弧时间和燃弧能量,平均闭合与断开燃弧时间分别为51.78和25.86 ms,比纯Ag多出4.87和2.78 ms;同理,平均闭合、断开燃弧能量分别为988.14和493.85 mJ,比纯Ag高出104.93和58.76mJ;随着循环操作次数的增加,Ag/SnO_2电接触材料的总质量损失为负值,其失效退化模式主要表现为液滴飞溅与SnO_2颗粒上浮。     

MeO掺杂AgSnO2电接触材料的结构与性能

采用机械合金化技术将不同用量的CuO或Fe_2O_3粉掺入银和SnO_2粉中制备Ag/SnO_2(x)-MeO(y)复合粉体,并辅以热压成型工艺制得Ag/SnO_2(x)-MeO(y)电接触材料。采用扫描电镜、X射线衍射仪、电阻测试仪、硬度计及拉伸试验机等测试仪器对材料的组织结构、物理和力学性能进行了表征。结果表明:随着掺杂剂用量的增加,Ag/SnO_2(x)-MeO(y)材料的密度逐渐降低,且CuO较Fe_2O_3更利于提高材料的导电性。2种掺杂剂均能显著改善Ag/SnO_2(x)-MeO(y)材料的塑性变形能力。Ag/SnO_2(11.2%)-CuO(0.8%)(也即CuO用量为0.8%)材料的电阻率达到最低值2.35μΩ·cm,延伸率约为9.1%,比Ag/SnO_2材料的延伸率提高近93.6%,综合性能最优。     

On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures

The structural and optical properties of CdS films deposited by evaporation were investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. The study has been made on the behavior of Cu/n-CdS thin film junction on SnO₂ coated glass substrate grown using thermal evaporation method. The forward bias current-voltage (I-V) characteristics of Cu/CdS/SnO₂/In-Ga structures have been investigated in the temperature range of 130-325 K. The semi-logarithmic lnI-V characteristics based on the Thermionic emission (TE) mechanism showed a decrease in the ideality factor (n) and an increase in the zero-bias barrier height (Φ_Bo) with the increasing temperature. The values of n and Φ_Bo change from 8.98 and 0.29 eV (at 130 K) to 3.42 and 0.72 eV (at 325 K), respectively. The conventional Richardson plot of the ln(I_o/T²) vs q/kT shows nonlinear behavior. The forward bias current I is found to be proportional to I_o(T)exp(AV), where A is the slope of ln(I)-V plot and almost independent of the applied bias voltage and temperature, and I_o(T) is relatively a weak function of temperature. These results indicate that the mechanism of charge transport in the SnO₂/CdS/Cu structure in the whole temperature range is performed by tunneling among interface states/traps or dislocations intersecting the space-charge region. In addition, voltage dependent values of resistance (R_i) were obtained from forward and reverse bias I-V characteristics by using Ohm's law for each temperature level.     

Structural,electrical and optical properties of p-type transparent conducting SnO2:Al film derived from thermal diffusion of Al/SnO2/Al multilayer thin films

Highly transparent, p-type conducting SnO₂:Al films derived from thermal diffusion of a sandwich structure Al/SnO₂/Al multilayer thin films deposited on quartz substrate have been prepared by direct current and radio-frequency magnetron sputtering using Al and SnO₂ targets. The deposited films were annealed at various temperatures for different durations. The effect of thermal diffusing temperature and time on the structural, electrical and optical performances of SnO₂:Al films has been studied. X-ray diffraction results show that all p-type conducting films possessed polycrystalline SnO₂ with tetragonal rutile structure. Hall-effect results indicate that 450 °C for 4 h were the optimum annealing parameters for p-type SnO₂:Al films, resulting in a relatively high hole concentration of 7.2 × 10¹⁸ cm^?3 and a low resistivity of 0.81 Ω cm. The transmission of the p-type SnO₂:Al films was above 80%.     

碳纳米管修饰的空心多孔NiO/SnO2纳米复合材料对丙酮传感性能的优化

通过静电纺丝法制备中空多孔的NiO/SnO2复合纳米纤维,在复合纤维表面装饰碳纳米管,在此基础上制备气敏传感器器件.利用TGA确定了复合材料热分解温度和热处理工艺;利用SEM、XRD、TEM、XPS分别对复合材料的形貌、结构、尺寸、表面成分进行了表征.使用WS-30A气敏元件测试仪对气敏元件响应进行了测试.结果 表明,...     

Novel SnO2/MnO co-doped phosphate glasses with tunable luminescence properties

In the present work, novel SnO₂/MnO co-doped phosphate glasses are prepared and their tunable luminescence properties are presented. Under excitation at 267 nm, all co-doped glasses exhibit an assembly of SnO₂ blue emission at 420 nm and MnO red emission around 600 nm. With the increasing of MnO concentration, intensity of the SnO₂ blue emission decreases while that of MnO red emission increases. With the increasing of SnO₂ concentration, both SnO₂ and MnO emissions are greatly enhanced, resulting in the white light emitting.     

Growth of HT-LiCoO2 thin films on Pt-metalized silicon substrates

Layered LiCoO2 （HT-LiCoO2） films were grown on Pt-metalized silicon （PMS） substrates and polished bulk nickel （PBN） substrates by pulsed laser deposition. The effects of substrate temperature, oxygen pressure, and substrate surface roughness on the microstructure of LiCoO2 films were investigated. It has been found that a higher substrate temperature and a higher oxygen pressure favor the formation of better crystallized and less lithium-deficient HT-LiCoO2 films. The HT-LiCoO2 film deposited on PBN substrates consists of large randomly orientated equiaxial grains, whereas on PMS substrate, it is made up of loosely packed highly [001] preferential orientated triangular shaped grains with the average grain size less than 100 nm. Electrochemical measurements show that the highly [001] preferentially orientated nanostructured HT-LiCoO2 thin film grown on PMS substrate has good structural stability upon lithium insertion/extraction and can deliver an initial discharge capacity of approximately 45μA·h·cm^-2·μm^-1 with a cycling efficiency of above 99% at the charge/discharge rate of 0.5 C.     

Structural, optical and electrical properties of Mg-doped CuCrO2 thin films by sol-gel processing

CuCr_1−xMg_xO₂ (x = 0, 0.03, 0.05, 0.07) thin films were prepared on sapphire substrates by sol-gel processing. The effect of Mg concentrations on the structural, morphological, electrical and optical properties was investigated. Highly transparent ≧70% Mg-doped CuCrO₂ thin films with p-type conduction and semiconductor behavior were obtained. The microstructure of the systems was characterized by scanning electron microscopy and the roughness increased as the content of Mg increased. The photoluminescence spectra results indicated that it had a green luminescent emission peak at the 530 nm. In this paper, CuCr_0.95Mg_0.05O₂ film has the lowest resistivity of 7.34 Ω cm with direct band gap of 3.11 eV. In order to investigate the conduction mechanism, the energy band of the CuCrO₂ films is constructed based on the grain-boundary scattering.     

Nano-grain Al2O3 crystals grown by sputtering of aluminium on CoCrPt thin films for potential application in ultra-high-density recording media

Designing supraceramic assemblies based on Al₂O₃ has remained a challenge due to the problems associated with the suitable dispersion in neat compounds and ability to control the preferred orientation in a unique fashion. Herein, granular HCP-(CoCrPt)_100−X(Al₂O₃)_X (X represents the percent weight) thin films with Si(1 0 0) substrates have been fabricated using sputtering technique followed by annealing treatment. Structural and magnetic properties of thin film have been investigated for potential application in magnetic recording media. It was shown that coercivity increased from 0.5 to 2.5 kOe by increasing the nano-grain Al₂O₃ content in the CoCrPt magnetic layers. In CoCrPt-Al₂O₃ thin films coercivity of 2.5 kOe has been obtained with increasing the Al₂O₃ content from 3 to 13 wt.% in the annealed thin films. The structural properties of the samples were studied using X-ray diffraction (XRD) and transmission electron microscope (TEM) equipped with selected area electron diffraction (SAED). The magnetic properties of the samples were measured with a vibrating sample magnetometer (VSM). The VSM results showed that the HCP-CoCrPt-Al₂O₃ granular films are a promising candidate for ultra-high-density recording media because of its low Al₂O₃ content and simple manufacturing process.     

Structure differences between TiO2 and phosphorus implanted TiO2 films caused by thermal treatment

The titanium oxide film has been deposited on Si wafers (110) by unbalance reactive magnetron sputtering and modified by phosphorus ion implantation and succeeding vacuum annealing. The structural, states of surface chemistry and surface morphology of the films have been investigated by X-ray diffraction (XRD), X-ray photoelectric spectroscopy (XPS), atomic force microscope (AFM) and Scanning Electron Microscope (SEM), respectively. The results of XRD show rutile structure of as-deposited film, which is not changed by phosphorus implantation and vacuum annealing. However, a slightly shift of the peaks position to higher degree and the half width increases after ion implanted and vacuum annealing represent that the variety of the structure film caused by these treatments. The surface roughness is inclined to increase with the rising of annealing temperature for both undoped and P doped titanium oxide films. The surface chemistry presents significant difference between undoped and phosphorus doped films after a vacuum annealing, it may be attributed to the different evolvement of the surface defects existing in the film, which may be considered as an important influencing factor in the blood compatibility of the titanium oxide film.     

Thermal conductivity and thermal cycle life of La2O3 and HfO2 doped ZrO2-Y2O3 coatings produced by EB-PVD

The effects of La₂O₃ and HfO₂ addition on thermal conductivity and thermal cycle life of EB-PVD YSZ coatings were investigated. La₂O₃ and HfO₂ were selected as additives, because they significantly suppress the sintering of YSZ. The developed coating showed low thermal conductivity as well as high resistance to sintering. Burner rig tests confirmed that the developed coating have a superior thermal insulating effect and have a longer life than that of a coating with conventional composition.     

White light emission in Tm/Er/Yb tri-doped Y2O3 transparent ceramic

Tm³⁺/Er³⁺/Yb³⁺ triply doped Y₂O₃ transparent ceramics were fabricated by solid state reaction and characterized from the point of view of white light upconversion luminescence. All the samples exhibited high transparency not only in near-infrared band but also in visible region. Strong red (Er³⁺: ⁴F_9/2 → ⁴I_15/2), green (Er³⁺: ²H_11/2, ⁴S_3/2 → ⁴I_15/2) and blue (Tm³⁺: ¹G₄ → ³H₆) upconversion emissions have been observed under 980 nm excitation at room temperature. By varying the concentration of Er³⁺ ion, various colors of upconversion luminescence (pure blue, bluish green, pure green and yellowish green), including white light with CIE-X = 0.295 and CIE-Y = 0.312, can be easily achieved.     

Synthesis and thermal conductivities of ZnIn2Te4 and CdIn2Te4 with defect-chalcopyrite structure

ZnIn₂Te₄ and CdIn₂Te₄ have a defect-chalcopyrite tetragonal crystal structure with structural vacancies. In order to investigate the effects of vacancies on the lattice thermal conductivity (κ_lat), single phase samples of ZnIn₂Te₄ and CdIn₂Te₄ were synthesized and their κ_lat values were examined in the temperature range from room temperature to 850 K. The κ_lat data for ZnIn₂Te₄ and CdIn₂Te₄ were compared with those of Zn- and Cd-series chalcopyrite compounds with no vacancies. The results revealed that the presence of vacancies alone in the defect-chalcopyrite structure does not result in effective phonon scattering.