数字信号处理器中FFT的实现

本文深入探讨了FFT算法的特点,并对FFT算法在DSP上的实现方法进行了详细的分析.通过分析阐述并总结了利用DSP实现FFT算法的步骤及规律.     

基于IP核的FPGA FFT算法模块的设计与实现

介绍了一种基于IP核的FFT算法的设计与实现方法。FFT IP核允许设置不同的计算参数与结构,可以方便灵活地实现FFT算法。详细分析了FFT IP核的各个参数的意义。研究结果表明,应用FFT IP核能够设计出符合不同性能要求的高性能的傅里叶变换处理模块,缩短开发周期,节约成本。     

基于CORDIC算法的流水线型FFT处理器设计

首先分析了基二FFT算法的原理以及在FPGA上实现FFT处理器的硬件结构。其次详细研究了在FPGA上实现FFT的具体过程,利用CORDIC算法实现了旋转因子乘法器,解决了整体设计过程中主要面对的几个关键问题,最终利用Verilog编程实现了基二流水线型FFT处理器,利用MATLAB与MODELSIM结合仿真结果表明该设计满足FFT处理器的基本要求,在10 MHz的采样率下完成32点FFT只需要14.45μs,设计方法也简单易行,具有一定的推广价值。     

基于TMS320LF2407的FFT算法的实现及应用

在分析FFT算法的基本原理的基础上,介绍TFFT算法在TMS320LF2407上的实现及其应用。FFT算法程序采用汇编语言编写,可通过C语言函数调用。实验表明,该方法具有实现简单、高效、且扩展性和兼容性强等特点。     

基于FPGA的可扩展高速FFT处理器的设计与实现

本文提出了基于FPGA实现傅里叶变换点数可灵活扩展的流水线FFT处理器的结构设计以及各功能模块的算法实现,包括高组合数FFT算法的流水线实现结构、级间混序读/写RAM地址规律、短点数FFT阵列处理结构以及补码实现CORDIC算法的流水线结构等。利用FPGA实现的各功能模块组装了64点FFT处理器。从其计算性能可知,在输入数据速率为20MHz时,利用此结构实现的FFT处理器计算1024点FFT的运算时间约为52μs。     

时间抽取情况下的旋转因子合并FFT算法和TMFFT的软件实现

马滕斯(Martens)提出了一种效率高(可与WFTA法和PFA法相比拟)、结构简单(与FFT法相似)的DFT计算方法RGFA。作者已经证明,在基2的情况下,RCFA与旋转因子合并的频率抽取FFT算法是完全等价的。本文给出了旋转因子合并的时间抽取FFT算法,从而使得在任何条件下,目前使用的FFT算法都可以用外部特性完全相同、内部结构基本相同的高效算法旋转因子合并FFT算法来代替。本文还给出了实现旋转因子合并FFT算法的软件。     

一种基于高阶近似核DFT的快速实现算法

理论分析优化近似核和基2DIT—FFT结构,提出并实现了一种高阶近似核DFT的快速算法。算法基于高阶近似核,无需三角运算实现FFT并提高了动态范围,基于DIT—FFT算法对DFT进行分解和蝶形运算,有效减少了运算量。理论分析和实验结果验证了方法的有效性,DSP硬件验证了算法的快速性。算法简单且具有广泛的适用性。     

浅析FFT算法中对称关系

本文通过分析比较时间抽取FFT算法以及频率抽取FFT算法的基本原理,揭示了FFT算法中存在的对称关系,同时也给出了任意基FFT算法系数矩阵的产生机理.上述的分析比较有助于学生更好地理解和实现FFT算法,同时也可借鉴该算法的思想设计其他算法.     

电力谐波检测中基于FPGA的FFT设计与实现

电力谐波污染治理关键在于谐波检测,而在各种检测谐波的理论方法中,快速傅里叶变换(FFT)算法由于其成熟并易于实现而受到了广泛的应用。在FFT的各种基算法中,基-4算法占用资源适中,并通过优化其复数乘法器设计,使得在利用FPGA实现其FFT结构时,进一步降低了其处理器资源的占用率,从而实现其高速运行。     

基于IPCore的FFT仿真与硬件实现

由于目前CDMA快速码捕获系统对捕获速度的要求越来越高,而目前使用比较普遍的码捕获方法是基于FFT的快速码捕获。因此开发出一种快速简单实用的FFT计算方法势在必行。基于Cooley-Tukey提出的算法,实现了一种基-4FFT的FPGA设计方法。利用FPGA的丰富资源以及灵活的IPCore功能,使设计流程大大简化,为实现FFT算法提供了一种方便快捷的方法。仿真和实验结果证明,该方法准确可靠,计算速度快,相比于以前的算法,该方法提高了至少一倍的运算速度。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.