一种卫星接收天线的研究

介绍了一种宽带宽、轴比带宽宽的卫星接收天线的设计,天线采用微带线共面馈电的微带天线形式,利用增加寄生贴片展宽天线单元的电压驻波比带宽和圆极化轴比带宽,利用旋转馈电技术扩展了天线阵列的圆极化轴比带宽.天线设计得到了实验的验证.     

宽带圆极化微带天线的几种实现方法

在简要概述圆极化微带天线工作原理的基础上,重点介绍了目前国内外较为先进的圆极化微带天线实现宽带的多种方法,包括微带贴片天线、缝隙天线,以及采用PBG结构的圆极化天线。这些方法分别采用单点馈电,多点馈电或多元组合实现圆极化,均有效拓展了圆极化天线的阻抗匹配带宽和圆极化轴比带宽。参考一些实例验证了这些方法的可行性,然后展望了其可能的发展趋势。     

一种小型化宽带圆极化微带天线的设计

设计并加工了一种采用同轴背馈方式馈电的小型化宽带圆极化微带天线。针对单点馈电微带天线轴比带宽窄的问题,通过增加馈电网络对天线辐射贴片进行双点馈电以展宽轴比带宽,得到了良好的效果。馈电网络根据带状线理论设计,利用U形接地板巧妙地实现了宽带天线的结构小型化。通过对辐射贴片的双点馈电获得了令人满意的电压驻波比带宽和良好的圆极化性能。通过仿真和实际测试表明,该天线VSWR≤2的带宽达到了30％,3dB圆极化带宽约为26％,同时频带内天线的增益达到4dB。     

一种新型宽带圆极化微带天线的设计

采用四层介质耦合馈电结构,设计了一种新型宽带圆极化微带天线.选择方形倒角贴片为辐射单元,采用开路微带线耦合馈电,附加一并联调谐枝节,不仅拓宽了阻抗匹配带宽,而且有效改善了天线的圆极化轴比特性.利用这样的圆极化单元,组成四元圆极化天线阵.经过计算和测试,天线工作于3.0GHz时,单元和天线阵的阻抗带宽分别达到了14.3%和31.3%(VSWR<2),3dB轴比带宽分别达到11.67%和29.87%.这种结构的圆极化天线阵在无线通信等领域应用前景广阔.     

宽带圆极化微带天线的设计

在传统圆极化天线的基础上,设计了一种宽带四元组合圆极化微带天线,采用双层电磁耦合馈电结构,不仅拓宽了阻抗匹配带宽,而且有效改善了天线的圆极化轴比特性。经过计算和测试,天线工作于Ku波段时,阻抗带宽和3dB轴比带宽分别达到了26.4%(VSWR<2)和8.64%。这种结构的圆极化天线在卫星通信等领域应用前景广阔。     

小型多馈源宽频微带天线分析与设计

本文着重研究了提高轴比带宽的方法。从多馈源实现圆极化的机理出发,从理论上分析证明了采用多馈源技术可有效展宽轴比带宽。在小型微带贴片天线上,设计馈电网络,采用探针馈电,为贴片提供等幅、相位相差90°的激励,形成圆极化。仿真及实测结果表明,这种天线与单馈点天线相比,展宽了轴比带宽,提高了低仰角不圆度指标。     

新型单馈共口径三频三极化微带天线的设计

提出了一种新型的利用单口馈电的共口径三频三极化微带天线,该天线可覆盖北斗系统的3个工作频段。其中北斗一代L频段为左旋圆极化,S频段为右旋圆极化,采用单层结构两块贴片嵌套的形式实现双频工作,通过单馈形式引入微扰产生两个圆极化信号;北斗二代L：B3频段为线极化,通过挖孔耦合馈电的形式实现;天线采用单个底馈探针结合容性托盘耦合馈电,展宽了天线的工作带宽,弥补了单馈圆极化微带天线轴比带宽窄的缺点。     

一种宽频带二元微带天线阵的设计与制作

设计了一种连续旋转馈电方式下层叠结构的双单元圆极化微带天线阵。讨论了利用调谐支节优化层叠结构微带天线阻抗带宽的方法,并在此基础上引入连续旋转馈电方式组成了二元微带天线阵。制作并测试了相应的天线阵,结果表明:采用层叠结构可以有效扩展微带天线的阻抗带宽,同时提高了天线增益,连续旋转馈电技术则提高了天线阵的圆极化纯度,测试结果与仿真吻合较好。     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

基于十字形缝隙耦合的宽带圆极化微带天线设计

为了改善微带天线的带宽性能,提出了一种采用十字形缝隙作为馈电方式,利用三个Wilkinson功分器组成馈电网络的宽带圆极化微带天线的设计方法。讨论了构建这种微带天线的基本技术,借助HFSS仿真软件进行设计和验证。依据设计结果委托专业研究所制作了实物天线,测试结果表明,该天线的阻抗带宽和3 dB轴比带宽分别达到40.38%和20.7%,中心频率为2.6 GHz,测量结果与仿真结果吻合良好,为低后瓣和宽带圆极化微带天线设计提供了一种新的工程设计方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.