A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of Communications Technology and Electronics - Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal...     

Large-Format Voltage-Tunable Dual-Color Midwavelength Infrared Quantum-Well Infrared Photodetector Focal Plane Array

We report a large-format (640 times 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mum) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mum (color 1) to 4.7 mum (color 2) as the bias is increased within the limit applicable by commercial read-out integrated circuits. The operability of the FPA is ~99.5% with noise equivalent temperature differences of ~60 and 30 mK (f/1.5) in color modes 1 and 2, respectively. To our knowledge, this is the first large-format voltage-tunable dual-color QWIP FPA reported for midwavelength thermal imaging.     

128×128GaAs量子阱红外焦平面探测器阵列铟柱制备

对量子阱红外探测器研制中通常采用的铟膜制备和铟柱生长技术进行了研究。从铟源的选择及蒸发的方法、距离、真空度的控制等方面做了大量实验,优化出了最佳工艺条件。铟源的纯度99.99%,电子束蒸发厚金属膜,旋转行星夹具,蒸发距离39cm,1.33×10-Pa真空下启动蒸5发程序和关闭高阀,辅以适当的剥离方法,最终在光敏芯片和读出电路上分别制备出符合设计要求的20μm×20μm×7μm(长×宽×高)铟柱。该工艺方法适用于任何厚金属膜的制备。     

Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures

Journal of Communications Technology and Electronics - The results of the development and testing of a short-wave IR (0.9–1.7 μm) camera with the first Russian-produced 320 × 256...     

Large-Format Voltage-Tunable Dual-Band Quantum-Well Infrared Photodetector Focal Plane Array for Third-Generation Thermal Imagers

We report a large-format (640 times 512) voltage- tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mum as the bias is increased within the limit applicable by commercial read-out integrated circuits. The FPA with MWIR and LWIR cutoff wavelengths of 5.1 and 8.9 mum provides noise equivalent temperature differences of 20 and 32 mK (f/1.5) in these bands, respectively. The results are very encouraging for the development of low-cost large-format dual-band MWIR/LWIR FPA technology.     

Photonic-Crystal-Slab-Type Guided Mode Resonance Filters in Infrared Range

Transmission characteristics of photonic crystal (PhC)-slab-type guided mode resonance (GMR) filters in the infrared range (4–10 $mu$m) are studied numerically and experimentally. Using a finite-difference time-domain method, the dependencies of the spectral response with the depth and size of holes are investigated and analyzed. The GMR filters were fabricated on a silicon-on-insulator wafer and the experimental transmission spectra were compared with the simulations. In this context, we identified a list of conditions for the realization of PhC-slab-type GMR filters in the infrared range.      

Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range

Journal of Communications Technology and Electronics - A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of...     

基于面阵靶板的光电探测单元性能标定研究

目前,在强激光远场光斑的检测中,越来越多的采用面阵探测器的测量方法．随着测试精度的不断提高,探测器的数目也逐渐增加,靶板上各探测单元间的均匀性成为影响测试精度的一个重要因素．与目前复杂庞大的标定设备相比,设计了一种简单实用的探测器性能标定系统,完成了探测器的选型,实现了模块化测量,适应了大批量探测器的快速筛选与性能标定的测试要求．     

量子点红外光子探测器的研究进展

迄今为止关于量子点红外光子探测器（QDIP）的研究已有众多文献发表,涉及量子点生长、系统设训、建模、表征与测量等各方面,对近年来国外文献报道的QDIP技术的进展进行了总结和综述,简要描述了QDIP研发的方法和思路,给出了近期国外研制的一些QDIP的性能,介绍了今后实现高性能QDIP的若干发展方向,尽管QDIP已成功地用于单元探测器和焦平面器件,但作为一种新兴技术,QDIP仍不成熟,短期内直接替代HgCdTe似乎还不可能．     

一种红外焦平面读出电路数字模块的设计

介绍了一种红外焦平面读出电路数字模块的设计与实现。该模块可以提供系统正常工作所需的时序,包括行选列选、采样保持等。此外,该模块还可以进行输出模式的切换,实现多路输出,提高输出帧频。介绍了多路输出的Verilog算法、电路的整体结构和时序,并给出了整个系统的仿真结果。设计的模块采用华润上华CSMC 0.5μm DPTM单阱CMOS工艺流片成功,验证了设计的正确性。测试结果表明,对64×64的阵列,四路输出时,输出帧频可以达到240fps,可应用于车辆夜视领域。     

Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs

The impulse response time has been measured as a function of reverse bias, gain, and temperature in backside-illuminated short-wave infrared HgCdTe avalanche photodiodes (APDs) with variable junction geometry. The APD geometry was altered using HgCdTe substrates of variable thickness and by variation of device fabrication parameters. This approach allowed study of the drift–diffusion dynamics of the electrons before entering the junction and the electron and hole dynamics during the junction transition in APDs with different carrier collection distances and junction widths. The response time was typically limited by a double exponential decay, which is attributed to contributions from the impedance mismatch between the interconnection circuit and the 50-Ω radiofrequency probe, and a delayed diffusion response from carriers generated far from the junction. These contributions limited the maximum bandwidth of the diodes to about 600 MHz, independently of gain and temperature. The hot carrier velocities are estimated by fitting the measured response with numerical calculations, taking into account contributions from a direct drift–multiplication response and a delayed diffusion response. This analysis shows that the hot carrier dynamics is close to independent of temperature and that the electron drift velocity saturates at the gain onset to a value of 1 × 10⁷ cm/s, decreasing upon a further increase of the electric field E to a value of about 3 × 10⁶ cm/s at E = 100 kV/cm. The hole velocity shows a slow variation from 3 × 10⁶ cm/s at low electric fields to 1.5 × 10⁶ cm/s at high electric fields.     

非合作目标脉冲相位式激光测距仪的测程研究

对于非合作目标的中程距离测量, 从测距范围、测量精度、速度和可靠性的折衷方面来讲, 脉冲相位式激光测距法优于常规的脉冲法测距和连续波相位法测距。在脉冲相位式激光测距中提出采用连续发射的正弦调制脉冲信号提高发射激光的峰值功率以提高测程, 但发射激光的平均功率被保持很低保证了发射激光对人眼的安全。同时根据硅雪崩光电二极管(Si-APD)噪声谱密度理论, 设计了具有温度补偿和反馈电阻噪声补偿的激光测距仪前放接收模块, 详细分析了背景光, 反向高压和反馈电阻对于Si-APD接收性能的影响。实验表明：根据该方法设计的前放接收模块使测距仪接收系统获得最大信噪比, APD工作在最佳倍增状态,从而提高测距仪的探测灵敏度和最大测程。     

GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究

结合薛定谔方程和泊松方程,模拟计算得到GaAs/AlGaAs多量子阱红外探测器外延材料能带图,并对该材料进行光致荧光谱(PL)测量.结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,采用传输矩阵法得到价带与导带基态能量,并由此推算出相应的红外探测响应波长.以傅里叶变换红外光谱仪对GaAs/AlGaAs多量子阱红外探测器器件进行光谱测量,测量结果表明,所采用的计算方法得出的理论结果与器件的光电流谱吻合较好,利用光荧光谱对外延材料进行测量,可以在器件工艺前,快速确定器件的探测波长,从而更加有效地开展器件的研究.     

网格敏感区硅光探测器

研究了网格结构硅光敏二极管，在这种结构中，网格条区为ＰＮ结区，网格孔区为高电阻率衬底材料区。在反向工作电压作用下，网孔区将被耗尽，成为ＰＮ结与表面耗尽区结构统一的光探测器。测量表明，这种结构的器件是一种高响应度、宽光谱范围的光探测器件。     

Demonstration and Performance Assessment of Large Format InP–InGaAsP Quantum-Well Infrared Photodetector Focal Plane Array

There have been various studies showing that InP-InGaAs quantum-well infrared photodetectors (QWIPs) are potential alternatives to AlGaAs-GaAs QWIPs in the long wavelength infrared (LWIR) band, especially for applications requiring high responsivity. Being on InP substrate, this material system also offers lattice matched mid-wavelength infrared (MWIR)/LWIR dual band QWIP stack when it is used with the AlInAs-InGaAs system. It is desirable to extend the cut-off wavelength of InP based LWIR QWIPs to , which can be accomplished by replacing the QW material with InGaAsP. In this paper, we report the first InP-InGaAsP QWIP focal plane array (FPA). The 640 512 FPA displayed remarkably low noise equivalent temperature difference (NETD) with very short integration times (46 mK at 66 K with and f/1.5 optics). The results show that these QWIPs can be operated with high responsivity (1 A/W) while offering bias adjustable gain in a wide range where the detectivity is almost constant at a reasonably high level.     

Analysis of the Photodetector Array Spectrum Using the Influence Function

The conversion of an optical image to a carrier flow in the semiconductor substrate of a photodetector array is accomplished using the Green function method. Asymptotic solutions for large and small arguments are analyzed. Among them are intermediate asymptotic self-similar solutions that are suitable for the transition to the spectral range.     

双色量子阱红外探测器中的耦合光栅

在量子阱红外探测器(QWIP)上制备光栅的目的是对垂直入射的红外辐射进行有效耦合。从实验、测试和有关文献出发,探讨了影响其耦合效率的参数及参数的优化值。重点分析了双色QWIP的光栅设计问题,并从提高双色量子阱红外探测器光栅耦合效率和响应均匀性出发,介绍了一种新型交叉组合二维双周期结构光栅的设计方法;以一种具体AlGaAs/GaAs双色量子阱红外探测器为例,模拟了对应的交叉组合二维双周期结构光栅的几何参数和耦合强度,并与传统的二维双周期光栅结果对比,显示了新型双周期结构光栅在提高光耦合强度方面的优越性。     

Study of Over Range Cylindrical Phased Antenna Array

Journal of Communications Technology and Electronics - Abstract—Theoretical and experimental studies of the fragment of the cylindrical antenna array containing eight linear arrays of eight...     

光电探测器组件辐照后性能退化的噪声表征

本文用爆裂噪声表征总剂量电离辐射(TID)对光电探测器组件的损伤情况。通过对辐照前后的光电探测器组件进行噪声测试,然后对比分析其结果。实验结果表明,总剂量辐照后,相对于辐照前,光电探测器组件内部明显出现了爆裂噪声,即组件内部出现了大量缺陷,导致组件的可靠性降低。