N+注入硅中氮-空位复合体的红外光谱

利用离子注入以100和180keV的能量和5×1015cm-2的剂量向单晶硅片双面注入氮杂质,然后进行不同温度的快速热处理(RTP).利用傅里叶红外(FTIR)光谱研究不同温度RTP处理后的注氮硅中氮杂质的行为.研究发现,经过750～900℃的RTP处理50s后,样品的FTIR图谱中出现四个新的红外吸收峰,并随温度升高先增强后减弱,这些红外吸收峰被认为与氮-空位复合体有关.通过构建原子结构模型并进行理论模拟计算分析,表明在新出现的红外吸收峰中有两个与双氮-双空位(N2V2)结构相关的红外吸收峰.     

空位对普通和掺氮直拉硅单晶中氧沉淀形核的作用

研究了普通直拉(CZ)硅单晶和掺氮直拉(NCZ)硅单晶在氩气氛下进行1250℃/50s的快速热处理(RTP)后,再经600～1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为.研究表明,由RTP引入的空位在700～800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800～900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800以上,氮促进氧沉淀形核的作用比空位更强.此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.     

硅单晶中氮－氧复合体的红外吸收研究

对不同条件下含氮和不含氮的硅单晶，在３００Ｋ和８Ｋ下进行红外吸收研究．实验结果表明：含氮硅单晶和氮一氧复合体相关的红外吸收峰为１０３０ｃｍ－１，１０００ｃｍ－１和８０６ｃｍ－１．     

空位对普通和掺氮直拉硅单晶中氧沉淀形核的作用

研究了普通直拉（CZ）硅单晶和掺氮直拉(NCZ)硅单晶在氩气氛下进行1250℃/50s的快速热处理（RTP）后,再经600~1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为. 研究表明,由RTP引入的空位在700~800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800~900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800℃以上,氮促进氧沉淀形核的作用比空位更强. 此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.     

p型微氮直拉硅中氧施主的电学特性

研究了p型含氮以及不含氮直拉(CZ)硅中热施主(TD)以及氮氧(N-O)复合体的电学性质.硅片在350～850℃范围进行不同时间的退火后,利用四探针和通过室温傅里叶红外光谱(FTIR)分别测量其载流子浓度和间隙氧浓度的变化.实验结果表明:p型含氮直拉硅(NCZ)中热施主的电学特性基本与n型NCZ硅相同,但N-O复合体的消除温度明显低于n型NCZ硅,这是由于p型NCZ硅中硼促进了N-O复合体的消除.     

p型微氮直拉硅中氧施主的电学特性

研究了p型含氮以及不含氮直拉(CZ)硅中热施主(TD)以及氮氧(N-O)复合体的电学性质.硅片在350～850℃范围进行不同时间的退火后,利用四探针和通过室温傅里叶红外光谱(FTIR)分别测量其载流子浓度和间隙氧浓度的变化.实验结果表明:p型含氮直拉硅(NCZ)中热施主的电学特性基本与n型NCZ硅相同,但N-O复合体的消除温度明显低于n型NCZ硅,这是由于p型NCZ硅中硼促进了N-O复合体的消除.     

稀土（Er）与氧（O）共掺GaAs（Er,O）的红外吸收谱研究

用傅里叶变换红外吸收谱和透射谱（ＦＴＩＲ），在７７Ｋ和３００Ｋ温度下测量研究用双离子注入法配合优化热退火处理制成的ＧａＡｓＥｒ，Ｏ发光材料的光吸收特性及杂质缺陷行为，观测到该材料中存在３种吸收峰并作了指认，分析了这些吸收峰与材料的离子注入及退火的关系，给出杂质和缺陷对材料ＧａＡｓ（Ｅｒ，Ｏ）高效发光的可能影响     

硅中氧的FTIR研究

对不同氧含量的硅片在300K到4.2K温度范围进行红外吸收测量表明:低温(80～4.2K)下硅的红外吸收谱中1127cm~(-1)处的吸收是硅中氧的吸收峰.     

晶体硅中氢钝化硼的机理

利用量子化学近似计算方法MNDO和红外光谱法研究了晶体硅中氢和硼的相互作用.结果表明,原子氢束缚在离代位硼原子约1.25A的球面能谷中,可绕硼转动,形成一个动态的硼-氢复合体,从而钝化硼.B-H对的动态性质导致对应的1875cm~(-1)红外吸收峰的宽化,这种状态可保持到10K.     

YBa_2Cu_3O_x和BiSrCaCu_2O_x红外吸收谱的研究

进一步研究了对YBa_2Cu_3O_x红外谱中P_1、P_2和P_3峰的指认,测量了YBa_2Cu_3O_x的晶格参数b、c和红外峰P_1、P_3的频率随淬火温度的变化,报道了P_4(410cm~(-1))及P_5(360cm~(-1))两个峰并分别指认为Ba-Ba层间及Y-Ba层间Cu-O弯曲振动产生的.还研究了不同氧含量BiSrCaGu_2O_x样品的红外吸收谱,并对其红外峰进行了指认.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.