A planar single-substrate AC plasma display

A novel method is described for constructing an acsustained gas-discharge display (plasma panel). Electrodes and insulating layers are applied alternatively on a single base substrate to produce a matrix of insulated crossovers. A second clear substrate is used to contain gas on the electrode side of the base substrate where glow discharge occurs. As in conventional two-substrate panels, internal memory is obtained by charge storage on the dielectric. The pulsed write and the sustain mechanisms of single- and twin-substrate display elements are discussed with regard to the effects of cell and field geometries. In the sustain mode, glow-propagation effects are observed, especially in the nonhomogeneous fields of the single-substrate design. Here cathode-type glows which form a narrow band are observed with a high-speed photomultiplier and shown to sweep across the dielectric surfaces. Luminance, intensity distributions, and luminous efficiency data are compared on small 10 × 10-line panels using single-substrate and conventional designs. A three- to four-fold improvement in luminance is achieved with the single-substrate geometry.     

New reset waveform for the contrast ratio improvement of AC-PDP

We propose a new reset waveform for the improvement of contrast ratio. A square pulse is applied to the address electrode while the reset pulse ramps and before the discharge between the sustain electrodes occurs. The square pulse induces a discharge between the address electrode and the X electrode, and the induced wall charge between the sustain electrodes is opposite to the applied ramping voltage between the sustain electrodes. Thus, the next discharge between the sustain electrodes becomes weaker. The weaker discharge during the reset period lowers background luminance and improves contrast ratio. The experimental results show that the contrast ratio can be improved by 35/spl sim/58% using this method compared with the conventional ramp reset method.     

Driving Characteristics of a High-Efficacy AC PDP With an Auxiliary Electrode

A new driving waveform was proposed in order to stabilize the driving characteristics of a high-efficacy AC plasma-display panel (PDP) with a coplanar gap of 200 mum and an auxiliary electrode. To stabilize the reset and address discharge, an erase pulse was applied to the auxiliary electrode instead of the sustain electrode after the sustain period. The write pulse was applied to the scan electrode, and a reset discharge was induced between the scan and auxiliary electrodes. As a result, the minimum address voltage could be reduced to a level similar to that achieved with a conventional ac PDP with a coplanar gap of 80 mum. Furthermore, the address-discharge time lag of the ac PDP with a coplanar gap of 200 mum was improved to a level that is comparable with that of the ac PDP with a coplanar gap of 80 mum.     

Negative Sustain Waveform for Improving Discharge Characteristics in AC Plasma Display Panel

The discharge characteristics produced by a negative sustain waveform were examined in comparison with those produced by a positive sustain waveform. An image-intensified charge-coupled device (ICCD) revealed that the negative sustain waveform produced a faster and stronger sustain discharge than the positive sustain waveform. Simulation results also showed that the fast and strong sustain discharge produced by the negative sustain waveform was induced due to the rapid acceleration of the negative wall charges, such as electrons, when applying the negative sustain waveform directly to the electrode with negative wall charges, such as electrons. As a result, the luminance and luminous efficiency were both improved by about 14% and 13%, respectively, with a negative sustain pulse of -180 V when compared to the results with a positive sustain waveform of 180 V.     

Study on discharge stability of cost-effective driving method based on V/sub t/ close-curve analysis in AC plasma-display panel

A new cost-effective driving method that can drive plasma-display panel cells without applying any driving waveform to the common electrode is proposed based on a V/sub t/ close-curve analysis. In this driving method, it is very important to prevent a misfiring discharge due to the inversion of the polarity of the wall charges accumulated between the scan and address electrodes. The measured V/sub t/ close-curve showed that a misfiring discharge caused by the polarity inversion phenomenon of the wall charges on the scan and address electrode could be prevented by minimizing the potential difference between the scan and address electrodes by applying a positive auxiliary pulse to the address electrode, especially while applying the positive sustain pulse during a sustain period. As a result, the proposed cost-effective driving method can reduce the driving cost by about 20% through eliminating the common driving board and successfully display various image patterns, such as the white, red, green, and blue patterns, on a 42-in plasma television without any misfiring discharge.     

A New AC Plasma Display Panel With Auxiliary Electrode for High Luminous Efficacy

A new ac plasma display panel (PDP) for high luminous efficacy is proposed, and its characteristics are investigated. The new ac PDP has a coplanar gap of 200 mum and an auxiliary electrode located between the scan and common electrodes. The periodic pulses are applied to the auxiliary electrode during the sustain period, which plays the roles of enhancing the infrared emission and reducing the discharge current. The sustain voltage decreases with the increase of the auxiliary pulse voltage until 80 V. When the voltage of the pulse applied to the auxiliary electrode is 50 V, the luminous efficacy reaches its peak value and is approximately 8.7 lm/W obtained from the measurement of Ne + 20% Xe gas-mixture discharges in the green cells. The luminous efficacy of the new proposed test ac PDP with Ne + 13% Xe and Ne + 20% Xe gas mixtures is improved by 190% and 320%, respectively, compared to that of the conventional ac PDP with a Ne + 13% Xe gas mixture     

集成电极的PDMS-玻璃微流控芯片的制备

微流控芯片在分析化学和生物检测方面有着广阔的应用前景。对集成电极的PDMS-玻璃微流控芯片的制备工艺进行了研究与分析。最终使用SU-8快速制备阳模,使用PDMS转移图形得到具有微流控通道的PDMS盖片;在玻璃基板上加工Pt电极,除了需要外露的部分电极外,其他部分以薄层PDMS保护,得到电极基板;将PDMS盖片与电极基板半固化键合制得同时具有加热和温度传导电极以及CE高压电极的PDMS-玻璃芯片。ANSYS模拟分析证明加热芯片热惯性小,加热时温度分布效果好。     

等离子体平板背光源单元放电特性的研究

采用粒子网格-蒙特卡罗碰撞(PIC-MCC)方法对等离子体平板背光源单元的放电过程进行了数值模拟,获得了放电过程中各带电粒子在空间区域的分布以及各区域的形成和性质,并结合模拟结果,详细分析了等离子体平板背光源单元的放电特性.结果表明,放电单元采用大电极间距可获得正柱区放电,正柱区的形成是正离子在阴极鞘层区不断积累将电位抬高所致.通过增加电极间距以增加正柱区的长度,可以有效地改善放电特性,从而提高背光源的发光效率.     

Au/Cd复合电极沉积方法对其与(111)面CdZnTe衬底接触性能的影响

CdZnTe晶片是HgCdTe外延薄膜的理想衬底。为了优化CdZnTe衬底的电学接触性能,作者基于真空蒸发法和磁控溅射法分别在p型导电性CdZnTe晶片(111)B (富碲面)制备Au/Cd复合电极。通过接触粘附试验,研究了复合电极的制备方法对电极与衬底之间的粘附性;利用卢瑟福背散射光谱法（RBS）比较了不同沉积方法下样品的元素深度分布;采用电流-电压(I-V)测试比较了两种制备工艺对Au/Cd复合电极与CdZnTe衬底欧姆接触特性的影响,从而确定了最佳复合电极的制备工艺。     

A new driving waveform to improve dark room contrast ratio in acplasma display panel

A high dark room contrast ratio is necessary for realizing good image quality in ac plasma display panels (PDP). However, the conventional PDPs have low dark room contrast ratio because the background light mainly results from the reset discharges between the address, scan, and sustain electrodes in every subfield. In this study, a new driving method [improved waveform of contrast ratio (ICR)] is suggested to enhance the dark room contrast ratio. The principle of ICR is that the facing discharges during the reset period occur between the scan and address electrodes instead of surface discharges by applying almost the same voltage waveform as the scan voltage to the sustain electrode after the conventional first subfield. Moreover, the reset discharge occurs only for the cells that experienced sustain discharge in the preceding subfield after the first subfield. The dark room contrast ratio of ICR is improved more than 7× as compared to the conventional method     

Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

The strained-Si-strained-SiGe dual-channel layer substrate is known for its mobility advantage. This letter investigates its potential as a CMOS substrate that would enable single workfunction metal-gate electrode technology. Simulation shows that a single metal electrode with workfunction of 4.5 eV produces near-ideal CMOS performance on a dual-channel layer substrate that consists sequentially of a silicon wafer, an epitaxially grown 30% Ge relaxed SiGe layer, a compressively strained 60% Ge layer, and a tensile-strained-Si cap layer. Measured threshold voltages in experimental TiN gate n- and p-MOSFETs built on such dual-channel layer substrates support the simulation analysis.     

Blooming characteristics of a solid-state imager overlaid with a photoconductor

The control mechanisms of blooming phenomena in a solid-state imager overlaid with a photoconductor have been analyzed. The device studied is composed of an interline transfer type of scanner and a thin-film heterojunction ZnSe-Zn1-xCdxTe photoconductor. Two types of operation exist depending on the dc voltage or the pulse voltage applied to the ITO electrode on the photoconductor and it has been proved that pulse mode operation is superior to dc mode to sustain normal sensitivity under blooming suppressed condition. From the analysis of the operation it is made clear that one condition for blooming control in this device is based upon the principle of biasing the photoconductor so that in strong light the readout transistor is held in the cut-off condition except during the readout period. In the case that this condition is met, additional blooming can still occur due to the carriers excited in the Si substrate by the light that passed through the photoconductor and through the gap area between the charge collecting electrodes. By special shielding the blooming control capability can be effective up to 1100 times the saturation exposure compared to 120 times without the special shielding. The remaining blooming signal is clearly shown to be due to photo-excited carriers in the photoconductor during the blanking period.     

An advanced sustaining technology for plasma display panel using voltage-balancing method

A cost-effective plasma display panel (PDP) sustainer employing current injection method (CIM) for energy recovery is proposed. Using a voltage-balancing technique, driver cost can be reduced by about 20%-30% compared with that of the conventional H-bridge driver by using low-voltage switches. The energy recovery performance can be improved by the current that is built up before the energy recovery operation. This buildup current is utilized to change the polarity of the panel electrode and provides additional variable to determine pulse slopes. Experimental results show that the voltage stress of switches connected in series is identically clamped to sustain voltage during sustain operation and that light is emitted more stably by independent control of the rising and falling slopes using CIM. Therefore, the proposed sustainer is expected to be suitable for a low-cost PDP sustaining driver requiring stable discharge characteristics.     

三角阵列电极的太赫兹光电导天线结构设计

光电导天线具有室温操作、紧凑设计和宽带辐射等优点,但辐射功率低限制了其广泛应用,其中低光吸收率是辐射功率低的主要原因之一。传统的天线电极无尖端结构,边缘电场弱,导致了低的光吸收率。为了提高光电导天线的辐射功率,设计了一种三角阵列天线电极结构,该电极结构由5个三角形尖端排列组成。使用时域有限差分(FDTD)方法研究了800 nm飞秒激光照射下电极的电场增强和衬底对光的吸收。此结构增加了激光入射到衬底的面积,并且减小了光载流子传输距离,在无电场情况下光的吸收率达到30.57%,相对于传统天线提高了161%。三角阵列电极结构为传统电极结构设计提供了新思路,有望与纳米结构结合进一步提高辐射功率。     

SiO2 degradation with charge injection polarity

We have investigated gate oxide degradation in metal-oxide-semiconductor (MOS) devices as a function of high-field constant-current stress for charge injection from both gate and substrate. The two polarities are asymmetric: gate injection, where the substrate Si-SiO₂ interface is the collecting electrode for the energetic electrons, shows a higher rate of interface-state generation (ΔD_it) and lower charge-to-breakdown Q_bd. Thus the collecting electrode interface, which suffers primary damage, emerges as a critical degradation site in addition to the injecting electrode interface, which has been the traditional focus. Consistent with a physical-damage model of breakdown, we demonstrate that interfacial degradation is an important precursor of breakdown, and that the nature of breakdown-related damage is physical, such as trap-generation by broken bonds     

Liquid crystal microlens arrays with switchable positive and negative focal lengths

A flat microlens array whose focal length can be switched from positive to negative by electric field is demonstrated experimentally and confirmed by computer simulations. To generate the required gradient refractive index, an inhomogeneous electric field is created by a spherical indium-tin-oxide (ITO) electrode which is imbedded in the top flat substrate. The bottom substrate has a planar ITO electrode on its inner surface. A thin polymeric layer is overcoated on top of the spherical ITO to create a flat surface. The disclination lines are eliminated. Because of the employed dual-frequency liquid crystal, the microlens array has fast response times.     

复合形法在PDP计算机仿真中的应用

采用复合形算法建立数学模型,以PDP三维模拟仿真软件为基础,以PDP放电效率为目标函数,以扫描电极宽度、氙气比例、气体压强和驱动电压为搜索变量,进行最优化设计来提高单元的放电效率.模拟结果表明:搜索变量坐标为(80,15,498,230)时,即扫描电极宽度、氙气比例、气体压强及维持电压分别为80 μm、15%、6.6×104Pa和230 V时,对应的放电效率取得最大值11.0%,比搜索变量坐标为(160,5,310,210)初始复合形时的放电效率提高一倍多,且真空紫外辐射能量也比初始复合形时增加79%.模拟结果表明采用复合形算法可以得出影响PDP放电性能的各因素的最优化组合,使PDP单元的放电效率和放电强度都大幅提高.     

基于MEMS技术的柔性多触点深部脑刺激电极研制

深部脑刺激可以有效治疗帕金森病、癫痫、抑郁等疾病。深部脑刺激电极是深部脑刺激系统中的重要组成部分,传统的四触点电极由于通道少,触点面积大,分辨率低,容易刺激不必要的区域从而引起副作用。为提高深部脑刺激的分辨率和精度,设计了一种具有24 个触点的深部脑刺激电极,并利用微机电系统制作技术制作出柔性电极。该柔性电极基底材料为生物相容性良好的聚一氯对二甲苯（Parylene C）,导电材料为金。电极触点和焊点均为285 m1 500 m,连接焊点和触点的连接线宽为50 m 。初步电学测试表明,电极具有良好的低阻抗电学性能。使用多触点电极可减小触点尺寸,提高刺激的分辨率,改善脑刺激电极在临床中的治疗效果。     

二硫化钼催化析氢电极的构筑及其性能研究

针对目前MoS₂作为析氢催化剂时存在的活性位点数目少且材料导电性能差等问题,文中通过液相超声剥离法以及离心处理制备得到MoS₂/PVP分散液。PVP的辅助剥离作用使得剥离得到的MoS₂纳米片尺寸大幅减小,提高了MoS₂催化析氢活性位点的丰度;MoS₂在PVP辅助剥离过程中发生了2H相到1T相的转变,同样增强了催化析氢活性。文中选用含有导电铜层的PI基片作为电极基底,利用喷墨印刷技术将MoS₂/PVP催化剂固载于导电基底上制得催化析氢电极。该电极在10 mA·cm ^-2处的过电位为77 mV,Tafel斜率为65 mV·dec ^-1,这一结果表明该催化电极具有高催化活性。     

Effects of electrodes on resistance switching characteristics of TiO2 for flexible memory

Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.