Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.     

Cavity Enhancement of Single Quantum Dot Emission in the Blue

Cavity-enhanced single-photon emission in the blue spectral region was measured from single InGaN/GaN quantum dots. The low-Q microcavities used were characterized using micro-reflectance spectroscopy where the source was the enhanced blue output from a photonic crystal fibre. Micro-photoluminescence was observed from several cavities and found to be ~10 times stronger than typical InGaN quantum dot emission without a cavity. The measurements were performed using non-linear excitation spectroscopy in order to suppress the background emission from the underlying wetting layer.     

Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot

Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.     

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240°C, InAs nano dots (width: 20–40 nm, height: 1.5–2.0 nm) were fabricated. At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As₄ irradiations. These were not collapsed and considered to high crystalline dots.     

Electronic structures of GaAs/Al x Ga1-x As quantum double rings

In the framework of effective mass envelope function theory, the electronic structures of GaAs/Al _x Ga_1-x As quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and Al _x Ga_1-x As and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.     

Quantum Dot - Aluminum phthalocyanine Conjugates perform photodynamic reactions to kill cancer cells via fluorescence resonance energy transfer (FRET)

ABSTRACT: Sulfonated aluminium phthalocyanines (AlPcSs), commonly used photosensitizers (PSs) for photodynamic therapy of cancers (PDT), were conjugated with amine-dihydrolipoic acid coated quantum dots (QDs) by an electrostatic binding achieving 70 AlPcSs per QD. The AlPcS-QD conjugates can utilize the intense light absorptions of conjugated QDs to indirectly excite AlPcSs producing singlet oxygen via fluorescence resonance energy transfer (FRET), suggesting a new excitation model for PDT. The AlPcS-QD conjugates easily penetrated into human nasopharyngeal carcinoma cells (KB cells) and carried out the FRET in cells with efficiency around 80%. Under the irradiation of a 532 nm laser, which is at the absorption region of QDs but not fit for the absorptions of AlPcSs, the cellular AlPcS-QD conjugates can destroy the most cancer cells via FRET mediated PDT, demonstrating the potential of this new strategy for PDT.     

Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors

We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs). The strain distribution of three different shaped quantum dots (QDs) with a same ratio of the base to the vertical aspect is calculated by using the short-range valence-force-field (VFF) approach. The calculated results show that the hydrostatic strain ɛ_H varies little with change of the shape, while the biaxial strain ɛ_B changes a lot for different shapes of QDs. The recursion method is used to calculate the energy levels of the bound states in QDs. Compared with the strain, the shape plays a key role in the difference of electronic bound energy levels. The numerical results show that the deference of bound energy levels of lenslike InAs QD matches well with the experimental results. Moreover, the pyramid-shaped QD has the greatest difference from the measured experimental data.     

Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)

Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The essential role of arsenic in nanohole formation is demonstrated sequentially, from the initial Ga droplets to the final stage consisting of nanoholes surrounded by ringlike structures at the surface and Ga droplets consumed. The kinetics of local etching depends on the arsenic flux intensity, while the ringlike structures are basically the same as those formed underneath the droplets in the absence of arsenic. These structures show motifs with well-defined crystalline facets that correspond to those expected from surface energy minimization. These experimental results are qualitatively analyzed for a better understanding of the nanohole formation underlying processes.     

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.     

The Role of Intrinsic and Surface States on the Emission Properties of Colloidal CdSe and CdSe/ZnS Quantum Dots

Time Resolved Photoluminescence (TRPL) measurements on the picosecond time scale (temporal resolution of 17 ps) on colloidal CdSe and CdSe/ZnS Quantum Dots (QDs) were performed. Transient PL spectra reveal three emission peaks with different lifetimes (60 ps, 460 ps and 9–10 ns, from the bluest to the reddest peak). By considering the characteristic decay times and by comparing the energetic separations among the states with those theoretically expected, we attribute the two higher energy peaks to ± 1 ^U and ± 1 ^L bright states of the fine structure picture of spherical CdSe QDs, and the third one to surface states emission. We show that the contribution of surface emission to the PL results to be different for the two samples studied (67% in the CdSe QDs and 32% in CdSe/ZnS QDs), confirming the decisive role of the ZnS shell in the improvement of the surface passivation.     

主链含三嗪结构的聚对苯撑乙炔的合成及表征

用含1,3,5-三嗪的二元碘代芳烃和1,4-二乙炔苯衍生物,通过Sonogashira钯催化偶联反应,合成了主链含1,3,5-三嗪结构的聚对苯撑乙炔共轭聚合物P1-P3,并用红外光谱、核磁共振氢谱和碳谱对聚合物的结构进行了表征。考察了反应时间、反应温度、单体的摩尔投料比和催化剂用量对聚合物相对分子质量及其分布的影响。紫外及荧光光谱表明,聚合物紫外最大吸收出现在320～380 nm,P2和P3的溶液荧光最大发光波长在442 nm处,且荧光较强,是一类蓝色聚合物发光材料。     

Photoluminescence,FTIR, and electrical characterization of samarium(III) chloride‐doped polyaniline

The synthesized polyaniline (PANI) is doped with different concentrations of Samarium(III) chloride (SmCl₃). The electrical conductivity of doped PANI samples has been measured in the temperature range (300–400K). It has been found that dc conductivity increases with the increase of dopant concentration. Different parameters, based on the conductivity, such as pre‐exponential factor (σ₀) and activation energy (ΔE) have also been calculated. These parameters exhibit information about the nature and suitability of the dopant. Doped samples are characterized by FTIR and photoluminescence studies, which show the interaction of dopant with PANI. Two sharp peaks of different intensities from PL spectra at 388 and 604nm have appeared in doped PANI, which might be due to the effect of SmCl₃. It has been observed that SmCl₃ (dopant) shows noticeable changes in the electrical and spectroscopic properties of doped PANI. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100) Substrate

An example of InAsSbP quaternary quantum dots (QDs), pits and dots–pits cooperative structures’ growth on InAs(100) substrates by liquid phase epitaxy (LPE) is reported. The interaction and surface morphology of the dots–pits combinations are investigated by the high-resolution scanning electron microscope. Bimodal growth mechanism for the both QDs and pits nucleation is observed. Cooperative structures consist of the QDs banded by pits, as well as the “large” pits banded by the quantum wires are detected. The composition of the islands and the pits edges is found to be quaternary, enriched by antimony and phosphorus, respectively. This repartition is caused by dissociation of the wetting layer, followed by migration (surface diffusion) of the Sb and P atoms in opposite directions. The “small” QDs average density ranges from 0.8 to 2 × 10⁹ cm⁻², with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the “small” pits is equal to (6–10) × 10⁹ cm⁻² with dimensions of 5–40 nm in width and depth. Lifshits–Slezov-like distribution for the amount and surface density of both “small” QDs and pits versus their average diameter is experimentally detected. A displacement of the absorption edge toward the long wavelength region and enlargement toward the short wavelength region is detected by the Fourier transform infrared spectrometry.     

An Efficient Preparation and Characterization of Nanocomposite Films Based on Poly(vinyl chloride) and Modified ZnO Quantum Dot with an Optically Active Diacid Containing Amino Acid as Coupling Agent

The nanocomposites were manufactured by the incorporation of modified ZnO into the poly(vinyl chloride). ZnO nanoparticles were modified with diacid containing alanine amino acid. Ultrasonic irradiation was used for all process. The PVC/ZnO@DA nanocomposites were investigated by field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, UV–visible spectroscopy, thermogravimetric, and mechanical analysis. Results showed the uniform dispersion of particles in the polymer matrix and ZnO@DA nanoparticles in quantum dot size. The optical properties of PVC were affected by the incorporation of modified quantum dot ZnO; also mechanical properties of PVC/ZnO@DA nanocomposites were improved.     

Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic field B parallel to the wire axis has been calculated as a function of the radius of the wire and magnitude of B, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth of B.     

Magnetotransport measurement of (Ga,Mn)As epilayers with low-temperature annealing

Magnetotransport features of a ferromagnetic semiconductor (Ga,Mn)As epilayer are found to change by annealing at 250 °C. Magnetoresistance curves of the annealed sample indicate that the change in the magnetic easy axis in the film plane as well as the change in the magnetization reversal processes are induced by the enhancement in the contribution of [1 1 0] uniaxial anisotropy. The origin of the enhancement in [1 1 0] uniaxial anisotropy is also discussed.     

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

ABSTRACT: We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in the polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.     

聚乳酸扩链改性及其挤出发泡的研究

采用扩链剂对聚乳酸（PLA）进行扩链改性,研究了扩链剂对PLA流变性能的影响。采用3种不同类型的化学发泡剂：发泡剂A（发泡母粒）、发泡剂B\[自制复合发泡剂：偶氮二甲酰胺（AC发泡剂）/碳酸氢钠(NaHCO3)\]、发泡剂C(自制改性AC发泡剂),利用单螺杆挤出机对PLA进行挤出发泡。采用扫描电子显微镜观察分析了发泡材料的断面泡孔结构。结果表明,加入扩链剂可有效提高PLA的熔体强度和黏度及降低其熔体流动速率,改善PLA的发泡效果,扩链剂含量为0.8份（质量分数,下同）时,发泡材料的发泡效果最好;实验所用的3种发泡剂中,发泡剂C的发泡效果最好,发泡剂含量为1.5份时,发泡样品的表观密度较小（0.6 g/cm3）,泡孔直径最小(约为57 μm),泡孔密度最大（约为7.69×10^6个/cm3）,泡孔分布均匀,无明显泡孔破裂和连通现象。     

Anisotropic Confinement,Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In_0.4Ga_0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.