氢气流量对类金刚石薄膜结构与性能的影响

采用直流/射频耦合反应磁控溅射法在Si（100）衬底上成功制备出类金刚石（DLC）薄膜。利用表面轮廓仪、Raman光谱仪、X射线光电子能谱仪表征所制备薄膜在不同氢气流量下的沉积速率和化学结构,讨论了氢气流量对薄膜沉积速率和化学结构的影响;利用纳米压痕技术及曲率弯曲法表征薄膜的力学性能;利用扫描电镜和原子力显微镜表征薄膜的表面形貌与粗糙度。研究表明：随着氢气流量的增加,所制备薄膜的沉积速率逐渐减小,而薄膜中sp³键的含量逐渐增大。当氢气流量为25 mL/min时,薄膜中sp³键的含量为36.3%,薄膜的硬度和体弹性模量分别达到最大值17.5 GPa和137 GPa。同时,所制备薄膜的内应力均低于0.5 GPa,有望成功制备出低内应力的高质量DLC厚膜。随着氢气流量的增加,DLC薄膜的表面变得更致密光滑,且表面均方根粗糙度由5.40 nm降为1.46 nm。     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

脉冲负偏压对沉积类金刚石薄膜结构和摩擦性能的影响

在不同的基台脉冲负偏压下,利用微波-ECR等离子体化学气相沉积技术在单晶硅表面制备了类金刚石薄膜,利用傅立叶变换红外吸收光谱和原子力显微镜对薄膜的结构和形貌进行了表征,最后对薄膜的摩擦系数进行了测试.结果表明:制备的薄膜具有典型的含H类金刚石结构特征,薄膜致密均匀,表面粗糙度很小.随着负偏压的增大,红外光谱中2800-3000 cm-1波段的C-H伸缩振动吸收峰的强度先升高后降低,并在负偏压为200 V时达到最大;薄膜的摩擦系数而是先降低再升高,在负偏压为200 V时达到最小.     

纳米晶钛薄膜的制备及结构分析

采用磁控溅射和离子镀膜工艺在Mo基片上制备了具有不同晶粒尺寸的纯Ti薄膜,并利用X光衍射(XRD)、透射电镜(TEM)和扫描电镜(SEM)分析和观察了两类Ti膜的结构和形貌.实验结果显示:与溅射镀膜相比,离子镀膜的晶粒择优取向程度略低,Ti膜与基片结合较好;较高的基片温度有利于提高膜的致密程度,并降低膜的晶粒择优取向程序.     

纳米晶钛薄膜的制备及结构分析

采用磁控溅射和离子镀膜工艺在Mo基片上制备了具有不同晶粒尺寸的纯Ti薄膜，并利用X光衍射（XRD）、透射电镜（TEM）和扫描电镜（SEM）分析和观察了两类Ti膜的结构和形貌。实验结果显示：与溅射镀膜相比，离子镀膜的晶粒择优取向程度略低，Ti膜与基片结合较好；较高的基片温度有利于提高膜的致密程度，并降低膜的晶粒择优取向程序。     

类金刚石薄膜的同步辐射光电子能谱研究

利用同步辐射光电子能谱全电子产额模式(TEY)对石墨、金刚石薄膜和类金刚石薄膜(DLC)的ClsX射线吸收谱进行了研究。在高真空里表面净化处理后,在类金刚石薄膜的Cls吸收谱中分别观察到对应于金刚石sp^3杂化结构成分和石墨sp^2杂化结构成分的特征峰,说明了类金刚石薄膜是由碳sp^2、sp^3两种杂化结构无序混合形成的非晶碳结构;然后,测量了一系列类金刚石薄膜样品的ClsX射线光电子能谱(XPS),得到了每组样品的sp^2、sp^3成分比。     

感应耦合等离子体源制备硬质类金刚石膜的研究

采用感应耦合等离子体源 (ICPS)成功地实现了化学气相沉积硬质类金刚石 (DLC)膜 ,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜 ,并且在相对较低的基片负偏压条件下就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。     

感应耦合等离子体源制备硬质类金刚石膜的研究

采用感应耦合等离子体源(ICPS)成功地实现化学气相沉积硬质类金刚石(DLC)膜,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜,并且在相对较低的基片负偏压条件就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。     

直流磁控溅射钛及钛合金薄膜的性能研究

用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。     

Structure and Tribology Property of Carbon Nitride Films Deposited by MW-ECR Plasma Enhanced Unbalanced Magnetron Sputtering

Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance （ECR） plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties.     

Fabrication of Diamond Microstructures by Using Dry and Wet Etching Methods

Diamond films have great potential for micro-electro-mechanical system(MEMS) application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching(including isotropic-etching and anisotropic-etching) have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.     

金属铀表面非平衡磁控溅射CrNx薄膜的XPS分析与腐蚀性能

金属铀的化学性质十分活泼,极易发生氧化腐蚀。为改善基体的抗腐蚀性能,采用非平衡磁控溅射离子镀技术在金属铀表面制备CrN_x薄膜。采用X射线衍射和X射线光电子能谱研究薄膜表面的物相结构和元素成分分布,采用极化曲线研究薄膜的抗腐蚀性能。结果表明,CrN_x薄膜具有较好的致密性和抗腐蚀性能。当氮分压较小时,生成的薄膜为Cr+CrN+Cr₂N混合相。在金属铀表面制备1层CrN_x薄膜后,其腐蚀电位增大约465 mV,腐蚀电流密度明显降低,有效改善了贫铀表面的抗腐蚀性能。     

Effect of N2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering

Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.     

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

He-charged oxide dispersion strengthened(ODS)FeCrNi films were prepared by a radiofrequency(RF)plasma magnetron sputtering method in a He and Ar mixed atmosphere at150℃.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current(DC)plasma magnetron sputtering.The doping of He atoms and Y_2O_3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y_2O_3/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma(ICP)and x-ray photoelectron spectroscopy(XPS)analysis confirmed the existence of Y_2O_3 in FeCrNi films,and Y_2O_3 content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy(SEM)shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y_2O_3 apparently increased the hardness of the films.Elastic recoil detection(ERD)showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts(~17 at.%).Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered films.The Y_2O_3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y_2O_3 and the inhibition effect of nano-sized Y_2O_3 particles on the He element.     

Synthesis and Characteristics of Diamond-like Carbon Films Deposited on Quartz Substrate

Diamond-like carbon (DLC) fihns are deposited on quartz substrate using pure CH4 in the surface wave plasma equipment. A direct current negative bias up to -90 V is applied to the substrate to investigate the bias effect on the film characteristics. Deposited films are characterized by Raman spectroscopy, infrared (IR) and ultraviolet-visible absorption techniques. There are two broad Raman peaks around 1340 cm^-1 and 1600 cm^-1 and the first one has a greater sp^3 component with an increased bias. Infrared spectroscopy has three sp^3 C-H modes at 2852 cm^-1, 2926 cm^-1 and 2962 cm^-1, respectively and also shows an intensity increase with the negative bias. Optical band gap is calculated from the ultraviolet-visible absorption spectroscopy and the increased values with negative bias and deposition time are obtained. After a thermal anneal at about 500℃ for an hour to the film deposited under the bias of-90 V, we get an almost unchanged Raman spectrum and a peak intensity-reduced IR signal, which indicates a reduced H-content in the film. Meanwhile the optical band gap changed from 0.85 eV to 1.5 eV.     

Development of Thin Film Thermometer and Its Application to Radiation Loss Measurement in JFT-2 Tokamak

A thin film thermometer with high sensitivity and small response time has been developed. A nickel film was deposited in a vacuum on a backing plate of stainless steel 0.05 mm thick. The pattern of nickel film was so designed to provide sufficient accuracy. A small heat flux of 0.5 W/cm² is measurable with a response time of less than 1 ms. The thermometer was applied to radiation loss measurement in JFT-2 tokamak. The power loss due to the radiation was found to be about 30% of the total power input.