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报告了一个两级 C-波段功率单片电路的设计、制作和性能 ,该单片电路包括完全的输入端和级间匹配 ,输出端的匹配在芯片外实现 ,该放大器在 5.2~ 5.8GHz带内连续波工作 ,输出功率大于 36.6d Bm,功率增益大于 18.6d B,功率附加效率 34 % ,4芯片合成的功率放大器在 4 .7~ 5.3GHz带内 ,输出功率大于 4 2 .8d Bm( 19.0 W) ,功率增益大于 18.8d B,典型的功率附加效率为 34 %。 相似文献
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Dong Min Kang Ju Yeon Hong Jae Yeob Shim Jin‐Hee Lee Hyung‐Sup Yoon Kyung Ho Lee 《ETRI Journal》2005,27(2):133-139
A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band. 相似文献
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实现了一个单片集成、直接转换结构的2.4GHz CMOS接收机.这个正交接收机作为低成本方案应用于802.11b无线局域网系统,所处理的数据传输率为该系统的最大速率--11Mbps.基于系统设计以及低噪声高线性度考虑,设计了低噪声放大器、直接转换混频器、增益可变放大器、低通滤波器、直流失调抵消电路及其他辅助电路.该芯片采用中芯国际0.18μm 1p6m RF CMOS工艺流片.所测的接收机性能如下:噪声系数为4.1dB,高增益设置下低噪声放大器与混频器的输入三阶交调点为-7.5dBm,整个接收机的输入三阶交调点为-14dBm,相邻信道干扰抑制能力在距中心频率30MHz处达到53dBc,输出直流失调电压小于5mV.该接收机采用1.8V电源电压,I,Q两路消耗的总电流为44mA. 相似文献
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We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 μm GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz. 相似文献
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Chen-Kuo Chu Hou-Kuei Huang Hong-Zhi Liu Chiu R.-J. Che-Hung Lin Chih-Cheng Wang Mau-Phon Houng Yeong-Her Wang Chuan-Chien Hsu Wang Wu Chang-Luen Wu Chian-Sern Chang 《Microwave and Wireless Components Letters, IEEE》2005,15(10):667-669
A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50/spl Omega/ input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4dB small-signal gain and 34dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5GHz is also achieved. 相似文献
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A 0.25-/spl mu/m 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer 总被引:1,自引:0,他引:1
A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-/spl mu/m 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as a diode linearizer. It is believed that this is the first reported use of the diode linearization technique in CMOS PA design. It shows effective improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28%. The obtained PA performances demonstrate the standard CMOS process potential for medium power RF amplification at 2.4 GHz wireless communication band. 相似文献
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《Microwave and Wireless Components Letters, IEEE》2009,19(6):410-412
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Van-Hoang Do Subramanian V. Keusgen W. Boeck G. 《Microwave and Wireless Components Letters, IEEE》2008,18(3):209-211
A monolithic power amplifier (PA) operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 SiGe-heterojunction bipolar transistor (HBT) technology, featuring npn transistors with and . A two-stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a small signal gain of 18.8 dB and an output power of 14.5 dBm under 1 dB gain compression at 61 GHz. At this frequency, the saturated output power is 15.5 dBm and the peak power added efficiency (PAE) is 19.7%. To our knowledge, this is the highest PAE reported so far for a monolithic 61 GHz PA in SiGe-HBT technology. 相似文献
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研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。 相似文献
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Hsin-Hsing Liao Hao Jiang Shanjani P. King J. Behzad A. 《Solid-State Circuits, IEEE Journal of》2009,44(5):1361-1371
A fully monolithic 2 times 2(2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the required performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via (TWV) process on Si wafer was developed and utilized for this 2 times 2 PA. From fabricated 2 times 2 chip measurement results, both 5 GHz-band and 2.4 GHz-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm with >14% efficiency for 5 GHz-band and 19% efficiency for 2.4 GHz-band at -25 dB EVM linear output. 相似文献
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介绍了一种采用0.15μm GaAs PHEMT工艺设计加工的2~20 GHz宽带单片放大器,为了提高电路的整体增益和带宽,在设计电路时采用两级级联分布式结构。此种电路结构不仅能够增加整体电路的增益和带宽,还可以提高电路的反向隔离,获得更低的噪声系数。利用Agilent ADS仿真设计软件对整体电路的原理图和版图进行仿真优化设计。后期电路在中国电子科技集团公司第十三研究所砷化镓工艺线上加工完成。电路性能指标:在2~20 GHz工作频率范围内,小信号增益>13.5 dB;输入输出回波损耗<-9 dB;噪声系数<4.0 dB;P-1>13 dBm。放大器的工作电压5 V,功耗400 mW,芯片面积为3.00 mm×1.6 mm。 相似文献
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Zhenqiang Ma Mohammadi S. Liang-Hung Lu Bhattacharya P. Katehi L.P.B. Alterovitz S.A. Ponchak G.E. 《Microwave and Wireless Components Letters, IEEE》2001,11(7):287-289
We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power Psat of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs 相似文献
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提出了一种应用于无线内窥镜系统的2.4GHz低功耗ASK发射机.为了获得高的数据传输速率,采用了基于混频器的直接上变换发射机结构.为了节省功耗,提出了一种基于电流复用技术的伪差分堆栈结构的A类功放.低功耗发射机由两部分组成:基于恒幅度锁相环(PLL)的20MHz的ASK基带调制器和直接上变换的射频电路.该设计已经采用TSMC 0.25μm CMOS工艺实现并进行了验证.测试结果表明,发射数据速率为1Mbps时,发射机的输出功率为-23.217dBm.采用单2.5V的电源供电下,低功耗发射机消耗的电流约为3.17mA. 相似文献
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针对高质量无线局域网的传输需求,设计了一款工作在5~6 GHz的宽带磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器芯片。针对HBT晶体管自热效应产生的非线性和电流不稳定现象,采用自适应线性化偏置技术,有效地解决了上述问题。针对射频系统的功耗问题,设计了改进的射频功率检测电路,以实现射频系统的自动增益控制,降低功耗。通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术实现该功率放大器芯片。仿真结果表明,功放芯片的小信号增益达到32 dB;1 dB压缩点功率为28.5 dBm@5.5 GHz,功率附加效率PAE超过32%@5.5 GHz;输出功率为20 dBm时,IMD3低于-32 dBc。 相似文献
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Lan X. Wojtowicz M. Truong M. Fong F. Kintis M. Heying B. Smorchkova I. Chen Y.C. 《Microwave and Wireless Components Letters, IEEE》2008,18(6):407-409
A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output power of +11 dBm at 53 GHz with an estimated phase noise of -97 dBc/Hz at 1 MHz offset based on on-wafer measurement. To the best of our knowledge, this is the highest frequency VCO ever reported for GaN technology with a high output power at V-band, without using any buffer amplifier. This work demonstrates the potential of applying GaN technology to millimeter wave band, high power, and low phase noise frequency sources applications. 相似文献
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Based on a coaxial waveguide power-dividing/combining circuit, a four-device solid-state power amplifier with excellent power combining efficiency is presented. The fabricated power amplifier combining four monolithic microwave integrated circuit power amplifiers shows a 13-16.65 dB small-signal gain over a wide bandwidth of 7-13.5 GHz. The measured maximum output power at 1 dB compression is 25.4 dBm at 11 GHz, with a power-combining efficiency of 91%. 相似文献