MeV离子轰击碳样品引起的碳氢团簇产额

利用北京大学2×1.7MV静电串列加速器产生的1.5MeV Au2+和Si+束流轰击碳纳米管样品,用二次离子飞行时间质谱方法分析了二次离子成分,通过质量已知的样品的定标,确认了轰击产生的二次离子质量。分析束流轰击后的二次离子产额,发现在此能量下二次离子产额与离子在物质中射程的横向歧离表现出正相关。     

利用高能缓发γ射线测定裂变数

利用裂变产额法得到短时间辐照²³⁵U样品的裂变总数,通过大体积NaI探测器测量3 MeV以上高能缓发γ射线总计数随时间的变化,从而得到一次裂变3 MeV以上高能缓发γ射线总发射率随时间的变化规律,并给出脉冲辐照下高能缓发γ射线的发射率。通过高能缓发γ射线测量了两块²³⁵U样品的裂变数,其相对不确定度小于4%。     

低能高电荷态氮离子与Cu表面相互作用致K-X射线发射的研究

利用中国科学院近代物理研究所的电子回旋共振离子源引出的高电荷态氮离子(N^q+,q=3,5,6),在4.5～120 keV动能范围内系统测量了N^q+(q=3,5,6)与Cu表面碰撞产生的K-X射线能谱;基于原子壳层电离理论计算了K-X射线产额值及其电离截面值。结果表明:N^q+(q=3,5)离子进入靶表面后与Cu原子发生紧密碰撞,在直接库伦电离的作用下发射K-X射线,并且随着入射离子动能的增加,K-X射线产额和K壳层电离截面均单调增大;对于N⁶⁺离子,K-X射线产额与其入射动能没有明显的依赖关系,且在Cu表面形成的"空心原子"级联退激产生的K-X射线产额约占其总K-X射线产额的97%。另外,N⁵⁺离子入射时的K-X射线产额明显高于N³⁺离子入射时的产额。本工作对离子与表面相互作用中形成的"空心原子"的退激过程具有重要的参考价值,并为理解"空心原子"的退激过程和彗星X射线机理的研究提供了基础数据。     

用产额比测量~(235)U/~(238)U同位素丰度比

用裂变产额比法测量了样品中235 U/238 U同位素丰度比。样品受14.8MeV中子短时间辐照后,用HPGe谱仪系统跟踪测量其γ能谱,从各自的特征峰分析得到不同裂变产物的加权平均产额,得到了若干对产物核素的产额比与丰度比的相关曲线。     

1.4MeV-5MeV中子诱发~(238)U裂变产额测量

~(238)U裂变产额测量工作在核数据测量中有着重要意义,本工作利用2.5MeV质子静电加速器产生的1.4MeV-5MeV单能中子诱发238U裂变,通过对裂变产物放射性的测量对裂变产物核素~(135)I、~(133)I、~(105)Ru和~(91)Sr的产额进行了测定。照射过程中中子通量用活化法确定。分析了影响实验测量的多个因素,包括用MCNPX程序对中子在靶头及样品中的多次散射和自屏蔽效应进行了修正,对γ射线在样品中的自吸收进行修正等。得到产额数据典型误差为3.5%,最后把测量结果与已有的裂变产额数据进行比对。     

0.57 MeV、1.0 MeV和1.5 MeV单能中子诱发235U裂变的产物产额绝对测量北大核心CSCD

235U的裂变产物产额是核能应用和核物理研究中的重要基础数据。本工作应用高纯锗γ能谱法绝对测量了0.57、1.0 MeV和1.5 MeV中子诱发235U裂变的各能量点30个质量链的产额数据。样品的裂变率通过双裂变室监测,并利用蒙特卡罗(MCNP)模拟了辐照时样品的中子能谱,结果与国际上相应能量点数据在实验不确定度范围内吻合。本工作得到的产额数据澄清了原有数据最高16%的差异并将数据精度从国际上原有数据精度5%~7%提高到3%~5%。     

热中子在~6LiD中转换为14MeV中子的有效产额分析

简述热中子转换为14MeV中子的原理。建立了由一个热中子转换为可利用的14MeV中子的有效产额的计算分析模型。计算出热中子被6Li吸收的概率、氚核T在6LiD中未泄漏的概率;给出了氚核T和氘核D发生聚变反应以及氚核T与6Li发生聚变反应的截面及其14MeV中子的产额随6LiD厚度变化的曲线。结果表明:当6LiD材料的厚度在0～0.5 mm范围内时,14MeV中子的有效产额随6LiD厚度近似直线增大,然后随6LiD厚度缓慢增加逐渐趋于一个稳定值;当6LiD材料的厚度分别为0.7、1.0 mm时,一个热中子转换为14MeV中子的可利用的有效产额分别为3.18×10-4和3.53×10-4。     

国产GSO晶体的光产额测量

采用与单光电子相比较的方法测量了国产GSO晶体样品的光电子产额,结果表明,GSO样品的光电子产额及能量分辨率与闪烁体在光电倍增管光阴极面上的放置方式有关,在较好条件下,被测GSO晶体的光电子产额可到2013phe/MeV,对137Cs 661.6keV光峰的能量分辩为FWHM=10.1%.     

高时间分辨的聚变反应历程测量系统设计

为了测量惯性约束聚变实验中聚变反应的时间过程,提出了一种高时间分辨的聚变反应历程测量系统设计。该系统主要由闪烁体及鼻锥、光学成像系统和条纹相机系统三部分组成。用于能量分别为2.45MeV和14.03MeV的聚变中子测量时,系统的时间分辨分别优于55ps和40ps,对应的测量下限中子产额分别为1.5×109和4×108。     

用阈探测器活化法测量50MeV/u重离子实验靶区的中子注量率、能谱和中子产额

用阈探测器中子活化法测量了50MeV/u ~(12)C离子实验靶区的次级中子平均注量率、角分布、粗略能谱,并估算了重离子反应的中子产额。     

EXPERIMENTS OF MeV ION BEAM INDUCED ATOMIC MIXING

An experimental apparatus for studies of MeV ion beam modification of materials has been established on a 3 MV tandem accelerator at Fudan university. A system of X-Y electrostatic scanning implantation of MeV heavy ions and in situ Rutherford. backscattering analysis was included in it. The uniformity of scanning implantation was checked by the RBS measurement of a Si wafer implanted with 1 MeV Au ions. MeV ion beam mixing of Au/Si, Au/Ge and Ag/Si systems was preliminarily studied. The samples were irradiated by certain fluences of 1 MeV Ag ions at room temperature. The mixed layers were analyzed in situ using the glancing RBS technique with 2 MeV 4He+ ions. For Au/Si system, a uniformly mixed layer with a defined composition is obtained, and the intermixing is much less for Ag/Si system than for Au/Si system.     

14 MeV能区中子引起的58 Ni(n,P)58m+gCo 反应截面测量

用活化法以^27Al(n，α)^24Na反应截面为中子通量标准，对14McV能区中子引起的^58Ni(n,p)^58m gCo反应截面进行了测量。中子能量是用金硅面垒半导体探测器测定的。     

Depth profiling of fingerprint and ink signals by SIMS and MeV SIMS

Police institutions currently have no analytical method of knowing whether a fingerprint was deposited before or after the document was written or printed. The suitability of using MeV secondary ion mass spectrometry (i.e. SIMS with an MeV ion beam) to determine the order in which a fingerprint and written text were deposited on paper was therefore investigated. A 10 MeV O⁴⁺ beam was used to generate secondary ions from the surface of the samples and to map the molecular fragments from doped fingerprints and inks on paper. The images obtained and the sputtering behaviour of the samples was found to be indicative of the sequence of ink and fingerprint deposits.     

AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite

Carbon nanotubes (CNT) were produced by high energy, heavy ion irradiation (215 MeV Ne, 246 MeV Kr, 156 MeV Xe) of graphite. On samples irradiated with Kr and Xe ions large craters were found by atomic force microscopy, these are attributed to sputtering. Frequently one or several CNTs emerge from the craters. Some of the observed CNTs showed a regular vibration pattern. No other carbon based materials, like amorphous carbon or fullerenes were evidenced. Focused ion beam cuts were used to compare CNTs with surface folds on graphite.     

RBS studies of the lattice damage caused by 1 Me V Si implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

The lattice damage accumulation in GaAs and Al_0.3Ga_0.7As/GaAs superlattices by 1 MeV Si⁺irradiation at room temperature and 350°C has been studied. For irradiations at 350°C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 × 10¹⁵ + Si/cm² for GaAs, and is 5 × 10¹⁵ Si/cm² for Al_0.8Ga_0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350°C. The damage accumulation rate for 1 MeV Si ion implantation in Al_0.3Ga_0.7As/GaAs superlattice is less than that in GaAs.     

High energy resolution PIXE with high efficiency using the heavy ion microbeam

An X-ray crystal spectrometer using a position sensitive proportional counter combined with tandem microbeam line at Osaka National Research Institute have been developed. This system realizes high energy resolution PIXE analysis using a heavy ion microbeam (E < 6 MeV) with reasonable detection efficiency. The design of the spectrometer, such as detection geometry, detectable energy range and energy resolution, are described. This system was applied to high energy resolution PIXE analysis of Ti, SUS and Si with 2 MeV proton and 5 MeV Si³⁺ focused or collimated beams. The best energy resolution was 2 eV for the Si K line.     

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au³⁺ ions with fluences as high as 1 × 10¹⁶ ions/cm² and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.     

Influence of SHI irradiation on the formation of buried SiC

Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C⁺ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag⁷⁺ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C⁺ ions.     

Stopping power measurements of heavy ions (3 ? Z1 ? 14) in Mylar foil by time-of-flight spectrometry

Heavy ions elastic recoil detection analysis coupled with time of flight spectrometer (HIERDA_ToF-E) have been used to measure energy loss of charged particles in thin absorber. The stopping power of heavy ions has been determined in Mylar for ²⁸Si, ²⁷Al, ²⁴Mg, ¹⁹F, ¹⁶O, ¹²C and ⁷Li ions over a continuous range of energies 0.14-0.80 MeV/nucleon. The ions were recoils from the bombardment of different samples (Si, MgO, Al₂O₃, LiF and C) with a 27.5 MeV Kr⁺ beam. The energy loss of the recoil atoms is measured with and without additional foils placed in front of a Surface Barrier Detector (SBD). The energy of individual ions is determined from its ToF data; the exit energy after the stopping foil is measured using the SBD detector. We have compared our stopping values to those predicted by SRIM-2008 computer code, ICRU-73 stopping data tables, MSTAR calculations and to the published data from literature. The results show good agreement with limited existing data but indicate a large deviation among the predicted theoretical values at the low energy side of the stopping maximum peak.     

用次级束流对硅望远镜的时间和能量定标

利用９５ＭｅＶ／ｕ的１６Ｏ束产生的次级束流对半导体硅探测器进行了时间和能量定标。实验结果表明，由于次级束流提供的次级粒子种类多，飞行距离长，因此，能给探测器带来非常精确的定标。