基于Multi-Capture结构的扫描链优化算法

提出了一种基于多扫描链Multi-capture结构的扫描链优化算法,通过构造具有最小相关度的多扫描链结构,并利用Multi-capture内部响应复用为激励以侦测故障的原理,达到极大压缩测试向量长度的目的。实验结果表明,该优化算法平均优化率可以达到30％左右。     

考虑测试功耗的扫描链划分新方法

提出考虑测试功耗的扫描链划分新方法.首先为基于扫描设计电路的峰值测试功耗和平均功耗建模,得出测试功耗主要由内部节点的翻转引起的结论,因此考虑多条扫描链情况,从输入测试集中寻找相容测试单元,利用扫描单元的兼容性,并考虑布局信息,将其分配到不同的扫描链中共享测试输入向量,多扫描链的划分应用图论方法.在ISCAS89平台上的实验结果表明,有效降低了峰值测试功耗和平均测试功耗.     

全扫描设计中多扫描链的构造

本文在交迭测试体系 的基础上提出了一种多扫描链的区间构造法,对于确定的测试向量集能够显著地减少测试应用时间.该构造方法根据规定的扫描链数,通过求解线性规划问题的方法确定扫描寄存器在扫描链上的优化的分布区间,从而构造多扫描链,最后根据对多扫描链进行连线复杂度的定性分析,求得连线复杂度最低的多扫描链的最优构造.     

基于探索式分区和测试向量生成的硬件木马检测方法

本文提出基于分区和最优测试向量生成的硬件木马检测方法.首先,采用基于扫描细胞分布的分区算法将电路划分为多个区域.然后,提出测试向量重组算法,对各区域依据其自身结构生成近似最优的测试向量.最后,进行分区激活和功耗分析以检测木马,并采用信号校正技术消减制造变异和噪声的影响.优点是成倍提高了检测精度,克服了制造变异的影响,解决了面对大电路的扩展性问题,并可以定位木马.在基准电路上的验证实验表明检测性能有较大的提升.     

动态向量调整的多扫描链测试数据压缩

 由于多扫描链测试方案能够提高测试进度,更适合大规模集成电路的测试,因此提出了一种应用于多扫描链的测试数据压缩方案.该方案引入循环移位处理模式,动态调整向量,能够保留向量中无关位,增加向量的外延,从而提高向量间的相容性和反向相容性;同时,该方案还能够采用一种有效的参考向量更替技术,进一步提高向量间的相关性,减少编码位数.另外,该方案能够利用已有的移位寄存器,减少不必要的硬件开销.实验结果表明所提方案在保持多扫描链测试优势的前提下能够进一步提高测试数据压缩率,满足确定性测试和混合内建自测试.     

基于扫描的VLSI全速测试方法

当工艺进入到超深亚微米以下,传统的故障模型不再适用,必须对电路传输延迟引发的故障采用延迟故障模型进行全速测试.给出了常用的延迟故障模型,介绍了一种基于扫描的全速测试方法,并给出了全速测试中片上时钟控制器的电路实现方案.对芯片进行测试,可以直接利用片内锁相环电路输出的高速时钟对电路施加激励和捕获响应,而测试向量的扫描输入和响应扫描输出则可以采用测试机提供的低速时钟,从而降低了全速测试对测试机时钟频率的要求.最后,对于全速测试方案提出了若干建议.     

单链扫描可测性设计中存储元件的排序

本文提出了扫描设计中存储元件在扫描链中的最优排序方法。采用交迭测试体制和区间法能快速求出最优解。对于确定的测试向量集，用该方法构造的扫描链能使电路总的测试时间最少。     

一种新颖的全方位多扫描设计的测试压缩方法

提出了一种基于展开宽度可调的解压缩技术和X-压缩的多扫描电路的测试压缩方法。采用可变宽度的扫描链解压缩方法，对测试输入进行解压缩，且对于测试响应，结合了X-压缩的优点，测试响应整合器最小化故障被屏蔽的概率，扫描链的结构采取广播扫描模式。在此基础上对其改进，使其可同时处理取值相反的触发器。两种工作模式（串行模式和并行模式）可进一步处理剩余的紧凑的触发器值。提出的测试压缩算法的优点是：可节省测试设备的存储需求，减少测试输入输出引脚数和测试通道数，降低测试应用时间，从而全面提高测试激励数据和测试响应数据的压缩率。实验结果证明了该算法与以往算法相比较的优势。     

基于边界扫描技术的Flash测试技术研究

提出了一种片内存储器的可测性设计方法.在详细分析了边界扫描技术的结构,功能与控制原理的基础上:设计了一种存储器测试接口.该接口符合JTAG标准(IEEE 1149.1标准),其中包含了标准的指令寄存器设计,用来控制访问不同的扫描链.在权衡了测试效率和芯片面积的基础上,提出了一种在线测试器电路的设计方法.实验表明,该测试电路可以以小的面积开销而节省大量测试时间.     

边界扫描测试的自适应完备诊断算法的优化

IEEE1149.1边界扫描机制是一种新型的VLSI电路测试及可测性设计方法,在边界扫描测试过程中生成合理的测试向量集是有效应用边界扫描机制对电路系统进行测试的关键。在分析传统边界扫描测试生成算法和W步、C步自适应测试生成算法的基础上,提出了一种改近的自适应测试生成算法。实验表明该算法具有完备的诊断能力和紧凑性指标较低的优点,是一种性能优良的完备测试生成算法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.