共查询到20条相似文献,搜索用时 15 毫秒
1.
《Electron Device Letters, IEEE》1982,3(8):205-208
We report a selectively doped Ga0.47 In0.53 As/Al0.48 In0.52 As field effect transistor with a 1.2 µm gate length and present a model of two-region operation to analyze its I-V characteristics. This depletion mode transistor shows complete pinch-off and saturation characteristics with a low frequency transconductance of 70 mmho/ mm at 300 K and 125 mmho/mm at 77 K. The theoretical model, which includes the background carriers in the undoped Ga0.47 In0.52 As layer, agrees with the experimental results. 相似文献
2.
《Electron Device Letters, IEEE》1983,4(1):5-8
Selectively-doped depletion-mode FET's which show full pinch-off at 295 K with transconductance in excess of 90 mS/mm and contact resistance less than 0.4 Ω-mm have been fabricated. The device properties reported represent a significant improvement over previously published work on an equivalent structure, because of improvements in growth technique and modifications in the device structure. Analysis of our measurement at room temperature suggests that the two-dimensional electron gas at the hetero-interface is not the dominant contributor to the total device current. 相似文献
3.
《Electron Device Letters, IEEE》1982,3(6):152-155
We report the first demonstration of a depletion mode modulation doped Ga0.47 In0.53 As field effect transistor. This transistor combines the advantage of modulation doping and the superior material characteristics of Ga0.47 In0.53 As. DC transconductances of 31 mmho/ mm at 300 K and 69 mmho/mm at 77 K have been measured for a device with 5.2µm gate length and 340 µm gate width. An enhanced drift mobility is responsible for 88 percent of the improvement in the transconductance at 77 K and the remaining 12 percent is attributed to an improved ohmic contact. A high performance modulation doped Ga0.47 In0.53 As FET is expected to play an important role in very high speed digital and analog applications. 相似文献
4.
《Electron Device Letters, IEEE》1984,5(1):16-17
The operation of the first Al0.48 In0.52 As p-i-n avalanche photodiode is reported. The i layer has a background doping ≲1014/ cm3and the diodes have breakdown voltages in excess of -80 V. A strong enhancement of the photoresponse accompanied by avalanche gain at wavelengths near and beyond the band gap is observed, due to the Franz-Keldysh effect. At short wavelengths, an avalanche gain of 50 was measured. A detailed study of different etches to achieve optimum taper of the mesas was also made. 相似文献
5.
《Electron Device Letters, IEEE》1987,8(9):380-382
High-performance pseudomorphic Ga0.4 In0.6 As/ Al0.55 In0.45 As modulation-doped field-effect transistors (MODFET's) grown by MBE on InP have been fabricated and characterized. DC transconductances as high as 271, 227, and 197 mS/mm were obtained at 300K for 1.6-µm and 2.9-µm gate-length enhancement-mode and 2-µm depletion-mode devices, respectively. An average electron velocity as high as 2.36 × 107cm/s has been inferred for the 1.6-µm devices, which is higher than previously reported values for 1-µm gate-length Ga0.47 In0.53 As/Al0.48 In0.52 As MODFET's. The higher bandgap Al0.55 In0.45 As pseudomorphic barrier also offers the advantages of a larger conduction-band discontinuity and a higher Schottky barrier height. 相似文献
6.
《Electron Device Letters, IEEE》1981,2(3):73-74
It is demonstrated that inversion-mode n-channel insulated gate field-effect transistors can be made of p-type heteroepitaxially-grown Ga0.47 In0.53 As layers on semi-insulating InP. 相似文献
7.
《Electron Device Letters, IEEE》1982,3(10):318-319
The first reported growth of the quaternary AlGaInAs on an InP substrate by molecular beam epitaxy had an equal aluminum-to-gallium mole fraction ratio, and exhibited a 5 K bandgap energy of 1.237 eV. This is intermediate between the 5 K band gap energy of Ga0.47 In0.53 As (0.810 eV) and that of Al0.48 In0.52 As (1.56 eV). A Schottky diode and a MESFET were fabricated on this material. 相似文献
8.
《Electron Device Letters, IEEE》1986,7(12):683-685
In0.52 Al0.48 As/In0.53 Ga0.47 As/In0.52 Al0.48 As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed. 相似文献
9.
《Electron Device Letters, IEEE》1986,7(2):129-131
We report the first heterojunction bipolar transistor (HBT) with base doping level as high as 2 × 1020cm-3. The device is grown by molecular beam epitaxy (MBE) with growth conditions adjusted to keep perfect surface morphology and to avoid dopant diffusion even at ultra-high doping levels. Maximum dc current gain of 10 is observed, for a base thickness of 40 nm. This is a new step in the optimization of HBT's structures for high-speed logic and microwave applications. 相似文献
10.
《Electron Device Letters, IEEE》1980,1(8):154-155
Ga0.47 In0.53 As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47 In0.53 As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been overcome by using thin Al0.48 In0.52 As layers between gate metal and GaInAs active layers. Al0.48 In0.52 As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1in spite of nonoptimized dimensions. 相似文献
11.
A self aligned In0.52Al0.48As/In0.53 Ga0.47As double heterojunction bipolar transistor (HBT) with a graded heterointerface has been grown by molecular-beam epitaxy (MBE) and tested. The DC characteristics of HBT structures with a compositionally graded junction using a linear graded In0.53Ga0.47-xAlxAs between two ternary layers were investigated. Typical quaternary graded devices with an emitter dimension of 50×50 μm2 exhibited a current gain as high as 1260, as compared to 800 for abrupt devices, at a collector current density of 2.8×103 A/cm2 相似文献
12.
《Electron Device Letters, IEEE》1980,1(9):174-176
MESFETs with GA0.47 In0.53 As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al0.48 In0.52 As seperated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6µm long gates and gate-to-source separations of 0.8 um exhibited an average gm of 135 mS mm-1of gate width for Vds = 2V and Vg = 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer between the gate metal and the active layer. 相似文献
13.
《Electron Devices, IEEE Transactions on》1986,33(2):188-191
We demonstrate for the first time a long-wavelength Ga0.47 In0.53 As vertical photoconductive detector with very high gain, low noise, low-bias voltages, high sensitivity, and high-coupling efficiency. The detector consists of an n+ InP, a Fe-doped Ga0.47 In0.53 As, and an n+ Ga0.47 In0.53 As layer grown successively on a semi-insulating InP substrate. The highly resistive active layer sandwiched between two n+ layers creates a uniform electric field perpendicular to the surface, producing a dc gain of 86 at bias voltages as low as 0.5 V. The noise power at 100 MHz is about 11 dB lower than that of a coplanar interdigitated photoconductive detector prepared with undoped GaInAs grown by vapor-phase epitaxy. Preliminary measurements reveal a receiver sensitivity of -28.2 dBm at a bit-error rate of 10-9at 420 Mbit/s and a wavelength of 1.55 µm. 相似文献
14.
《Electron Device Letters, IEEE》1982,3(12):379-381
Lateral PNP transistors have been realized for the first time in the (In,Ga)As/(In,Al)As heterostructure material system. Be ion implantation has been used to form the emitter and collector junctions. A current gain of 3.8 is obtained up to 200 µA of collector current for devices with a 1.5 µm electrical base width. A hole diffusion length of 2 µm in the (In,Ga)As is estimated. 相似文献
15.
P-n-p In0.52Al0.48As/In0.53Ga0.47 As double-heterojunction bipolar transistors with a p+-InAs emitter cap layer grown by molecular-beam epitaxy have been realized and tested. A five-period 15-Å-thick In0.53Ga0.47As/InAs superlattice was incorporated between the In0.53Ga0.47As and InAs cap layer to smooth out the valence-band discontinuity. Specific contact resistance of 1×10-5 and 2×10-6 Ω-cm2 were measured for nonalloyed emitter and base contacts, respectively. A maximum common emitter current gain of 70 has been measured for a 1500-Å-thick base transistor at a collector current density of 1.2×103 A/cm2. Typical current gains of devices with 50×50-μm2 emitter areas were around 50 with ideality factors of 1.4 相似文献
16.
《Electron Device Letters, IEEE》1987,8(12):579-581
High-speed In0.53 Ga0.47 As/In0.52 Al0.48 As photodiodes have been grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates and fabricated. The measured impulse response characteristics are very close to the analytically calculated ones. The temporal response to pulsed optical excitation is characterized by a rise time of 21 ps and a width (FWHM) of 27 ps. The 25 × 20-µm2diodes have a junction capacitance <0.1 pF, a dark current ∼1 nA, and a peak responsivity of 0.35 A/W. These characteristics are comparable or better than most epitaxial InGaAs photodiodes reported to date and make the devices suitable for a host of high-speed applications and monolithic integration. 相似文献
17.
《Electron Device Letters, IEEE》1981,2(1):7-9
The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47 In0.53 As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter Of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased. 相似文献
18.
《Electron Device Letters, IEEE》1981,2(8):193-195
Resistivity increase was compared following various doses of different 100 kV ions implanted into Ga0.47 In0.53 As. The largest resistivity increase of n-type Ge doped GaInAs resulted from a boron ion implant, and increased to a total of 280 times the original resistivity after heating for 15 minutes at 200°C. Boron ion bombardment can be used to isolate devices in a planar GaInAs integrated circuit process. 相似文献
19.
Ga0.47 In0.53 As has been used to make fast (rt < 1 ns), photodiodes with low dark current (i_{D} < 10^{-8} A) and good quantum efficiency (ηQ ext > 50 percent over the entire1.0-1.7 mu m region of the optical spectrum). The physical properties related to the crystal growth and carrier transport are discussed in this paper in terms of both the design and the operating characteristics of detectors fabricated from this ternary alloy. The results of our work show that Ga0.47 In0.53 As is a material well-suited to several important semiconductor device applications. A comparison to other semiconductor photodiodes shows that Ga0.47 In0.53 As is one of the most sensitive detectors available in the1.0-1.7 mu m wavelength region. One can expect repeater-free transmission in excess of 150 km at 100 Mbits . s-1using these detectors in a digital optical fiber link at the 1.55 μm low-loss (alpha < 0.3 dB . km-1) low-dispersion transmission window. 相似文献
20.
《Electron Device Letters, IEEE》1987,8(4):171-173
We describe InP/In0.53 Ga0.47 As heterojunction phototransistors (HPT's) grown by chemical beam epitaxy (CBE). These devices exhibit high gain ( > 150) at signal levels as low as - 50 dBm. Compared to earlier devices of this type, the gain is relatively independent of the optical signal level. This is due primarily to the improved quality of the emitter-base heterojunction interface which, for these HPT's, is characterized by an ideality factor of 1.14. At an incident power level of -21 dBm the bandwidth is 14 MHz and the gain-bandwidth product is 4.8 GHz. 相似文献