Raman Study of Glasses of Ba2TiSi2O8 and Ba2TiGe2O8

Raman spectra are reported for fresnoite (Ba₂Ti(Si,Ge)₂O₈ glasses, and comparison is made between the Raman spectra of the corresponding crystalline powders and glasses of Ba₂TiSi₂O₈ and Ba₂TiGe₂O₈. The Ba₂TiGe₂O₈ glass spectra show correspondence with the Ba₂TiGe₂O₈ crystalline Raman spectra; the v _s(Ge–O–Ge) mode occurs at 518 cm⁻¹ in the glass and at 521 cm⁻¹ in the crystalline material. Five-fold coordinated titanium is the majority species present in the Ba₂TiGe₂O₈ glass as revealed by a strong band at 824 cm⁻¹ in the I glass spectrum. The Ba₂TiSi₂O₈ glass spectra are similar to the Ba₂TiSi₂O₈ crystalline spectrum; the strongest band is found at 836 cm⁻¹ in the I glass spectrum. Through comparison with the previous Raman data of other titania silicate glasses, we conclude that the Ba₂TiSi₂O₈ glass has a structure similar to the crystalline phase.     

Thermochemistry and Aqueous Durability of Ternary Glass Forming Ba-Titanosilicates: Fresnoite (Ba2TiSi2O8) and Ba-Titanite (BaTiSiO5)

Barium titanosilicates are possible oxide forms for the immobilization of short-lived fission products in radioactive waste. Ba₂TiSi₂O₈ (fresnoite) and BaTiSiO₅ (Ba-titanite) samples were prepared by a solid-state synthesis. The enthalpies of formation of Ba₂TiSi₂O₈ crystal and glass at 25°C and of BaTiSiO₅ glass were obtained from drop solution calorimetry in a molten lead borate (2PbO–B₂O₃) solvent at 701°C. The enthalpy of formation for fresnoite composition samples from constituent oxides was exothermic and became more exothermic with increasing crystallinity. Differential scanning calorimetry revealed that the crystallization rate of the fresnoite glasses increased with increasing devitrification. A modified Product Consistency Test-Procedure B (PCT-B) was used to collect solubility data on the fresnoite and titanate phases. The tests suggest that both glassy and crystalline fresnoite exhibit favorable aqueous stability and should be explored further as radioactive waste forms for long-term storage.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Crystallization Kinetics and Dielectric Properties of Fresnoite BaO–TiO2–SiO2 Glass–Ceramics

Nucleation and crystallization kinetics of fresnoite (Ba₂TiSi₂O₈) crystals in BaO–TiO₂–SiO₂ glasses have been explored for dielectric applications. The volume fractions crystallized at different temperatures and times were tracked by XRD analysis. The activation energy of crystallization was estimated from DTA results to be about 528 kJ/mol, which is consistent with the value obtained by XRD results. The Avrami parameter values calculated at different temperatures from DTA results were found to be between 3.2 and 3.9, indicating that the growth is three dimensional and the mechanism of growth is interface-controlled. Additionally, because of compositional similarities, the dielectric contrast between the glass (ɛ_r∼15) and the resulting glass–ceramic (ɛ_r∼18) was minimal.     

Grain-Oriented Glass-Ceramics for Piezoelectric Devices

Grain-oriented glass-ceramics of Li₂Si₂o₅, fresnoite (Ba₂TiSi₂O₈), and its isomorphs Sr₂TiSi₂O₈, and Ba₂TiGe₂O₈, were prepared by recrystallizing glasses in a temperature gradient. Electromechanical and hydrostatic piezoelectric properties of these glass-ceramics were measured. Piezoelectric voltage coefficients g₃₃ and hydrostatic voltage coefficient g_h of these glass-ceramics are comparable to those of polyvinylidene fluoride and an order of magnitude higher than the corresponding values of lead zirconate-titanate. These glass-ceramics seem to be attractive candidate materials for hydrophones and several piezoelectric devices. Hydrostatic piezoelectric properties of Ba₂TiSi₂O₈ and Ba₂TiGe₂O₈ single crystals were also measured. The unusually high values of g_h in fresnoite single crystals and glass-ceramics are supposed to be due to positive d₃₁ in these materials. A composite model is proposed to explain the positive sign of d₃₁ in fresnoite based on its crystal structure and internal Poisson's ratio stress.     

Factors Affecting the Formation of Ba2Ti9O20

The phase development sequence based on a composition equivalent to Ba₂Ti₉O₂₀ during heating is found to be in the following order: BaTi₅O₁₁ > BaTi₄O₉ > Ba₂Ti₉O₂₀. The lowest rate of formation of Ba₂Ti₉O₂₀ is caused by its high surface energy and interface energy, which result in a low nucleation rate. The existence of BaTi₅O₁₁ in calcined powder helps to form Ba₂Ti₉O₂₀ in sintered compacts. The effect of BaTi₅O₁₁ on Ba₂Ti₉O₂₀ formation can be explained by their similar oxygen packing and by reduced volume change during transformation. The amount of BaTi₅O₁₁ formed during heating depends greatly on the compositional homogeneity of powders. The addition of SnO₂ aids the formation of Ba₂Ti₉O₂₀ by reduced strain energy at transformation and reduced surface energy.     

Effects of B2O3 on the Phase Stability of Ba2Ti9O20 Microwave Ceramic

Preparation of dense and phase-pure Ba₂Ti₉O₂₀ is generally difficult using solid-state reaction, since there are several thermodynamically stable compounds in the vicinity of the desired composition and a curvature of Ba₂Ti₉O₂₀ equilibrium phase boundary in the BaO–TiO₂ system at high temperatures. In this study, the effects of B₂O₃ on the densification, microstructural evolution, and phase stability of Ba₂Ti₉O₂₀ were investigated. It was found that the densification of Ba₂Ti₉O₂₀ sintered with B₂O₃ was promoted by the transient liquid phase formed at 840°C. At sintering temperatures higher than 1100°C, the solid-state sintering became dominant because of the evaporation of B₂O₃. With the addition of 5 wt% B₂O₃, the ceramic yielded a pure Ba₂Ti₉O₂₀ phase at sintering temperatures as low as 900°C, without any solid solution additive such as SnO₂ or ZrO₂. The facilities of B₂O₃ addition to the stability of Ba₂Ti₉O₂₀ are apparently due to the eutectic liquid phase which accelerates the migration of reactant species.     

The Crystallization of Ba-Substituted CsTiSi2O6.5 Pollucite Using CsTiSi2O6.5 Seed Crystals

Barium (Ba)-substituted CsTiSi₂O_6.5 materials of two types, Cs _x Ba_{1− x} TiSi₂O_{(7− x /2)} and Cs _x Ba_{(1− x )/2}TiSi₂O_6.5 were synthesized with the pollucite structure with 1≥ x ≥0.6. When the Ba-substituted precursor materials were heat treated to 850°C for 4 h, a mixture of amorphous and unidentifiable phases formed. However, with the addition of 10 wt% of crystalline CsTiSi₂O_6.5 to the Ba-containing precursors, nearly single-phase pollucite was obtained after 20 h at 750°C for x ≥0.6. The added crystalline CsTiSi₂O_6.5 particles act as nuclei that allow the Ba-containing materials to crystallize into the pollucite phase and to avoid the formation of unwanted phases that would otherwise nucleate and grow. These new materials can be used to study the stability of CsTiSi₂O_6.5 as a durable ceramic waste form, which could accommodate with time both Cs and its decay product, Ba.     

Comment on "Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20"

in a recent article of the Journal , Yu et al .¹ reported their experimental results on the effect of Al₂O₃ and Bi₂O₃ on the formation mechanism of Sn-doped Ba₂Ti₉O₂₀. They claimed that both Al₂O₃ and Bi₂O₃ can dramatically assist the formation of Sn-doped Ba₂Ti₉O₂₀ but are based on different mechanisms. They concluded that first, Bi₂O₃ melts above 830°C and accelerates the migration of the involved reactants to form Ba₂Ti₉O₂₀; second, Al₂O₃ can reduce the height of the potential energy barrier of the formation of Ba₂Ti₉O₂₀ due to the intergrowth of BaAl₂Ti₆O₁₆ phase. They explained their results from a point of view that the formation of Ba₂Ti₉O₂₀ is controlled by (1) the migration of reactants to the interfaces and (2) the height of the potential-energy barrier of the reaction at the interfaces. However, based on their results, we feel their conclusions are incautious and may be misleading, as will be discussed later.     

Phase Equilibria in the TiO2-Rich Region of the System BaO-TiO2

Phase relations in the system BaO-TiO₂ from 67 to 100 mol% TiO₂ were investigated at 1200° to 1450°C in O₂. Data were obtained by microstructural, X-ray, and thermal analyses. The existence of the stable compounds Ba₆Ti₁₇O₄₀, Ba₄Ti₁₃O₃₀, BaTi₄O₉, and Ba₂Ti₉O₂₀ was confirmed. The compound BaTi₂O₅ is unstable and either forms as a reaction intermediate below the solidus or crystallizes from the melt. The compounds Ba₆Ti₁₇O₄₀ and Ba₄Ti₁₃O₃₀ decompose in peritectic reactions, and BaTiO₃ and Ba₆Ti₁₇O₄₀ react to form a eutectic. Special conditions are required for the formation of Ba₂Ti₉O₂₀, which decomposes in a peritectoid reaction at 1420°C. The new phase diagram is presented.     

Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20

High-performance Ba₂Ti₉O₂₀ ceramics are attracting great attention, but their formation mechanism still is somewhat unclear. The present investigation shows that the formation of Ba₂Ti₉O₂₀ can be promoted strikingly by the participation of Bi₂O₃ and Al₂O₃. The effect of Bi₂O₃ on the formation of Ba₂Ti₉O₂₀ is attributed to the fact that migration of the involved reactants is accelerated by liquid which forms from the melting of Bi₂O₃ above 830°C. This migration, however, is not the only rate-limiting factor. A high potential-energy barrier, resulting from stress that arises along the crystal-structured layers, also heavily restricts the formation of Ba₂Ti₉O₂₀. The participation of Al₂O₃, on the other hand, can reduce the height of this potential-energy barrier and effectively improve the kinetics of the formation of Ba₂Ti₉O₂₀ by causing the formation of BaAI₂Ti₆O₁₆ crystals; these crystals intergrow with Ba₂Ti₉O₂₀ crystals and result in decreased stress.     

Ba2Ti9O20 Phase Equilibria

The heterogeneous phase distribution found in Ba₂Ti₉O₂₀ ceramic resonators results from a temperature-dependent phase boundary and slow reaction kinetics. When sintered at 1350°C or higher in oxygen the Ba₂Ti₉O₂₀ phase becomes slightly reduced and barium-rich. Thus a stoichiometric composition forms rutile and "Ba₂Ti₉O₂₀'phase. On slow cooling the excess barium diffuses to the oxygen-rich surface where it reacts to form an envelope of rutile-free material surrounding a core containing a small amount of rutile.     

Phase Relations in the System Na2O-TiO2-SiO2

Liǵuid us and subsolidus phase relations were studied using the quenching technique. The system contains four ternary compounds stable to liquidus temperatures: Na₂TiSi₄O₁₁, Na₂TiSi₂O₇, Na₂TiSiO₅, and Na₂Ti₂Si₂O₉. Six eutectics, eight peritecties, and eight thermal maxima were located and a region of liquid immiscibility was delineated. X-ray powder data are given for the stable and metastable crystalline phases. Glass-transition temperatures were determined by thermal analysis. The relation between physical properties of melts and glasses and the configuration of the liquidus is discussed.     

Formation Mechanism and Synthesis of Apatite-Type Structure Ba2+xLa8−x(SiO4)6O2−δ

The formation process of Ba₂La₈(SiO₄)₆O₂ was clarified using thermogravimetry–differential thermal analysis (TG-DTA) and a high-temperature powder X-ray diffraction (HT-XRD) method. Phase changes identified from the HT-XRD data surprisingly corresponded to the weight loss and/or endothermic peaks observed in the TG-DTA curves. Raw material with the composition Ba₂La₈(SiO₄)₆O₂ was completely reacted at 1400°C and produced only an apatite-type compound without a secondary phase. Moreover, the synthesis of Ba_{2+ x} La_{8− x} (SiO₄)₆O_2−δ crystals with x = 0–2 was attempted using a solid-state reaction.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

High-Temperature Transmission Electron Microscopy and X-Ray Powder Diffraction Studies of Polymorphic Phase Transitions in Ba4Nb2O9

Polymorphic phase transitions in Ba₄Nb₂O₉ were studied by thermal analyses, high-temperature transmission electron microscopy and X-ray powder diffractometry. Two stable polymorphs were isolated, low-temperature α-modification and high-temperature γ-modification, with the endothermic phase transition at 1176°C. The α→γ transformation is accompanied by the formation of a 120° domain structure, which is a consequence of hexagonal→orthorhombic unit cell reconstruction. Reheating the presintered γ-Ba₄Nb₂O₉ results in the formation of a metastable γ'-modification (formerly known as β-polymorph) in the temperature range between 360° and 585°C, before the γ→α transformation at 800°C. Above ∼490°C Ba₄Nb₂O₉ becomes moderately sensitive to a loss of BaO. In air the surface of Ba₄Nb₂O₉ grains decomposes to nanocrystalline Ba₅Nb₄O₁₅ and BaO, which instantly reacts with atmospheric CO₂ to form BaCO₃. Surface reaction delays γ→α transformation up to 866°C in air. In vacuum the loss of BaO is even more enhanced and consequently the formation of minor Ba₃Nb₂O₈ phase is observed above 1150°C.     

Preparation of Ba2YCu3O7-δ Thin Films with Preferred Orientation through an Organometallic Route

Superconducting Ba₂YCu₃O_7-δ thin films were prepared through an organometallic route. Single-phase Ba₂YCu₃O_7-δ thin films with preferred orientation were successfully prepared on SrTiO₃ (100) single-crystal substrates at 800°C by a dip coating method using partially hydrolyzed Ba-Y-Cu organometallic solutions. Preferentially oriented Ba₂YCu₃-O_7-δ thin films were also prepared on MgO (100) substrates. By controlling the partial hydrolysis conditions, a coating solution for precursor thin films was kept accurately at the stoichiometric composition. The use of ozone gas during the pyrolysis of the precursor thin films was found to suppress the formation of BaCO₃. Ba₂YCu₃O_7-δ thin films with c -axis orientation perpendicular to a SrTiO₃ (100) substrate, which were heat-treated at 900°C for 15 min, exhibited a superconductivity transition with an onset of 90 K and an end of 75 K.     

Ba8ZnTa6O24: A New High Q Dielectric Perovskite

The hexagonal perovskite, Ba₈ZnTa₆O₂₄, was prepared in single-phase form and was found to be a stable secondary phase, formed as a result of the loss of ZnO from Ba(Zn_1/3Ta_2/3)O₃ microwave dielectrics. The experimental and calculated X-ray patterns of Ba₈ZnTa₆O₂₄ indicate it is isostructural with Ba₈Ta₆NiO₂₄ with an 8H (cchc)₂ close-packed BaO₃ stacking sequence and the lattice parameters, a =10.0825(14), c =19.0587(38)Å. High-density ceramics of Ba₈ZnTa₆O₂₄ could be prepared at temperatures considerably lower (1400°C) than those used to sinter pure Ba(Zn_1/3Ta_2/3)O₃, and exhibit very good microwave dielectric properties with ɛ=30.5, Q _f=62 300, and τ_f=+36 ppm/°C at 8.9 GHz.     

Microwave Properties of Ba2Ti9O20 Doped with Zirconium and Tin Oxides

The effects of solid-solution additives, their concentration, and the thermal processing schedule on the microstructure evolution and microwave properties of Ba₂Ti₉O₂₀ were studied. The solubility of tin in Ba₂Ti₉O₂₀ was higher than that of zirconium. Both elements facilitated the formation of phase-pure Ba₂Ti₉O₂₀ resonators. Ba₂Ti₉O₂₀ formed most easily with low dopant concentrations (0.82 mol%) (most impressively for ZrO₂ substitutions). Extended heat treatment (16 h versus 6 h at a temperature of 1390°C) resulted in volatilization of the grain-boundary liquid phase, which leads to more-porous resonators that have correspondingly lower permittivities. Increasing the dopant concentration resulted in minor increases in the quality factor; doping with zirconium led to slightly higher values (a maximum of 13900 at a frequency of 3 GHz). Increasing the measurement temperature degraded the quality factor (most precipitously for BaTi₄O₉). The temperature coefficient decreased as the ZrO₂ substitution increased but was largely unaffected by the SnO₂ concentration. Excess TiO₂ in a batch with no other dopants demonstrated degraded microwave properties.     

Synthesis of Celsian (BaAl2Si2O8) from Solid Ba-Al-Al2O3-SiO2 Precursors: I, XRD and SEM/EDX Analyses of Phase Evolution

An intimate Ba-Al-Al₂O₃-SiO₂ powder mixture, produced by high-energy milling, was pressed to 3 mm thick cylinders (10 mm diameter) and hexagonal plates (6 mm edge-to-edge width). Heat treatments conducted from 300° to 1650°C in pure oxygen or air were used to transform these solid-metal/oxide precursors into BaAl₂Si₂O₈. Barium oxidation was completed, and a binary silicate compound, Ba₂SiO₄, had formed within 24 h at 300°C. After 72 h at 650°C, aluminum oxidation was completed, and an appreciable amount of BaAl₂O₄ had formed. Diffraction peaks consistent with hexagonal BaAl₂Si₂O₈, BaAl₂O₄, β-BaSiO₃, and possibly β-BaSi₂O₅ were detected after 24 h at 900°C. Diffraction peaks for BaAl₂O₄ and BaAl₂Si₂O₈ were observed after 35 h at 1200°C, although SEM analyses also revealed fine silicate particles. Further reaction of this silicate with BaAl₂O₄ at 1350° to 1650°C yielded a mixture of hexagonal and monoclinic BaAl₂Si₂O₈. The observed reaction path was compared to prior work with other inorganic precursors to BaAl₂Si₂O₈.