旋转矢量法结合最大值法校准宽角相控阵天线

介绍了相控阵天线的远场校准方法——旋转矢量法,利用HFSS仿真软件对4×4元相控阵天线扫描角为0°状态进行校准仿真,效果优良;在宽角校准时,采用旋转矢量法结合最大值法进行校准,用CST仿真软件结合该方法进行仿真,效果良好;最后进行试验测试,对4×4元相控阵天线在两维宽角范围内进行校准。结果证明该方法能有效校准小阵面宽角扫描相控阵天线。     

基于旋转矢量法的有源相控阵天线中场测量

中场测量技术所需设备量较少,成本较低,而旋转矢量法利用相控阵天线本身的波控系统测量阵面的幅相分布。两种测量各有优缺点,将这两种方法结合起来,可实现对有源相控阵天线的TR组件监测和相控阵天线的阵面幅相测量。与近场测量相比,该方法简单易行,可以实现有源相控阵天线的定期监测和校正,同时,对测量中的误差进行了分析,并提出了解决办法。     

天线正交加权改变天线方向图方法及其应用

指出了目前改变天线方向特性存在的问题和困难;在研究环形天线方向特性的基础上,提出了一种能够快速旋转天线方向图的新方法,即天线正交加权法.该方法可在天线不便旋转或不能旋转的情况下,通过对天线接收的信号进行加权处理控制天线方向图的旋转,达到天线方向图快速改变的目的.最后对该方法的推广应用进行了探讨.该方法具有可靠性高、精确...     

大型固定式有源相控阵天线系统性能测试技术

文献[1～6]对相控阵天线校正与测试技术进行了讨论。文中将给出大型固定式有源相控阵天线系统性能测试技术，在整个测量过程中，利用有源相控阵的系统资源和旋转矢量法对阵面性能进行测试，给出了测试结果并进行了比较，理论分析和实验结果表明该方法在实际工程应用中具有重大的实用价值。     

阵列天线因随机振动引起的测向误差分析及校准

针对阵列天线受舰船甲板低频机械随机振动引发振子位移变化导致的测向误差问题,建立了天线振子随机振动误差模型,仿真分析了天线阵列3个轴向随机振动模式对测角接收信号的影响,提出了一种基于多个接收机在不同位置同时测量的测角误差校正方法.该方法采用最小二乘法得到多个误差校准矢量,通过调用天线波束指向扇区内校准矢量的方法进行误差补偿,解决了低频随机振动模式下阵列天线测角误差的校准问题.该方法已应用到舰载微波着舰引导系统数据解算中.     

多输入多输出雷达发射阵列误差联合校正方法

针对多输入多输出雷达发射阵列提出了一种同时校正阵元位置误差、幅相误差和阵元互耦的新方法.该方法首先通过多次旋转天线阵列进行采样,获得来自多个方位的实验数据,然后对数据的协方差矩阵进行特征分解,得到实际阵列流型的估计值并构造代价函数,最后通过迭代算法估计所有的误差参数,并对误差进行校正.计算机仿真及实际天线阵列的校正实验均验证了该方法的有效性.     

有源相控阵天线的近场校准

为实现对相控阵天线的校准,降低幅相误差和阵元失效对天线性能的影响,提出了一种考虑互耦效应的近场校准方法。在利用近场扫描法完成逐一通道校准的基础上,使用旋转矢量法进行二次校准。在应用旋转矢量法（ REV)时,为使被测信号的变化明显,将大规模相控阵天线分为中间、边缘区域进行分区校准。通过二次校准可判定阵元是否失效,提高相控阵天线的幅相一致性;通过分区校准减小阵元间互耦的影响,缩短校准时间。仿真结果表明：此方法用于大型相控阵的校准具有较高的准确性,可改善校准结果。     

航姿系统矢量场传感器的完全校正

三轴磁强计与三轴加速度计是航姿系统中必不可少的矢量场传感器,其误差校正常采用基于椭球拟合的方法。该方法不能补偿传感器坐标系与载体坐标系间的非对准误差。传感器绕固定转轴旋转时,地磁矢量及重力矢量在转轴上的投影均为常数,利用该性质可克服椭球拟合法的上述缺点,从而实现磁强计与加速度计的完全校正。实验表明,改进的校正方法可使校正后航姿误差减小到1°以内,且操作简单,便于实现航姿系统的现场校正。     

基于单次快拍的自适应天线阵互耦效应分析与校正

本文基于天线阵列的单次快拍数据,分析和校正了自适应天线的单元互耦效应.文中首先阐述了基于单次快拍数据的信号处理方法,介绍了构造权矢量法方程的方法,给出了系统恢复期望信号的表达式和形成自适应方向图的公式.采用矩量法互耦分析模型和"前向"方法,分析互耦对系统性能的影响.提出校正互耦的方法,给出了具体的计算方法和简洁的表达式.最后分别模拟了在强、弱干扰的环境下,互耦对系统分辨率和输出方向图的影响,并验证了本文方法校正互耦的效果.     

“北斗”信号重构的导向矢量实时校正

针对导航应用中阵列天线导向矢量误差导致波束合成器性能恶化甚至失效的问题,提出了一种“北斗”信号重构的导向矢量实时校正算法。该算法利用重构的本地“北斗”参考信号与阵列天线接收信号进行相关解扩处理,然后利用信号子空间与信号正交补空间正交的特性,构造代价函数对各卫星方向的阵列导向矢量进行校正。仿真结果表明,经过校正的导向矢量相位误差从-100°~100°降低到-10°~10°范围内,幅度误差从-10~10 dB降低到-4~2 dB范围内;另外,导向矢量校正后,卫星信号波达方向估计误差在0.2°以内,估计精度大大提高。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.