Ti(C,N)复合膜和TiN/Ti(C,N)多层膜组织和显微硬度

采用非平衡反应磁控溅射的方法在Si(100)基片上沉积Ti(C,N)复合膜和不同调制周期、调制比的TiN/Ti(C,N)纳米多层薄膜。薄膜的微观结构和力学性能采用X射线衍射仪(XRD)、显微硬度计进行表征。结果表明,Ti(C,N)复合膜的微观结构和力学性能与掺入C的含量有关;TiN/Ti(C,N)纳米多层膜的微观结构和力学性能与调制周期和调制比有关,其显微硬度在一定的调制周期和调制比范围内出现了超硬现象。Ti(C,N)、TiN/Ti(C,N)均为δ-NaCl面心立方结构;Ti(C,N)复合膜显微硬度提高是因为固溶强化,TiN/Ti(C,N)纳米多层膜硬度的提高主要是共格外延生长在界面处产生的交变应力场。     

MOCVD制备的Pt/C薄膜的结构与性能研究

以乙酰丙酮铂为前驱体,采用金属有机化合物化学气相沉积(MOCVD)法在石英及YSZ基体上制备Pt/C薄膜,研究了Pt/C薄膜的结构和电化学性能.沉积过程中通入一定量的氧气可以大幅降低Pt/C薄膜中的含C量,含C较高的Pt/C薄膜的XRD谱线低而宽,具有非晶态衍射特征.在500℃测量温度下,以Pt/C薄膜为电极的YSZ氧气浓差电池的电动势及电流输出高于传统的Pt电极.     

电沉积Co-W合金薄膜的性能研究

柠檬酸盐存在的酸性镀液qa(pH=4.0),通过改变[WO42-]/[Co2+]比值电沉积制备了Co-W合金薄膜.使用XRD对薄膜的微结构和相组成进行了分析,结果表明沉积态时,Co-W合金薄膜具有晶态结构;随着薄膜中Co、W含量的不同,薄膜从富Co的面心立方相向Co+Co7W6+Co3W共存相转变.采用FE-SEM对薄膜表面形貌和组成分析表明:Co-W合金薄膜中Co含量较高,随着镀液中[WO42-[Co2+]比值的增加,薄膜中W含量会增加,膜面逐渐变得致密;当镀液中[WO42-]/[Co2+]=0.5时,薄膜中W含量达到最大值,同时膜面上出现大量气孔.通过VSM对薄膜磁性能进行了测试,结果显示Co-W合金薄膜的易磁化轴平行于膜面.     

反应溅射WS_2/MoS_2/C复合薄膜的摩擦磨损性能

为了扩展在潮湿条件下WS2/MoS2复合薄膜的应用,使用WS2/MoS2作靶材,在Ar/C2H2气氛中通过反应溅射法制备WS2/MoS2/C复合薄膜。利用X射线衍射仪(XRD)、X射线能谱仪(EDX)、场发射扫描电子显微镜(FESEM)、MFT-4000材料表面性能试验仪表征薄膜的性能以便评价薄膜的微结构与摩擦性能的关系。结果表明:与纯MoS2薄膜相比,WS2/MoS2/C复合薄膜结构致密,硬度提高一个数量级;在潮湿的大气中复合薄膜的摩擦因数更低,抗磨损能力更强。     

Co掺杂非晶C薄膜的低温磁输运特性及磁性能研究(英文)

采用磁控共溅射方法在n型Si(100)基片上制备了一系列具有不同Co含量(x,at%)的Co掺杂非晶C颗粒薄膜,溅射温度为室温。研究了Co-C颗粒薄膜的微结构,磁输运特性及磁性能。通过优化Co含量,在低温下发现了较大的负磁电阻(MR)。温度为2K、磁场为90×79.6kA.m-1时,Co含量为6.4at%的Co-C薄膜的负磁电阻值最大,达到27.6%。随着Co含量从6.4at%增加至16.4at%,MR值从27.6%逐渐减小至2.2%。电阻率??随温度T的变化曲线显示了线性的ln?-T-1/2关系,说明样品中电子传导遵循隧穿输运机制。     

Nd含量对磁控溅射Si(111)/Cr/Nd-Co/Cr薄膜结构与磁性的影响

采用磁控溅射技术制备了系列Si(111)/Cr(10 nm)/NdCox(400 nm)/Cr(10 nm)薄膜,其中,Co/Nd原子比x=2.5～7.2。利用XRD、SEM、AFM/MFM、VSM等手段研究了Nd含量对制备态薄膜垂直磁各向异性(PMA)与磁畴结构及退火态薄膜相结构与磁性的影响规律。结果表明,随着Nd含量的变化,制备态Nd-Co薄膜的垂直磁各向异性能Ku在x=5.2附近存在一个较宽的峰,峰值处Ku=(80±5) kJ/m~3。MFM图像的相移均方根偏差(Δφrms)在临界成分x=5.2处也存在最大值,其成分依赖关系与Ku-x的变化趋势一致。薄膜应力诱导的磁弹各向异性是导致溅射Nd-Co非晶薄膜PMA的主要原因。经过在600℃真空快速退火后,所有薄膜均析出了Nd2Co17、NdCo2、Nd4Co3等金属间化合物,而NdCo5±x相纳米晶只在Nd过量(至少4%,原子分数)的x=2.5和3.8薄膜中才被观测到,同时还伴随着Nd_2Co_7共生相的析出。室温磁性测试结果表明,NdCo5±x和Nd_2Co_7相纳米晶的析出,导致x=2.5和3.8薄膜面内矫顽力(分别为Hc-in=54和51 kA/m)显著增强;而x≥4.4样品的面内矫顽力保持在低值(Hc-in=4～8 kA/m)范围内。     

C/C复合材料与TC4钎焊接头的组织与断裂形式分析

在钎焊时间10 min,钎焊温度820～900℃的条件下,采用AgCu钎料对C/C复合材料和TC4进行了钎焊试验.利用扫描电镜、X射线衍射分析仪、EDS能谱分析仪对接头的界面组织及断口形貌进行了研究.结果表明,C/C复合材料与TC4连接接头的界面结构为C/C复合材料/TiC C/TiCu/Ag(s.s) Cu(s.s) Ti3Cu4/Ti3Cu4/TiCu/Ti2Cu/Ti2Cu Ti(s.s)/TC4.由压剪试验测得的接头抗剪强度可知,在钎焊温度850 ℃,保温时间10 min的钎焊条件下,接头获得的最高抗剪强度达到38 MPa.接头的断口分析表明,接头的断裂位置与被连接处碳纤维方向和钎焊温度有关.当碳纤维轴平行于连接面时,断裂发生在复合材料中.当碳纤维轴垂直于连接面时,若钎焊温度较低,断裂发生在C/C复合材料/钎料界面处;若钎焊温度较高,断裂主要发生在C/C复合材料/钎料界面和钎料/TC4界面处.     

Co掺杂LiFePO4/C的共沉淀——微波合成及电化学性能

采用共沉淀-微波法制备了Co掺杂的锂离子电池正极材料LiFe1-xCoxPO4/C(x=0.00、0.01、0.03、0.05、0.07、0.09).研究了微波时间、柠檬酸量、掺Co量等因素对材料结构、形貌和电性能的影响.XRD、SEM和电化学测试表明:该方法制备的样品为橄榄石型非晶结构,粒径尺寸为0.5～5 μm,颗粒分布比较均匀.微波15 min、柠檬酸量为20wt％时,LiFePO4/C电化学性能最优,0.1C倍率放电可达124 mA·h/g,第20次循环的比容量为117mA·h/g.掺杂Co在很大程度上可以提高LiFePO4/C的电化学性能,当Co含量为5wt％时,LiFe0.95Co0.05PO4/C的比容量为最大值,0.1C倍率放电可达136 mA·h/g,第20次循环的比容量为125 mA· h/g,容量保持率为91.9％.     

C/C复合材料表面CoNiCrAlTaHfY/Co复合涂层的组织

在H2+Ar等离子刻蚀后的C/C复合材料表面进行等离子渗Co和CoNiCrAlTaHfY共渗复合处理,形成CoNiCrAlTaHfY/Co多元复合涂层,通过与刻蚀前后制备的CoNiCrAlTaHfY涂层对比分析,研究了刻蚀与Co过渡层对CoNiCrAlTaHfY/Co复合涂层组织、成分及结合强度的影响。结果表明,刻蚀前、后形成的CoNiCrAlTaHfY涂层厚度分别为10μm和14μm。刻蚀处理后,原棒状炭纤维与紧密包裹其的碳基体分别被刻蚀成针状和薄壁管,在炭纤维与基体碳之间形成孔隙,比表面积也相应增大,促进元素形核和扩散,使涂层与基体结合强度增加。在刻蚀表面与CoNiCrAlTaHfY多元涂层间增加Co过渡层,形成的CoNiCrAlTaHfY/Co复合涂层厚约30μm,复合涂层成分连续,组织均匀致密,由CrCoTa,Al2Ta,Cr2Ta,Alx Cry,Al Co2Ta,Co,AlxNiy组成,Co过渡层与CoCrAlTaHfYNi表层分别以三维岛状和柱状生长。CoNiCrAlTaHfY表层/Co过渡层/基体间的互扩散导致涂层与基体间的结合力明显提高。     

Co含量对MOFs衍生的片状Co/C复合材料吸波性能的影响

金属有机骨架(MOFs)衍生的磁性金属/碳复合材料在轻质吸波材料领域展现出巨大的潜力。以二维片状结构Co/Zn双金属MOFs为前驱体通过高温热解合成片状Co/C复合材料,系统研究了前驱体中Co/Zn摩尔比对复合材料形貌结构、石墨化程度、磁性能和吸波性能的影响。结果表明：金属Co纳米微粒在碳骨架中均匀分布,随着Co含量的减少,复合材料中碳组分的石墨化程度逐渐降低,铁磁特性逐渐减弱;片状Co/C复合材料的吸波性能随着Co含量的降低先增强后减弱,填充比例为30 wt%、Co/Zn摩尔比为4:1时片状Co/C复合材料具有最佳吸波性能,厚度为2.11 mm时在10.8 GHz处最小反射率为-23.09 dB,最大有效带宽(反射率小于-10 dB)在厚度为1.62 mm时达到4.96 GHz。复合材料良好的吸波性能是由于均匀分布的磁性Co纳米粒子和碳骨架的协同作用,在增强电磁波导电损耗和界面极化损耗的同时,改善了阻抗匹配性能。     

L1o-CoPt/Co bilayer ferromagnetic films: interdiffusion,structure and microstructure

Detailed understanding of the connections between nanostructure and magnetic properties is key to the realization of optimal exchange-spring magnets. To this end, x-ray and electron diffraction and transmission electron microscopy were used to study the evolution of phases, microstructure and texture of model exchange-spring bilayers of L1₀ - CoPt/Co upon annealing at temperatures ranging from 300–550 °C. The work was motivated by previously—detailed changes in the magnetic exchange coupling of the system induced by the annealing treatments [1]. Unannealed CoPt/Co bilayers comprised a <111> fiber-textured L1₀ CoPt layer and a <0001> fiber-textured Co layer. The Co layer predominantly consisted of the hcp (A3) form, but contained a minority fcc (A1) phase. Annealing the bilayers at low temperatures (300–450 °C) or for short times resulted in a strengthening of the hcp Co <0001> fiber texture and disappearance of the minor fcc phase. By contrast, annealing at higher temperatures (450–550 °C) or for longer times resulted in the interdiffusion of the Co and CoPt layers and the formation of new Co-Pt solid solutions. One of these solid solutions was found to be hcp in structure, while the other was fcc. The amount of the fcc solid solution increased at the expense of the L1₀ CoPt, hcp Co and hcp Co-Pt solid solution phases as annealing time and temperature were increased.     

Magnetic properties and structure of （001）-oriented [CoPt/C]n/Ag nanocomposite films on the glass substrates

The highly （1301） oriented triple system of [CoPt/C]n/Ag films was deposited on glass substrates by DC and RF magnetron sputtering. After annealing at 600℃ for 30 min, thin films become magnetically hard with coercivities in the range of 160-875 kA/m because of high anisotropy associated with the L10 ordered phase. C doping plays an important role in improving （001） texture and reducing the intergrain interactions. The oriented growth of CoPt films was influenced strongly by the number of repetitions （n） of CoPt/C. By controlling the C content and the number of repetitions （n） of CoPt/C, nearly perfect （001） orientation can be obtained in the [CoPt3nm/C3nm]5/Ag50 nm.     

Effects of Ag layers on the microstructure and magnetic properties of CoPt/BN multilayer films

Ag/[BN/CoPt]5/Ag and [BN/Ag/CoPt]5/Ag thin films were deposited on glass substrates by magnetron sputtering and then annealed in vacuum at 600 ℃ for 30 min.The structures and magnetic properties of CoPt/BN multilayer films were investigated as a function of Ag layer thickness.It was found that the face-centered tetragonal (fct) (001) texture of CoPt was improved greatly by introducing the Ag toplayer or sublayer together with an Ag underlayer.Good (001)-oriented growth,low intergrain interactions as well as...     

Magnetic interactions in nanostructured films and arrays

This paper presents recent results on magnetic interactions in CoPt:C nanocrystalline films and Co:C magnetic nanodot arrays. The local magnetic properties were studied by magnetic force microscopy. We discuss the limit of the using ΔM for characterization of magnetic interactions in these CoPt:C nanocrystalline films. The magnetic force microscopy images of patterned Co:C nanodot arrays show the presence of “macro”-domains (domains formed by several separate dots). This behavior is attributed to the exchange coupling between the dots.     

Effect of Cu additive on the structure and magnetic properties of (CoPt)1-xCux films

CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering tempera-ture of CoPt films. A nearly perfect (001) texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing tempera-ture.     

Effect of Cu additive on the structure and magnetic properties of （CoPt）1-xCux films

CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect (001) texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.     

Study of the grain growth mechanism of CoPt/Cn thin film for magnetic recording media using the Monte Carlo simulation

The effect of carbon addition on the grain growth and ordering kinetics of CoPt film has been studied experimentally by sputter-depositing a monolithic CoPt-20 at.%C film of 24nm. The carbon addition of 20 at.% to CoPt thin film in the form of CoPt (20nm)/C_n (4 nm) (n=1, 4) significantly reduced both the grain growth and ordering kinetics. Reducing the thickness of the carbon layer, i.e. from n=1 to n=4, led to a much finer grain size distribution as well as to a finer grain size. The Monte Carlo simulation study indicated that the decrease of grain growth and ordering kinetics is primarily due to a continuous decrease of the mobility of the order—disorder inter-phase with the progress of the ordering reaction. Reduction of the inter-phase mobility can eventually lead to a stable two phase grain structure inter-locked by low mobility inter-phase and is responsible for the formation of a fine grain size distribution in the CoPt/C_n film with n=4.     

Spin-dependent transport in nanocomposite C:co films

The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 °C. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μΩ cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promising candidates for carbon-based Hall sensors and spintronic devices.     

Microstructure and magnetic properties of Ti/Co/Ti films

The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1 .     

Inter-granular exchange coupling and magnetic anisotropy of Ta/Ru/Co-23 at%Pt perpendicular thin films with different Ru underlayer thicknesses

In the present work, a series of Ta/Ru/Co-23 at%Pt thin films with varied Ru underlayer thicknesses were fabricated by magnetron sputtering. All of the films show c-axis preferred orientation perpendicular to the film surface. The drop of c/a ratio and lattice expansion of Co–Pt layer with the increase in Ru underlayer thickness was revealed by X-ray diffraction(XRD). The coercivity of the Ta/Ru/Co–Pt thin films increases drastically with Ru underlayer thickness increasing, due to the enhancement of effective magneto-crystalline anisotropy constant and exchange decoupling of magnetic nano-grains. The enhancement of effective magneto-crystalline anisotropy constant is ascribed to the lattice deformation of Co–Pt layer by mismatching the Ru layer and Co–Pt surface.Moreover, the exchange decoupling of magnetic nanograins is attributed to the further isolation of magnetic nano-grains.