Quantum-well resonant tunneling bipolar transistor operating at room temperature

The first resonant tunneling bipolar transistor (RBT) is reported. The AlGaAs/GaAs wide-gap emitter device, grown by molecular beam epitaxy (MBE), contains a GaAs quantum well and two AlAs barriers between the emitter and the collector. In the common emitter configuration, when the base current exceeds a threshold value, a large drop in the collector current (corresponding to a quenching of the current gain β) is observed at room temperature, along with a pronounced negative conductance as a function of the collector-emitter voltage. These striking characteristics are caused by the quenching of resonant tunneling through the double barrier as the conduction band edge in the emitter is raised above the bottom of the first quantized subband of the well. Single-frequency oscillations are observed at 300 K. The inherent negative transconductance of these new functional devices is extremely valuable for many logic and signal processing applications.     

量子电子器件——谐振隧道热电子晶体管(RHET)

RHET是一种新型高速功能器件,在这种器件中,电子谐振隧穿量子阱谐振隧道势垒(RTB)从发射极注入到基极中,然后以准弹道方式传输到收集极。其主要特点是,高速的电荷传输和宽的负微分电阻。本文综述了RHET的研究与进展,并介绍了采用RHET构成的集成电路。     

Inverted bistability in the current-voltage characteristics of a resonant tunneling device

The current-voltage characteristics of an asymmetric double barrier resonant tunneling device show a butterfly-shaped hysteresis loop in which, for a range of voltage, the off-resonant current exceeds the resonant current. This “inverted bistability” is due to the effects of space charge buildup in the quantum well. Magnetoquantum oscillations in the tunnel current with | are used to investigate the distribution of charge within the device and the intersubband scattering processes which control the charge buildup.     

A study of resonant tunneling in a 3-terminal ballistic device

Preliminary results are presented for a 3-terminal device fabricated by incorporating a narrow quantum well into the collector barrier of a unipolar hot electron transistor. The structure allows unique studies of the mechanism of resonant tunneling in which the carrier injection energy and the bias across the double barrier can be independently varied. The transistor clearly shows an additional current collection threshold representing as much as 10% of the injected current attributable to tunneling via the single subband in the quantum well. This interpretation is confirmed by measurements in perpendicular and parallel magnetic fields despite the fact that theoretical estimates of the resonant tunneling current without scattering are many orders of magnitude smaller, and there are strong indications that elastic scattering in the well is responsible for the enormous discrepancy. The data tend to support proposals (Guéret, 1989a, 1989b; Wolak, 1988) that elastic scattering is responsible for the large valley currents in resonant tunneling diodes, and it appears that the tunnel process may not be completely incoherent as has frequently been assumed up to now.     

Demonstration of a hot‐carrier photovoltaic cell

We demonstrate a new hot‐carrier photovoltaic cell based on the resonant tunnelling of hot electrons from a narrow‐band‐gap semiconductor to a wider‐band‐gap semiconductor. Hot electrons are photogenerated at a variety of wavelengths in a GaAs absorber followed by resonant tunnelling through a double‐barrier quantum well into an AlGaAs collector, forming an energy‐selective interface in the centre of the device. We show theoretically the presence of a tunnel current from the absorber to the collector under illumination, offering a method to extract carriers from a hot‐electron distribution at zero bias. We experimentally demonstrate a hot‐carrier photovoltaic cell based on this concept. Two features of its measured current–voltage characteristic, namely the peak to valley current ratio and the current peak voltage, are shown to vary with the wavelength of illumination in a way that clearly demonstrates hot‐carrier extraction. Copyright © 2013 John Wiley & Sons, Ltd.     

多重散射理论对光子晶体量子阱结构光子共振透射的研究

用球面波展开的多重散射理论计算了光子量子阱的透射系数.光子量子阱由两层光子势垒之间夹置一层均匀介质构成,由于光子带隙的失配,类似于电子量子阱,形成所谓光子量子阱.对透射峰位置的计算结果表明某些光子态以量子化的形式存在,满足量子化频率关系.同时证明有限高的光子势垒在不同光子能级中起到不同的限制作用.共振峰的位置和数量可通过改变阱宽而实现人工调控,通过适当选择阱和垒的参数能够实现高质量的多通道滤波.对光子晶体耦合双量子阱的计算表明,当阱间的垒宽度增加时,两个模式的耦合减弱,模式分裂的间距减小.     

Proposal and analysis of resonant tunnelling diode with singlepeaked I-V characteristics

A novel resonant tunnelling diode with single peaked I-V characteristics is proposed. In this diode, the resonant tunnelling effect in a vertical double barrier structure is coupled with the pinch-off effect in a lateral collector just beneath the structure. Using a one-dimensional distributed parameter model, the dependence of the I-V characteristics on the device parameters (emitter width and collector thickness) is investigated systematically     

InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistorsgrown by chemical beam epitaxy

InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In_0.75Ga_0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz     

InP基RTD特性的数值模拟研究

采用基于非平衡格林函数法(Non-equilibrium Green’s function,NEGF)量子输运模拟器WinGreen对InP基共振隧穿二极管(RTD)的输运特性进行了计算模拟,分析了Ga0.47In0.53As/AlAs以及富In组份势阱双势垒结构几何参数、散射参数、发射区和集电区掺杂浓度以及隔离层厚度对InP基RTD器件I-V特性的影响。模拟结果表明,采用富In组份的势阱有利于降低峰值电压,提高发射区掺杂浓度有利于增大峰值电流密度,而散射则会导致谷值电流增大,影响其负阻特性。     

Single electron charging and single electron tunneling in sub-micron AlGaAs/GaAs double barrier transistor structures

Transport phenomena in a specially optimized vertical asymmetric sub-micron Al_0.28Ga_0.72As/GaAs double barrier structure with modulation-doped barriers is investigated by applying a bias to a special Schottky side gate, which allows the effective area of the conducting channel to be finely “tuned”. For a sufficiently small device, the electrical properties of the controllable quantum dot bounded by well defined heterostructure barriers and an adjustable side wall potential are expected to be governed by single electron charging, and single electron resonant tunneling. Single electron transistor (SET) operation is possible because the number of electrons in the dot, n, can be varied one-by-one with the side gate. The drain current flowing through the conducting channel in response to a small drain voltage is strongly modulated by the gate voltage close to “pinch-off” as n approaches zero, and oscillations in the drain current persist up to about 25 K. A gate modulated zero current region of Coulomb blockade, step-like features, and resonances exhibiting negative differential resistance are clearly observed at low bias. Although this technology is very promising for the realization of SET operation at temperatures well above 4.2 K, the temperature dependence of the Coulomb blockade is an important limitation. We describe the evolution of the conductance oscillations and the degradation of Coulomb blockade with temperature from 0.3 K up to 25 K, and propose that co-tunneling in a small system containing just a “few” electrons in which the zero-dimensional energy level spacing is significant and comparable to the Coulomb charging energy is important, and is likely to be more complex than that documented for large planar dot structures containing “many” electrons.     

Quantum chaotic transport in double barrier tunnel structures

The transition from regular to chaotic classical electron dynamics in a wide potential well with a high tilted magnetic field is investigated using Poincaré sections. The corresponding quantized energy level spectrum for the well is calculated as a function of the tilt angle π. For values of π where the system exhibits strong classical chaos, the distribution of nearest-neighbor level spacings obeys universal Wigner statistics. Regular long-range fluctuations in the density of levels are identified and related to distinct unstable closed classical orbits in accordance with the Gutzwiller trace formula. These orbits are found to produce regions of high probability density (scars) in the wavefunctions associated with subsets of almost equally-spaced energy levels. The energies of these scarred states can be located using a simple semiclassical quantization rule. This periodic scarring of individual wavefunctions is shown to have a pronounced influence on the tunneling characteristics of double barrier structures. Tunneling transitions into the scarred states dominate the current-voltage curves and generate a series of resonant peaks as observed in recent magnetotunneling experiments. Regimes in which resonant tunneling spectroscopy might provide experimental evidence for the existence of scarred states are identified.     

Traversal time in an asymmetric double-barrier quantum-wellstructure

A study of traversal time for asymmetric double-barrier quantum-well structure (DBQWS) is presented. The calculations are self consistent in nature. The analysis shows that traversal time is affected more strongly by the width of the emitter barrier than that of the collector barrier of the structure in the presence of space charge. Bistability in traversal time is observed. Bistability becomes greater if the emitter barrier is made wider than the collector barrier and is explained in terms of space charge developed in the quantum well. However, a wider collector will dominate traversal time at zero bias, especially at eigen energy     

δ掺杂样品中空穴态的新行为

用有效质量理论研究了δ掺杂势中电子和空穴的行为。发现能量接近于δ势垒峰的空穴穿越势垒时能产生一系列谐振态。这些状态中的空穴波函数汇聚在势垒峰周围而同量子限制在势阱中的电子波函数交叠,产生光跃迁。用MBE生长的δ掺杂样品进行光调制光谱测量,发现明显的带间跃迁峰。测得的光谱峰同理论计算的能级相吻合,证实了δ势垒中空穴的新行为。     

Y型量子线中电子弹道输运性质

对有限长Y型量子线中的电子弹道输运性质进行了量子力学计算．该有限长的量子结构分与两半无限长的量子通道相连,当施加一偏压时,量子通道分别可作为电子的发射极和收集极．采用了转移矩阵方法和截断近似技术．计算结果表明,当结构对于x轴对称时,在入射电子的能量小于量子结构的第一个横向本征模时,电导存在着两个峰;当结构对于x轴不对称时,电导则存在着三个峰．进一步分析表明,这些峰来自于电子共振隧穿量子结构中的量子束缚态．该结构对于经典粒子来说是非束缚体系．当结构对于x轴对称时,较高能级是双重简并的,而当结构对于x轴不对称时,该能级的简并度消除．     

A self-consistent model of magneto-tunneling

We present a calculation of resonant tunneling in double barrier heterostructures in the presence of magnetic fields. Charge injection and the effective carrier potential are incorporated in self-consistent fashion. It is shown that this approach leads to improved agreement between theory and experiment. As compared to a non-self-consistent calculation, peak-to-valley ratios remain virtually unchanged, however, current peaks are highly asymmetric and increased both in height and width. Furthermore, current maxima are shifted to higher bias and intrinsic bistability is obtained in certain voltage regions.     

Y型量子线中电子弹道输运性质

对有限长 Y型量子线中的电子弹道输运性质进行了量子力学计算 .该有限长的量子结构分与两半无限长的量子通道相连 ,当施加一偏压时 ,量子通道分别可作为电子的发射极和收集极 .采用了转移矩阵方法和截断近似技术 .计算结果表明 ,当结构对于 x轴对称时 ,在入射电子的能量小于量子结构的第一个横向本征模时 ,电导存在着两个峰 ;当结构对于 x轴不对称时 ,电导则存在着三个峰 .进一步分析表明 ,这些峰来自于电子共振隧穿量子结构中的量子束缚态 .该结构对于经典粒子来说是非束缚体系 .当结构对于 x轴对称时 ,较高能级是双重简并的 ,而当结构对于 x轴不对称     

Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena

We have defined a quantum point-contact by the split-gate technique in a Si/SiGe heterostructure containing a two-dimensional electron gas with an elastic mean free path of about 1.3 μm. The conductance of this device shows typical steps very close to multiples of 4e² h⁻¹. Upon application of a perpendicular magnetic field the spin and valley degeneracies are lifted and magnetic depopulation of the one-dimensional subbands can be observed. The appearance of Aharonov-Bohm oscillations for B ≥ 2T and of resonant tunneling peaks close to “pinch-off” indicates the presence of impurities close to the constriction.     

Photon-assisted tunneling in coupled double quantum wells

Using different techniques to individually contact two closely spaced electron gases, we study the tunneling characteristics between weakly coupled GaAs quantum wells, with and without resonant far-infrared excitation. We find that for barriers as thick as 300 Å, the alignment between the subbands in the wells can be observed as an increased tunneling conductivity. To study photon-assisted tunneling in our samples, we use the cyclotron resonance as a strong, tunable electronic excitation in the far-infrared. When the Landau-level spacing [hstrok]ω_c corresponds to the laser energy [hstrok]ω_L, the carriers are effectively pumped to higher Landau levels, which leads to a reduced resistance across the tunnel barrier. This photo-conductive signal is “doubly resonant” in that it is at maximum when ω_c coincides with ω_L, and at the same time the subbands of the two wells are aligned.     

室温下高峰谷电流比、高峰电流密度的双势垒共振隧穿二极管

在半绝缘GaAs衬底上制作了AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs双势垒共振隧穿二极管.在GaAs层中加入In0.1Ga0.9As层用以降低势垒两边的势阱深度,从而提高了器件的峰谷电流比和峰电流密度.为了减小器件的接触电阻和电流的非均匀性,使用了独特形状的集电极,总的电流密度也因此提高.薄栅也有助于提高器件的PVCR和峰电流密度.在室温下测得其峰谷电流比高达13.98,峰电流密度大于89kA/cm2.     

A DBRTD with a High PVCR and a Peak Current Density at Room Temperature

AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes(DBRTDs) grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated.By sandwiching the In0.1Ga0.9As layer between GaAs layers,potential wells beside the two sides of barrier are deepened,resulting in an increase of the peak-to-valley current ratio (PVCR) and a peak current density.A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total current density in the device is increased.The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs.The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature.