Consequences of Ti-, Li-, and Er-ion implantations on the optical properties of single layers of Ta(2)O(5)

Tantalum pentoxide (Ta(2)O(5)) layers made by ion plating are implanted with a high fluence of keV Ti, Li, and Er ions. The resulting refractive-index profiles are given from the analysis of guided-wave propagation conditions. A comparison with spectrophotometric measurements is presented. All the implanted layers present low losses (extinction coefficient of some 10(-6)) after thermal annealing in air. Ti-implanted layers exhibit an increase in refractive index, whereas Li- and Er-implanted layers present a slight decrease in refractive index. Er-implanted layers present photoluminescent properties.     

Electrochemical fabrication of nanodimensional multilayer films

A novel method of fabricating nanodimensional multilayer films using electrochemistry is described. A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta(2)O(5) layer. The rate of Ta consumption, the rate of Ta(2)O(5) expansion, and the dependence of Ta(2)O(5) thickness on anodization conditions have been carefully characterized to enable accurate predictions of the resulting thicknesses of both layers. Due to strong planarization action of the anodization process, the resulting interfaces Ta/Ta(2)O(5) and Ta(2)O(5)/electrolyte are remarkably smooth. The next layer of Ta is deposited on top of Ta(2)O(5), and the process is repeated as many times as needed. The Ta(2)O(5) layers are amorphous and pinhole free. We report fabrication of 10-layer structures with pitches ranging from 200 nm down to 12 nm and with excellent uniformity between the layers. The smallest achieved thickness of Ta layers is only 2.8 +/- 0.1 nm. The edges of such films, after proper polishing and etching, could serve as templates in nanoimprint lithography and in other applications.     

Sensitivity enhancement of integrated optical sensors by use of thin high-index films

The proportion of power carried in the superstrate medium by the guided modes of integrated optical waveguides can be increased by the addition of a thin high-index film. Enhanced refractive-index sensing is demonstrated with channel waveguide Mach-Zehnder interferometers with Ta(2)O(5) overlays. Sensitivity increases by a factor greater than 50, and a detection limit better than 5 x 10(-7) is obtained. This approach is broadly applicable to sensing at waveguide surfaces where the strength of evanescent fields dictates performance.     

改善有机片式固体钽电解电容器性能工艺研究

研究了在被膜过程中表面活性处理及掺杂对聚合物片式钽电容器容量、耐压、等效串联电阻(ESR)等特性的影响。研究结果表明表面活性处理后可以有效改善Ta2O5/PEDOT界面间的匹配,提高电容器容量引出效率;通过添加中间阻隔层(硅烷偶联剂)可以有效地阻挡杂质氧化性离子进入介质膜Ta2O5层,降低聚合物片式钽电容器的漏电流,提高耐压特性;实验结果表明在掺杂剂溶液的浓度为3%,补形成电压为赋能电压的70%时,能有效降低电容器ESR及漏电流。     

Determination of the refractive indices of layers in a multilayer stack by a guided-wave technique

The m-lines technique is used to measure the refractive indices and thicknesses of layers embedded in a multilayer stack. The multilayer considered is deposited by ion plating. Its formula is silica-H-L-H-L-H-air, where H and L denote Ta(2)O(5) and SiO(2)lambda/4 layers, respectively, with lambda = 514.5 nm. Measurements indicate that the refractive index of Ta(2)O(5) is 5 x 10(-3) greater when the layer is close to air than when the layer is inside the coating and that the Ta(2)O(5) is slightly more birefringent.     

Design methodology of refractive index engineering by implantation of high-energy particles in electro-optic materials

Slab waveguides were constructed in K(1-x)Li(x)Ta(1-y)Nb(y)O(3) crystals by the implantation of (12)C(+4) ions at 30 MeV and (16)O(+5) ions at 30 and 40 MeV. The waveguides were characterized by a prism coupler setup. A refractive index drop of 10.9% was observed in a layer formed by the implantation of (16)O(+5) ions at 30 MeV. The carbon-implanted waveguides were found to be thermally stable after annealing at 450 degrees C. A semiempirical formula for predicting the change in the refractive index given the parameters of the implantation process was developed. It is argued that the combination of the basic implantation process with the semiempirical formula can be developed to become a generic method for constructing complex electro-optic circuits with a wave-guided architecture.     

钛基上含钽涂层的热分解法制备

以金属钽层作为钛阳极的中间层可提高阳极的使用寿命,而热分解法制备涂层操作方便、工艺简单且成本低.考察了五氯化钽正丁醇溶液在氮气(≥99.99%)中的热分解过程,并以五氯化钽正丁醇溶液为先驱体,在氩气(≥99.99%)中采用涂覆烧结的热分解法在钛基体上制备了含钽涂层,考察了热分解温度、涂覆次数对涂层表面形貌、相结构和结合...     

热处理对MIM薄膜二极管Ta2O5绝缘膜微结构及其I-U特性的影响

制备了一种用于有源矩阵液晶显示、具有对称结构的MIM薄膜二极管 ,其中Ta2 O5膜采用溅射 /阳极氧化两步法工艺制成。对绝缘膜进行真空热处理 (一步热处理 )和经真空热处理后再进行大气热处理 (真空 /大气两步热处理 )。用原子力显微镜和透射电子显微镜分析了Ta2 O5膜的微结构 ,测试了MIM薄膜二极管的I U特性曲线。讨论了热处理对Ta2 O5绝缘膜微结构和MIM薄膜二极管I U特性的影响 ,并指出了MIM薄膜二极管I U特性和绝缘膜微结构之间的关系     

Electrical characteristics of Ti-O/Ta2O5 thin film sputtered on Ta/Ti/Al2O3 substrate

The electrical characteristics of Ti-O/Ta₂O₅ films sputtered on Ta/Ti/Al₂O₃ substrate were investigated. Ta (tantalum) was used for the bottom and upper electrodes for the purpose of simplifying the fabrication process and Al₂O₃ substrates were used, which are needed in integral passive devices. Ta/Ti-O/Ta₂O₅/Ta/Ti/Al₂O₃ capacitors were annealed at 700 °C for 60 s in vacuum. The X-ray diffraction pattern (XRD) results showed that as-deposited Ta had a highly preferred orientation, but Ta₂O₅ film had amorphous structure, which was transformed to crystallization structure by rapid thermal heat treatment. We examined the log J-E and C-V characteristics of the dielectric thin films deposited on the Ta bottom electrode. From these results, we concluded that the leakage current could be reduced by introducing a Ti-O buffer layer. The conduction mechanisms of Ta/Ti-O/Ta₂O₅/Ta/Ti/Al₂O₃ capacitors could be interpreted appropriately by hopping conduction in lower field (E<1×10⁵ V/cm) and space-charge-limited current in higher fields (1×10⁵ V/cm<E).     

Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators

The characteristics and mechanism of low-voltage-driven thin-film electroluminescent (TFEL) devices with low-resistivity (10(6)-10(7)-Omega cm) SiO(2)/Ta(2) O(5) and Al(2)O(3)/Ta(2)O(5) stacked insulating films have been studied. At 50-Hz sinusoidal wave voltage excitation, the threshold voltage of devices with a ZnS:Mn emitting layer is below 40 V, and the brightness and luminous efficiency are above 1000 cd/m(2) and 4 lm/W, respectively, with 60 V voltage. The characteristics of brightness versus voltage (B-V) curves, integrated charge versus voltage (Q-V) figures, and luminous efficiency versus voltage (eta-V) characteristics are different from conventional devices. The study of a special semiconductor layer-a thin probe-doped layer located at a different part of the pure ZnS layer-has proved that the excitation efficiency is not homogeneous across the emitting layer in this kind of device, and its value decreases from the anode toward the cathode, which is opposite of that made with TFEL devices with high-resistivity insulators. By offering a model of space-charge-limited current, the mechanism of low-voltage-driven thin-film electroluminescence, its optoelectronic characteristics, and the distribution characteristics of excitation efficiency across the emitting layer can be thoroughly explained.     

Piezoelectric tantalum pentoxide studied for optical tunable applications

Piezoelectric transparent thin films are of great interest for use in tunable filters. We present experimental results on Ta2O5 single layers coated on fused-silica substrates with an electron-beam deposition process. Above 450 degrees C, coatings change from an amorphous to a polycrystallized structure. When this structure shows a preferred orientation matching the piezoelectric tensor of the Ta2O5 crystal and the external electric field, variation in the piezoelectric layer thickness is expected. We detail experimental results in terms of optical (spectrophotometric and scattering measurements) and nonoptical characterizations (x-ray diffraction and scanning electron microscopy). Then the resultant thickness variation under oscillating applied voltage is measured with an extrinsic Fabry-Perot interferometer setup.     

Tantalum capping on platinum thin heater for selective area heating

The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 °C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm^− 1. These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping.     

Metastable Beta Titanium Alloys for Orthopedic Applications

This article provides an overview of metastable β titanium alloys either being utilized or being considered for use in orthopedic applications. The effects of thermomechanical processing on the mechanical properties (e.g., elastic modulus, tensile, wear and high cycle fatigue performance) of Ti‐15Mo‐0.2O, Ti‐12Mo‐6Zr‐2Fe (TMZF), Ti‐29Nb‐13Ta‐4.6Zr and Ti‐35Nb‐7Zr‐5Ta are reviewed. The osteointegration behavior of Ti‐29Nb‐13Ta‐4.6Zr and Ti‐35Nb‐7Zr‐5Ta‐O alloys is also presented.     

Low blank isotope ratio measurements of rhenium, osmium, and platinum using tantalum filaments with negative thermal ionization mass spectrometry

Platinum is most commonly used as a filament for Re and Os isotopic measurements, but it contains impurities of Re and Os. Tantalum is low in platinum group elements (PGE) and in Re, but it is not used for negative thermal ionization mass spectrometry because of high electron emission and high reactivity with O(2). High thermal electron emission from Ta distorts the preoptimized ion source optics. In addition, Ta consumes O(2), leaving little for samples, but O(2) is essential for isotopic ratio measurements of PGE and Re as they are measured as negatively charged oxides, such as OsO(3)(-) and PtO(2)(-). These problems are solved by prebaking a filament to remove tantalum oxides before sample loading, keeping relatively high filament temperatures and high O(2) pressures (P(O)((2))) during the sample run, and lowering the potential difference between the filament and the draw-out plate. At P(O)((2)) of ～1 × 10(-)(5) Torr in the source, strong (>10 V) stable (>6 h) peaks of ReO(4)(-), OsO(3)(-), and PtO(2)(-) are obtained at 750 °C for Re, 850 °C for Pt, and over 900 °C for Os. Accurate isotopic ratio measurements of Re, Os, and Pt at picogram levels are possible using Ta filaments.     

Velocity matching of a GaAs electro-optic modulator

New designs for the velocity matching of a deep-etched semiconductor electro-optic modulator are presented. A tantalum pentoxide (Ta2O5) coating is considered here for achieving velocity matching between the microwave and the optical signals. The effects of the velocity mismatch, the conductor loss, the dielectric loss, and the impedance mismatch are studied in relation to the optical bandwidth of a high-speed semiconductor modulator. It is shown that both the dielectric loss and the impedance matching play key roles for velocity-matched high-speed modulators with low conductor loss. The effects of Ta2O5 thickness on the overall bandwidth and on the half-wave voltage-length product VpiL are also reported.     

Ba(Mg1/3Ta2/3)O3合成过程及烧结性的研究

利用DTA／TGA、XRD、SEM等分析手段，研究了不同起始原料制备的BMT合成过程及其烧结行为，发现以Ta2O5·xH2O为起始原料，可减少合成过程中产生的中间相，在较低的温度下合成单相BMT，改善了其烧结性．     

Fluorescence of Ta(2)O(5) thin films doped by kilo-electron-volt Er implantation: application to microcavities

Luminescent layers are prepared by the implantation of kilo-electron-volt Er ions into tantalum pentoxide (Ta(2)O(5)) thin films made by ion plating. The implantation fluences range from 3.3 × 10(14) to 2 × 10(15) ions/cm(2), and the energies range from 190 to 380 keV. Refractive index, extinction coefficient, and losses on guided propagation are investigated. We show that these Er-implanted layers present an absorption as low as that of the nonimplanted films. When optically pumped with an Ar(+) laser (λ = 0.488 μm) beam, implanted films show peaked fluorescence spectra centered near 1.53 and 0.532 μm. We show that the fluorescence intensity is correlated with the intensity of the pump beam in the region where Er ions are implanted. Radiation patterns of Er ions located inside a single layer or inside a Ta(2)O(5)/SiO(2) dielectric stack made by ion plating are also investigated. We show that, in any case, spontaneous emission of Er ions can be spatially controlled.     

Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to a Cu agglomeration. To suppress the Cu agglomeration on the Ta layer, a capping layer was deposited on the Cu/Ta/Si structure using Ta or SiO₂ as a suppressor. In the case of the Ta suppressor, the agglomeration of Cu was observed between two distorted Ta films due to the difference in thermal expansion between the Cu film and the Ta film at high temperature. On the other hand, the SiO₂ layer was found to be suitable as a suppressor, and the Cu agglomeration did not occur even after annealing at 650 °C by the suppression of the Cu diffusion.     

Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer

Cu/Ta/Si (100) structures deposited by the non-mass separated ion beam deposition system showed a slight resistivity increase at 650 °C due to a Cu agglomeration. To suppress the Cu agglomeration on the Ta layer, a capping layer was deposited on the Cu/Ta/Si structure using Ta or SiO₂ as a suppressor. In the case of the Ta suppressor, the agglomeration of Cu was observed between two distorted Ta films due to the difference in thermal expansion between the Cu filmand the Ta film at high temperature. On the other hand, the SiO₂ layer was found to be suitable as a suppressor, and the Cu agglomeration did not occur even after annealing at 650 °C by the suppression of the Cu diffusion.     

Polarimetric optical fiber refractometer

An optical fiber refractometer based on a photometric return-path birefringence sensor is proposed. For measuring the refractive index, the phase shift between polarization components on total internal reflection inside a refractometric prism is used. Several kinds of refractometric prism are described. It is shown that a refractive-index sensitivity of 0.0001 and higher for a wide range of index values is attainable.