Van der Waals heterostructures based on three-dimensional topological insulators

Three-dimensional (3D) topological insulators (TIs) have generated tremendous research interest over the past decade due to their topologically-protected surface states with linear dispersion and helical spin texture. The topological surface states offer an important platform to realize topological phase transitions, topological magnetoelectric effects and topological superconductivity via 3D TI-based heterostructures. In this review, we summarize the key findings of magneto and quantum transport properties in 3D TIs and their related heterostructures with normal insulators, ferromagnets and superconductors. For intrinsic 3D TIs, the experimental evidences of the topological surface states and their coupling effects are reviewed. Whereas for 3D TI related heterostructures, we focus on some important phenomenological magnetotransport activities and provide explanations for the proximity-induced topological and quantum effects.     

双拓扑绝缘体介质界面的反射波极化调控特性

本文对两种三维强拓扑绝缘体分界面的反射极化现象进行了研究,得到了线偏振光完全转化的普适性充要条件.通过分析分界面的直接反射率、交叉反射率以及极化转化率,发现该模型利用现有的拓扑绝缘体材料就可以实现线极化波的完全转变,突破了需要新的较小介电常数的拓扑绝缘体材料才能完全转化的限制.该转化过程可以利用克尔旋转角进行验证,并给...     

Indentation fracture toughness of single-crystal Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> topological insulators

Bismuth telluride (Bi₂Te₃) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the way for their application in nanoelectronics. Determination of the fracture toughness plays a crucial role for the potential application of topological insulators in flexible electronics and nanoelectromechanical devices. Using depth-sensing nanoindentation tests, we investigated for the first time the fracture toughness of bulk single crystals of Bi₂Te₃ topological insulators, grown using the Bridgman-Stockbarger method. Our results highlight one of the possible pitfalls of the technology based on topological insulators.

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Scattering from a topological insulator cylinder buried below a slightly rough surface

Electromagnetic scattering from a topological insulator (TI) cylinder buried beneath a rough surface is considered. To account for the interactions of the scattered field and the rough surface, spectral plane wave representation of fields is used along with small perturbation method. Both time-reversal symmetry TI cylinder and time-reversal symmetry broken TI cylinder are considered to evaluate the scattered-transmitted field above the rough surface for different values of the periods of the rough surface and the size of the object. It is observed that co- and cross-polarized field components show a maximum before the time-reversal symmetry is broken. The co-polarized component remains almost constant while the cross-polarized component decreases for time-reversal symmetry broken case.     

A realistic topological p-n junction at the Bi2Se3 (0001) surface based on planar twin boundary defects

We propose a realistic topological p-n junction (TPNJ) by matching two Bi2Se3 (0001) slabs with opposite arrangements of planar twin boundary defects.The atomistic modeling of such a device leads to dislocation defects in the hexagonal lattice in several quintuple layers.Nevertheless,total energy calculations reveal that the interface relaxes,yielding a smooth geometrical transition that preserves the nearest-neighbors fcc-type geometry throughout these defect layers.The electronic,magnetic,and transport properties of the junction have then been calculated at the ab initio level under open boundary conditions,i.e.,employing a thin-film geometry that is infinite along the electron transport direction.Indeed,a p-n junction is obtained with a built-in potential as large as 350 meV.The calculations further reveal the spin texture across the interface with unprecedented detail.As the main result,we obtain non-negligible transmission probabilities around the Γ point,which involve an electron spin-flip process while crossing the interface;     

Spintronics and pseudospintronics in graphene and topological insulators

The two-dimensional electron systems in graphene and in topological insulators are described by massless Dirac equations. Although the two systems have similar Hamiltonians, they are polar opposites in terms of spin-orbit coupling strength. We briefly review the status of efforts to achieve long spin-relaxation times in graphene with its weak spin-orbit coupling, and to achieve large current-induced spin polarizations in topological-insulator surface states that have strong spin-orbit coupling. We also comment on differences between the magnetic responses and dilute-moment coupling properties of the two systems, and on the pseudospin analogue of giant magnetoresistance in bilayer graphene.     

Broadband photovoltaic effect of n-type topological insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films on p-type Si substrates

We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD).The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths.Under the light illumination with a wavelength of 1,000 nm,a short circuit current (Isc) of 19.2 μA and an open circuit voltage (Voc) of 235 mV are achieved.The maximum fill factor (FF) increases with a decrease in the wavelength or light density,achieving a value of 35.6％ under 600 nm illumination.The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale.These findings are important for both the fundamental understanding and solar cell device applications of TI materials.     

Durability of crosslinked polydimethylsyloxanes: the case of composite insulators

Most applications of silicones are linked to their hydrophobic properties and (or) their high resistance to ageing (e.g. thermal ageing and photoageing). However, when placed in extreme environments, these materials can fail as in the case of epoxy/fiber glass composite powerlines insulators, where crosslinked polymethylsyloxanes (PDMSs) are used as the protective envelope (housing) of the insulator. We report on the behavior of both pure/noncrosslinked PDMSs and typical formulations used in industrial insulators, i.e. containing peroxide crosslinked PDMS, alumina trioxide hydrated (ATH) and silica. Special attention is paid on both (i) the sources of potential degradation and (ii) the best analytical methods that can be applied to the study of very complex formulations. (i) Aside from conventional types of ageing such as photo-ageing and thermal, hydrolytic, and service life ageings, treatments with acidic vapors, plasma and ozone possibly generating species from the reaction of a high electric field with air were also performed, which allowed to accelerate electrical and out-door ageings and to obtain differently aged materials. (ii) Aside from conventional analytical methods of polymer degradation such as FTIR/ATR spectroscopy and SEC, TG, hardness measurements, more specific methods like photo/DSC, TG/IR, thermoporosimetry, resistivity and density measurements were also performed to characterize the chemical and physical evolutions of polymer materials. In particular, it was found that treatment with nitric acid vapor has detrimental effects on the properties of both fire retardants (e.g. ATH) and PDMSs, affecting the hardness and resistivity of the formulated material.     

Finite element analysis of substation composite insulators

Composite insulators are rapidly replacing their porcelain counterparts in electrical substation applications. These insulators consist of a glass-reinforced polymer (GRP) rod, with two metal end fittings radially crimped onto the ends of the rod during assembly. In this paper, axisymmetric finite element models are developed to evaluate the mechanical performance of composite insulators under externally applied axial compression. The analyses are performed by assuming both a perfectly bonded interface between the composite rod and the end fittings, and an imperfect interface which permits large relative sliding with Coulomb friction. Results indicate that the perfect interface model is unrealistic since it predicts singular stresses at the interface comer and an overall linear structural response. On the other hand, the imperfect interface model is found to simulate accurately the structural non-linearity caused by relative sliding of the GRP rod within the end fittings. The imperfect interface model has therefore been used to evaluate the effects of interface friction, and the extent of crimping, on the maximum load-bearing capacity of substation composite insulators.     

Durability of crosslinked polydimethylsyloxanes: the case of composite insulators

Abstract

Most applications of silicones are linked to their hydrophobic properties and (or) their high resistance to ageing (e.g. thermal ageing and photoageing). However, when placed in extreme environments, these materials can fail as in the case of epoxy/fiber glass composite powerlines insulators, where crosslinked polymethylsyloxanes (PDMSs) are used as the protective envelope (housing) of the insulator. We report on the behavior of both pure/noncrosslinked PDMSs and typical formulations used in industrial insulators, i.e. containing peroxide crosslinked PDMS, alumina trioxide hydrated (ATH) and silica. Special attention is paid on both (i) the sources of potential degradation and (ii) the best analytical methods that can be applied to the study of very complex formulations. (i) Aside from conventional types of ageing such as photo-ageing and thermal, hydrolytic, and service life ageings, treatments with acidic vapors, plasma and ozone possibly generating species from the reaction of a high electric field with air were also performed, which allowed to accelerate electrical and out-door ageings and to obtain differently aged materials. (ii) Aside from conventional analytical methods of polymer degradation such as FTIR/ATR spectroscopy and SEC, TG, hardness measurements, more specific methods like photo/DSC, TG/IR, thermoporosimetry, resistivity and density measurements were also performed to characterize the chemical and physical evolutions of polymer materials. In particular, it was found that treatment with nitric acid vapor has detrimental effects on the properties of both fire retardants (e.g. ATH) and PDMSs, affecting the hardness and resistivity of the formulated material.     

Suppressing Twin Formation in Bi2Se3 Thin Films

The microstructure of Bi₂Se₃ topological‐insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X‐ray diffraction, X‐ray reflectivity, atomic force microscopy and probe‐corrected scanning transmission electron microscopy. The use of a rough Fe‐doped InP(111)B substrate results in complete suppression of twin formation in the Bi₂Se₃ thin films and a perfect interface between the films and their substrates. The only type of structural defect that persists in the twin‐free films is an antiphase domain boundary, which is associated with variations in substrate height. We also show that the substrate surface termination influences which family of twin domains dominates.     

Impurity band Mott insulators: a new route to high Tc superconductivity

Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of ‘impurity state electrons’ in crystalline ‘band insulators’, such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.     

拓扑关系与性质及其在空间推理中的应用

首先根据笔者以前的研究成果,给出了两个空间实体之间完备、唯一的拓扑关系形式化表达,进而论述了它们之间存在的性质。从这些性质出发,得出了相互间空间关系复合的结果。空间推理从广义上而言,是指从已知信息推导未知信息的理论和方法,据其使用的理论基础,可以分为代数推理和逻辑推理,空间复合的结果可以直接用于代数推理,又可以作为前提条件用于逻辑推理。     

Impurity band Mott insulators: a new route to high Tc superconductivity

Abstract

Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of ‘impurity state electrons’ in crystalline ‘band insulators’, such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.     

Some properties of topological pressure of a semigroup of continuous maps

Based on the work of Ma and Wu,[9 Ma D, Wu M. Topological pressure and topological entropy of a semigroup of maps. Discrete Contin Dyn Syst. 2011;31:545–557.[Crossref], [Web of Science ®] , [Google Scholar]] some equivalent definitions of topological pressure of a semigroup of continuous maps are given and several of their basic properties are provided by using separated sets and spanning sets. We also answer an open problem of Bi? and Urbański.[19 Bi? A, Urbański M. Some remarks on topological entropy of a semigroup of continuous maps. Cubo. 2006;8:63–71. [Google Scholar]] That is, letting f_i, i = 2, … , k, be homeomorphisms acting on a compact metric space, G₁ = {id_X, f₂, … , f_k}, G^{? 1}₁ = {id_X, f^{? 1}₂, …, f_k^{? 1}} and letting G and G^?1 denote the semigroups generated by G₁ and G^{? 1}₁, respectively, we give an example showing that the topological entropy of G does not equal the topological entropy of G^?1.