Growth of p-type ZnO thin films by using an atomic layer epitaxy technique and NH3 as a doping source

Nitrogen-doped, p-type ZnO thin films have been grown successfully on sapphire (0001) substrates by atomic layer epitaxy (ALE) using Zn(C₂H₅)₂ [Diethylzinc, DEZn], H₂O and NH₃ as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE was 210 Ω cm with a hole concentration of 3.41 × 10¹⁶ cm^− 3. Low temperature-photoluminescence analysis results support that the nitrogen ZnO after annealing is a p-type semiconductor. Also a model for change from n-type ZnO to p-type ZnO by annealing is proposed.     

Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation

Crystallized B₁₃C₂ thin films were fabricated by intense pulsed-ion beam evaporation (IBE) method. Electrical conductivity and Seebeck coefficients of the obtained films were 1×10^—4 l/Ωm and 200 μV/K at 1000 K, respectively. These values were comparable to those of bulks. For the application of the thin films, since reasonable thermoelectric (TE) properties were confirmed for the B₁₃C₂ films fabricated, we attempted to develop ’in-plane’ type TE device using B₁₃C₂ and SrB₆ as p-type and n-type elements, respectively. With applying temperature difference to the fabricated device, thermo-electromotive force and electrical power were generated from the device we made, indicating that the device worked as a TE device. To the best of our knowledge, this is the first demonstration of the TE device composed of only boron-rich solids.     

Fast response time alcohol gas sensor using nanocrystalline F-doped SnO2 films derived via sol–gel method

Pure and fluorine-modified tin oxide (SnO₂) thin films (250–300 nm) were uniformly deposited on corning glass substrate using sol–gel technique to fabricate SnO₂-based resistive sensors for ethanol detection. The characteristic properties of the multicoatings have been investigated, including their electrical conductivity and optical transparency in visible IR range. Pure SnO₂ films exhibited a visible transmission of 90% compared with F-doped films (80% for low doping and 60% for high doping). F-doped SnO₂ films exhibited lower resistivity (0· 12 × 10^???4 Ω  cm) compared with the pure (14·16 × 10^???4 Ω  cm) one. X-ray diffraction and scanning electron microscopy techniques were used to analyse the structure and surface morphology of the prepared films. Resistance change was studied at different temperatures (523–623 K) with metallic contacts of silver in air and in presence of different ethanol vapour concentrations. Comparative gas-sensing results revealed that the prepared F-doped SnO₂ sensor exhibited the lowest response and recovery times of 10 and 13 s, respectively whereas that of pure SnO₂ gas sensor, 32 and 65 s, respectively. The maximum sensitivities of both gas sensors were obtained at 623 K.     

Structural,optical, and electrical properties of ZnTe:Cu thin films by PLD

In this work, ZnTe and ZnTe:Cu films were obtained by pulsed laser deposition using the co-deposition method. ZnTe and Cu₂Te were used as targets and the shots ratio were varied to obtain 0.61, 1.47, 1.72, and 3.46% Cu concentration. Doping of ZnTe films with Cu was performed with the purpose of increasing the p-type carrier concentration and establishing the effect of concentration of Cu on structural, optical, and electrical properties of ZnTe thin films to consider their potential application in electronic devices. According to X-ray diffraction, X-ray photoelectron spectroscopy, UV–visible spectroscopy, and Hall effect results, ZnTe and ZnTe:Cu films correspond to polycrystalline zinc–blende phase with preferential orientation in (111) plane. Optical characterization results indicate that as-deposited films (band gap?=?2.16 eV) exhibit a band gap decrease as function of the increase of Cu concentration (2.09–1.64 eV), while, annealed films exhibit a decrease from 1.75 to 1.46 eV, as the Cu concentration increases. Lastly, Hall effect results show that ZnTe films correspond to a p-type semiconductor with a carrier concentration of 3?×?10¹³ cm^?3 and a resistivity of 1.64?×?10⁵ Ω?cm. ZnTe:Cu films remain like a p-type material and present an increasing carrier concentration (from 3.8?×?10¹⁵ to 1.26?×?10¹⁹ cm^?3) as function of Cu concentration and a decreasing resistivity (from 7.01?×?103 to 2.6?×?10^?1 Ω cm). ZnTe and ZnTe:Cu thin films, with the aforementioned characteristics, can find potential application in electronic devices, such as, solar cells and photodetectors.     

Structural,optical and electrical properties of SnO<Subscript>2</Subscript>:F thin films deposited by spray pyrolysis for application in thin film solar cells

Fluorine doped tin oxide (FTO) thin films with adequate properties to be used as transparent electrical contact for PV solar cells were synthesised using the spray pyrolysis technique, which provides a low cost operation. The deposition temperature and the fluorine doping have been optimized for achieving a minimum resistivity and maximum optical transmittance. No post-deposition annealing treatments were carried out. The X-ray diffraction study showed that all the FTO films were polycrystalline with a tetragonal crystal structure and preferentially oriented along the (200) direction. The grain size ameliorates with the increase in substrate temperature. The samples deposited with the substrate temperature at 440 °C and fluorine content of 20 wt % exhibited the lowest electrical resistivity (1.8 × 10^?4 Ω cm), as measured by four-point probe. Room-temperature Hall measurements revealed that the 20 wt% films are degenerate and exhibit n-type electrical conductivity with carrier concentration of ~4.6 × 10²⁰ cm^?3, sheet resistance of 6.6 Ω/□ and a mobility of ~25 cm² V^?1 s^?1. In addition, the optimized growth conditions resulted in thin films (~500 nm thickness) with average visible transmittance of 89 % and optical band-gap of 3.90 eV. The electrical and optical characteristics of the deposited films revealed their excellent quality as a TCO material.     

Investigation of the transport properties of InSb single-crystal films obtained by directional crystallization

Both n-type and p-type InSb films (with a wide range of carrier concentration) were obtained by the directional crystallization method from the melt on large areas of mica, quartz and sapphire substrates. The p-type films were doped with germanium. It is shown that, depending on the crystallization conditions, one can obtain films of different structure: dendritic films, films containing macrodefects and homogeneous single-crystal films. The optimal growth conditions of single-crystal films having transport properties close to those of bulk material are given. The investigation of some transport properties in single-crystal p-type InSb films was carried out in the temperature range 77–600 K.A hole mobility in the range from 180 cm² V^-1 s^-1 to 5×10³ cm² V^-1 s^-1 in films with a concentration p=1.2×10¹⁶?5×10¹⁸cm^-3 of uncompensated acceptors was observed.An investigation of the concentration and temperature dependence of the hole mobility was carried out. Experimental results are in good agreement with the theory if a combined impurity, acoustic and optical mode scattering is taken into account.The phonon drag effect in p-type InSb films was observed. The temperature dependence of the thermoelectric power shows fair agreement with Herring's theory.     

The Rectification Studies on the P+-Ion Implanted C60/Si Films

Abstract

N-type doping of the C₆₀ films deposited on Si substrates has been achieved by 80 keV P⁺-ion implantation with doses of 2×10¹⁴ cm^?2 at room temperature. The heterostructures composed of the n-type doped C₆₀ films and n- or p-type Si(111), Si(100) substrates are studied in view of semiconductor heterojunctions. The rectification and other electrical characteristics of the P⁺-ion implanted n-C₆₀/n-(p-)Si heterostructures are disclosed by the current-voltage (I-V) measurements at room temperature. The n-C₆₀/p-Si heterostructures show stronger rectification than n-C₆₀/n-Si heterostructures and Si(111) substrates are found to be more suitable for forming n-C₆₀/Si heterostructures than Si(100) substrates.     

A study on the electrical and optical characteristics of IGZO films

The electrical and optical properties of InGaZnO (IGZO) thin films were studied in the research. It was found that all the films deposited at room temperature exhibit amorphous structures. A better film quality was obtained at a lower pressure with sputtering ambiance. The RF power toward the IZO target was constant at 125 W; the RF power toward the Ga₂O₃ target varied from 0 to 70 W. A best IGZO film with corresponding resistivity, carrier concentration, and mobility is 7.94 × 10^?4 Ω-cm, 1.68 × 10²⁰ cm^?3, and 47 cm²/V-s, respectively. Due to the doping of gallium in the IGZO film, it led to a lower resistivity than that of the IZO film. A blue shift effect of the film was also observed in the doping of gallium to the IGZO film. The H₂ plasma effects toward the IGZO were also observed.     

Synthesis and high temperature transport properties of Te-doped skutterudite compounds

Te-doped skutterudite compounds Co₄Sb_12?x Te _x (x?=?0.4–0.7) have been fabricated by solid state reaction method and spark plasma sintering. The scanning electron microscope images indicate all samples are compact and the average particle size increases with the Te doping fraction. The carrier concentration and electrical conductivity exhibit positive doping fraction dependence, and a maximum electrical conductivity of 16.29?×?10⁴?Sm^?1 is obtained at 300?K for Co₄Sb_11.3Te_0.7. The values of the power factor (x?=?0.4–0.6) are greater than 4.0?×?10^?3?Wm^?1?K^?2 at the temperature range of 650–800?K, larger than previous literature reports. The lattice thermal conductivity decreases monotonously over the whole investigated temperature range and exhibits a negative doping fraction dependence except for Co₄Sb_11.3Te_0.7. The resultant dimensionless figure of merit of all the samples increases monotonously over the whole investigated temperature range, and a maximum value of 0.95 is achieved at 800?K for Co₄Sb_11.4Te_0.6.     

A study of the structural,optical, and electrical properties of SnS<Subscript>2</Subscript>:Cu optical semiconductor thin films deposited by the spray pyrolysis technique

Cu-doped tin-sulfide thin films were deposited onto glass substrates at T = 400 °C through spray pyrolysis. The effects of Cu doping on the structural, optical, and electrical properties of the thin films were investigated. The precursor solution was prepared by dissolving tin chloride (SnCl₄·5H₂O) and thiourea (CS(NH₃)₂) in deionized water and then adding copper chloride (Cl₂Cu₂H₂O). SnS₂:Cu thin films were prepared with \(\frac{{\left[ {Cu} \right]}}{{\left[ {Sn} \right]}}\% = 0, 1, 2, 3, 4 \,{\text{at}}.\%\). X-ray diffraction analysis showed that the thin films had a preferred (001) orientation of the SnS₂ phase and that the intensity of the (001) peak decreased with increased doping concentration from 1–4 at.%. Scanning electron microscopy studies indicated that the thin films had spherical grains. Characterization results of thin films showed that single-crystal grains, average grain size, optical band gap, carrier concentration, Hall mobility, and electrical resistance varied within 5–14 nm, 46–104 nm, 2.81–2.99 eV, 2.42 × 10¹⁶–26.73 × 10¹⁶ cm^?3, 2.41 × 10^?3–20.04 × 10^?3 cm²/v.s, and 9.05–12.89 Ω cm, respectively. Hall effect studies further revealed that the films exhibited n-type conductivity.     

The effect of growth conditions and N<Subscript>2</Subscript>/O<Subscript>2</Subscript> ambient on LO-phonon replicas during epitaxial growth of ZnO on c-sapphire

High quality heteroepitaxial thin films of ZnO:N were grown by pulsed laser deposition using a two-step growth method and annealed in situ at different temperatures and ambient conditions. Films were analyzed by X-ray diffraction (XRD), electrical measurements, and photoluminescence experiments at low temperatures to investigate the effect of nitrogen doping. The XRD results demonstrate epitaxial growth on the c-sapphire substrates, with average grain size of 57 nm. Photoluminescence spectra reveals a peak at 3.061 eV (405.1 nm) which is part of the longitudinal-optical-phonon replicas of excitons bound to neutral acceptors \textA₁⁰  \textX_\textA {\text{A}}_{1}^{0} \,{\text{X}}_{\text{A}} at 3.348 eV (370.4 nm), attributed in recent investigations to a newly reported donor–acceptor pair. Electrical resistivity and Hall effect measurements were performed using standard four point van der Pauw geometry at room temperature. Fresh films exhibited a resistivity of 3.1 × 10⁻³ Ω cm, a carrier density of 1.3 × 10¹⁹ cm⁻³, and a mobility of 53 cm²/V s. During approximately 2 weeks the as-deposited films presented a p-type behavior, as shown by the positive sign of the Hall constant measured. Thereafter, films reverted to n-type. From electrical measurements and photoluminescence spectra, the acceptor energy was determined to be 150 meV, in close agreement with reported values. These results are consistent with those presented in the literature for high purity crystals or homoepitaxial thin films, even though samples for the present study were processed at lower annealing temperature.     

Characterization of ohmic contacts to InP

The results of a study of the electrical and metallurgical properties of thin metallic layers deposited on InP for use as ohmic contacts are presented. The layers were heat treated at temperatures up to 550°C and were examined with Auger electron spectroscopy. For contact to n-type InP three thin film systems were investigated: gold, nickel and a composite Ni/Au/Ge layer. Nickel was found to produce ohmic behavior in the Ni/Au/Ge/InP system with a minimum specific contact resistance r_c of 3×10^?5 Ω cm² for a net doping of 3×10¹⁶ cm^?3. For contact to p-type InP a film consisting of Au/Mg was investigated. For heat treatment of the Au/Mg/InP system above 350°C, r_c decreased as the temperature of the heat treatment increased and the surface morphology exhibited increasing signs of alloying at higher temperatures. The smoothest surface was obtained at 446°C for 50 min with r_c≈1×10^?4Ω cm² for a net doping of 6×10¹⁷ cm^?3.     

The influence of copper doping on the electrical properties of magnetic semiconducting Cd1−xFexCr2S4 single crystals

The Curie temperature and the dependence of the resistivity on the magnetic flux density and on the temperature of Cu-doped p-type Cd_1?xFe_xCr₂S₄ single crystals have been measured.The Curie temperature is not affected by the doping in spite of the considerably higher electrical conductivity of the doped samples. The dependence of the resistivity on the magnetic flux density (B ≤ 1 Vs/m²) has a behaviour similar to that of n-type CdCr₂Se₄: In, reported earlier /1/. At low iron content, the negative magnetoresistance is enhanced by the copper doping; at high iron content, the magnetoresistance is diminished by the doping. The results are discussed on base of the model of “magnetic impurity states” due to Fe²⁺ states.     

Influence of substrate temperature on the growth and properties of reactively sputtered In-rich InAlN films

Indium-rich InAlN films were prepared on Si (111) substrates by using reactive co-sputtering in a mixed Ar-N₂ atmosphere. The substrate temperature was varied from room temperature to 300 °C to investigate the film’s growth and properties at different temperatures. Structural and optical properties of the films were evaluated through high resolution XRD and Raman spectroscopy respectively, surface morphology and roughness analysis was performed by using FE-SEM and AFM respectively, whereas the electrical characterizations were made through resistivity and current–voltage (I–V) measurements respectively. Highly c-axis oriented nanocrystalline InAlN films with wurtzite structure were obtained at a substrate temperature of 100 °C and above. Structural quality of the films was improved with increase of the substrate temperature. The Raman spectroscopy revealed A₁ (LO) modes which became more intense by the increasing the substrate temperature. The electrical studies indicated n-type nature of InAlN film having electron concentration in the range 3 × 10¹⁹–20 × 10¹⁹ cm^?3. The electrical resistivity exhibited a decreasing trend with increase of the deposition temperature. The I–V measurements showed a noticeable increase in the value of current by increasing the substrate temperature to 300 °C.     

The synthesis and characterization of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films from melt reactions using xanthate precursors

Kesterite, Cu₂ZnSnS₄ (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu₂ZnSnS₄ (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 °C are tetragonal, while at temperatures <375 °C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 Ω cm), carrier concentration (2.65 × 10⁺¹⁵ vs 4.55 × 10⁺¹⁷ cm^?3) and mobility (87.1 vs 11.1 cm² V^?1 s^?1). The Hall coefficients were 2.36 × 10³ versus 13.7 cm³ C^?1.     

Semiconductor characterization of Cr-doped titania electrodes with p-n homojunction devices

A nano-TiO₂ electrode with a p-n homojunction device was designed and fabricated by coating of the nano-TiO₂ (n-type) film together with the Cr³⁺-doped TiO₂ (p-type) film. The sample films were prepared with synthesized sol-gel TiO₂ which were verified as nano-size particles with anatase structure. The semiconductor characteristic of the p-type and n-type films was analyzed by current-voltage (I-V) measurements. Results show that the rectifying characteristic of the TiO₂ films was observed from the I-V data illustration for both the n-type and p-type films. In addition, the characteristic of the rectifying curves was influenced by the fabrication conditions of the sample films, such as the doping concentration of Cr³⁺, heating temperature of the films, and film thickness. From the I-V analysis, the rectifying current of this diode showed a 10² mA order higher than the one of the n-type film. The p-n homojunction TiO₂ electrode showed greater performance of electronic properties than the n-type TiO₂ electrode.     

Thermodynamic properties and dissociation of SrLaAlO4

The enthalpy of solution of SrLaA1O₄ in the 2PbO · B₂O₃ melt at 973 K was measured using a hightemperature Cal vet microcalorimeter. The enthalpies of formation of SrLaA1O₄ from the constituent oxides and constituent elements at 298.15 K were determined to be -97.7 ±5.5 and -2422.9 ±5.6 kJ/mol, respectively. The partial pressures of the vapor species over molten SrLaA1O₄ at T_m = 1923 K were evaluated. The equilibrium oxygen pressure at 1923 K was found to be 5.05 × 10^-3 Pa.     

硅/石墨负极中硅的体电阻率和掺杂类型对锂离子电池电化学性能的影响

将电阻率为1Ω·cm、0.1Ω·cm、0.01Ω·cm、0.001Ω·cm的n型掺杂硅片以及电阻率为1Ω·cm、0.001Ω·cm的p型掺杂硅片球磨制成6种硅粉,并分别将其与石墨按照5∶95的质量比进行混合,用作锂离子电池负极材料并制成扣式电池,通过电化学阻抗谱和倍率性能测试来研究硅材料体电阻率和掺杂类型对锂离子电池电化学性能的影响规律。结果表明,硅材料体电阻率越低,其储锂容量越高,倍率性能越好。电阻率相同时,n型掺杂硅始终比p型掺杂硅具有更大的储锂容量和更好的倍率性能。但是,当p型掺杂硅的电阻率远低于n型掺杂硅时,p型掺杂硅电化学性能更佳。另外,0.001Ω·cm的n型掺杂硅样品具有最佳的充放电比容量和倍率性能,其首次充放电比容量分别为457.7mAh·g~(-1)和543.4mAh·g~(-1)。     

Effect of Ga doping concentrations,substrate temperatures and working pressures on the electrical and optical properties of ZnO thin films

We fabricated Ga-doped ZnO (GZO) thin films on glass substrate by RF magnetron sputtering method with different conditions of Ga₂O₃ concentration, substrate temperature and working pressure. Next we investigated the electrical, optical and structural properties of the GZO thin films. At a substrate temperature of 300 °C, a working pressure of 1 mTorr, and a Ga₂O₃ concentration of 3 wt%, the GZO thin films showed the lowest resistivity of 3.16 × 10^?4 Ω cm, a carrier concentration of 7.64 × 10²⁰ cm^?3 and a Hall mobility of 25.8 cm²/Vs. Moreover, the GZO thin films exhibited the highest (002) orientation under the same conditions and the full width at half maximum of X-ray peak was 0.34°. All GZO thin films showed the optical transmittance of more than 80 % in the visible range regardless of working conditions. The Burstein–Moss effect was observed by the change of doping concentration of Ga₂O₃. The GZO thin films were fabricated to have the good electrical and optical properties through optimizing doping concentration of Ga₂O₃, substrate temperature, working pressure. Therefore, we confirmed the possibility of application of GZO thin film as transparent conductive oxide used in flat panel display and solar cell.     

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O₂/(O₂ + Ar) % of 66.67 % in a mixed gas of Ar and O₂ with constant chamber pressure of 2.75 × 10^?4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?0.32 × 10¹⁰ dyne/cm² from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.