共查询到20条相似文献,搜索用时 31 毫秒
1.
The sputtering yield of the Si3N4 thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium (Ga) and Arsenic (As) ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82° and 84°. 相似文献
2.
3.
运用SRIM2006软件对Nd2Fe14B靶溅射过程进行了模拟,并就入射离子的入射能量和角度进行了分析,得到溅射产额与入射离子能量、入射角度以及溅射靶材的一般规律:1)溅射产额随着入射离子能量的增加而增加,在低能量区域增加很快,到了高能量区域增加变缓;2)溅射产额随着入射离子入射角度的增大逐渐增大,且在70°~80°出现极大值,如当入射离子的入射角度为75°,入射离子能量为7 keV时,溅射产额可达4.398(原子.离子–1);3)溅射原子的摩尔比与靶材原子摩尔比存在一定偏差,导致薄膜成分与靶材成分不一致。 相似文献
4.
5.
6.
In the laser warning system, a non-mechanical scanning Fabry-Perot (F-P) type laser warning method and its crucial component-laser
incident sensor design method are brought out, and the F-P etalon with the interferometric filter combination is adopted.
For the incident laser pulse with a certain wavelength, the transmittance difference of the interferometric filters is independent
with polarization of incident light, and descends almost linearly as the incident angle gets wider. A laser incident angle
sensor experimental platform is built up, and the experiment is carried out with a given laser range finder. As the results
indicate, when the incident angle is less than 5°, the transmittance difference measured by the laser angle sensor is significantly
lower, and the deviation is more than 10%. While the incident angle is greater than 10°, the deviation is reduced significantly. 相似文献
7.
We performed Monte Carlo simulation of helium (He) ion induced secondary electron (SE) emission in order to compare the secondary electron image characteristics between He and gallium (Ga) scanning ion microscopes (SIM) and scanning electron microscope (SEM). For 10-50 keV He ion bombardment SE yield increases gradually with increasing the atomic number, Z2, of the target, as well as for the electron bombardment. However, for 30 keV Ga ion bombardment, SE yield shows an opposite Z2 dependence. The calculated SE yield is much larger than that for both electron and Ga ion bombardment. The incident angle dependence of the SE yield approximately obeys the inverse cosine law even at high angles of 85 degrees and more. On the other hand, for electron bombardment, the incident angle dependences are much weaker for low energy and high Z2. These indicate that the image contrast on He-SIM is clearer than those of SEM. Among the electron excitations by incident He ions, recoiled target atoms and excited electrons, the first one having narrow excitation volume dominates the SE yield, so that the spatial image resolution in SIM using zero-diameter He beams with the energies of 10-50 keV is prospected to be smaller or better (<0.1 nm) than for 30 keV Ga ion and 1 keV electron beams. 相似文献
8.
A tunable photonic crystal filter with a twisted nematic liquid crystal layer is proposed. The defect modes spectra with varying
incident angles are discussed in detail by 4×4 matrix method. The results show that the defect modes are mainly decided by
the applied voltage when the incident angle is smaller than 8°. As the incident angle further increases, the band gap and
the defect modes shift toward the shorter wavelength side, and the changes of the two modes are different. In the lower voltage
range, the defect modes can be tuned not only by the applied voltage but also by the incident angle. In the higher voltage
range, the defect modes can be further tuned by varying incident angle and the different modes can be separated from each
other by a big incident angle. 相似文献
9.
非同向互作用声光可调谐滤光器的立体角孔径 总被引:2,自引:0,他引:2
本文同时考虑了入射光极角方向的发散角⊿θ1和方位角方向的发散角⊿θ;,由此分析了非同向互作用声光可调谐滤光器的立体角孔径,并发现对应于同一超声离轴角θa,当光线入射角θ1取较小值时,立体角孔径近似为双曲线形,并且在四个方向上角孔径变得很大,表现出高度的各向异性。本文还考虑了超声离轴角θa对入射光角孔径的影响,发现当入射光的角孔径满足一定的条件以后,θa的改变对器件性能的影响不大。 相似文献
10.
薄膜干涉型光学全通滤波器的设计与分析 总被引:1,自引:0,他引:1
设计并分析了用于多信道色谱补偿的薄膜Gires-Tournois干涉仪(GTI)型光学全通滤波(OAPF),讨论了反射镜的膜层结构对器件 的群延迟谱和反射谱的影响,。以及大角度入射引起的偏分离现象和幅度畸变现象,给出了单级和多级串拉OAPF的初步设计结果。 相似文献
11.
利用复折射率的方法和膜系设计软件TFcalc分别研究了入射角和杂质吸收对一维光子晶体反射镜反射谱和透射谱的影响.结果表明:随着入射角的增大,一维光子晶体反射镜的禁带中心位置蓝移,禁带宽度减小.入射角小于60°时,带隙势阱深度几乎不变,大于60°后带隙势阱深度变化较大.当入射角无限接近90°时,P偏振光的带隙几乎消失,S偏振光的带隙几乎保留.杂质吸收对于一维光子晶体的反射谱和透射谱显著影响时的临界消光系数值分别是0.001和0.0003.高折射率介质层的杂质吸收对光谱的影响较小. 相似文献
12.
利用特征矩阵法研究了多腔薄膜梳状滤波器在C波段的透射峰在入射角微小变化中的变化规律,结果表明:在入射角缓慢增大的过程中,各透射峰的位置逐渐向短波方向移动,各透射峰的形状周期性地变化;随着入射角的增大,透射峰个数减少,透射峰变宽,透射峰的位置和形状变化加快,以至于极小的入射角变化就会使透射峰的位置和形状产生很大的变化。 相似文献
13.
14.
为了探究入射光偏振态对四频差动激光陀螺法拉第片最佳入射角的影响,建立四频差动激光陀螺法拉第片三光束干涉的琼斯矩阵,利用计算机进行数值计算,模拟圆偏振光和椭圆偏振光在陀螺仪内的传播方程,并通过搜索不同入射角情况下-40℃~80℃温度范围内磁圆二向色性差分损耗的振幅最小值来选取最佳入射角。结果表明,圆偏振模式下和椭圆偏振模式下法拉第片的最佳入射角有一定差别,这种差别足以影响到激光陀螺仪的测量精度,因此在安装法拉第片时应考虑入射光偏振态对其最佳入射角的影响;此外,法拉第片的最佳入射角与入射光s分量(垂直于入射面)、p分量(平行于入射面)在反射镜上的反射相位差以及反射镜的反射系数均有关。 相似文献
15.
研究了GaAs/AlGaAs多量子阱(MQW)空间光调制器(SLM)在不同入射角度下的调制特性。对腔模位置与入射角度的关系进行了理论计算和实验验证,两者具有较好的一致性。当入射角在0°~75°之间变化时,腔模从871nm变化至845nm,可调节范围达26nm。当入射光从垂直入射变化为约45°入射时,SLM对比度从(CR)3.8提高到16.3,调制电压从9.5V下降至6.5V。理论分析和实验结果表明,入射角度调节能够有效提高GaAs/AlGaAs MQW SLM调制性能。 相似文献
16.
17.
F. Aqariden W. M. Duncan H. D. Shih L. A. Almeida M. J. Bevan 《Journal of Electronic Materials》1999,28(6):756-759
The effect of incident angle in spectral ellipsometry (SE) on composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE) was investigated. Although a small uncertainty in the incident angle tends to have
a significant impact on the ellipsometric data, and therefore the composition data, it was found that the incident angle uncertainty
could be corrected in the SE model calculation, resulting in an “optimized” incident angle that would give the best fit between
measured and calculated ellipsometric data. Experimental data supporting this simple corrective or optimization procedure
for the incident angle are presented. 相似文献
18.
双层等折射率浮雕结构共振布儒斯特滤光片的泄漏模特性 总被引:1,自引:1,他引:0
通过调整光栅的填充系数,获得具有均质层和光栅层等效折射率相等的表面浮雕结构共振布儒斯特滤光片.深入研究了这类滤光片的泄漏模特性,并讨论光栅参数和入射条件的变化对滤光片共振特性的影响.研究表明:入射角的改变对滤光片泄漏模特性的影响不明显,但填充系数、均质层厚度以及基底折射率的改变对滤光片泄漏模特性影响很大.当填充系数f→1和f<0.6时,以及当基底折射率接近波导层折射率(n→1.63)时,导模共振效应趋于消失.此外,随着均质层厚度的不断增大,多模共振效应将被激发,从而在一定的波长或入射角范围内导致多个泄漏模共振效应的产生. 相似文献
19.
针对L型阵列2维波达角(2D-DOA)估计问题,该文提出了一种新的基于秩减估计器的算法。该算法利用辅助角将2D-DOA估计问题转换为两个级联的1D-DOA估计问题:首先采用基于传播算子的秩减估计器获得高精度的辅助角估计;其次利用辅助角估计结果获得某一入射角的一元代价函数,借鉴root-MUSIC算法通过对多项式求根获得某一入射角估计,而另一入射角估计可由已得角度估计和辅助角估计通过简单转换获得且两入射角之间无需配对。运算量分析表明,该算法运算量与JEADE算法接近,大于CODE和root-MUSIC算法。仿真实验验证了该算法在不同信噪比、快拍数目条件下可获得高精度的DOA估计结果。 相似文献
20.
正入射通常不能反映成像衍射光学元件的实际工作状态,斜入射才是其普遍工作状态。建立了斜入射时三层衍射光学元件的衍射效率与入射角度关系的表达式。针对入射方向、两侧基底材料以及中间介质材料这三个影响因素,分析了三层衍射光学元件的衍射效率随入射角度的变化关系。结果表明,光线从正谐衍射元件端入射时,对应的衍射效率随入射角度增大下降得比较缓慢。组成三层衍射光学元件两侧谐衍射元件基底材料的阿贝数差值越大,衍射效率随入射角度增大下降得越缓慢。中间介质材料的选取由三层衍射光学元件工作时的入射角度范围决定。该分析方法和结论适用于可见光、红外等光学系统中的三层衍射光学元件。 相似文献