A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of Communications Technology and Electronics - Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal...     

一种新型自封焊小型化光电探测模块

提出了一种基于LTCC陶瓷基板的自封焊小型化光电探测模块,通过LTCC内埋电阻发热快速实现器件的密封。该模块不仅可以支持内部集成多种功能的光电芯片,还可与外部单元实现平面化、表贴式贴装,大幅提升模块安装适配性与可靠性。通过测试,模块在18GHz频率范围内具有高响应度与高平坦度,在体积上相较分立器件缩小了一个数量级,同时模块成本预计可降低一半以上,在机载、星载、弹载等平台的宽带相控阵系统中具有广阔的应用前景。     

Large-Format Voltage-Tunable Dual-Color Midwavelength Infrared Quantum-Well Infrared Photodetector Focal Plane Array

We report a large-format (640 times 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mum) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mum (color 1) to 4.7 mum (color 2) as the bias is increased within the limit applicable by commercial read-out integrated circuits. The operability of the FPA is ~99.5% with noise equivalent temperature differences of ~60 and 30 mK (f/1.5) in color modes 1 and 2, respectively. To our knowledge, this is the first large-format voltage-tunable dual-color QWIP FPA reported for midwavelength thermal imaging.     

128×128GaAs量子阱红外焦平面探测器阵列铟柱制备

对量子阱红外探测器研制中通常采用的铟膜制备和铟柱生长技术进行了研究。从铟源的选择及蒸发的方法、距离、真空度的控制等方面做了大量实验,优化出了最佳工艺条件。铟源的纯度99.99%,电子束蒸发厚金属膜,旋转行星夹具,蒸发距离39cm,1.33×10-Pa真空下启动蒸5发程序和关闭高阀,辅以适当的剥离方法,最终在光敏芯片和读出电路上分别制备出符合设计要求的20μm×20μm×7μm(长×宽×高)铟柱。该工艺方法适用于任何厚金属膜的制备。     

长波量子阱红外探测器材料技术研究

针对红外探测应用开展了长波GaAs/AlGaAs量子阱材料技术研究。系统地介绍了量子阱红外探测器材料的材料设计、生长和表征。基于一维薛定谔方程的求解获得量子阱材料的能带结构,进行量子阱材料的设计。采用分子束外延技术进行量子阱材料的生长研究。对量子阱材料的室温光荧光谱和高分辨率X射线衍射测试结果表现出材料高度晶格完整性以及平整界面。基于布鲁斯特角配置的傅立叶红外光谱测试获得了量子阱材料子带间跃迁吸收产生的红外吸收谱。采用该材料制备出高性能的量子阱红外焦平面探测器。     

Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures

Journal of Communications Technology and Electronics - The results of the development and testing of a short-wave IR (0.9–1.7 μm) camera with the first Russian-produced 320 × 256...     

Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range

Journal of Communications Technology and Electronics - A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of...     

甚长波量子阱红外探测器光耦合性能

从实验、测试和计算结果出发,运用有限时域差分法(FDTD)和传统的模式扩展(MEM)理论,研究甚长波量子阱红外探测器(QWIP)几种衍射光耦合的表面近场效应和光耦合效率,重点考察QWIP 45°面边耦合、光栅耦合QWIP结构、光栅尺寸、工艺条件的变化对QWIP相关性能的影响.实验与计算结果证明,合理地设计二维光栅,进行甚长波QWIP光耦合,可以获得有效的光耦合效果.     

甚长波量子阱红外探测器光耦合性能

从实验、测试和计算结果出发,运用有限时域差分法(FDTD)和传统的模式扩展(MEM)理论,研究甚长波量子阱红外探测器(QWIP)几种衍射光耦合的表面近场效应和光耦合效率,重点考察QWIP 45°面边耦合、光栅耦合QWIP结构、光栅尺寸、工艺条件的变化对QWIP相关性能的影响.实验与计算结果证明,合理地设计二维光栅,进行甚长波QWIP光耦合,可以获得有效的光耦合效果.     

Photonic-Crystal-Slab-Type Guided Mode Resonance Filters in Infrared Range

Transmission characteristics of photonic crystal (PhC)-slab-type guided mode resonance (GMR) filters in the infrared range (4–10 $mu$m) are studied numerically and experimentally. Using a finite-difference time-domain method, the dependencies of the spectral response with the depth and size of holes are investigated and analyzed. The GMR filters were fabricated on a silicon-on-insulator wafer and the experimental transmission spectra were compared with the simulations. In this context, we identified a list of conditions for the realization of PhC-slab-type GMR filters in the infrared range.      

Large-Format Voltage-Tunable Dual-Band Quantum-Well Infrared Photodetector Focal Plane Array for Third-Generation Thermal Imagers

We report a large-format (640 times 512) voltage- tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mum as the bias is increased within the limit applicable by commercial read-out integrated circuits. The FPA with MWIR and LWIR cutoff wavelengths of 5.1 and 8.9 mum provides noise equivalent temperature differences of 20 and 32 mK (f/1.5) in these bands, respectively. The results are very encouraging for the development of low-cost large-format dual-band MWIR/LWIR FPA technology.     

Large Format AlInAs–InGaAs Quantum-Well Infrared Photodetector Focal Plane Array For Midwavelength Infrared Thermal Imaging

We report the first large format (640times512) AlInAs-InGaAs quantum-well infrared photodetector (QWIP) focal plane array (FPA), and investigate the characteristics of AlInAs-InGaAs QWIPs both at pixel and FPA level. The measurements on the detectors fabricated with molecular beam epitaxy grown epilayer structure including 30 InGaAs quantum wells (26 Aring thick, N_D=2times10¹⁸ cm^-3) yielded very promising characteristics. The detectors with lambda_p=4.2 mum and Deltalambda/lambda_p=25% displayed a background-limited performance temperature as high as 105 K with f/2 aperture. The noise equivalent temperature difference of the FPA is as low as 23 mK (f/1.5) at 105-K sensor temperature with 99.6% operability. These results are comparable to the best results reported for AlGaAs-InGaAs midwavelength infrared QWIPs showing the promise of this material system for completely lattice-matched multiband QWIP FPAs.     

基于面阵靶板的光电探测单元性能标定研究

目前,在强激光远场光斑的检测中,越来越多的采用面阵探测器的测量方法．随着测试精度的不断提高,探测器的数目也逐渐增加,靶板上各探测单元间的均匀性成为影响测试精度的一个重要因素．与目前复杂庞大的标定设备相比,设计了一种简单实用的探测器性能标定系统,完成了探测器的选型,实现了模块化测量,适应了大批量探测器的快速筛选与性能标定的测试要求．     

一种红外焦平面读出电路数字模块的设计

介绍了一种红外焦平面读出电路数字模块的设计与实现。该模块可以提供系统正常工作所需的时序,包括行选列选、采样保持等。此外,该模块还可以进行输出模式的切换,实现多路输出,提高输出帧频。介绍了多路输出的Verilog算法、电路的整体结构和时序,并给出了整个系统的仿真结果。设计的模块采用华润上华CSMC 0.5μm DPTM单阱CMOS工艺流片成功,验证了设计的正确性。测试结果表明,对64×64的阵列,四路输出时,输出帧频可以达到240fps,可应用于车辆夜视领域。     

非合作目标脉冲相位式激光测距仪的测程研究

对于非合作目标的中程距离测量, 从测距范围、测量精度、速度和可靠性的折衷方面来讲, 脉冲相位式激光测距法优于常规的脉冲法测距和连续波相位法测距。在脉冲相位式激光测距中提出采用连续发射的正弦调制脉冲信号提高发射激光的峰值功率以提高测程, 但发射激光的平均功率被保持很低保证了发射激光对人眼的安全。同时根据硅雪崩光电二极管(Si-APD)噪声谱密度理论, 设计了具有温度补偿和反馈电阻噪声补偿的激光测距仪前放接收模块, 详细分析了背景光, 反向高压和反馈电阻对于Si-APD接收性能的影响。实验表明：根据该方法设计的前放接收模块使测距仪接收系统获得最大信噪比, APD工作在最佳倍增状态,从而提高测距仪的探测灵敏度和最大测程。     

Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs

The impulse response time has been measured as a function of reverse bias, gain, and temperature in backside-illuminated short-wave infrared HgCdTe avalanche photodiodes (APDs) with variable junction geometry. The APD geometry was altered using HgCdTe substrates of variable thickness and by variation of device fabrication parameters. This approach allowed study of the drift–diffusion dynamics of the electrons before entering the junction and the electron and hole dynamics during the junction transition in APDs with different carrier collection distances and junction widths. The response time was typically limited by a double exponential decay, which is attributed to contributions from the impedance mismatch between the interconnection circuit and the 50-Ω radiofrequency probe, and a delayed diffusion response from carriers generated far from the junction. These contributions limited the maximum bandwidth of the diodes to about 600 MHz, independently of gain and temperature. The hot carrier velocities are estimated by fitting the measured response with numerical calculations, taking into account contributions from a direct drift–multiplication response and a delayed diffusion response. This analysis shows that the hot carrier dynamics is close to independent of temperature and that the electron drift velocity saturates at the gain onset to a value of 1 × 10⁷ cm/s, decreasing upon a further increase of the electric field E to a value of about 3 × 10⁶ cm/s at E = 100 kV/cm. The hole velocity shows a slow variation from 3 × 10⁶ cm/s at low electric fields to 1.5 × 10⁶ cm/s at high electric fields.     

量子点红外光子探测器的研究进展

迄今为止关于量子点红外光子探测器（QDIP）的研究已有众多文献发表,涉及量子点生长、系统设训、建模、表征与测量等各方面,对近年来国外文献报道的QDIP技术的进展进行了总结和综述,简要描述了QDIP研发的方法和思路,给出了近期国外研制的一些QDIP的性能,介绍了今后实现高性能QDIP的若干发展方向,尽管QDIP已成功地用于单元探测器和焦平面器件,但作为一种新兴技术,QDIP仍不成熟,短期内直接替代HgCdTe似乎还不可能．     

共振腔增强GaInAsSb光电探测器设计及数值模拟

设计了一种从衬底入射的共振腔增强型GaInAsSb/GaSb光电探测器结构.在这种结构中,上反射镜是由9.5～15.5个周期的InAs/GaSb QWS组成,下反射镜由3个周期的SiO2/Si QWS组成.器件上表面镀有一层高透射率的抗反射层.计算表明,在设计的工作波长2.4μm,器件可以获得大约(91～88)%的量子效率.在2～2.9 μm波长范围器件的量子效率有两个峰,这使得器件可以作为双色探测器来工作.     

128×160元GaAs/AlGaAs多量子阱长波红外焦平面阵列

研制了128×160元GaAs/AlGaAs多量子阱红外焦平面阵列，它是目前国内报道的最大像元数的量子阱红外焦平面阵列. 77K时，器件的平均黑体响应率Rv＝2.81e7V/W,平均峰值探测率Dλ=1.28e10cm·W-1·Hz1/2，峰值波长λp=8.1μm，器件的盲元率为1.22%.