Carbon-coated nano-sized LiFe1?xMnxPO4 solid solutions (0?≤?x?≤?1) obtained from phosphate–formate precursors

LiFe_1−x Mn _x PO₄ solid solutions in the whole concentration range (0 ≤ x ≤ 1) are obtained at 500 °C by a phosphate–formate precursor method. The method is based on the formation of homogeneous lithium–iron–manganese phosphate–formate precursors by freeze-drying of aqueous solutions containing Li(I), Fe(II), Mn(II), phosphate, and formate ions. Thermal treatment of the phosphate–formate precursors at temperatures at 500 °C yields nano-sized LiFe_1−x Mn _x PO₄ coated with carbon. The structure and the morphology of the LiFe_1−x Mn _x PO₄ compositions are studied by XRD, IR spectroscopy, and SEM analysis. The in situ formed carbon is analyzed by Raman spectroscopy. The electrochemical performance of LiFe_1−x Mn _x PO₄ is tested in model lithium cells using a galvanostatic mode. All LiFe_1−x Mn _x PO₄ compositions are characterized with an ordered olivine-type structure with a homogeneous Fe²⁺ and Mn²⁺ distribution in the 4c olivine sites. The morphology of LiFe_1−x Mn _x PO₄ consists of plate-like aggregates which are covered by in situ formed carbon. Inside the aggregates nano-sized isometric particles with narrow particles size distribution (between 60 and 100 nm) are visible. The structure of the deposited carbon presents a considerable disordered graphitic phase and does not depend on the Fe-to-Mn ratio. The solid solutions LiFe_1−x Mn _x PO₄ deliver a good reversible capacity due to the Fe²⁺/Fe³⁺ and Mn²⁺/Mn³⁺ redox-couples at 3.5 and 4.1 V, respectively.     

Coprecipitation synthesis and optical absorption property of Zn2TixSn1–xO4 (0?≤?x?≤?1) solid solutions

We report a coprecipitation method for the preparation of solid solutions in the Zn₂Ti _x Sn_1–x O₄ (0 ≤ x ≤ 1) series. The precipitates obtained from the coprecipitation were calcined using different temperatures and then characterized with X-ray diffraction (XRD), Raman scattering (RS), scanning electron microscopy (SEM), and surface area measurements to gain insights into the solid-state reaction and phase transformation during the calcinations. Formation of the Zn₂Ti _x Sn_1–x O₄ solid solutions was observed after the calcination up to 1000 °C, which is much lower than the temperature (1300 °C) required in the conventional solid-state reaction method. The optical absorption property of the Zn₂Ti _x Sn_1–x O₄ solid solutions, measured by ultraviolet-visible diffuse reflectance spectroscopy (UV–Vis DRS), was shown to change according to the composition of the solid solutions.     

Thermal conductivity of Ca1 ? xHoxF2 + x optical ceramics

The thermal conductivity of Ca_{1 − x} Ho _x F_{2 + x} (x ≤ 0.03) optical ceramics has been studied experimentally in the temperature range 50–300 K. With increasing holmium content, the thermal conductivity of the ceramics decreases, especially at low temperatures: from 10.2 to 2.3 W/(m K) at 300 K and from 250 to 4.5 W/(m K) at 50 K.     

Effect of Mg substitution on microstructure and electrical properties of Mn1.25Ni0.75Co1.0?xMgxO4(0?≤?x?≤?1) NTC ceramics

The NTC thermistors based on spinel-type semiconducting electroceramics with compositions Mn_1.25Ni_0.75Co_1.0−x Mg _x O₄ (0 ≤ x ≤ 1) were synthesized by solid-state method. The influences of Mg content on the Mn_1.25Ni_0.75Co_1.0−x Mg _x O₄ materials were investigated by laser particle size analyzer, XRD, SEM, EDS and electrical measurements, respectively. The experiment results show that the substituted Mg suppresses the separation of NiO phase. Both the grain size and density decrease as the amount of Mg content in Mn_1.25Ni_0.75Co_1.0−x Mg _x O₄ samples increases. In particular, the substituted Mg leads to a decrease in the resistance drift of the Mn_1.25Ni_0.75Co_1.0−x Mg _x O₄ NTC ceramics after aging test. This indicates that the Mg substituted Mn_1.25Ni_0.75Co_1.0−x Mg _x O₄ NTC ceramics display high electrical stability in comparison with the Mg-free Mn_1.25Ni_0.75Co_1.0O₄ ceramics.     

Ferromagnetic Resonance in Ga1?xMnxAs

We report on ferromagnetic resonance measurements of Ga_1–x Mn _x As thin films with Mn contents 0.022 x 0.051. For x 0.036 and the external magnetic field normal to the thin film, we observe several resonances, which we identify as spin wave resonances. The non-quadratic mode spacing can be consistently explained by a linear gradient in the magnetic properties of the films. From the measurements, the exchange constant A can be deduced for different Mn contents x.     

Structural and electrical properties of fritless Ni(1?x)CuxMn2O4 (0?≤?x?≤?1) thick film NTC ceramic

Spinel structured NTC thermistor Ni_(1−x)Cu _x Mn₂O₄ (0 ≤ x ≤ 1) ceramics was prepared by oxalic precursor method and fritless thick films screen printed on alumina. The composition dependent structural and electrical properties are reported in this paper. The results show that with increasing copper ion substitution both Cu²⁺ and Mn⁴⁺ predominantly occupy the octahedral site. The concentration of Cu²⁺ ions in octahedral site increases while that of Ni²⁺ ions decreases linearly. The thick film Ni_(1−x)Cu _x Mn₂O₄ ceramic comply with Arrhenius equation. A thermistor constant of ~1,200 K has been obtained for fritless thick film NTC ceramics using inorganic binders in the RT/90 thermal range.     

Molecular beam epitaxy of Pb1 ? xEuxTe and Pb1 ? xSnxTe layers and related periodic structures

Layers and periodic Bragg structures based on Pb_{1 − x} Eu _x Te (0 < x < 1) and Pb_{1 − x} Sn _x Te (0 < x < 0.1) ternary solid solutions have been grown on (111) BaF₂ and (111) Si substrates by molecular beam epitaxy. X-ray diffraction measurements show that the layers in three-period EuTe/Pb_0.94Eu_0.06Te structures maintain the [111] crystallographic orientation normal to the substrate plane. In the interface plane, the [110] directions of the layers and substrate are parallel to each other. The full width at half maximum of the rocking curve of each layer of both the binary and ternary compounds is about 20′. The large optical contrast (40%) in such structures allowed us to reach 99.9% mid-IR reflectivity.     

Magnetic and transport properties of Mn3+xGa1?xN compounds

Mn_3+x Ga_1−x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn₂N_0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn₃GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn_3.1Ga_0.9N is far above 380 K. The enhanced magnetization of Mn₃GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn₃GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4–7%.     

Magnetic Phase Diagram of Ca1?xMnxO

Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca_1–x Mn _x O. On increasing the Mn content, magnetic ordering changes from spin glass behavior for 0.25 x 0.4 to antiferromagnetic order. The paramagnetic/antiferromagnetic transition is of second order for 0.5 x 0.65 and of first order for x 0.7. For low Mn concentrations, the high-temperature alternating current susceptibility can be described by a diluted Heisenberg magnet model developed for diluted magnetic semiconductors.     

X-ray diffraction study of multicomponent oxides in the Zn2 ? x(TiaZrb)1 ? xFe2xO4 system

The multicomponent refractory oxide system Zn_{2 − x} (Ti _a Zr _b )_{1 − x} Fe_2x O₄ (a + b = 1; a: b = 1: 5, 1: 4, 1: 3, 1: 2, 1: 1, 2: 1, 3: 1, 4: 1; x = 0–1.0; Δx = 0.05) has been studied by X-ray diffraction, using samples prepared by melting appropriate metal oxide mixtures in a low-temperature hydrogen-oxygen plasma. Two phases, both with wide homogeneity ranges, have been identified: α-phase, with a cubic inverse spinel structure, and β-phase, with a tetragonal inverse spinel structure. The phase boundaries in the system have been determined. Structural data are presented for about 100 solid solutions.     

Thermodynamic evaluation and potentiometric study of Cd1?xMnxTe and Cd1?xZnxTe dissolution in acid and alkaline solutions

We have performed thermodynamic calculations and have constructed Pourbaix diagrams representing redox processes in the MnTe-H₂O, ZnTe-H₂O, Cd_1−x Mn _x Te-H₂O, and Cd_1−x Zn _x Te-H₂O systems. Analysis of the Pourbaix diagrams and potentiometric data attests to different etching behaviors of Cd_1−x Mn _x Te and Cd_1−x Zn _x Te solid solutions in alkaline and acid solutions. Original Russian Text ? S.G. Dremlyuzhenko, A.G. Voloshchuk, Z.I. Zakharuk, I.N. Yurijchuk, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 1, pp. 26–34.     

Relation of Structure and Superconductivity in Self-compensated Y1?xCaxBa2Cu3?xAlxOz System

The co-doped compounds of Y_1−x Ca _x Ba₂Cu_3−x Al _x O _z , with x from 0.1 to 0.4, were synthesized through a solid-state reaction method. Structural and superconducting properties have been investigated by X-ray diffraction, Rietveld refinement, and DC magnetization measurement. The lattice constant a decreases while b increases with the addition of x. The difference between a and b diminishes gradually. Careful study of the crystalline structure shows that the critical temperature (T _c ) changes monotonically with some local structural parameters, such as the difference between Ba and Cu(2) atoms’ Z coordinates, the bond length of Cu(2)–O(4), and the bond angle of Cu(2)–O(2)–Cu(2), which are all closely related to the interaction between the perovskite block and the rock salt block in the unit cell. The results indicated that the influence of the crystalline structure on superconductivity is important and independent of the carrier concentration.     

Superconducting Properties of Carbon and Zn Double-doped Mg1?xZnx(B1?xCx)2

A series of polycrystalline samples of Mg_1−x Zn _x (B_1−x C _x )₂ (x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were synthesized by a conventional solid-state reaction method under a background pressure about 10⁻³ Pa. Phase identification, crystal structure and superconducting transition temperature (T _c) were studied by means of X-ray diffraction (XRD) and resistivity measurements. The results indicated that the lattice parameters a and c show no clear trend in their changes with increasing doping level, and it turned out that the dopants had a marked effect on the crystal-lattice parameters and changed the crystal structure of the samples. The T _c for Mg_1−x Zn _x (B_1−x C _x )₂ decreased with C and Zn doping, but the rate of decrease was slower than single C-doped. We propose that the suppression of T _c by doping originates largely from the structural change.     

Electrical Characterization of p-Type Pb1?xEuxTe

The transport properties of p-type Pb_1–x Eu _x Te epitaxial layers were studied as a function of Eu content, temperature, and magnetic field. The low-temperature hole mobility is drastically reduced when the Eu concentration is increased from 0 to 6%, while the hole concentration remains almost constant. A metal-insulator transition was observed for x 0.04, which is probably induced by the disorder caused by the introduction of Eu. For temperatures down to 10 K, only positive magnetoresistance has been observed at low magnetic fields. An anomalous behavior of the resistivity as a function of temperature has been detected for a Eu content about 5%, which is attributed to the resonance between the localized Eu 4f level and the valence band maximum.     

Crystal structure and magnetic properties of high-coercivity Sr1 ? xPrxFe12 ? xZnxO19 solid solutions

Sr_1−x Pr _x Fe_{12 − x} Zn _x O₁₉ ferrites with x = 0, 0.1, 0.2, 0.3, 0.4, and 0.5 have been prepared by solid-state reactions between praseodymium, iron, and zinc oxides and strontium carbonate in air at 1470 K. According to X-ray diffraction results, the samples with x ≤ 0.2 were single-phase and those with 0.3 ≤ x ≤ 0.5 contained, in addition to the magnetoplumbite phase, small amounts of α-Fe₂O₃, ZnFe₂O₄, and PrFeO₃. The mixed-phase samples further fired twice at 1470 K for 4 and 2 h contained no impurity phases at x = 0.3 and contained only α-Fe₂O₃ at x = 0.4 and 0.5. In the composition range 0 ≤ x ≤ 0.3, the a and c cell parameters, unit-cell volume V, and X-ray density ρ_x of the magnetoplumbite phase vary linearly according to the relations a(?) = 5.8869 − 0.0162x, c(?) = 23.027 + 0.449 x, V(?³)= 691.10 + 9.65x, and ρ_x(g/cm³) = 5.102 + 0.230 x. The highest degree of combined heterovalent substitution of Pr³⁺ for Sr²⁺ and Zn²⁺ for Fe³⁺ in the SrFe₁₂O₁₉ ferrite (formation of Sr_1−x Pr _x Fe_{12 − x} Zn _x O₁₉ solid solutions) at 1470 K is x = 0.32−0.36. The saturation magnetization per formula unit (n _s) of the x = 0.1 ferrite exceeds that of SrFe₁₂O₁₉ by 1.7% at 6 K and by 15.2% at 308 K. The 308-K n _s and coercive force (_σ H _c) of the x = 0.2 ferrite exceed those of SrFe₁₂O₁₉ by 7.6 and 8.5%, respectively.     

Effect of Y Doping on Superconductivity and Spin-Density-Wave States in Sm1?xYxFeAsO0.8F0.2 and Sm1?xYxFeAsO

Y doping effects on crystal structure, resistivity, superconductivity, and spin-density-wave states in the parent and F-doped SmFeAsO compounds have been studied. Y doping leads to shrinkage of the lattice parameters in both systems. The superconductivity of Sm_1−x Y _x FeAsO_0.8F_0.2 is suppressed by Y doping with onset T _c decreasing monotonically from 52.6 K at x=0 to 25 K at x=0.5. A weak resistivity anomalies around 120 K ascribed to the spin-density-wave instability is observed in the sample of x=0.5. In parent SmFeAsO compound, the resistivity anomaly temperature was detected to be around 150 K and shifted towards lower temperatures with the Y doping level increased. It is concluded that a negative pressure effect takes responsibilities for the decrease of T _c in Sm_1−x Y _x FeAsO_0.8F_0.2.     

Microscopic Scenario for x = 1/8 Anomaly in La2 ? xSrxCuO4

We adopt a t ₁-t ₂-t ₃-J-G model for explanation of x = 1/8 anomaly in La_{2 – x} Sr _x CuO₄ family compound. The calculated charge susceptibility shows a maximum near Q = (, ) at intermediate temperatures and near (, /2) as temperature approaches zero, in agreement with neutron scattering experiments. Coulomb repulsion G between the first neighbors turns out to be the source of Charge Density Waves (CDW) in narrow band t ^eff ₁, t ^eff ₂, t ^eff ₃ < G. For physically realistic hopping values we obtain the CDW amplitude e _Q = x. The in-phase domain structure as a candidate for stripe picture is proposed.     

Band gap modified Al-doped Zn1?xMgxO and Zn1?yCdyO transparent conducting thin films

Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films were prepared on glass substrates by sol–gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg²⁺ and Cd²⁺ for Zn²⁺ in their solid solution. The effects of narrowing and widening band gap (E _g) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50–60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.     

Structural and dielectric properties of Na1?xBaxNb1?x(Sn0.5Ti0.5)xO3 ceramics

Lead-free (1 − x)NaNbO₃/xBa(Ti_0.5Sn_0.5)O₃ (x = 0.1, 0.125, 0.15, 0.175, 0.2, and 0.3) ceramics were elaborated by the conventional ceramic technique. Sintering has been made at 1523 K for 2 h. The crystal structure was investigated by X-ray diffraction with CuKα radiation at room temperature. As a function of composition, these compounds crystallize with tetragonal or cubic symmetry. Dielectric measurements show that the materials have a classical ferroelectric behavior for compositions in the range 0.10 ≤ x ≤ 0.15 and relaxor one for compositions in the range 0.15 < x ≤ 0.30. Temperatures T _C or T _m decrease as x content increases. The ferroelectric behavior has been confirmed by hysteresis characterization. For x = 0.1, a piezoelectric coefficient d ₃₁ of 42.146 pC N⁻¹ was obtained at room temperature. The evolution of the Raman spectra was studied as a function of temperature for x = 0.1.     

Electrical properties and microstructure of CdxHg1 ? x ? yCrySe crystals

Crystals of the Cd _x Hg_{1 − x − y} Cr _y Se (x = 0.4, y = 0.1) quaternary solid solution have been grown by the Bridgman method, and their microstructure and electrical properties have been studied. The crystals are shown to contain various types of inclusions in the form of filaments and triangles.