通过信号分离抑制离散变化变量传感器漂移噪声

在传感器的输出信号中,漂移噪声是一阶或一阶以上连续的,而在有的传感器中,传感量的变化在时间轴上是离散的,正是基于这两个显然不同的信号特征,本文提出在这类传感器中,利用输出采样的差分值,从传感器输出中将传感信号和漂移信号分离,不采用任何其它的漂移变量补偿元件和电路,可以消除零点漂移,补偿灵敏度漂移。     

石英谐振式数字称重传感器

介绍了一种由柔性铰链构成的弹性体结构和 Ａ Ｔ 切型石英谐振器组成的石英谐振式数字称重传感器。通过仔细设计弹性体的结构形式和石英谐振器在弹性体中的位置,可以消除传感器的四角误差,使之象电阻应变式称重传感器一样经过简单的调整就可以作为电子衡器的传感器。由于 Ａ Ｔ 切型石英谐振器在加力方向角约为４０°处存在着力频转换系数温度影响为零的点,利用这一特性可以使传感器的灵敏度温度系数在没有补偿的情况下达到３×１０－ ４／° Ｃ。通过改变柔性铰链的尺寸可以设计不同量程的传感器,并给出了量程为 ２００ Ｎ 的传感器的精度指标。     

一种单片集成压力传感器信号调理电路的设计

针对单片集成压力传感器输出幅度较小、温度漂移会引起压力精度变化等难题,提出了一种新型的信号调理电路。该电路通过两个差分放大电路和四个D/A转换器来解决单片集成压力传感器的小输出和温度漂移问题。仿真结果表明,在5 V电源电压下,在0 ℃～85 ℃温度范围内,信号调理电路的最大误差可以减少到满量程输出的1.8 %。     

一种单片集成压力传感器信号调理电路的设计

针对单片集成压力传感器输出幅度较小、温度漂移会引起压力精度变化等难题,提出了一种新型的信号调理电路。该电路通过两个差分放大电路和四个D/A转换器来解决单片集成压力传感器的小输出和温度漂移问题。仿真结果表明,在5V电源电压下,在0℃~85℃温度范围内,信号调理电路的最大误差可以减少到满量程输出的1.8%。     

石英谐振加速度计低温漂结构设计及温度补偿

温度影响加速度计的性能,误差来源主要由石英材料及封装工艺产生的热应力引起。针对加速度计温度漂移现象,该文介绍了集成式石英谐振加速度计低温漂结构设计和补偿方法。首先通过对称的差分结构消除一阶温度系数,并进行工艺优化,降低封装工艺对谐振器产生的热应力;其次采用随机森林拟合算法建立温度模型来补偿加速度计的温漂。在-20～80℃温度范围内对加速度计样机进行温漂测试,结果表明,工艺优化及补偿后的样机偏置稳定性提高了一个数量级。     

相位编码光电模数转换系统对时钟强度噪声影响的校正

分析了相位编码的光模数转换系统对采样时钟的强度噪声及不均匀性的消除作用,并用实验证明了该结构的有效性。通过测量差分输出光电调制器的两个输出端口信号,针对采样时钟存在强度抖动及不均匀性等特征,基于归一化差分方法进行数据处理和校正。结果表明:相位编码方法可有效抑制时钟强度噪声及不均匀性的影响,提高系统的有效比特精度。     

基于能陷理论的石英力敏谐振器集群的设计

石英谐振器可以作为传感器的敏感元件。为了减小温度等因素的干扰,提高石英晶体谐振器力敏特性,通过能陷理论及其厚度剪切石英晶体谐振能量分布曲线的计算,在同一圆形晶片上设计了多电极力敏谐振器集群。根据共模抑制原理,将谐振器集群输出频率信号作差频处理,以此抑制温度等因素的干扰,再将差频信号叠加以提高石英晶体谐振器集群整体力敏特性。实验结果表明,石英谐振器集群差频输出的温频特性明显优于传统的单电极谐振器,石英晶体谐振器集群整体力灵敏度系数提高到9 992 Hz/N。     

微环差分光子生物传感器的传感性能

通过模拟仿真,研究了基于绝缘衬底上的硅（Silicon-On-Insulator,SOI）的微环生物传感器的传感性能,得出其体传感灵敏度为38.71 nm/RIU,探测极限为1.810-3 RIU,Q值为2.22104。基于该结构,分析了噪声对传感器性能的影响,包括光源噪声和温度噪声。为了降低噪声影响,设计了具有参考和探测通道的双微环差分传感器,通过差分运算扣除噪声引起的谐振波长漂移,从而可以有效降低噪声对传感器探测结果的影响。通过数值模拟和计算,其被探测物的折射率变化的相对误差减小了15.85%,表明微环差分传感器可以有效降低噪声的影响,对提高微环生物传感器的性能将有极大的促进作用。     

基于ARM技术的捷联惯导系统信号降噪分析与设计

利用ARM技术,设计了捷联惯导系统。为了提高惯导系统的稳定性,需要对陀螺信号的零位进行校正以及对漂移进行抑制。首先对加速度传感器、磁场传感器、陀螺输出的信号进行采样与滤波,尤其在对陀螺信号的处理过程中,需要设计一个高性能、低运算量的低通数字滤波器,并合理设计信号调理电路,以提高敏感器件的工作效率和有效抑制器件所引起的零位漂移。实验结果表明,零位漂移≤0.1(°)/s/h,其他的多项技术指标也达到了应用的标准。     

热激励硅基双梁谐振型压力传感器

针对热激励硅基谐振型压力传感器温度漂移严重的问题,提出了一种双梁硅基谐振型压力传感器结构,利用不测试压力的谐振梁感应温度对谐振梁的变化,并与测试压力的谐振梁相减,消除测试压力的谐振梁随温度变化的部分,补偿热激励硅基谐振型压力传感器的温度漂移.通过实验,研制出双梁结构的硅基谐振型压力传感器样品,初步测试结果显示,温度漂移的影响已降低到原来的1/30,大大提高了热激励硅基谐振型压力传感器的测试精度.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.