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1.
Two concurrent dual-band low-noise amplifiers (LNAs) for GNSS applications are presented. They adopted resistive load and LC resonator load, respectively. On-chip circuits are used for biasing the main amplifiers and active baluns are used for single-ended-to-differential conversions. Using the power-constrained simultaneous input and noise matching technique, the LNAs achieve input matching and noise optimization simultaneously at two bands. Implemented in SMIC 0.18 μm CMOS process, both LNAs consume less than 8 mA dc current with a power supply voltage of 1.8 V. The proposed LNA with resistive load exhibits measured gains of 13 and 11.5 dB, and noise figures of 1.58 and 3.1 dB at 1.217 and 1.568 GHz, respectively. The LC load LNA has measured gains of 16 and 14.8 dB, and noise figures of 2.2 and 2.35 dB at 1.217 and 1.568 GHz, respectively. 相似文献
2.
A 1.34 GHz60 MHz low noise amplifier (LNA) designed in a 0.35 m SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IP1dB) of ?11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply. 相似文献
3.
Xiaolong Li Yubo Tian Zhibin Xie Zhenkai Zhang Biao Wang Bing Zhang 《Journal of Communications Technology and Electronics》2014,59(11):1298-1302
A noise current feedforward (NCF) technique for noise cancellation in the wideband transformer shunt feedback (TSF) low noise amplifier (LNA) is proposed. The NCF can detect and cancel the thermal noise of the TSF network. It is also suitable to cancel those noise contributed by the passive unilateral shunt feedback networks in common current mode LNAs. Implemented in SMIC 0.18 μm CMOS process and operated in the typical radio astronomy frequency range from 0.6 GHz to 1.6 GHz, the TSF LNA that employs the NCF shows approximately 0.2–0.5 dB lower noise figure than the overwhelming resistive shunt feedback LNA that exploits a conventional noise voltage feedforward technique when consuming the same power. 相似文献
4.
A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IPldn) of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply. 相似文献
5.
《Microwave and Wireless Components Letters, IEEE》2006,16(9):517-519
We demonstrate a low dc power consumption SiGe heterojunction bipolar transistor (HBT) low noise amplifier (LNA) for ultra-wideband (UWB) applications covering the 0.5GHz to 10GHz band. Using theoretical analysis, the dominant design factor for low group delay variation is identified and applied to UWB LNA design. The implemented SiGe LNA achieves a gain of 13dB, a minimum noise figure of 3.3dB, and an IIP3 of$-$ 7.5dBm between 0.5GHz and 10GHz, while consuming a dc power of only 9.6mW. This SiGe UWB LNA exhibits less than 22ps of uniform group delay variation over the entire band. To the best of the authors' knowledge, this is the first attempt to analyze the effects of group delay variation on the operation of wideband LNAs. 相似文献
6.
Barras D. Ellinger F. Jackel H. Hirt W. 《Microwave and Wireless Components Letters, IEEE》2004,14(10):469-471
A low-power low-noise amplifier (LNA) for ultra-wideband (UWB) radio systems is presented. The microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.25-/spl mu/m silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier uses peaking and feedback techniques to optimize its gain, bandwidth and impedance matching. It operates from 3.4 to 6.9GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10dB and a noise figure less than 5dB over the entire bandwidth. The circuit consumes only 3.5mW using a 1-V supply voltage. A figure of merit (FoM) for LNAs considering bandwidth, gain, noise, power consumption, and technology is proposed. The realized LNA circuit is compared with other recently published low-power LNA designs and shows the highest reported FoM. 相似文献
7.
8.
Jeng-Han Tsai Wei-Chien Chen To-Po Wang Tian-Wei Huang Huei Wang 《Microwave and Wireless Components Letters, IEEE》2006,16(6):327-329
A miniature Q-band low noise amplifier (LNA) using 0.13-/spl mu/m standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm/sup 2/. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size. 相似文献
9.
Kyung-Wan Yu Yin-Lung Lu Da-Chiang Chang Liang V. Chang M.F. 《Microwave and Wireless Components Letters, IEEE》2004,14(3):106-108
Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 /spl mu/m CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is >+2 dBm for both LNAs with a current consumption of 30 mA from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process. 相似文献
10.
Jaemin Shim 《International Journal of Electronics》2013,100(10):1609-1620
This paper presents the design of a 2.5/3.5-GHz dual-band low-power and low-noise CMOS amplifier (LNA), which uses the capacitor cross-coupling technique and current-reuse method with four switches. The proposed LNA uses a single RF block and a broadband input stage, which is a key aspect for the easy reconfiguration of a dual-band LNA. Switching at the inter-stage and output allows for the selection of a different standard. The dual-band LNA attenuates the undesired interference of a broadband gain response circuit, which allows the linearity of the amplifier to be improved. The capacitor cross-coupled gm-boosting method improves the NF and reduces the current consumption. The proposed LNA employs a current-reused structure to decrease the total power consumption. The inter-stage and output switched resonators switch the LNA between the 2.5-GHz and 3.5-GHz bands. The proposed dual-band LNA optimises power consumption by the securing gain, noise figure and linearity. The simulated performance reveals gains of 16.7 dB and 19.6 dB, and noise figures of 3.04 dB and 2.63 dB at the two frequency bands, respectively. The linearity parameters of IIP3 are ?5.7 dBm at 2.5 GHz and ?9.7 dBm at 3.5 GHz. The proposed dual-band LNA consumes 5.6 mW from a 1.8 V power supply. 相似文献
11.
《Electronics letters》2007,43(20):1096-1098
A CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5 GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4 GHz WLAN band. Measurement shows a peak gain of 19.7 dB in the low band (3-5 GHz) and 20.3 dB in the high band (6-10 GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8 dB, respectively. 相似文献
12.
ESD-Protected Wideband CMOS LNAs Using Modified Resistive Feedback Techniques With Chip-on-Board Packaging 总被引:1,自引:0,他引:1
《Microwave Theory and Techniques》2008,56(8):1817-1826
13.
Mou Shouxian Ma Jian-Guo Yeo Kiat Seng Do Manh Anh 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2005,52(11):784-788
An architecture used for input matching in CMOS low-noise amplifiers (LNAs) is investigated in this paper. In the proposed architecture, gate and source inductors, which are essential in the traditional source inductive degeneration CMOS LNAs, are either reduced or removed. The architecture is finally verified by a narrow-band LNA and a wide-band LNA operating at 2.4-2.5 and 5.1-5.9 GHz, respectively. The narrow-band LNA has measured power gain of 24-dB, noise figure (NF) of 2.6-2.8 dB, and power consumption of 15 mW. The wide-band LNA provides 22.6-24.6-dB power gain and 2.85-3.5-dB NF while drawing 6 mA current from a 1.5-V voltage supply. Compared with their traditional counterparts, the proposed LNAs consume less chip area and present better gain performance. 相似文献
14.
This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed.The relevant parameter analysis and the details of circuit design are presented.The test chip was implemented in a TSMC 0.18μm 1P4M RF CMOS process.The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz.The measured noise figure is around 1.5-1.7 dB on both bands.The LNA consumes less than 4.3 mA of current ... 相似文献
15.
Won-tae Lee Jaehoon Lee Jichai Jeong 《Analog Integrated Circuits and Signal Processing》2011,68(1):43-50
This paper presents a novel adaptive gain control method for Low Noise Amplifiers (LNAs) at the 5.2 GHz band using a feedback
circuit, and operating in the baseband signal frequency. A uniform step variable gain can be implemented using a two-stage
LNA based on the cascade topology. The feedback circuit consists of seven functional blocks, each of which has been designed
for minimum power consumption. The storage circuit in the feedback circuit is used to store the previous signal magnitude,
thus avoiding unnecessary power consumption in the LNA. We simulated the performances of LNA in terms of the gain, IIP3, Noise
Figure (NF), stability, and power consumption. The adaptive front-end LNA with the feedback circuit can achieve a variable
gain from 11.39 dB to 22.74 dB with excellent noise performance even at a high gain mode. The DC power of the proposed variable
gain LNA consumes 5.68–6.75 mW under a 1.8 V supply voltage. 相似文献
16.
采用0.18μmCMOS工艺设计并制造了一款新型的应用于无线局域网的双频段低噪声放大器。设计中,通过切换输入电感和负载电感,来使电路分别工作在2.4GHz和5.2GHz频段。在1.8V的电源电压下,在2.4GHz和5.2GHz两个频段上,其增益分别达到了11.5dB和10.2dB,噪声系数分别是3dB和5.1dB。芯片总面积是0.9mm×0.65mm。 相似文献
17.
A dual band low-noise amplifier (LNA) with matched inputs and outputs, implemented in Infineon Technologies' B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 Ω without external elements. For the low-band (800 MHz-1 GHz), the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with a power supply voltage range from 2.7-3.6 V 相似文献
18.
Wang H. Ton T.-N. Tan K.L. Garske D.C. Dow G.S. Berenz J.B. Pospieszalski M.W. Pan S.-K. 《Solid-State Circuits, IEEE Journal of》1993,28(10):988-993
The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band 相似文献
19.
Highly Rugged 30 GHz GaN Low-Noise Amplifiers 总被引:1,自引:0,他引:1
Rudolph M. Chaturvedi N. Hirche K. Wurfl J. Heinrich W. Trankle G. 《Microwave and Wireless Components Letters, IEEE》2009,19(4):251-253
GaN low-noise amplifiers (LNAs) operating at 27-31 GHz are presented in this letter. The monolithically integrated LNAs were fabricated using the process line of the Ferdinand-Braun-Institut. Noise figures of 3.7 to 3.9 dB were measured. The ruggedness of the LNAs was verified by noise measurements after stressing the LNA for up to 2 h with up to 33 dBm of input power. These conditions are among the most severe stress tests reported in literature. To the best of the authors knowledge, this is the first demonstration of a GaN LNA in this frequency region. 相似文献
20.
Hsin-Ying Liang Cheng-Ying Yang Kuang-Hao Lin Chia-Hsin Cheng 《Wireless Personal Communications》2016,86(3):1359-1376
A new ultra-wideband common gate low noise amplifier (LNA) for 3–6 GHz WLAN and WPAN applications is presented in which a current reused noise canceling structure utilized in the first stage not only provides a suitable noise performance, but also enhances the linearity characteristics of the LNA in a power efficient manner needed by WLAN/WPAN applications. The overall structure of the proposed LNA, consisting of three stages, namely input matching common gate stage with noise canceling, gain stage, and buffer one, is designed, laid out, and analyzed in 0.18 µm RF CMOS process. The LNA has a noise figure of 3.5–3.6 dB, a high and flat power gain of 20.27 ± 0.13 dB, and input and output losses of better than ?11 and ?14 dB, respectively, over the entire frequency band of 3–5 GHz, while these parameters are 3.5 dB, 20.75 ± 0.25 dB, ?15 and ?9 dB for the frequency band of 5–6 GHz, respectively. IIP2 and IIP3 of the proposed topology are equal to 25.9 and ?1.85 dBm, respectively, at 4 GHz frequency. The proposed LNA has 15.3 mW power dissipation from a 1.8 V supply. 相似文献