Study of the electrical conduction behaviour of the Ba1−xLaxTi1−xNixO3 (x 0.10) system

The electrical conduction behaviour of the Ba_1−xLa_xTi_1−xNi_xO₃ (x 0.10) system has been studied by complex plane impedance analysis and measurements of a.c. conductivity in the temperature range 400–575 K. The values of the bulk resistance for these samples are obtained from a circular arc passing through the origin in their impedance plots. A.c. conductivity obeys the relation σ_a.c.αω⁸ in the temperature range of measurements. These results indicate that conduction occurs in this system because of hopping of charge carriers between localized nickel sites.     

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Se₈₀Te_20−xGe_x (x = 5, 7 and 10 at%) chalcogenide glass system was prepared by the conventional melt-quenching technique. Thin films of different thicknesses (283–823 nm) were prepared by thermal evaporation technique. The DC conductivity and switching properties were investigated in the temperature range 303–373 K below the corresponding glass transition temperature. The obtained results of DC conductivity showed that it decreases with decreasing Te content in the considered system, while it increases with temperature as well as with film thickness through the studied range. The conduction activation energy has two values E_σ1 and E_σ2 indicating the presence of two different conduction mechanisms through the studied range of temperature. The obtained results of the temperature dependence of DC conductivity are explained in accordance with Mott and Davis model. The switching effect in amorphous films was also investigated. The switching phenomenon for these compositions was of the memory type. The mean value of the threshold voltage increases linearly with increasing film thickness in the range 283–823 mm, while it decreases exponentially with increasing temperature in the investigated range. Values of the threshold voltage and power activation energies were obtained for the investigated compositions. The obtained results agree with the electrothermal model for the switching process.     

Thermoelectric properties of hot-pressed Zn4Sb3−xTex

A series of samples have been fabricated through vacuum melting method followed by hot-pressing for Zn₄Sb_3−xTe_x (x = 0.02–0.08), XRD patterns indicated that all the samples were single-phased β-Zn₄Sb₃. Electrical conductivity and Seebeck coefficient were evaluated in the temperature range of 300–700 K, showing p-type conduction. The thermoelectric figure of merit (ZT) was increased with the increase of Te content. ZT values of 0.8 and 1.0 were obtained at 673 K for Zn_4.08Sb₃ and Zn₄Sb_2.92Te_0.08, respectively.     

Structural, magnetic and electrical transport properties for a series of La1−xSrxFe1−xMnxO3 (0.3 ≤ x ≤ 0.7) compounds

The structural, electrical transport and magnetic properties have been studied for compounds: La_1−xSr_xFe_1−xMn_xO₃ (0.3 ≤ x ≤ 0.7). The lattice parameter, a, first decreases with x, and followed by an increase when Sr²⁺ and Mn⁴⁺ was continuously doped. The cell parameters, b and c, slightly decrease with coupled substitution of Sr²⁺ for La³⁺ and Mn⁴⁺ for Fe³⁺. In the paramagnetic temperature range, formation of magnetic clusters is suggested; the sizes of clusters decrease with x up to 0.5, following that they increase sharply with continuing doping. The electrical behaviors of all specimens demonstrate insulators and the electrical resistivity increases with content of Mn⁴⁺ and Sr²⁺ ions doped. A variable range hopping model is suitable to describe electrical transport process for the compounds at low temperature. At high temperature the electrical transport process can be described by bipolaron model for all compounds.     

Influence of Co substitution on magnetoelastic properties of Er2Fe14−xCoxB (x = 1, 3 and 5) intermetallic compounds

The magnetostriction and thermal expansion of Er₂Fe_14−xCo_xB (x = 1, 3 and 5) intermetallic compounds were measured, using the strain gauge method in the temperature range 75–450 K under applied magnetic fields up to 1.5 T. For all samples the longitudinal magnetostriction (λ_l) undergoes an anomaly around the spin reorientation temperature (T_SR). It is also observed that λ_l decreases with increasing the Co content. All compounds show saturation type behaviour in their anisotropic magnetostriction curves at different temperatures and applied fields. The saturation behaviour of the compound with x = 3 occurs at higher temperatures than with x = 1 and 5. The volume magnetostriction strongly increases below μ₀H = 0.3 T, then monotonically rises with applied field up to the spin reorientation temperature. An invar type behaviour is observed above 200 K in the compound with x = 1. The results are discussed based on the temperature dependence of magnetocrystalline anisotropy of compounds below and above their T_SR.     

Martensitic transformation and anomalies in resistivity of (Ti–50Ni)1−xCx (x = 0.1, 0.5 at.%) shape memory alloys

Phase transformation of solid solution (Ti–50Ni)_1−xC_x (x = 0.1, 0.5 at.%) alloys have been studied by using differential scanning calorimetry, physical property measurement system and optical microscope. The transformation temperature decreases due to the existence of titanium carbide (TiC) particles compared with that of near-equiatomic Ti–Ni shape memory alloy. The resistivity vs. temperature curves show hysteresis. Thermoelastic martensitic transformation occurred in two alloys despite the difference in TiC content. Nevertheless, the resistivity results show different martensitic transformation routes. A one-step B2 → B19′ transformation occurred in the low TiC content alloy and an R transformation appeared in another alloy, suggesting that the martensitic transformation routes depended on the TiC content. The cumulative effect of the TiC particles causes the local stress field and lattice distortion to restrain the transformation of the B19′. On the other hand, the TiC content has an effect on the temperature coefficient of electrical resistivity (TCR) of alloys. The Ti–Ni–0.5C alloy shows a negative TCR in the range 100–300 K during which transformation occurs. Another alloy shows the opposite result. The cause of the negative TCR is briefly discussed.     

Structural, electrical and magnetic properties of Cu1−xZnxFe2O4 ferrites (0 ≤ x ≤ 1)

Copper–zinc ferrites bearing chemical formula Cu_1−xZn_xFe₂O₄ for x ranging from 0.0 to 1.0 with the step increment of 0.2 were prepared by the standard solid-state technique. The variation of Zn substitution has a significant effect on the structural, electrical and magnetic properties. Lattice parameters ‘a’ increased from 8.370 to 8.520 Å. Dielectric constant decreased up to 311 with the increase in frequency from 80 Hz to 1 MHz at room temperature. All the samples follow the Maxwell–Wagner's interfacial polarization. Saturation magnetization, magnetic moment and Yafet–Kittel angles were also determined. The possible reasons responsible for the change in density related, electrical and magnetic properties with the increase in Zn concentration are undertaken.     

Thermoelectric performance of Mg2−xCaxSi compounds

Thermoelectric materials Mg_2−xCa_xSi (x = 0, 0.01, 0.03, 0.05, 0.07, 0.1) compounds have been prepared by vacuum melting followed by hot-pressing. Effects of the substitution of Ca for Mg on phase structures and the thermoelectric properties of the hot-pressed compounds were investigated. It was found that the alloying of Ca in Mg₂Si based compounds increases the electrical conductivity and decreases the Seebeck coefficient of the compounds, due to the electronegativity difference between Ca and Mg. The dimensionless figures of merit of Mg₂Si and Mg_1.99Ca_0.01Si reach, respectively, 0.41 and 0.34 at 660 K.     

Structural, magnetic and electrical properties of (La0.70−xNdx)Sr0.30Mn0.70Cr0.30O3 with 0 ≤ x ≤ 0.30

The structural, magnetic and electrical properties of (La_0.70−xNd_x)Sr_0.30Mn_0.70Cr_0.30O₃ perovskites (0 ≤ x ≤ 0.30) prepared by the usual ceramic procedure were investigated. Structural Rietveld refinement revealed that these compounds crystallize in a rhombohedral perovskite structure when x = 0, 0.10 and 0.20, while for x = 0.30 the structure becomes orthorhombic (Pbnm). It was found that the substitution of La by Nd reduces the Curie temperature (T_C). The FC, ZFC, M(H) and AC susceptibility measurements show typical canted-antiferromagnetism for the Nd-doped samples, in which a ferromagnetic component coexists with predominant antiferromagnetic interactions. The values of the magnetization (M(H)) decrease very slightly when increasing the Nd content, compared to the undoped sample (M_S values at 5 T and 2 K are, respectively, 47.9, 47.3 and 47.5 emu/g for x = 0.10, 0.20 and 0.30, compared to 48.2 emu/g for x = 0), indicating that the Nd³⁺ contribution is negligible compared to the total moment of the ferromagnetic (Mn/Cr) network. The resistivity increases by several orders of magnitude with Nd-doping and the semi-conducting behaviour persists in the whole temperature range. The interaction between Mn⁴⁺–O–Cr³⁺and Cr³⁺–O–Cr³⁺ is responsible for the semi-conducting state.     

Magnetic phase diagram of CrTe1−xSbx (0.0≤x≤1.0)

Measurements of the high field magnetization of CrTe_1−xSb_x (0.0≤x≤1.0) were carried out at 4.2 K in pulsed magnetic fields up to 300 kOe. The temperature dependence of the magnetization of CrTe_1−xSb_x was measured in the temperature range from 4.2 K to 800 K. The magnetic phase diagram of CrTe_1−xSb_x (0.0≤x≤1.0) was determined, which is similar to the typical one for the mixed crystals of the layered antiferromagnetic and ferromagnetic compounds proposed by de Gennes.     

Crystal, electric transport properties and electronic structures of the Ti5Me1−xSb2+x series of compounds (MeCr, Mn, Fe, Co, Ni, Cu)

The Ti₅Me_1−xSb_2+x compounds where MeCr, Mn, Fe, Co, Ni, Cu, were synthesized and their crystal structure was determined (W₅Si₃ structure type, space group I4/mcm). The transport properties were investigated by means of electrical resistivity and Seebeck coefficient measurements in the temperature range 80–380 K. All the investigated compounds exhibit metallic-like type of conductivity confirmed by electronic structure calculations based on Density Functional Theory.     

Thermoelectric properties of novel skutterudites with didymium: DDy(Fe1−xCox)4Sb12 and DDy(Fe1−xNix)4Sb12

In order to improve the thermoelectric properties via efficient phonon scattering Didymium (DD), a mixture of Pr and Nd, was used as a new filler in ternary skutterudites (Fe_1−xCo_x)₄Sb₁₂ and (Fe_1−xNi_x)₄Sb₁₂. DD-filling levels have been determined from combined data of X-ray powder diffraction and electron microprobe analyses (EMPA). Thermoelectric properties have been characterized by measurements of electrical resistivity, thermopower and thermal conductivity in the temperature range from 4.3 to 800 K. The effect of nanostructuring in DD_0.4Fe₂Co₂Sb₁₂ was elucidated from a comparison of both micro-powder (ground in a WC-mortar, 10 μm) and nano-powder (ball-milled, 150 nm), both hot pressed under identical conditions. The figure of merit ZT depends on the Fe/Co and Ni/Co-contents, respectively, reaching ZT > 1. At low temperatures the nanostructured material exhibits a higher thermoelectric figure of merit. The Vickers hardness was measured for all samples being higher for the nanostructured material.     

Studies on structural and thermal expansion properties of Ho2−xLnxMo4O15 (Ln = Er, Sm and Ce) solid solutions

Three new series of Ho_2−xEr_xMo₄O₁₅ (x = 0.0–2.0), Ho_2−xSm_xMo₄O₁₅ (x = 0.0–0.6) and Ho_2−xCe_xMo₄O₁₅ (x = 0.0–0.25) solid solutions have been prepared successfully by solid-state reaction and studied by powder X-ray diffraction. All the XRD patterns of these molybdates can be indexed in monoclinic space group P2₁/c. Lattice parameters a, b and c of Ho_2−xLn_xMo₄O₁₅ decrease linearly with increasing erbium content and increase with increasing samarium or cerium content. Thermal expansion behaviors of Ho_2−xLn_xMo₄O₁₅ have been investigated in the 25–500 °C temperature range with high-temperature X-ray diffraction. The temperature dependence of Mo(2)–O14 interaction looks like to be responsible for their thermal expansion behaviors.     

Study of ac impedance spectroscopy of Al doped MnFe2−2xAl2xO4

We have reported electrical properties of Al doped MnFe₂O₄ ferrite using ac impedance spectroscopy as a function of frequency (42 Hz to 5 MHz) at different temperatures (300–473 K). XRD analysis shows that all the compositions are single phase cubic spinel in structure. The complex impedance analysis has been used to separate the grain and grain boundary resistance of MnFe_2−2xAl_2xO₄. From the analysis of impedance spectra it is found that the real (Z′), and imaginary (Z″) part of the impedance decrease with increasing frequency and both are found to decrease with Al doping up to 20%, and thereafter, these increase with further increasing the Al concentration. Experimental results have been fitted with two parallel RC equivalent circuits in series.     

Studies on structural and electrical properties of Co1−xNixFe1.9Mn0.1O4 ferrite

Nickel-doped iron-deficient cobalt ferrite with small amount of manganese having the chemical composition Co_1−xNi_xFe_1.9Mn_0.1O₄, with x = 0.2, 0.4, 0.6 and 0.8, were prepared by standard double sintering ceramic method. The spinel phase formation was confirmed by X-ray diffraction (XRD). The DC resistivity measurements with temperature indicate a semiconducting behavior showing a linear decrease with increasing temperature and the doping of Ni enhances the resistivity. Maximum resistivity of the order of 10⁹ Ω cm was found for composition x = 0.8. Room temperature dielectric constant measurements with frequency (100 Hz to 1 MHz), show usual dielectric dispersion. Also, the variation of room temperature AC conductivity as a function of frequency were studied and explained by using Maxwell–Wagner two-layer model. The studies on dielectric constant (′), loss tangent (tan δ) and AC conductivity (σ_AC), at four different frequencies (viz., 1, 10, 100 kHz and 1 MHz), with temperature were made.     

Effect of Yb substitution on microstructure, physical and mechanical properties of negative thermal expansion Zr1−xYbxWMoO8−x/2 (x = 0–0.05) ceramic

Cubic Zr_1−xYb_xWMoO_8−x/2 (x = 0–0.05) ceramic was first fabricated by a polymorphous precursor transition method. X-ray diffraction experiment indicates that samples with x ≤ 0.05 are single phase solid solution. The measured bulk density, microstructure, maximal compression strength and Young's modulus are obviously sensitive to Yb substitution level, while none of such sensitivity was found for the lattice parameters, negative thermal expansion coefficients and Vickers hardness. Drilling tests on Zr_0.96Yb_0.04WMoO_7.98 ceramic indicate good machinability, which is often required for quality and shape control in engineering applications.     

Magnetic ordering and magnetic properties of ErAuxNi1−xIn (0 ≤ x ≤ 1) solid solution

The ErAu_xNi_1−xIn (0 ≤ x ≤ 1) quasiternary compounds crystallize in the hexagonal layered crystal structure of ZrNiAl-type. ErAuIn was reported to be an antiferromagnet with T_N = 3 K and magnetic moments having triangular arrangement within the basal plane (the magnetic order is described by the propagation vector ). On the contrary ErNiIn is a ferromagnet with T_C = 9 K and magnetic moments pointing along the c-axis. The magnetic ordering in ErAu_xNi_1−xIn (0 < x < 1) solid solution, has been investigated by neutron diffractometry in the temperature range between 1.5 and 15 K. Moreover, bulk magnetic measurements have been carried out in the range 1.72–400 K. All alloys of intermediate composition were found to be antiferromagnets with T_N between 4.6 and 7 K. Below 2 K their magnetic order is described by the propagation vector and magnetic moments are aligned along the c-axis. However, for alloys with 0.2 ≤ x ≤ 0.7 the propagation vector was found to turn into with increasing temperature.     

AC electrical resistance measurements of PdHx samples versus composition x

Electrical and optical properties of SnO₂ film deposited on indium tin oxide substrate by dip coating have been investigated. The electrical conductivity of the SnO₂ film exhibits the extrinsic conductivity mechanism with two shallow and deep donor levels. The current voltage characteristics of SnO₂ film confirm the presence of space charge limited conduction. The density of states at the Fermi level N(E_F) for the SnO₂ film was determined using current–voltage characteristics and was found to be 1.63 × 10¹⁶ eV⁻¹ m⁻³. The Seebeck coefficient of the SnO₂ at room temperature indicates the n-type electrical conductivity. The Seebeck coefficient suggests that the electrical conductivity of the SnO₂ film varies from n-type conductivity to p-type conductivity with increasing temperature. The optical constants, such refractive index as dielectric constants, were determined from the reflectance, transmittance and absorption spectra. The refractive index dispersion behavior of the SnO₂ film obeys the single oscillator model. The fundamental absorption edge in SnO₂ film is formed by the direct allowed transitions with band gap of 3.40 eV.     

Investigation of the dependency of the upper critical magnetic field on the content x in Y1−xYbx/2Gdx/2Ba2Cu3O7−y superconducting structures

The Y_1−xYb_x/2Gd_x/2Ba₂Cu₃O_7−y superconducting samples for x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0 were prepared by using the solid-state reaction technique. Resistivity measurements of the samples were performed in QD–PPMS system under different magnetic fields up to 5 T in zero fields cooling regime. Using the resistivity data, the upper critical magnetic field H_c2(0) at T = 0 K for 50% of R_n was calculated by the extrapolation H_c2(T) to the temperature T = 0 K. The coherence length in T = 0 K were calculated from H_c2(0) and the effects of x in the composition on both the coherence length and the upper critical magnetic field were examined. The results showed that H_c2(0) varied from 84.05 to 122.26 T with the content x. The upper critical magnetic field in the temperature T = 0 K slightly decreased with increasing the content x. Using the content x, the upper critical magnetic field can be controlled and this can be used in the superconductivity applications.     

Transport properties of the CexLa1−xPt alloy system

In order to investigate the Kondo ferromagnetism in the CePt compound, we have measured transport properties, resistivity and thermopower, of the Ce_xLa_1−xPt alloy system from 2 K to 320 K. The extraction of the magnetic contribution to the resistivity reveals the existence of the Kondo interaction in all the alloys, but only at higher temperatures. We estimated that the first excited crystal field level of the Ce ion is 100 K. The Kondo characteristics, can be observed at low temperatures only for the lowest concentration measured, where we estimated that the magnetic ordering, if exists, is at 0.34 K. The low temperature minimum of the thermopower is also discussed.