首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 46 毫秒
1.
The reactive sintering of 3Ti/SiC/C to form the layered ternary carbide Ti3SiC2 was studied in situ by time-resolved neutron powder diffraction. A number of intermediate processes occur during the synthesis beginning with the α-β transition in Ti. Concurrent with the α-β transition, two intermediate phases, TiC x and Ti5Si3C x ( x ≤ 1), form. These phases account for almost the entire sample in the range 1500–1600°C beyond which they react with each other and a small amount of free C to form the product phase Ti3SiC2.  相似文献   

2.
Titanium silicon carbide (Ti3SiC2) and Ti3SiC2-based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti3SiC2. High Ti3SiC2 conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti3SiC2. A reaction mechanism, where Ti3SiC2 nucleates on Ti5Si3C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti3SiC2.  相似文献   

3.
Mechanical alloying (MA) has been used to synthesize Ti3SiC2 powder from the elemental Ti, Si, and C powders. The MA formation conditions of Ti3SiC2 were strongly affected by the ball size for the conditions used. MA using large balls (20.6 mm in diameter) enhanced the formation of Ti3SiC2, probably via an MA-triggered combustion reaction, but the Ti3SiC2 phase was not synthesized only by the MA process using small balls (12.7 mm in diameter). Fine powders containing 95.8 vol% Ti3SiC2 can be obtained by annealing the mechanically alloyed powder at relatively low temperatures.  相似文献   

4.
Formation of titanium silicon carbide (Ti3SiC2) by mechanical alloying (MA) of Ti, Si, and C powders at room temperature was experimentally investigated. A large amount of granules less than 5 mm in size, consisting of Ti3SiC2, smaller TiC particles, and other silicides, have been obtained after ball milling for only 1.5 h. The effect of excess Si in the starting powders on the formation of Ti3SiC2 was studied. The formation mechanism of Ti3SiC2 was analyzed. It is believed that a mechanically induced self-propagating reaction is ignited during the MA process. A possible reaction mechanism was proposed to explain the formation of the final products.  相似文献   

5.
Ti3SiC2 has many salient properties including low density, high strength and modulus, damage tolerance at room temperature, good machinablity, and being resistant to thermal shock and oxidation below 1100°C. However, the low hardness and poor oxidation resistance above 1100°C limit the application of this material. The poor oxidation resistance at temperatures above 1100°C was because of the absence of protective layer in the scale and the presence of TiC impurity phase. TiC impurity could be eliminated by adding a small amount of Al to form Ti3Si(Al)C2 solid solutions. Although the high-temperature oxidation resistance was significantly improved for the Ti3Si(Al)C2 solid solutions, the strength at high temperatures was lost. One important way to enhance the high-temperature strength is to incorporate hard ceramic particles like SiC. In this article, we describe the in situ synthesis and simultaneous densification of Ti3Si(Al)C2/SiC composites using Ti, Si, Al, and graphite powders as the initial materials. The effect of SiC content on high-temperature mechanical properties and oxidation resistance were investigated. The mechanisms for the improved high-temperature properties are discussed.  相似文献   

6.
Composites in the SiC–TiC–Ti3SiC2 system were synthesized using reactive hot pressing at 1600°C. The results indicate that addition of Ti3SiC2 to SiC leads to improved fracture toughness. In addition, high microhardness can be retained if TiC is added to the material. The best combination of properties obtained in this study is K I c =8.3 MPa·m1/2 and H v=17.6 GPa. The composition can be tailored in situ using the decomposition of Ti3SiC2. Ti3SiC2 decomposed rapidly at temperatures above 1800°C, but the decomposition could be conducted in a controlled manner at 1750°C. This can be used for synthesis of fully dense composites with improved properties by first consolidating to full density a softer Ti3SiC2-rich initial composition, and then using controlled decomposition of Ti3SiC2 to achieve the desired combination of microhardness and fracture toughness.  相似文献   

7.
Mechanical alloying (MA) synthesis of Ti3SiC2 from a stoichiometric elemental powder mixture of Ti, Si, and C was conducted by using a planetary mill with a specially designed MA jar, which enables the real-time measurement of temperature and gas pressure during the MA process. Sudden gas pressure and temperature rises were detected when the mixed powders were mechanically alloyed for a certain period, and consequently a large amount of Ti3SiC2 particles was synthesized. Using the Ti–Si–C system as an example, the present study confirmed the combustion reaction triggered by the ball-milling process for the first time.  相似文献   

8.
In this article, the first part of a two-part study, we report the reaction path and microstructure evolution during the reactive hot isostatic pressing of Ti3SiC2, starting with titanium, SiC, and graphite powders. A series of interrupted hot isostatic press runs have been conducted as a function of temperature (1200°–1600°C) and time (0–24 h). Based on X-ray diffractometry and scanning electron microscopy, at 1200°C, the intermediate phases are TiC x and Ti5Si3C x . Fully dense, essentially single-phase samples are fabricated in the 1450°–1700°C temperature range. The time-temperature processing envelope for fabricating microstructures with small (3–5 μm), large (∼200 μm), and duplex grains, in which large (100–200 μm) Ti3SiC2 grains are embedded in a much finer matrix, is delineated. The microstructure evolution is, to a large extent, determined by (i) the presence of unreacted phases, mainly TiC x , which inhibits grain growth; (ii) a large anisotropy in growth rates along the c and a directions (at 1450°C, growth normal to the basal planes is about an order of magnitude smaller than that parallel to these planes; at 1600°C, the ratio is 4); and (iii) the impingement of grains. Ti3SiC2 is thermally stable under vacuum and argon atmosphere at temperatures as high as 1600°C for as long as 24 h. The influence of grain size on the mechanical properties is discussed in the second part of this study.  相似文献   

9.
Ti3SiC2 is synthesized by self-propagating high-temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time-resolved X-ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti3SiC2 might be formed from Ti–Si liquid phase and solid TiC x . Finally, the effect of the powders starting composition on the Ti3SiC2 synthesis is studied. For the investigated initial mixtures, TiC x is always formed as a major impurity together with the Ti3SiC2 phase.  相似文献   

10.
In this work, we report on the interdiffusion of Ge and Si in Ti3SiC2 and Ti3GeC2, as well as that of Nb and Ti in Ti2AlC and Nb2AlC. The interdiffusion coefficient, D int, measured by analyzing the diffusion profiles of Si and Ge obtained when Ti3SiC2–Ti3GeC2 diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti3Ge0.5Si0.5C2), was found to be given by
D int increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti2AlC–Nb2AlC couples was measured in the 1723–1873 K temperature range. The D int for the Matano interface composition, viz. ≈(Ti0.5,Nb0.5)2AlC, was found to be given by
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter.  相似文献   

11.
It is demonstrated that the M n +1AX n phase Ti3AlC2 may be readily synthesized by sintering a stoichiometric mixture of the lower order MAX phase Ti2AlC mixed with a stoichiometric amount of TiC in the temperature range 1350°–1450 °C. High-quality Ti3AlC2 was readily produced using sintering times in the range 2–5 h. In general, <2% of unwanted or remnant phases were found to be present and in some samples none could be detected at all.  相似文献   

12.
In situ neutron diffraction at 0.9 s time resolution was used to reveal the reaction mechanism during the self-propagating high-temperature synthesis (SHS) of Ti3SiC2 from furnace-ignited stoichiometric 3Ti + SiC + C mixtures. The diffraction patterns indicate that the SHS proceeded in five stages: (i) preheating of the reactants, (ii) the α→β phase transformation in Ti, (iii) preignition reactions, (iv) the formation of a single solid intermediate phase in <0.9 s, and (v) the rapid nucleation and growth of the product phase Ti3SiC2. No amorphous contribution to the diffraction patterns from a liquid phase was detected and, as such, it is unlikely that a liquid phase plays a major role in this SHS reaction. The intermediate phase is believed to be a solid solution of Si in TiC such that the overall stoichiometry is ∼3Ti:1Si:2C. Lattice parameters and known thermal expansion data were used to estimate the ignition temperature at 923 ± 10°C (supported by the α→β phase transformation in Ti) and the combustion temperature at 2320 ± 50°C.  相似文献   

13.
The effect of vacuum annealing on the thermal stability and phase transition of Ti3SiC2 has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti3SiC2 undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti5Si3C x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum-annealed Ti3SiC2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti5Si3C x with depth.  相似文献   

14.
The 1100°C isothermal section and the isopleths at 5, 10, and 15 at.% C in the Ti–Si–C system were determined by DTA and XRD methods. Five invariant reactions (L (liquid) = Si + SiC + TiSi2 at 1330°C, L = TiSi + TiSi2+ Ti5Si3C x at 1485°C, L + Ti5Si3C x = Ti3SiC2+ TiSi2 at 1485°C, L + Ti3SiC2= TiSi2+ SiC at 1473°C, and L + TiC = bcc-(Ti) + Ti5Si3C x at 1341°C) were observed. The transition temperature for L + TiC = Ti3SiC2+ SiC was measured by the Pirani technique. Optimized thermodynamic parameters for the Ti–Si–C system were then obtained by means of the CALPHAD (calculation of phase diagrams) method applied to the present experimental results and reliable literature data. The calculations satisfactorily account for most of the experimental data.  相似文献   

15.
Ti3SiC2/HAp composites with different Ti3SiC2 volume fractions were fabricated by spark plasma sintering (SPS) at 1200°C. The effects of Ti3SiC2 addition on the mechanical properties and microstructures of the composites were investigated. The bending strength and fracture toughness of the composites increased with increasing of Ti3SiC2 content, whereas the Vickers hardness decreased. The bending strength and fracture toughness reached 252±10 MPa and 3.9±0.1 MPa·m1/2, respectively, with the addition of 50 vol% Ti3SiC2. The increases in the mechanical properties were attributed to the matrix strengthening and interactions between cracks and the Ti3SiC2 platelets.  相似文献   

16.
Compacts of TiB2 with densities approaching 100% are difficult to obtain using pressureless sintering. The addition of SiC was very effective in improving the sinterability of TiB2. The oxygen content of the raw TiB2 powder used in this research was 1.5 wt%. X-ray photoelectron spectroscopy showed that the powder surface consisted mainly of TiO2 and B2O3. Using vacuum sintering at 1700°C under 13–0.013 Pa, TiB2 samples containing 2.5 wt% SiC achieved 96% of their theoretical density, and a density of 99% was achieved by HIPing. TEM observations revealed that SiC reacts to form an amorphous phase. TEM-EELS analysis indicated that the amorphous phase includes Si, O, and Ti, and X-ray diffraction showed the reaction to be TiO2+ SiC → SiO2+ TiC. Therefore, the improved sinterability of TiB2 resulted from the SiO2 liquid phase that was formed during sintering when the raw TiB2 powder had 1.5 wt% oxygen.  相似文献   

17.
In this article, the second part of a two-part study, we report on the mechanical behavior of Ti3SiC2. In particular, we have evaluated the mechanical response of fine-grained (3–5 μm) Ti3SiC2 in simple compression and flexure tests, and we have compared the results with those of coarse-grained (100–200 μm) Ti3SiC2. These tests have been conducted in the 25°–1300°C temperature range. At ambient temperature, the fine- and coarse-grained microstructures exhibit excellent damage-tolerant properties. In both cases, failure is brittle up to ∼1200°C. At 1300°C, both microstructures exhibit plastic deformation (>20%) in flexure and compression. The fine-grained material exhibits higher strength compared with the coarse-grained material at all temperatures. Although the coarse-grained material is not susceptible to thermal shock (up to 1400°C), the fine-grained material thermally shocks gradually between 750° and 1000°C. The results presented herein provide evidence for two important aspects of the mechanical behavior of Ti3SiC2: (i) inelastic deformation entails basal slip and damage formation in the form of voids, grain-boundary cracks, kinking, and delamination of individual grains, and (ii) the initiation of damage does not result in catastrophic failure, because Ti3SiC2 can confine the spatial extent of the damage.  相似文献   

18.
Nearly pure Ti3AlC2 powders have been synthesized by calcining a mixture of titanium, aluminum, and graphite powders using tin powders as additives. Four recipes with different mole ratios of Ti:Al:C:Sn were examined at calcining temperatures from 1300° to 1500°C. The addition of Sn effectively inhibited the generation of thermal explosion when the volume of the starting materials is larger, and considerably reduced the lower-limit calcining temperature. The nearly pure Ti3AlC2 powders can be obtained reliably on a large scale by calcining the starting materials with a mole ratio of 3Ti:1Al:1.8C:0.2Sn at temperatures from 1350° to 1500°C.  相似文献   

19.
Polycrystalline bulk samples of Ti3SiC2 were fabricated by reactively hot-pressing Ti, graphite, and SiC powders at 40 MPa and 1600°C for 4 h. This compound has remarkable properties. Its compressive strength, measured at room temperature, was 600 MPa, and dropped to 260 MPa at 1300°C in air. Although the room-temperature failure was brittle, the high-temperature load-displacement curve shows significant plastic behavior. The oxidation is parabolic and at 1000° and 1400°C the parabolic rate constants were, respectively, 2 × 10−8 and 2 × 10−5 kg2-m−4.s−1. The activation energy for oxidation is thus =300 kJ/mol. The room-temperature electrical conductivity is 4.5 × 106Ω−1.m−1, roughly twice that of pure Ti. The thermal expansion coefficient in the temperature range 25° to 1000°C, the room-temperature thermal conductivity, and the heat capacity are respectively, 10 × 10−6°C−1, 43 W/(m.K), and 588 J/(kgK). With a hardness of 4 GPa and a Young's modulus of 320 GPa, it is relatively soft, but reasonably stiff. Furthermore, Ti3SiC2 does not appear to be susceptible to thermal shock; quenching from 1400°C into water does not affect the postquench bend strength. As significantly, this compound is as readily machinable as graphite. Scanning electron microscopy of polished and fractured surfaces leaves little doubt as to its layered nature.  相似文献   

20.
The cyclic fatigue and fracture toughness behavior of reactive hot-pressed Ti3SiC2 ceramics was examined at temperatures from ambient to 1200°C with the objective of characterizing the high-temperature mechanisms controlling crack growth. Comparisons were made of two monolithic Ti3SiC2 materials with fine- (3–10 μm) and coarse-grained (70–300 μm) microstructures. Results indicate that fracture toughness values, derived from rising resistance-curve behavior, were significantly higher in the coarser-grained microstructure at both low and high temperatures; comparative behavior was seen under cyclic fatigue loading. In each microstructure, Δ K th fatigue thresholds were found to be essentially unchanged between 25° and 1100°C; however, there was a sharp decrease in Δ K th at 1200°C (above the plastic-to-brittle transition temperature), where significant high-temperature deformation and damage are first apparent. The substantially higher cyclic-crack growth resistance of the coarse-grained Ti3SiC2 microstructure was associated with extensive crack bridging behind the crack tip and a consequent tortuous crack path. The crack-tip shielding was found to result from both the bridging of entire grains and from deformation kinking and bridging of microlamellae within grains, the latter forming by delamination along the basal planes.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号