共查询到15条相似文献,搜索用时 78 毫秒
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室温下采用VSM测定了离子束溅射(IBSD)技术制备的Co/Pt多层膜垂直方向的M-H回线。研究结果表明:Co/Pt多层膜中单位体积Co的饱和磁化强度MsCo小于块状Co的饱和磁化强度;Co/Pt多层膜的饱和磁化强度(Ms)与厚度有关:随Co层厚度tPt和多层膜总厚度tf的增加而增大,随Pt层厚度tpt的增加而减小;外推结果表明当tCo小于一个原子层厚(≈025nm)时,室温下Co/Pt多层膜的饱和磁化强度为零,呈顺磁性 相似文献
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Co/Pt多层膜的结构和饱和磁化强度 总被引:3,自引:3,他引:0
采用离子束溅射技术制备Co/Pt多层膜,用RBS、小角XRD和断面TEM研究了多层膜的周期性调制结构,用VSM研究了磁性层Co和顺磁性层Pt的厚度变化对饱和磁化强度的影响。结果表明,多层膜具有良好的周期性层状结构,和设计值一致。样品的饱和磁化强度(Ms)随Co层厚度增加而增大,随Pt层的厚度增大而减小。当Co层和Pt层的厚度比一定时,样品的饱和磁化强度不受周期数的影响,符合Ms=McotCo/D模 相似文献
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Co/Pt多层膜D射线小角衍射分析 总被引:1,自引:0,他引:1
对Co/Pt多层膜进行X射线小角衍射分析,测量出多层膜的周期厚度和解释多层膜小角衍射主峰之间出现次峰的现象,并确立次峰个数与膜周期数之间的关系。 相似文献
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Co/Ti非晶多层膜晶化过程中结构及磁性的变化 总被引:2,自引:0,他引:2
利用双对向靶溅射方法在室温下制备Co/Ti非晶多层膜,并采用原位退火透射电镜和原位热重法,观测了Co/Ti多层膜结构与磁性随温度的变化,结果表明:退火温度ta为400℃时,薄膜开始晶化,Co,Ti颗粒析出并粗化;ta>600℃时,具有铁磁性的Co单质完全消失,全部转化为Co2Ti相.热磁测量在390及520℃附近出现了两个明显的磁性转变峰,与薄膜结构变化对应.适当温度(400—520℃)的退火可获得高饱和磁化强度的Co-Ti颗粒膜. 相似文献
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采用洛仑兹电子显微镜研究了磁控溅射沉积制备的Cu(20 nm)/Co/Cu/Co纳米多层膜磁畴结构随铁磁层间耦合效应的变化. Cu中间层厚度较薄时, 由于铁磁层之间的耦合作用, 纳米多层膜为垂直易磁化, 磁畴为磁泡结构, 磁泡的平均直径随Cu中间层厚度的增加而减小, 多层膜矫顽力呈减小趋势. 当Cu中间层厚度大于3 nm时, 铁磁层之间的耦合作用减弱, 纳米多层膜为面内易磁化, 磁泡结构的磁畴消失, 全部为具有波纹状的接近180°畴壁的磁畴结构. 相似文献
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Co/Pt multilayers with perpendicular anisotropy were deposited using a dc magnetron sputtering system under high vacuum. Magnetization process was investigated by the measurement of magnetic components parallel and perpendicular to the applied field. A dependence of the coercivity of Co/Pt multilayers on the Co layer thickness was reported, in which the total thickness of Co layers kept constant. It is observed that the coercivity increases with the increment of Co layer thickness. For the samples with the same Co layer thickness while different total Co layer thickness, the coercivity first increases and then decreases with the increase of the total thickness of Co layers. This effect could be attributed to the competition between the reduction of HC related to incoherent reversal and the step-up of HC contributed by the magnetic polarization of Pt atoms at the interface of Co and Pt layers during magnetization reversal. The results show that the change of the coercivity is strongly related to the Co layer thickness, but not the total thickness of Co layers. The dependence of the coercivity on the angle between an applied field and the easy axis shows that the nucleation mode is dominant in magnetization reversal process of the samples. 相似文献
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纳米多层膜因具有优异的力学性能与抗摩擦磨损性能使其在摩擦学领域具有重要的应用价值。采用磁控溅射沉积法制备了Al、AlN单层薄膜与Al/AlN纳米多层膜,探讨了纳米多层化对薄膜的力学性能和摩擦学性能的影响。采用纳米压痕仪和摩擦磨损试验机测量评价薄膜的纳米硬度和摩擦学性能。结果表明:Al/AlN纳米多层膜具有良好的周期调制结构,多层膜中的大量界面能显著提高薄膜的力学性能与摩擦学性能。多层膜的硬度为8.8GPa,高于采用混合法则计算出的硬度值6.6GPa;多层膜具有软质Al层和硬质AlN层的交替结构,在摩擦过程中,硬质AlN层可以起到良好的承载作用,软质层可以起到良好的减摩作用。相对于Al单层薄膜或AlN单层薄膜,Al/AlN纳米多层膜具有较低的摩擦因数(0.15)和优异的抗磨损性能。 相似文献
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Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV. 相似文献