用离子注入的方法实现InGaAs/InGaAsP激光器材料的量子阱混合

为了在光开关器件的局部区域实现量子阱混合,选用1～2MeV、1×1013～5×1013cm－2的P＋离子注入到InGaAs/InGaAsP分别限制多量子阱（SCH－MQW）激光器结构,在700oC下快速热退火90s。发现光致发光谱的峰值位置发生蓝移9～89nm。蓝移的大小随着注入能量和剂量的增大而增大,并且能量比剂量对蓝移的影响更大。     

一种新型复合加速离子注入动力学研究

提出了一种基于靶台(工件)二次加速的束线离子注入的新方法,基本原理是将传统束线离子注入和等离子体离子注入有效复合。采用二维Particle-in-cell(PIC)模型对这种注入方法进行了数值仿真研究。考察了靶台加负偏压情况下靶台表面空间电势、离子密度变化以及离子的运动状态的时空演化。统计分析了不同时刻离子注入剂量、注入能量和注入角度的分布规律。结果表明:靶台施加偏压对束流离子起到了很好的二次加速效果,束线离子复合加速离子注入这种新方法理论上是切实可行的。同时发现在靶台附近空间电场的作用下,离子束会发生小角度偏转,由柱状形逐渐变成"喇叭口"形,靶台表面有效注入范围扩大。靶台表面注入剂量分布呈中心区域高边缘区域低的趋势。这种新方法有助于减缓电源硬件加工的难度,增加了工艺的灵活性。     

InGaAs／InAlAs多量子阱电吸收光调制器

在国内首次设计并制作了脊波导结构的Ｉｎ０．５３Ｇａ０．４７Ａｓ／Ｉｎ０．５２Ａｌ０．４８Ａｓ多量子阱电吸收型光调制器，并对它的工作特性进行了测试。在３．０Ｖ的驱动电压下实现了２０ｄＢ以上的消光比，光３ｄＢ带宽达到了３ＧＨｚ，对限制光调制器带宽的主要原因进行了分析，结果表明器件电容限制了带宽的提高，这主要是由于ＳｉＯ２刻蚀液的钻蚀导致ＳｉＯ２绝缘层厚度减小造成的。改进制作工艺可望大大改善调制器的工作     

发射极δ掺杂的InGaAs/InPDHBT的特性分析

设计了一种新结构的InGaAs/InP双异质结晶体管(DHBT),其中发射结采用δ掺杂和阻挡层结构,集电极采用N+掺杂复合结结构.考虑隧穿作用和发射结空间电荷区复合电流的影响,计算了δ掺杂浓度和N+、n-层厚度等参数变化对InGaAs/InP DHBT电流、I-V输出特性、电流增益的影响,计算结果表明,随着这些参数值增大,InGaAs/InP DHBT输出特性逐渐改善.当δ掺杂浓度大于2×1012cm-3时,电流增益趋于饱和.     

InGaAs/GaAs异质薄膜的MBE生长研究

利用分子束外延技术,在GaAs(001)基片上外延InGaAs/GaAs异质薄膜,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,确定薄膜中In/Ga的组分比,并提出控制InGaAs薄膜中In/Ga组分比的生长方法.根据RHEED图像,指出获得的InGaAs薄膜处于(2×3)表面重构...     

InP/InGaAsHBT湿法化学选择腐蚀技术

用H3PO4:H2O2系和HCl系腐蚀液实现了InP对InGaAs、InGaAs对InP的湿法化学选择腐蚀,并将其应用于InP/InGaAsHBT制作,发射极面积为10μm×20μm的单管共发射极直流增益β为70,截止频率Ft和最大振荡频率Fmax分别为11GHz和12GHz.     

硅中氮离子注入的研究进展

综述了硅中氮离子注入的应用和研究进展。主要讨论了氮离子注入形成SOI层的原理、质量的影响因素和电学性能;介绍了氮离子注入在制备超薄氧化栅极及其抑制掺杂杂质原子特别是硼原子扩散等方面的研究和应用。     

GaN材料中离子注入的研究进展

综述了ＧａＮ材料中离子注入的研究进展,重点介绍了离子注入技术在ＧａＮ材料中的发光（ＰＬ,ＥＬ,ＣＬ）研究,注入隔离ｐ－ｇａｊｆ／ｎ－型掺杂和深能级缺陷研究中的应用。     

离子注入对氮化硅结构和性能的影响

热压氮化硅陶瓷样品在金属离子注入机上进行高剂量、高束流密度的Ti离子注入。注入剂量为1×1017～3×1018at／cm2。利用卢瑟福背散射（RBS）、扫描俄歇微探针（SAM）、X射线衍射（XRD）、扫描电镜（SEM）等技术对注入层的结构进行了研究。对注入后氨化硅的表面硬度和抗弯强度等力学性能进行了测试分析。结果表明，Ti离子注入对氯化硅性能影响很大，在合适的实验条件下，可以使其力学性能得到较大的改善。     

Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry

InGaAs/InP quantum wells of widths varying from 19 Å to 150 Å have been grown by MOVPE and the growth temperature optimized using photoluminescence and SIMS. It was thus found that for a 78 Å well the lowest PL linewidth of 12.7 meV at 12 K was obtained for growth at 625°C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610°C and 640°C. The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Å/s. However, while the barrier widths of 150 Å were in agreement with SIMS results, the well widths from SIMS were found to be much larger, due to a lower sputtering rate of InGaAs compared with InP. Quantitative comparison was made assuming the presence of InAsP and InGaAsP interface layers on either side of the wells and the relative sputtering rates determined.     

Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching

InP layers and InP/InGaAs structures were grown at 600°C using OMVPE on non-planar wet-etch InP substrates with patterns aligned at various angles Θ within [010] and [01-1] as well as [001] and [0-11]. The patterns were 15-μm-high ordinary mesa-shaped ridges with the sidewall facet angle dependent on the alignment angle Θ. Within 0.5°<Θ<10°, the morphology of InP exhibited ledges running down the slope of the facet, which increased the surface roughness. For larger angles Θ, it exhibited different features. The nucleation of InGaAs proceeded through faceted trapezoidal features. This type of nucleation was not suppressed on the facets for 0.5°<Θ<10°. For larger Θ, the InGaAs morphology exhibited different features.     

InP 层对正面及背面入光 PIN 探测器响应度影响研究

InP盖层对光的吸收及入射光在探测器多界面间的多次反射,使InP层对InGaAs/InPPIN探测器的响应度产生了很大的影响。本文测量了正面和背面入光PIN探测器的响应度,并与测量的InP晶片透射率及模拟的透射率进行比较,分析了InP层对正面及背面入光PIN探测器响应度的影响。结果表明,随着InP层厚度的增加,响应度峰与峰的间隔Δλ不断减小,波形越来越密集。所以正面入光探测器的响应度起伏比较明显,且随着InP层厚度的增加,响应度极值对应的波长发生红移。背面入光探测器的响应度非常密集而成为准连续的带状。     

Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions

The sequential tunneling behavior in InP/InGaAs superlattice-emitter bipolar transistors is demonstrated by theoretical analysis and experimental results. The tunneling mechanism in the InP/InGaAs superlattice structures is analyzed by theoretical calculation. Due to the weak coupled tunneling mechanism, the interesting multiple negative-differential-resistances (NDRs) resulting from the creation and extension of high-field domain in the superlattice are observed at room temperature. Experimentally, the transistor performances, including a high current gain of 454, a low collector–emitter offset voltage of 80 mV, and a pronounced multiple NDRs, are achieved. The proposed structures may provide good potential for signal amplifiers and multiple-valued logic circuit applications.     

A model for diffusion of beryllium in InGaAs/InP heterostructures

This study reports on Be diffusion from a Be-doped (3×10¹⁹ cm⁻³) In_0.53Ga_0.47As layer sandwiched between undoped InP layers grown by gas source molecular beam epitaxy. To explain the obtained experimental depth profiles, a kick-out model of substitutional interstitial diffusion mechanism, involving neutral Be interstitials for the InGaAs epilayer and singly positively charged Be interstitials for the InP epilayers, is proposed. Using the boundary conditions at the heterojunctions and taking into account the built-in electric field, Fermi level and bulk self-interstitial generation/annihilation effects, we obtained a good agreement between the simulated and experimental data.     

Ion implantation techniques for non-electronic applications

Ion implantation techniques have been used to improve surface properties for over more than four decades. Metallurgical application of ion beam techniques was first reported in the 70s by Harwell laboratory (UK), and by the Naval Research Laboratory (USA), mainly focused to nitrogen implantation of steels. From those first results to today ion implantation techniques have been introduced in many different applications for industrial sectors such as the aeronautical and biomedical.This paper presents some of the most important actual applications of ion implantation techniques. Different strategies of conventional Ion Implantation (II), Low energy-High Temperature Ion Implantation (LEHT), and Plasma Immersion Ion Implantation (PIII) are studied and compared in terms of modified surface properties and industrial application niches.Furthermore, the reported results show how these different treatments have a big potential for research in smart and nano-functional surfaces in applications including biomaterials and many other specific developments.