多功能太阳电池电性能测试系统

多功能太阳电池电性能测试系统,采用大功率冷光灯做模拟太阳光源,对主机及样品架采取了有效的温控措施,并使用单板微处理机对测试结果进行联机实时处理,测试准确、快速、方便。 该系统主要由主机、I—V曲线显示和记录仪器、数据处理设备组成(图1),可综合测定(?)60以内各种规格太阳电池的电特性参数:开路电压V_(oc),短路电流I_(sc),最大功率输出P_m,最佳工作点电压V_(mp)和电流I_(mp),光电转换效率η,填充因子FF,最佳负载电阻R_L,串联电阻r,以及开路电压、短路电流、最大功率输出的温度系数等。系统方框图见图2。     

温度对SiC MOSFET电流和电压变化率影响分析

由于SiC MOSFET的半导体物理和器件内部参数会随着温度的变化而发生变化,导致温度变化也会影响SiC MOSFET的动态特性。该文以其漏极电流变化率dI_D/dt、漏源极电压变化率dV_(DS)/dt这2个动态性能参数为例,重点从实验的角度分析其随温度变化的规律。首先,搭建基于电感钳位双脉冲的SiC MOSFET动态特性测试电路,测试不同温度下漏极电流和漏源极电压,得到温度对其的影响规律;其次,基于器件物理方程建立SiC MOSFET漏极电流变化率dI_D/dt、漏源极电压变化率dV_(DS)/dt的温度特性解析模型,且通过实验测试得到SiC MOSFET的阈值电压V_(TH)、跨导g_m的温度特性;最后,根据所建立的SiC MOSFET dI_D/dt、dV_(DS)/dt温度特性解析模型及其V_(TH)、g_m的温度特性从理论上对实验所得结果进行定性解释。所得结果对SiC MOSFET器件选型、建立准确的器件模型及实际系统的设计具有指导意义。     

背面蒸镀铝金属化N型PERT太阳电池退火过程的研究

在N型PERT太阳电池制备过程中,蒸镀铝可作为太阳电池背面的金属电极,但是由于背面激光开膜所引起的氧化层会影响太阳电池的串联电阻(R_s),所以必须在蒸镀铝工序完成后对太阳电池进行退火处理以减少Rs。文章重点研究了以蒸镀铝为背电极的N型PERT太阳电池在不同退火工艺下的性能差异,研究结果表明,退火温度不变,随着退火时间的增加,Rs逐渐降低,填充因子(FF)和短路电流密度(J_(sc))迅速升高,开路电压(V_(oc))则缓慢升高,如果退火时间恰当,R_s会降得很低,V_(oc)也会处于峰值,此时电池效率(E_(ta))最大,最终在退火温度为380℃,且退火时间为40 s时,太阳电池的E_(ta)可达到20.77%。通过研究发现:太阳电池的退火过程可用阿伦尼乌斯公式来表达,通过此方程得出了铝和氧化硅退火反应的表观活化能为91.89 k J/mol。     

温度和光强对聚光硅太阳电池特性的影响研究

利用恒压频闪式I-V曲线测试仪研究分析温度和光强对聚光硅电池特性参数的影响。研究发现,聚光硅电池开路电压V_(oc) 的温度系数随聚光比升高不断降低,从1倍聚光比的-1.97 m V/K降低到30倍聚光比的-1.71 m V/K,和其理论计算值吻合较好;和普通单晶硅电池开路电压V_(oc) 温度系数相比,该电池的要小,上述说明聚光硅电池在聚光下工作有利于其在较高温度下操作。聚光硅电池填充因子和效率均随温度升高而降低;由于串联电阻影响,该电池效率随聚光比的增大先增后减,适合在小于20倍聚光比下的系统中工作。可进一步优化该电池金属栅线覆盖率和阻值引起的功率损失以提高其适合应用的聚光比。     

氧化物层对Cr-MIS太阳电池性能的影响

本文报道了氧化物层对Cr-MIS太阳电池性能的影响。实验证明,氧化物层厚度约30(?)的电池性能较好。在100mW/cm~2的光强下,有效面积为1.3cm~2的Cr-MIS单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.545V、31.5mA/cm~2、67％和11.5％。在同样光照条件下,有效面积为3.14cm~2的Cr-MIS废次单晶硅电池,V_(oc)、J_(sc)、FF和η分别为0.541V、28.3mA/cm~2、64％和9.8％。     

基于一条Ⅰ-Ⅴ曲线提取硅太阳电池参数的一种新方法

依据硅太阳电池的短路电流I_(sc),开路电压V_(oc),最大功率点电流I_(mp),最大功率点电压V_(mp)等特性参数,结合电流方程在最大功率点处的极值表述,建立求解3个电性参数的封闭方程组,解出硅太阳电池的3个待定参数从而确定出硅太阳电池的电流方程。拟合的曲线与实验数据相比。结果证明了文中所提方法的正确性和可行性。     

表面处理与p层电导率对HIT电池性能的影响

考虑到氢氟酸溶液对晶体硅表面具有去氧化和氢离子钝化表面悬键的双重作用,通过优化清洗工艺使得a-Si∶H(i)/c-Si/a-Si∶H(i)异质结构有效少子寿命达到2 ms。研究不同沉积温度对p型非晶硅薄膜电导率的影响,结合后退火发现中温(150℃)生长高温后退火的方式优于直接高温(200℃)沉积,电导率和钝化效果都有明显改善。采用优化后的p层,a-Si∶H(p~+)/a-Si∶H(i)/c-Si/a-Si∶H(i)/a-Si∶H(n~+)(inip)结构少子寿命可达3.70 ms。制备的HIT电池具有优良的性能:开路电压V_(oc)=700 mV,潜在的填充因子pFF=82%,短路电流密度Jsc=32.10 mA/m~2,填充因子FF=72.35%,转换效率η=16.26%,对比Suns-V_(oc)I-V曲线和标准条件下测试的I-V曲线计算得串联电阻,分析FF与pFF差异的原因。     

Pt/a-Si肖特基太阳电池的退火效应

我们用射频溅射代替电子束蒸发制作(?)100mm的太阳电池,Pt的消耗量仅万分之一克左右。为了消除射频溅射造成a-Si表面的损伤和界面态的增加,在电池制成以后对它进行了适当的退火,使V_(oc)和j_(sc)分别提高40％和30％左右。经退火和加上减反射膜的单体电池,其性能如下:V_(oc)=595mV,I_(sc)=14.1mA/cm~2,FF=0.49,η=4.1％(电池面积为     

基于新型电子给体的联吡啶钌染料及其敏化太阳电池

合成了一种含有N,N-二甲基苯胺电子给体的新型联吡啶钌染料Ru[(L)(dcbpy)]NCS2,编号RC-30,并应用于染料敏化太阳电池(DSC)中。使用核磁共振氢谱(1H NMR),基质辅助激光解吸-飞行时间质谱(MALDITOFMS)对新染料的分子结构进行表征,利用紫外可见吸收(UV-Vis)和循环伏安法(CV)对染料的光电化学性质进行表征。将该染料应用在DSC中,RC-30敏化电池的短路电流密度J_(sc)、开路电压V_(oc)、填充因子FF、电池效率η分别为15.5 m A/cm~2、0.710 V、73.9%和8.11%,相对于相同条件下标准染料N3的J_(sc)提高了15.6%、电池效率η提高了10.4%。     

Ga_(1-x)Al_xAs/GaAs太阳电池结特性研究

本文报道了Ga_(1-x)Al_xAs/GaAs电池正向暗I—V特性,示出暗I—V曲线,I_(01)、I_(02)、A_1、A_2及扩展区少子有效扩散长度等计算值。确定了以复合电流为主要暗电流的电流输运机理。用双指数模型讨论了暗特性和输出特性的关系。获得了开路电压V_(oc)随I_(02)降低而提高,填充因子FF随A_2的降低而增加的实验结果。EB1C扫描照片示出GaAs电池的有源区中存在无数不规则黑区,单束感生电流在这些区域明显减弱。电子探针测出黑区为Fe、Si、Al的杂质团。非火焰原子吸收光谱测出GaAs衬底中含有4×10~(15)cm~(-3)的杂质铁。铁、硅杂质团是影响少子扩散长度和复合电流的主要因素。 通过改进工艺,降低了暗电流,提高了电池性能,V_(oc)(1.01-1.05)超过理论预期值,FF(0.81-0.82)达到理论预期值,转换效率(AM1)达18—19％。     

微晶硅电池的制备及提高其效率的优化

采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同硅烷浓度系列的微晶硅电池。结果表明:电池的开路电压随着硅烷浓度的增大而逐渐增加,而电池的短路电流则先增加后减小,在转折点电池的效率达到最大,填充因子则变化不明显;(220)择优取向出现,I(220)/I(111)比值大,电池的短路电流密度也大,电池的效率也最高;在实验的范围内,电池的短路电流密度和厚度成正比例关系;首次在国内制备出了效率达7.3%,短路电流密度(Jsc)为21.7mA/cm2,开路电压(Voc)为0.52V,填充因子(FF)为65%的微晶硅电池。     

带有缓变层的大面积集成型a－Si：H太阳电池的研制

报道了把缓变层用于大面积（２７９０ｃｍ２）单结集成型ａ－Ｓｉ：Ｈ太阳电池板工业化生产的研究工作。分析了它对太阳电池板性能参数Ｖｏｃ、Ｉｓｃ、ＦＦ、η的影响和对提高ａ－Ｓｉ：Ｈ太阳电池板转换效率的作用。试验所得电池板的平均开路电压达２５．１Ｖ，平均转换效率达６．２％，分别比同时生产的无级变层电池板的水平提高９．１３％和１６．９８％。试验中最好的电池板开路电压达２５．６Ｖ，转换效率达６．６％。     

EFFECTS OF PROCESSING ON CdTe/CdS MATERIALS AND DEVICES

By analyzing CdTe/CdS devices fabricated by vacuum evaporation, a self consistent picture of the effects of processing on the evolution of CdTe cells is developed which can be applied to other fabrication methods. In fabricating CdTe/CdS solar cells by evaporation, a 400°C CdCI₂ heat treatment is used which recrystallizes the CdTe and interdiffuses the CdS and CdTe layers. The interdiffuson can change the bandgap of both the CdTe and CdS which modifies the spectral response of the solar cell. After this heat treatment a contacting/doping procedure is used which converts the CdTe conductivity to p-type by diffusion from Cu from the contact. Finally, the cell is treated with Br₂CH₃,OH which improves both Voc and FF. Analogous process steps are used in most fabrication processes for CdTe/CdS solar cells.     

Performance study of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal system

The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied via both experiment and theoretical calculation. The I–V characteristics of the solar cell arrays and the output performances of the TCPV/T system demonstrated that among the investigated four types of solar cell arrays, the triple junction GaAs cells possessed good performance characteristics and the polysilicon cells exhibited poor performance characteristics under concentrating conditions. The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were also studied by experiments. The optimum concentration ratios for the single crystalline silicon cells and Super cells were 4.23 and 8.46 respectively, and the triple junction GaAs cells could work well at higher concentration ratio. Besides, some theoretical calculations and experiments were performed to explore the influences of the series resistances and the working temperature. When the series resistances R_s changed from 0 Ω to 1 Ω, the maximum power P_m of the single crystalline silicon, the polycrystalline silicon, the Super cell and the GaAs cell arrays decreased by 67.78%, 74.93%, 77.30% and 58.07% respectively. When the cell temperature increased by 1 K, the short circuit current of the four types of solar cell arrays decreased by 0.11818 A, 0.05364 A, 0.01387 A and 0.00215 A respectively. The research results demonstrated that the output performance of the solar cell arrays with lower series resistance was better and the working temperature had a negative impact on the current under concentration. In addition, solar irradiation intensity had certain effects on the solar cell’s performance. For the crystalline silicon solar cell arrays, when the solar direct radiation exceeded a certain value, the I–V curves almost became a straight line and the output performances decreased due to the high series resistance leading to the high power loss. For the triple junction GaAs solar cell array, its performance was always excellent.     

Study of the photon down‐conversion effect produced by thin silicon‐rich oxide films on silicon solar cells

In the present work, we studied the photon down‐conversion effect produced by thin films of silicon oxide with embedded silicon nanocrystals also called silicon‐rich oxide (SRO). These films have been used to absorb high energy light and the re‐emission of two or more low energy photons (~1.1 eV) with the goal of improving the external quantum efficiency and consequently the conversion efficiency of silicon solar cells. According to our results, the incorporation of a thin SRO film on the solar cell surface increases the short circuit current and the FF of the silicon solar cells; the enhancement of spectral response is due to the high photoluminescence intensity of the SRO in the visible region when irradiated with UV light. An improvement of 38% in the solar cell efficiency has been observed in our particular solar cell fabrication process by the use of an SRO film with high photoluminescence intensity, which replaces the conventional silicon dioxide film. Copyright © 2016 John Wiley & Sons, Ltd.     

Properties of amorphous silicon solar cells fabricated from SiH2Cl2

Chlorinated intrinsic amorphous silicon films [a-Si:H(Cl)] and solar cell i-layers were fabricated using electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) and SiH₂Cl₂ source gas. n–i–p solar cells deposited on ZnO–coated SnO₂ substrates had poor photovoltaic performances despite the good electronic properties measured on the a-Si:H(Cl) films. Improved open–circuit voltage (V_oc) of 0.84 V and fill factor (FF) of 54% were observed in n–i–p solar cells by providing an n/i buffer layer and by using Ga-doped ZnO coated glass substrates. However, the FF improvement was still rather poor, which is thought to originate from high interface recombination in the ECR deposited solar cells. The V_oc and the FF showed much stable feature against light soaking.     

非晶硅太阳能光伏/光热空气集热器性能对比实验研究

文章设计了新型非晶硅太阳能PV/T空气集热器,该空气集热器能够解决传统太阳能PV/T热水器在高温波动情况下,晶硅电池热应力大的问题,同时避免了冬季管道发生霜冻的现象。文章通过实验对比,分析了非晶硅太阳能PV/T空气集热器、单独非晶硅光伏电池和传统太阳能空气集热器的能量效率和[火用]效率的差异。分析结果表明:非晶硅太阳能PV/T空气集热器的平均热效率为45.70%,比传统太阳能空气集热器的平均热效率降低了约25.88%;当空气质量流量增大至0.048 kg/s时,非晶硅太阳能PV/T空气集热器中的非晶硅光伏电池的平均电效率高于单独非晶硅光伏电池,它们的平均电效率分别为4.70%,4.54%;非晶硅太阳能PV/T空气集热器的总[火用]效率高于传统太阳能空气集热器的热[火用]效率和单独非晶硅光伏电池的电[火用]效率,非晶硅太阳能PV/T空气集热器总[火用]效率最大值为7.14%。文章的分析结果为非晶硅太阳能PV/T空气集热器的推广提供了参考。     

Patternable brush painting process for fabrication of flexible polymer solar cells

The brushing painting method is one of the typical solution processes, which makes it possible to fabricate electronic devices by simply using polymers. For the fabrication of modules and large-area devices, however, a patterning process is required for each layer. Due to the problems associated with the conventional patterning, many studies have been conducted to develop new patterning . In this study, we successfully fabricated bulk heterojunction (BHJ) structured polymer solar cells (PSCs) on a plastic substrate with an active layer through the brushing painting process. In particular, flexible PSCs with hole transporting and photo-active layers formed by the repositionable adhesive-based patterning method were fabricated to produce large-area solar cells. The fabricated PSCs exhibited Jsc, Voc, FF and power conversion efficiency (PCE) values of 8.5 mA/cm², 0.636 V, 48.8% and 2.6%, respectively. In other words, they were more efficient than those fabricated by the spin coating method. In particular, an increase in the Jsc and FF values was observed when the series resistance (Rs) decreased to 29 Ω cm² while the shunt resistance (Rsh) increased to 2018 Ω cm².     

Experimental investigation of solar hydrogen production PV/PEM electrolyser performance in the Algerian Sahara regions

This paper presents experimental results on the solar photovoltaic/PEM water electrolytes system performance in the Algerian Sahara regions. The first step is to present a photovoltaic module characterization under different conditions then validate the results by comparing the measured and calculated values. The main objective of this study is to develop a parametric study on the system performance (open-circuit voltage Voc, short circuit current Is, fill factor FF, maximum power Pm and the efficiency η) under hot climate conditions (Ouargla, Algeria). The ambient temperature effects and solar radiation on the solar PV performance characteristics were investigated using modeling and simulation analysis as well as experimental studies. The results show that the root mean squared error (RMSE) error of the currents and voltages and the mean bias error (MBE) are respectively 0.71%, 0.37% and 0.12%, 0.15%. The relative errors in the current and the voltage are respectively 0.83%–1.76%, and −0.58% to 0.83%. The second part provide some general characteristics concerning the indirect coupling of a lab scale proton exchange membrane (PEM) water electrolyser (HG60) powered by a set of our photovoltaic panels. Experimental results provide practical information for the modules and the electrolysis cells by the indirect coupling. The weather conditions effect on hydrogen production from the electrolyser was also investigated. The results showed a high hydrogen production of 284 L in one day for 08 h of running and the electrolyser power efficiency with solar PV system was between 18 and 40%.     

开口隔离层上多晶硅薄膜制备

在SSP硅带衬底上制备开口SiO2隔离层,在隔离层上沉积多晶硅薄膜籽晶层;然后以ZMR将制备的多晶硅薄膜区融、进行再结晶,制备了SSP隔离层上多晶硅薄膜,并制备了多晶硅薄膜电池。研究结果表明:ZMR对籽晶层的区融、结晶效果比较理想,晶粒尺寸增大到厘米级长、毫米级宽;经过晶硅薄膜沉积后,开口隔离层的孔洞未完全被多晶硅薄膜层覆盖住;制备的电池的光特性参数Voc、Isc、FF都比较低,电池的最高转换效率为3.83%;指出了改进的工艺措施。