The effects of an applied magnetic field on the oscillation of a silicon avalanche diode

The observed effects of an applied magnetic dc field on the oscillation of a p-i-n CW silicon avalanche diode oscillating near 11 GHz at room temperature are described. Near oscillation threshold, the applied magnetic field increases the RF power output significantly and the frequency of oscillation slightly, but has little effect at higher output levels.     

聚合电场频率对聚合物稳定胆甾相液晶光电性能的影响

研究了聚合时外加电场对聚合物稳定胆甾相液晶(PSCT)光电性能的影响。采用紫外光聚合诱导相分离法(PIPS)制备了聚合物稳定胆甾相液晶,通过改变光聚合时的外加电场频率控制聚合物网络结构,改善PSCT的光电性能。结果表明:电场频率影响聚合单体的扩散,从而影响聚合物网络形貌。聚合电场频率低,聚合单体扩散快,形成的聚合网络疏松,网孔较大,响应速度慢,关态透过率大,阈值和饱和电压小;聚合电场频率高,阻碍单体的扩散,形成的聚合物网络致密,网孔较小,响应速度快,关态透过率低,阈值电压和饱和电压大。     

新型三维视觉测量结构光平面标定方法

结构光平面标定是结构光三维视觉测量中的重要环节。传统的标定方法需要昂贵的设备,效率低下,步骤复杂。提出了一种新的三维视觉系统中结构光平面的标定方法。该方法仅使用一个简单的二维平面靶标,在保证靶标与结构光相交的前提下,靶标在摄像机可视范围内自由移动数个位置。对于移动到各个位置的靶标平面,分别建立对应的世界坐标系,并计算该世界坐标系与摄像机坐标系、图像坐标系的转换关系。通过处理算法,可以将每一个位置得到的结构光平面与靶标平面的交线方程统一到摄像机坐标系下。使用最小二乘法拟合多条交线可以标定出结构光平面在摄像机坐标系下的方程。实验证明该方法效率高,步骤简单,具有很好的通用性。     

半绝缘GaAs光电导开关中光激发电荷畴的猝灭畴模式

在半绝缘GaAs光电导开关中发现了光激发电荷畴的猝灭畴模式. 分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的,并指出在开关电场低于非线性光电导开关阈值电场条件下,在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率. 根据开关工作电路条件及畴特性给出了猝灭畴模式的等效电路,计算了相应的电路参数,计算结果与实验基本吻合. 该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.     

半绝缘GaAs光电导开关中光激发电荷畴的猝灭畴模式

在半绝缘GaAs光电导开关币发现了光激发电荷畴的猝灭畴模式.分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的,并指出在开关电场低于非线性光电导开关阈值电场条件下,在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率.根据开关上作电路条件及畴特性给出了猝火畴模式的等效电路,计算了相应的电路参数,计算结果与实验基本吻合.该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.     

Generation of electromagnetic radiation based on nanotubes under a constant electric field and an electromagnetic wave field

The possible generation of radiation in the millimeter range based on nanotubes by an alternating (rapidly oscillating) electric field under a constant (or nonstationary) electric field is studied. Radiation enhancement is based on a periodic dependence of the current in nanotubes in such electric fields. The results of a mathematical simulation are presented.     

Human Body Impedance and Threshold Currents for Perception and Pain for Contact Hazard Analysis in the VLF-MF Band

The body impedance and threshold currents needed to produce sensations of perception and pain have been measured for 367 human subjects for the frequency range 10 kHz to 3 MHz. A sufficient number of subjects (197 male and 170 female subjects of ages between 18 and 70 years) were utilized in the study to make valid statistical predictions for the general adult population. Various types of contact with metallic electrodes were used to simulate the situation where a human being would be in contact with a large metallic object (car, van, school bus, etc.) in an electromagnetic field in the VLF to MF band. Based on these measurements, it is speculated that the body impedance of a human being is inversely proportional to the body dimensions and the threshold current for perception is directly proportional to the square of the body dimensions. Predictions are made, based on scaling, for the corresponding threshold values for ten-year-old children. The average measured impedance and threshold current values are used to calculate threshold electric fields required to produce sensations of perception and pain in humans in contact with these vehicles. It is concluded from these calculations that many situations can exist in which the present ANSI (American National Standards Institute) recommended standard of 632 V/m for the frequency band 0.3-3 MHz is too high.     

Theory of optical-waveguide distributed feedback lasers: A Green's functions approach

The total scattered electric field of a periodic dielectric optical waveguide is derived in terms of the Green's functions of the unperturbed structure. A condition for self-excitation that takes into account the coupling between radiation and guided modes is obtained in a very general manner and, therefore, is valid for arbitrary periods of the grating structure. Results show that the effect of the coupling between the oscillating guided field and radiation modes is to change the dependence of the threshold gain on the amplitude of the periodic perturbation: increasing the depth of the grating beyond an optimum value causes an increase in threshold due to larger coupling to radiation modes.     

On the Phenomenon of Oscillations in the Method of Auxiliary Sources

When one applies the method of auxiliary sources to scattering problems involving perfect conductors, one first seeks fictitious auxiliary currents located inside the conductor, and then determines the field from these currents. For a simple two-dimensional problem involving an infinite circular cylinder illuminated by an electric current filament, it has recently been shown analytically that it is possible to have divergent auxiliary currents (to make this statement precise, one must properly normalize the currents), together with a convergent field. It was also shown-through numerical investigations-that the aforementioned divergence appears as abnormal, rapid oscillations. In the present paper, we investigate such phenomena in more detail, with particular emphasis on oscillations. For a perfectly conducting ground plane illuminated by an electric current filament, we once again demonstrate the possibility of having divergent, oscillating currents producing a convergent field. We develop an asymptotic formula for the oscillating current values, which sheds light on the nature of the oscillations. We revisit the circular-cylinder problem to develop a similar asymptotic formula. We also discuss roundoff errors, and possible generalizations to scatterers of other shapes. The present study is to a great extent analytical, with the analytical predictions confirmed and supplemented by numerical results     

双掺杂多晶Si栅MOSFET的截止频率研究

在前期对双掺杂多晶Si栅(DDPG)LDMOSFET的电场、阈值电压、电容等特性所作分析的基础上,仍然采用双掺杂多晶Si栅结构,以低掺杂漏/源MOS(LDDMOS)为基础,重点研究了DDPG-LDDMOSFET的截止频率特性.通过MEDICI软件,模拟了栅长、栅氧化层厚度、源漏区结深、衬底掺杂浓度以及温度等关键参数对器件截止频率的影响,并与相同条件下P型单掺杂多晶Si栅(p-SDPG)MOSFET的频率特性进行了比较.仿真结果发现,在栅长90 nm、栅氧厚度2 nm,栅极P,n掺杂浓度均为5×1019cm-3条件下,截止频率由78.74 GHz提高到106.92 GHz,幅度高达35.8%.此结构很好地改善了MOSFET的频率性能,得出的结论对于结构的设计制作和性能优化具有一定的指导作用,在射频领域有很好的应用前景.     

Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide

Simple models for threshold characteristics of surface-channel MOSFET's, which are fabricated on a buried oxide covered by an electric field shielding layer, are proposed. The electric field shielding effect is taken into account when the Poisson's equation is solved. Threshold voltage expressions are derived from the solution of the Poisson's equation and the surface-channel charge neutrality relationship. Theoretical analysis shows that the thinner silicon layer leads to enhancement of the electric field which results in the reduction of the short-channel effect.     

Magnetooptic mode splitting in an anisotropic laser cavity

The normal modes of an anisotropic laser resonator containing an intracavity Faraday rotator have been investigated. Below a threshold value of rotation, the Faraday cell rotates the electric field vector of the linearly polarized modes. Above this value, each axial mode splits into two elliptically polarized waves. The frequency difference of these modes is then dependent on the Faraday rotation angle. Experimental results obtained using a 3.39-μ He-Ne laser with two Brewster windows and a YIG intracavity Faraday cell are in agreement with the results calculated from a normal mode analysis.     

Switching a multistable solid-state laser from one stable steady state to another-dynamic stability analysis

The switching of a multistable laser from one stable steady state to the next has been studied using a longitudinally pumped laser with a nonlinear mirror. To achieve switching, use has been made of a second mode that is oscillating at the pump frequency. This pump mode is kept just below its threshold for oscillation. We find through an analysis of the dynamic gain functions of both the laser and pump modes that the steady state of the laser mode is very sensitive to changes in the steady state of the pump mode that are brought about by fluctuations in the pump intensity. It is found that for switching to be possible, the difference in frequency between the pump and laser mode should not be much larger than the linewidth of the laser atomic medium. We conclude that a conventionally pumped multistable and multimode solid-state laser can have one of its modes switched from one of its stable steady states to another such state, of a lower or higher intensity, by longitudinally injecting a pulse of suitable magnitude, frequency, and duration as a perturbation. This can happen provided that one of the other N-1 modes, which are kept below oscillation threshold, has been pushed by such a perturbation to just above threshold for oscillation in order that it couples with the oscillating laser mode. We have estimated the switching time to be less than the laser cavity photon decay time but of the order of the round-trip time in the Fabry-Perot cavity. The analysis also shows that the laser threshold intensity and its stability are not dependent on the difference between the frequencies of the pump and laser modes. However, the threshold is found to be sensitive to changes in the overlap parameter which is defined as a ratio of the beam waists.     

GaAs carrier wave growth in the presence of a thin resistive surface layer

Thin sheets of resistive material deposited on epitaxial GaAs in order to provide uniform electric field profiles are predicted to still allow microwave gain while suppressing instabilities at all lower frequencies. The gain threshold frequency depends upon the device thickness, the surface resistance of the resistive layer, etc. The mode exhibits a higher cutoff frequency beyond which the gain is not possible because of the severe diffusion losses. Broad-band gain is predicted in the 10-20 GHz range.     

非均匀分布的纳米银掺杂的聚合物分散液晶全息光栅等效电路建模

聚合物分散液晶全息光栅具有电场可调的特点,材料中掺杂纳米银颗粒,能够有效降低光栅的驱动电压.由于聚合动力学的影响,会造成纳米银颗粒在光栅中的非均匀分布,即纳米银在聚合物和液晶区分布含量不均匀,表现出不同的电场调控特性.通过等效电路建模的方法研究驱动电压阈值与所施加交流电场的频率之间的关系.根据Maxwell-Wagner效应建立纳米银分别被液晶和聚合物包围的等效电路模型,具体研究在液晶条纹中,纳米银含量占总纳米银比例不同的条件下,纳米银掺杂的聚合物分散液晶全息光栅的介电弛豫时间和弛豫振荡的频率数值变化,进一步调节驱动电场频率,获得更低的驱动电压阈值.通过最优驱动电场频率范围来初步确定纳米银在光栅中的分布结构,并证明纳米银颗粒集中在液晶条纹,少量分布在聚合物条纹中.     

ELF Electric Field Coupling to Dielectric Spheroidal Models of Biological Objects

The extremely low frequency (ELF) electric field coupling to dielectric spheroidal models of biological objects is studied. Simple expressions are obtained to determine the internal electric field strength induced inside two nonspherical spheroids; a prolate dielectric spheroid and an oblate dielectric spheroid. Certain numerical results are graphically presented for various geometric shapes of the spheroid. The results show that, unlike the symmetric dielectric sphere, the relative position of the spheroid with respect to the orientation of the impressed electric field is an extremely important parameter which considerably affects the electric field coupling.     

应用渐近波形估计技术快速计算宽带雷达散射截面

将渐近波形估计技术应用到矩量法中,计算了任意形状二维理想导体目标的宽带雷达散射截面.计算中使用矩量法和奇异值分解技术求解电场积分方程,得到一展开频率点的表面电流密度,通过Padé近似求出给定频带内任意频率点的表面电流密度分布,进而计算出散射场和雷达散射截面.奇异值分解技术的使用消除了电场积分方程的内谐振问题.对数值计算结果与矩量法逐点求解的结果进行了比较,两者吻合良好,且计算效率提高了约一个数量级.     

应用切比雪夫逼近快速求解目标宽带雷达散射截面

将切比雪夫逼近理论应用于目标宽带电磁散射特性分析中,通过求解给定频带内的切比雪夫节点和节点处的目标表面电流,实现了频带内任意频率点表面电流的快速预测,从而实现目标宽带雷达散射截面的快速计算.组合场积分方程的使用消除了内谐振问题.将计算结果与传统矩量法逐点计算的结果进行了比较,结果表明在不影响精度的前提下,该方法的计算效率大大提高.     

Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effect

Practical limitations of minimum-size MOS-LSI devices are investigated through measurement of experimental devices. It is assumed that scaled-down MOSFET's are limited by three physical phenomena. These are 1) poor threshold control which is caused by drain electric field, 2) reduced drain breakdown voltage due to lateral bipolar effects, and 3) hot-electron injection into the gate oxide film which yields performance variations during device operation. Experimental models of these phenomena are proposed and the smallest possible MOSFET structure, for a given supply voltage, is considered. It is concluded that the smallest feasible device has a channel length of 0.52 µm and a gate oxide thickness of 9.4 nm when the supply voltage is 1.5 V. Reliable threshold control is most difficult to realize in an MOS-LSI with the smallest devices.