用神经元MOS结构实现的一种新型匹配滤波器

在神经元MOS基本工作原理的基础上,提出了一种新型的匹配滤波器结构,并对具体电路进行了分析.与传统的匹配滤波器相比,具有结构简单的优点,大大减少了器件数目.最后给出了测试芯片的结果,验证了电路的可行性.     

用于WCDMA系统的一种新型神经元MOS复数匹配滤波器

提出了一种新型神经元MOS复数匹配滤波器结构,用于实现WCDMA系统中复四相扩频调制信号的解扩运算.主要对关键电路进行了分析,与线性运算器件实现的复数匹配滤波器电路相比,具有结构简单的优点,大大降低了器件数目,HSPICE仿真结果验证了该电路结构的可行性.     

一种基于神经元MOS的直扩匹配滤波器新结构

鉴于神经元MOS晶体管的多输入信号控制以及可变阈值等特点,本文提出一种基于神经元MOS的直接序列扩频(DS)通信系统中匹配滤波器的新结构,并对其进行了MATLAB结构验证和HSPICE电路仿真。与我们前期提出的基于神经元MOS的匹配滤波器相比,新结构的匹配滤波器提高了抗干扰能力,简化了电路结构。     

匹配滤波器捕获同步的超宽带通信系统设计

针对并行结构的匹配滤波器捕获电路存在同步漏捕和计算精度不高等缺点,采用了串行匹配滤波器来实现突发同步捕获,对同步捕获中涉及的三角模板互相关选相特性、四积分器合成本地模板脉冲的原理进行分析研究.超宽带通信系统电路模型测试表明,通信系统在短距离收发测试过程中接收信号能很好地解调出同步序列,效果良好.     

空军总医院全军临床航空医学中心简介

通过建立声表面波(SAW)匹配滤波器的等效能量结构,利用交叉场电路等效模型,在频域上对SAW匹配滤波器进行分析.对于中心频率为60 MHz、抽头数32位的SAW匹配滤波器,采用上述方法得到的插入损耗和-3 dB带宽的计算值和测试值分别相差小于1 dB和1 kHz,证明了其正确性和有效性.     

宽带FBAR滤波器的研制

采用阶梯型结构的薄膜体声波谐振器(FBAR)滤波器芯片和外匹配电路实现了一种输入输出端口阻抗均为50 Ω的宽带FBAR滤波器.FBAR滤波器芯片采用自主的FBAR滤波器工艺实现,外匹配电路采用0.35 μm GaAs工艺实现,并在该芯片上植球,采用倒装工艺将FBAR滤波器芯片与外匹配电路芯片进行异构集成.然后采用微组装工艺将异构集成芯片装配在标准陶瓷外壳中,外壳通过平行封焊工艺实现气密封装,体积仅为3.8 mm×3.8 mm×1.8 mm.测试结果显示,该滤波器通带频率范围为3 300～3 600 MHz,1 dB带宽约为300 MHz,相对带宽为8.7％,插入损耗为1.41 dB,在3 250 MHz和3 650 MHz处带外抑制分别为16.5 dBc和48.2 dBc.将实测结果与仿真结果进行了对比,两者基本吻合.     

直扩系统中匹配滤波器捕获方法研究

介绍了直扩系统中利用匹配滤波器方法进行捕获的特点和电路结构,重点研究了在高斯白噪声环境下采用部分周期相关匹配滤波器捕获方法的性能,推导了捕获方法的检测概率和虚警概率。最后利用Simulink对匹配滤波器捕获方法进行了仿真,给出了对应不同匹配长度和不同门限的检测概率和虚警概率曲线。     

基于PIN开关的可重构双波段功率放大器设计

为满足5G通信中多标准、多模式系统对功率放大器的需求,提出了一种新型的可重构双波段匹配电路结构.首先,在输出匹配网络中加入分布式PIN开关,通过开关的闭合与断开实现两个双波段输出匹配电路的良好匹配;然后,基于带通滤波器理论设计的宽带输入匹配网络,能够实现1.5～2.5 GHz频段内的良好匹配.为验证方法的有效性,采用C...     

移动通信中微带双工器的设计与仿真

本文介绍了用于无线移动通信中双工器的设计原理和方法,该双工器采用微带发夹型结构,由两个窄带带通滤波器(BPF)通过适当的匹配电路组成.文中给出了这两个带通滤波器的详细设计步骤,设计仿真结果与实际测量结果吻合良好.     

最小元件的新型CCCⅡ-C电流模式滤波器

提出了一种基于电流控制传输器(CCC Ⅱ)的新型电流模式多功能滤波器电路.该电路仅由两个CCC Ⅱ及两个接地电容构成,无需接任何电阻元件,不仅能实现多输入单输出的低通、带通、高通、带阻、全通电流模式滤波器,还能实现三种不同类型的具有同时多输出的电流模式滤波器.提出的电路无需各输入电流之间的匹配和无源元件的匹配,具有很低的有源和无源灵敏度,并对滤波电路进行了PSPICE仿真,结果表明所提出的电路方案正确有效.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first