VLS and VS effect on ferromagnetic behaviour of SnO2 nanobelts

Fabrication of SnO₂ nanobelts has been carried out by employing vapour liquid solid (VLS) and vapour solid (VS) mechanism. Nanobelts obtained by VLS mechanism were fabricated at relatively low temperature using Fe powders as a catalyst by means of chemical vapour deposition (CVD) technique. Direct thermal evaporation of SnO₂ nanobelts was carried out at 1350°C in the atmosphere of Argon gas via VS mechanism. In both cases, ramp rate was adjusted to 10°C/min. The structural, compositional and morphological characterisations of synthesised SnO₂ nanobelts were conducted by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X?ray spectroscopy (EDS). Magnetic behaviour of the nanobelts was studied by vibrating sample magnetometer (VSM). Cathodoluminescence (CL) spectra were studied using Renishaw Raman spectroscopy system. The growth of nanobelts is found to be homogeneous and dense. The nanobelts formed by VLS mechanism show ferromagnetic behaviour along with some other exciting results whereas the nanobelts formed by VS mechanism show a diamagnetic behaviour. The observed room temperature ferromagnetism in SnO₂ nanobelts is superior to other oxides.     

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO₂) nanowires have been synthesized at a low substrate temperature of 450 °C via vapor–liquid–solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2–4 μm and diameter of 20–60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO₂ nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO₂ nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 × 10⁻⁴ mbar suggested that a temperature equal to or greater than 450 °C was the best condition for phase pure SnO₂ nanowires growth. The SnO₂ nanowires grown on a SiO₂ substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO₂ NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 μW/cm² UV lamp (330 nm) intensity on the photo detector..     

Density-controllable growth of SnO2 nanowire junction-bridging across electrode for low-temperature NO2 gas detection

The junction-bridging structure of metal oxide nanowires (NWs) improves gas-sensing properties. In this study, an on-chip growth method was used to fabricate gas sensors, it easily and effectively controls NW junctions. SnO₂ NWs were synthesized by thermal evaporation at 800 °C with tin powder as the source. The density of the NW junctions was controlled by changing the mass of the source material. A source material with large mass yielded high-density NW junctions. With electrode spacing of 20 μm, NW junctions were formed from the source material of larger than 2 mg. Gas sensing results revealed that the junction sensors exhibited a good response to NO₂ gas at a concentration of 1–10 ppm. The sensors exhibited a good response to NO₂ gas at low temperature of up to 100 °C and short response–recovery time (~20 s). The sensors also had good selectivity to NO₂ gas. The response (R _gas /R _air) to 1 ppm NO₂ was as high as 22 at 100 °C, whereas the cross gas responses (R _air /R _gas) to 10 ppm CO, 10 ppm H₂S, 100 ppm C₂H₅OH, and 100 ppm NH₃ were negligible (1.1–1.3).     

Synthesis of SnO2@SnS2 core–shell nanorods by double crucible method and their photocatalysis

SnO₂@SnS₂ core–shell structural nanorods were prepared by the solid phase double crucible method. The structure, morphology and optical properties of the as-prepared samples were characterized by X-ray diffraction, transmission electron microscope and ultraviolet–visible–near-infrared spectrophotometer. The results indicated that the mixture of hexagonal phases SnS₂ and tetragonal phase SnO₂ was formed at 400 and 500 °C and the molar ratio of SnO₂ to thioacetamide was 1:3. SnS₂ was uniformly coated on the surface of SnO₂ nanorods, and SnO₂@SnS₂ core–shell nanorods with the shell thickness of about 3–5 nm were obtained. Furthermore, their photocatalytic properties were tested for the degrading of methyl orange in water under visible light (λ > 420 nm) irradiation. Compared with pure SnS₂ nanomaterials, the core–shell nanorods demonstrated more superior photocatalytic activity. These meaningful results had laid certain foundation for further research on metal oxide@metal sulfide core–shell structure nanomaterials.     

Nanofibers Comprising Yolk–Shell Sn@void@SnO/SnO2 and Hollow SnO/SnO2 and SnO2 Nanospheres via the Kirkendall Diffusion Effect and Their Electrochemical Properties

Nanofibers with a unique structure comprising Sn@void@SnO/SnO₂ yolk–shell nanospheres and hollow SnO/SnO₂ and SnO₂ nanospheres are prepared by applying the nanoscale Kirkendall diffusion process in conventional electrospinning process. Under a reducing atmosphere, post‐treatment of tin 2‐ethylhexanoate‐polyvinylpyrrolidone electrospun nanofibers produce carbon nanofibers with embedded spherical Sn nanopowders. The Sn nanopowders are linearly aligned along the carbon nanofiber axis without aggregation of the nanopowders. Under an air atmosphere, oxidation of the Sn–C composite nanofibers produce nanofibers comprising Sn@void@SnO/SnO₂ yolk–shell nanospheres and hollow SnO/SnO₂ and SnO₂ nanospheres, depending on the post‐treatment temperature. The mean sizes of the hollow nanospheres embedded within tin oxide nanofibers post‐treated at 500 °C and 600 °C are 146 and 117 nm, respectively. For the 250th cycle, the discharge capacities of the nanofibers prepared by the nanoscale Kirkendall diffusion process post‐treated at 400 °C, 500 °C, and 600 °C at a high current density of 2 A g^?1 are 663, 630, and 567 mA h g^?1, respectively. The corresponding capacity retentions are 77%, 84%, and 78%, as calculated from the second cycle. The nanofibers prepared by applying the nanoscale Kirkendall diffusion process exhibit superior electrochemical properties compared with those of the porous‐structured SnO₂ nanofibers prepared by the conventional post‐treatment process.     

Phase transformation behavior of zinc metastannates obtained by aqueous precipitation at different temperatures

Phase transformation studies in ZnO–SnO₂ system from zinc metastannate (ZnSnO₃) to zinc orthostannate (Zn₂SnO₄) with annealing temperature are reported. Non-centrosymmetric oxides show unique symmetry dependent and spontaneous polarization properties, which are technologically important. ZnSnO₃ particles were synthesized by a simple aqueous synthesis at low temperatures designed with the assistance of potential–pH diagrams. ZnSnO₃ particles synthesized at 4 °C are more porous losing the ilmenite structure upon annealing at 200 °C, while the other samples prepared at higher temperatures (25–65 °C) becomes amorphous at 300 °C. The phase transformation into the inverse spinel orthostannate phase occurs around 750 °C in all the samples.     

Fast response time alcohol gas sensor using nanocrystalline F-doped SnO2 films derived via sol–gel method

Pure and fluorine-modified tin oxide (SnO₂) thin films (250–300 nm) were uniformly deposited on corning glass substrate using sol–gel technique to fabricate SnO₂-based resistive sensors for ethanol detection. The characteristic properties of the multicoatings have been investigated, including their electrical conductivity and optical transparency in visible IR range. Pure SnO₂ films exhibited a visible transmission of 90% compared with F-doped films (80% for low doping and 60% for high doping). F-doped SnO₂ films exhibited lower resistivity (0· 12 × 10^???4 Ω  cm) compared with the pure (14·16 × 10^???4 Ω  cm) one. X-ray diffraction and scanning electron microscopy techniques were used to analyse the structure and surface morphology of the prepared films. Resistance change was studied at different temperatures (523–623 K) with metallic contacts of silver in air and in presence of different ethanol vapour concentrations. Comparative gas-sensing results revealed that the prepared F-doped SnO₂ sensor exhibited the lowest response and recovery times of 10 and 13 s, respectively whereas that of pure SnO₂ gas sensor, 32 and 65 s, respectively. The maximum sensitivities of both gas sensors were obtained at 623 K.     

Sensor properties of Pt doped SnO2 thin films for detecting CO

Polycristalline Pt-doped SnO₂ thin films have been integrated to silicon substrate by ultrasonic spray deposition. This deposition technique differs from the usual SnO₂ deposition methods by using a liquid source. It allows one to obtain a very fine and homogeneous dispersion of Pt aggregates which act as a catalyst for the low temperature CO detection (25–100°C) by conductance change. The influence of synthesis temperature (460–560°C), concentration of Pt additive (0.1–5 at.%) on gas sensitivity has been studied. The realisation of gas sensor includes a gas sensitive highly porous layer (SnO₂/Pt, thickness: ∼1 μm). The results of electrical measurements under 300 ppm of CO for thin films in a dynamic and quasistatic regime are discussed. The narrow peak of gas sensitivity in the range of low temperatures (25–100°C) is obtained for about 2 at.% Pt in the SnO₂ film.     

Effect of substrate type, dopant and thermal treatment on physicochemical properties of TiO2–SnO2 sol–gel films

Thin nanocrystalline TiO₂–SnO₂ films (0–50 mol% SnO₂) were prepared on quartz and stainless steel substrates by sol–gel coating method. The obtained films were investigated by XRD, Raman spectroscopy and XPS. The size of the nanocrystallites was determined by XRD–LB measurements. We ascertained that the increase of treatment temperature and concentration of SnO₂ in the films favour the crystallization of rutile phase. The substrate type influences more substantially the phase composition of the TiO₂–SnO₂ films. It was established that a penetration of elements took place from the substrate into the films. TiO₂ films deposited on quartz substrate include a Si which stabilizes anatase phase up to 600 °C. The films which are deposited on stainless steel substrate and treated at 700 °C show the presence of significant quantity of rutile phase. This phenomenon could be explained by the combined effect of Sn dopant as well as Fe and Cr, which also are penetrated in the films from the steel substrate. The titania films doped up to 10 mol% SnO₂ on stainless steel possess only 12–17 nm anatase crystallites, whereas the TiO₂–(10–50 mol%) SnO₂ films contain very fine grain rutile phase (4 nm).     

Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

Antimony (Sb) doping of SnO₂ nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO₂ NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO₂ NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO₂ NW FETs.     

Structural,morphological, optical and gas sensing properties of pure and Ce doped SnO<Subscript>2</Subscript> thin films prepared by jet nebulizer spray pyrolysis (JNSP) technique

Pure and cerium (Ce) doped tin oxide (SnO₂) thin films are prepared on glass substrates by jet nebulizer spray pyrolysis technique at 450 °C. The synthesized films are characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive analysis X-ray, ultra violet visible spectrometer (UV–Vis) and stylus profilometer. Crystalline structure, crystallite size, lattice parameters, texture coefficient and stacking fault of the SnO₂ thin films have been determined using X-ray diffractometer. The XRD results indicate that the films are grown with (110) plane preferred orientation. The surface morphology, elemental analysis and film thickness of the SnO₂ films are analyzed and discussed. Optical band gap energy are calculated with transmittance data obtained from UV–Visible spectra. Optical characterization reveals that the band gap energy is found decreased from 3.49 to 2.68 eV. Pure and Ce doped SnO₂ thin film gas sensors are fabricated and their gas sensing properties are tested for various gases maintained at different temperature between 150 and 250 °C. The 10 wt% Ce doped SnO₂ sensor shows good selectivity towards ethanol (at operating temperature 250 °C). The influence of Ce concentration and operating temperature on the sensor performance is discussed. The better sensing ability for ethanol is observed compared with methanol, acetone, ammonia, and 2-methoxy ethanol gases.     

Process study of chemically vapour-deposited SnOx (x≈2) films

The physical characteristics of SnO_x(x≈2) films deposited onto Pyrex glass substrates by chemical vapour deposition are studied. The temperature dependence indicates that films deposited at 600 °C have good polycrystallinity. The electrical conductivity of the 600 °C films is mainly controlled by the variation in the SnCl₄ vapour flow rate. A subsequent thermal annealing process can even reduce the sheet resistance to 400ω/□. In addition, the visible absorption shows that the 600 °C films tend to lose their transparency in the short wavelength range of the visible spectrum.     

Hydrothermal synthesis of hierarchical flower-like α-CNTs/SnO2 architectures with enhanced photocatalytic activity

The hierarchical flower-like α-CNTs/SnO₂ architectures composed of curved sheets are synthesized with hydrothermal method at 160?°C for 8?h. The α-CNTs/SnO₂ composite was doped with α-CNTs during preparation, the photocatalytic activity of α-CNTs/SnO₂ was evaluated by photodegradation of Rhodamine B (RhB) under simulated visible light. The results showed that the photocatalytic activity of α-CNTs/SnO₂ for degradation of RhB was up to 90.35% within 120?min, which was much higher than that of pure compound. It was significantly found that the introduction of α-CNTs, which may suppressed the recombination of photogenerated electron-hole pairs on the interface of SnO₂, leading to enhanced photocatalytic activity.     

Effect of processing and palladium doping on the properties of tin oxide based thick film gas sensors

In the present work, solid-state reaction and sol–gel route derived pure tin oxide (SnO₂) powders have been used to develop the palladium (Pd)-doped SnO₂ thick film sensors for detection of liquefied petroleum gas (LPG). Efforts have been made to study the gas sensing characteristics i.e., sensor response, response/recovery time and repeatability of the thick film sensors. The response of the sensors has been investigated at different operating temperatures from 200 to 350 °C in order to optimise the operating temperature which yields the maximum response upon exposure to fixed concentration of LPG. The optimum temperature is kept constant to facilitate the gas sensing characteristics as a function of the various concentration (0.25–5 vol%) of LPG. The structural and microstructural properties of Pd-doped SnO₂ powder and developed sensors have been studied by performing X-ray diffraction and field emission electron microscopy measurements. The improvement in the response along with better response and recovery time have been correlated to the reduction in crystallite size of SnO₂ powder and morphology of printed sensor in thick film form. It is found that the thick film sensor developed by using sol–gel route derived SnO₂ powder with an optimum doping of 1 wt% Pd is extremely sensitive (86 %) to LPG at 350 °C.     

The role of the SnO2 interphase in an alumina/glass composite: a fractographic study

The role of tin dioxide (SnO₂) interphase for the alumina/glass composite system was investigated using fractography. Alumina (Al₂O₃) and glass form a strong chemical bond which is undesirable for toughness in a ceramic matrix composite. SnO₂ interphase was incorporated to prevent this strong bond between alumina and glass. SnO₂ was deposited on Al₂O₃ substrates via chemical vapour deposition and bonded with glass. The role of the interphase was then studied by characterizing the fracture surfaces of the bend test and special composite disc samples loaded in diametral compression. Bend tests results showed that the SnO₂ interphase and/or the SnO₂/Al₂O₃ interface acted as a plane of weakness. Secondary cracking at 90° to the major crack direction was observed along this plane of weakness, which appears to be in accord with the Cook and Gordon model. Crack deflection and secondary cracking were also observed in the SnO₂ region of the compression samples. These results indicate the suitability of SnO₂ interphase for the alumina/glass composite system.     

Effect of sintering temperature on the dielectric and varistor properties of SnO<Subscript>2</Subscript>–Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> composite ceramics

The effect of sintering temperature from 1350 to 1450 °C on the dielectric and varistor properties of SnO₂–Zn₂SnO₄ composite ceramics has been systematically investigated. With the increasing of sintering temperature, the average grain size increased from about 1 to 5 μm and the breakdown electric field decreased from 117 to 3 V/mm. The relative dielectric constant increased with sintering temperature and it achieved the maximum of 1.2 × 10⁴ (40 Hz, 0 °C) at 1425 °C. With excessive increasing of sintering temperature, the relative dielectric constant decreased and the microstructure of the ceramic bulk became porous. In the spectra of imaginary part of the complex modulus, a peak was exhibited and the peak’s position shifted to high frequency with increasing testing or sintering temperature. The activation energy related to the peak was about 0.4 eV and this value was thought to be associated with the oxygen vacancies. Based on the sintering effect, the mechanism of oxygen vacancies in SnO₂–Zn₂SnO₄ composite ceramics was proposed and accordingly, the varistor and giant permittivity properties are well understood based on the grain boundary barrier model.     

Synthesis and enhanced ethanol sensing performance of nanostructured Sr doped SnO<Subscript>2</Subscript> thick film sensor

In the present paper we have synthesized pristine and Sr doped SnO₂ in order to prepare a selective ethanol sensor with rapid response–recovery time and good repeatability. Pristine as well as Sr (2, 4 and 6 mol%) doped SnO₂ nanostructured powder was synthesized by using a facile co-precipitation method. The samples were characterized by TG–DTA, XRD, HR-TEM, SAED, FEG-SEM, SEM–EDAX, XPS, UV–Vis and FTIR spectroscopy techniques. The gas response performance of sensor towards ethanol, acetone, liquid petroleum gas and ammonia has been carried out. The results demonstrate that Sr doping in SnO₂ systematically decreases crystallite size, increases the porosity and hence enhances the gas response properties of pristine SnO₂ viz. lower operating temperature, higher ethanol response and better selectivity towards ethanol. The response and recovery time for 4 mol% Sr doped SnO₂ thick film sensor at the operating temperature of 300 °C were 2 and 7 s, respectively.     

Structural and optoelectronic properties of indium doped SnO2 thin films deposited by sol gel technique

Indium doped tin oxide (SnO₂:In) thin films were deposited on glass substrates by sol–gel dip coating technique. X-ray diffraction pattern of SnO₂:In thin films annealed at 500 °C showed tetragonal phase with preferred orientation in T (110) plane. The grain size of tin oxide (SnO₂) in SnO₂:In thin films are found to be 6 nm which makes them suitable for gas sensing applications. AFM studies showed an inhibition of grain growth with increase in indium concentration. The rms roughness value of SnO₂:In thin films are found to 1 % of film thickness which makes them suitable for optoelectronic applications. The film surface revealed a kurtosis values below 3 indicating relatively flat surface which make them favorable for the production of high-quality transparent conducting electrodes for organic light-emitting diodes and flexible displays. X-ray photoelectron spectroscopy gives Sn 3d, In 3d and O 1s spectra on SnO₂:In thin film which revealed the presence of oxygen vacancies in the SnO₂:In thin film. These SnO₂:In films acquire n-type conductivity for 0–3 mol% indium doping concentration and p type for 5 and 7 mol% indium doping concentration in SnO₂ films. An average transmittance of >80 % (in ultra-violet–Vis region) was observed for all the SnO₂:In films he In doped SnO₂ thin films demonstrated the tailoring of band gap values. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in indium doping concentration which may be due structural defects or luminescent centers, such as nanocrystals and defects in the SnO₂.     

SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material

Highly transparent and highly conducting films of SnO₂:F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2·5 lit. min⁻¹ flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1·02 wt%. The Hall experiment showed that the films prepared at optimum conditions had high carrier concentration and high mobility.     

Effect of oxidation and annealing temperature on optical and structural properties of SnO2

Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. The effect of oxidation temperature on the optical and structural properties of SnO₂ films were investigated. Higher transmittance, lower absorption and lesser structural defects were obtained at higher temperatures. Optical bandgap increases with temperature, while the Urbach energy showed reduction. The X-ray diffraction studies showed that at lower temperatures (300, 350 °C), a combined phase of SnO and SnO₂ was obtained, while at higher temperatures (400, 450 °C), a nearly polycrystalline SnO₂ film with preferred orientation of (101) was produced. Annealing of the samples at 500–650 °C caused the transmittance and optical bandgap increased, while the absorption decreased. Reduction of the Urbach energy after annealing could be attributed to the reduction of the degree of thermal disorder. AFM studies showed that although the thin films were annealed under similar condition, their roughness was not similar because of different oxidation temperatures, which means that initial oxidation temperature played an important role on surface uniformity of SnO₂ thin films.