21.41%-Efficiency CsPbI3 Perovskite Solar Cells Enabled by an Effective Redox Strategy with 4-Fluorobenzothiohydrazide in Precursor Solution

To simultaneously stabilize cesium lead triiodide (CsPbI₃) precursor solution and passivate the defects in CsPbI₃ film is greatly significant for achieving highly stable and efficient CsPbI₃ perovskite solar cells (PSCs). Herein, an effective redox 4-fluorobenzothiohydrazide (FBTH) is developed to stabilize the precursor solution and passivate iodine/lead-related defects for high-quality CsPbI₃ film. The comprehensive research confirms that 1) a new compound FBTH-I is obtained from an effective redox interaction between FBTH and molecular iodine (I₂) in perovskite precursor solution, which can effectively impede the formation of I₂ molecule and restrain I⁻ migration in perovskite film by forming N–H···I bond; 2) FBTH-I can also passivate Pb-related defects via forming S···Pb interaction. Consequently, the CsPbI₃ PSC based on FBTH-treated precursor solution exhibits a fascinating power conversion efficiency (PCE) of 21.41%, which is one of the highest PCE values among the reported pure CsPbI₃ PSCs so far, and an outstanding stability against the harsh conditions, such as thermal annealing and continuous light-illumination.     

Controlled n‐Doping in Air‐Stable CsPbI2Br Perovskite Solar Cells with a Record Efficiency of 16.79%

Cesium‐based inorganic perovskites, such as CsPbI₂Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI₂Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI₃ PSCs. In this work, passivation and n‐type doping by adding CaCl₂ to CsPbI₂Br is demonstrated. The crystallinity of the CsPbI₂Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl₂. In addition, the Fermi level of the CsPbI₂Br is changed by the added CaCl₂ to show heavy n‐type doping. As a result, the optimized CsPbI₂Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI₂Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.     

Inorganic Ammonium Halide Additive Strategy for Highly Efficient and Stable CsPbI3 Perovskite Solar Cells

All-inorganic perovskite cesium lead iodide (CsPbI₃) exhibits excellent prospects for commercial application as a light absorber in single-junction or tandem solar cells due to its outstanding thermal stability and proper bandgap. However, the device performance of CsPbI₃-based perovskite solar cells (PSCs) is still restricted by the unsatisfactory crystal quality and severe non-radiative recombination. Herein, inorganic additive ammonium halides are introduced into the precursor solution to regulate the nucleation and crystallization of the CsPbI₃ film by exploiting the atomic interaction between the ammonium group and the Pb–I framework. The grain boundaries and interfacial contact of the CsPbI₃ film have been improved, which leads to significant suppression in the non-radiative recombination and an enhancement in the charge transport ability. With these benefits, a high efficiency of 18.7% together with an extraordinarily high fill factor of 0.83–0.84 has been achieved, comparable to the highest records reported so far. Moreover, the cell exhibits ultra-high photoelectrical stability under continuous light illumination and high bias voltage with 96% of its initial power-conversion efficiency being sustained after 2000 h operation, even superior to the world-champion CsPbI₃ solar cell. The findings are promising for the development and application of all-inorganic PSCs using a simple inorganic additive strategy.     

Precursor Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with 14.78% Efficiency

The optoelectronic properties of perovskite films are closely related to the film quality, so depositing dense, uniform, and stable perovskite films is crucial for fabricating high‐performance perovskite solar cells (PSCs). CsPbI₂Br perovskite, prized for its superb stability toward light soaking and thermal aging, has received a great deal of attention recently. However, the air instability and poor performance of CsPbI₂Br PSCs are hindering its further progress. Here, an approach is reported for depositing high‐quality CsPbI₂Br films via the Lewis base adducts PbI₂(DMSO) and PbBr₂(DMSO) as precursors to slow the crystallization of the perovskite film. This process produces CsPbI₂Br films with large‐scale crystalline grains, flat surfaces, low defects, and long carrier lifetimes. More interestingly, PbI₂(DMSO) and PbBr₂(DMSO) adducts could significantly improve the stability of CsPbI₂Br films in air. Using films prepared by this technique, a power conversion efficiency (PCE) of 14.78% is obtained in CsPbI₂Br PSCs, which is the highest PCE value reported for CsPbI₂Br‐based PSCs to date. In addition, the PSCs based on DMSO adducts show an extended operational lifetime in air. These excellent performances indicate that preparing high‐quality inorganic perovskite films by using DMSO adducts will be a potential method for improving the performance of other inorganic PSCs.     

In-Situ Hot Oxygen Cleansing and Passivation for All-Inorganic Perovskite Solar Cells Deposited in Ambient to Breakthrough 19% Efficiency

All-inorganic perovskite CsPbI₃ has attracted extensive attention recently because of its excellent thermal and chemical stability. However, its photovoltaic performance is hindered by large energy losses (E_loss) due to the presence of point defects. In addition, hydroiodic acid (HI) is currently employed as a hydrolysis-derived precursor of intermediate compounds, which often leads to a small amount of organic residue, thus undermining its chemical stability. Herein, an in-situ hot oxygen cleansing with superior passivation (HOCP) for the triple halide-mixed CsPb(I_2.85Br_0.149Cl_0.001) perovskite solar cells (abbreviated as CsPbTh₃) deposited in an ambient atmosphere to reduce the E_loss to as low as 0.48 eV for the power conversion efficiency (PCE) to reach 19.65% is demonstrated. It is found that the hot oxygen treatment effectively removes the organic residues. Meanwhile, it passivates halide vacancies, hence reduces the trap states and nonradiative recombination losses within the perovskite layer. As a result, the PCE is increased significantly from 17.15% to 19.65% under 1 sun illumination with an open-circuit voltage enlarged to 1.23 from 1.14 V, which corresponds to an E_loss reduction from 0.57 to 0.48 eV. Also, the HOCP-treated devices exhibit better long-term stability. This insight should pave a way for decreasing nonradiative charge recombination losses for high-performance inorganic perovskite photoelectronics.     

Modification of Energy Level Alignment for Boosting Carbon-Based CsPbI2Br Solar Cells with 14% Certified Efficiency

Hole transfer material (HTM)-free, carbon-based all-inorganic perovskite solar cells (C-PSCs) are promising alternatives to conventional organic–inorganic hybrid PSCs in addressing thermal and moisture instability issues. However, the energy level mismatch between the inorganic perovskite and carbon electrode coupled, together with the incapability of the carbon electrode to reflect incident light for reabsorption, limits the power conversion efficiency (PCE) of C-PSCs. To address these issues, herein, a new strategy of a hexyltrimethylammonium bromide (HTAB)-modified CsPbI₂Br perovskite surface is devised to reduce this energy offset from 0.70 to 0.32 eV and increase the built-in potential by 70 mV for the final devices. Additionally, a CsPbI₂Br perovskite film with a thickness of up to 800 nm is realized via a hot-flow-assisted spin coating approach in an ambient atmosphere with humidity of less than 80%. Reduced energy offset coupled with suppressed charge recombination and thick perovskite layer boosts the champion PCE of CsPbI₂Br C-PSCs to 14.3% (J_sc = 14.1 mA cm⁻², V_oc = 1.26 V, and fill factor = 0.806), and the average PCE to 13.9% under one sun illumination. A new certified efficiency record of 14.0% is obtained for HTM-free inorganic C-PSCs. Meanwhile, the moisture-resistant barrier from the alkyl chain in HTAB improves the stability of the final devices.     

Hybrid Perovskite Quantum Dot/Non-Fullerene Molecule Solar Cells with Efficiency Over 15%

Organic-inorganic hybrid film using conjugated materials and quantum dots (QDs) are of great interest for solution-processed optoelectronic devices, including photovoltaics (PVs). However, it is still challenging to fabricate conductive hybrid films to maximize their PV performance. Herein, for the first time, superior PV performance of hybrid solar cells consisting of CsPbI₃ perovskite QDs and Y6 series non-fullerene molecules is demonstrated and further highlights their importance on hybrid device design. In specific, a hybrid active layer is developed using CsPbI₃ QDs and non-fullerene molecules, enabling a type-II energy alignment for efficient charge transfer and extraction. Additionally, the non-fullerene molecules can well passivate the QDs, reducing surface defects and energetic disorder. The champion CsPbI₃ QD/Y6-F hybrid device has a record-high efficiency of 15.05% for QD/organic hybrid PV devices, paving a new way to construct solution-processable hybrid film for efficient optoelectronic devices.     

All-Inorganic CsPbI3 Quantum Dot Solar Cells with Efficiency over 16% by Defect Control

All-inorganic CsPbI₃ quantum dots (QDs) have shown great potential in photovoltaic applications. However, their performance has been limited by defects and phase stability. Herein, an anion/cation synergy strategy to improve the structural stability of CsPbI₃ QDs and reduce the pivotal iodine vacancy (V_I) defect states is proposed. The Zn-doped CsPbI₃ (Zn:CsPbI₃) QDs have been successfully synthesized employing ZnI₂ as the dopant to provide Zn²⁺ and extra I⁻. Theoretical calculations and experimental results demonstrate that the Zn:CsPbI₃ QDs show better thermodynamic stability and higher photoluminescence quantum yield (PLQY) compared to the pristine CsPbI₃ QDs. The doping of Zn in CsPbI₃ QDs increases the formation energy and Goldschmidt tolerance factor, thereby improving the thermodynamic stability. The additional I⁻ helps to reduce the V_I defects during the synthesis of CsPbI₃ QDs, resulting in the higher PLQY. More importantly, the synergistic effect of Zn²⁺ and I⁻ in CsPbI₃ QDs can prevent the iodine loss during the fabrication of CsPbI₃ QD film, inhibiting the formation of new V_I defect states in the construction of solar cells. Consequently, the anion/cation synergy strategy affords the CsPbI₃ quantum dot solar cells (QDSC) a power conversion efficiency over 16%, which is among the best efficiencies for perovskite QDSCs.     

δ‐CsPbI3 Intermediate Phase Growth Assisted Sequential Deposition Boosts Stable and High‐Efficiency Triple Cation Perovskite Solar Cells

Cs/FA/MA triple cation perovskite films have been well developed in the antisolvent dripping method, attributable to its outstanding photovoltaic and stability performances. However, a facile and effective strategy is still lacking for fabricating high‐quality large‐grain triple cation perovskite films via sequential deposition method a, which is one of the key technologies for high efficiency perovskite solar cells. To address this issue, a δ‐CsPbI₃ intermediate phase growth (CsPbI₃‐IPG) assisted sequential deposition method is demonstrated for the first time. The approach not only achieves incorporation of controllable cesium into (FAPbI₃)_1–x(MAPbBr₃)_x perovskite, but also enlarges the perovskite grains, manipulates the crystallization, modulates the bandgap, and improves the stability of final perovskite films. The photovoltaic performances of the devices based on these Cs/FA/MA perovskite films with various amounts of the δ‐CsPbI₃ intermediate phase are investigated systematically. Benefiting from moderate cesium incorporation and intermediate phase‐assisted grain growth, the optimized Cs/FA/MA perovskite solar cells exhibit a significantly improved power conversion efficiency and operational stability of unencapsulated devices. This facile strategy provides new insights into the compositional engineering of triple or quadruple cation perovskite materials with enlarged grains and superior stability via a sequential deposition method.     

Surface Passivation with Diaminopropane Dihydroiodide for p-i-n Perovskite Solar Cells with Over 25% Efficiency

At present, one of the major factors limiting the further improvement of inverted (p-i-n) perovskite solar cells (PSCs) is trap-assisted non-radiative recombination at the perovskite/electron transporting layer (ETL) interface. Surface passivation with organic ammonium salt is a powerful strategy to improve the performance of PSCs. Herein, an effective method by using propylamine hydroiodide (PAI) and 1,3-diaminopropane dihydroiodide (PDADI) is reported to modify the perovskite/ETL interface. These two ammonium salts do not form new perovskite but directly passivate the defects on the perovskite surface after annealing. The results show that the PDADI-modified perovskite films possess a lower surface defect density and less non-radiative recombination as well as improved charge carrier transport. Based on this strategy, the PDADI-modified p-i-n PSCs deliver an impressive efficiency of 25.09% (certified 24.58%) with an open-circuit voltage of 1.184 V. Furthermore, the unencapsulated PDADI-modified PSCs also exhibit good storage stability, retaining 91% of initial PCE at 65 °C in a N₂ glove box for 1300 h. This strategy provides an efficient route to fabricate highly efficient and stable inverted p-i-n structured PSCs.     

Interface Dipole Induced Field-Effect Passivation for Achieving 21.7% Efficiency and Stable Perovskite Solar Cells

Organolead halide hybrid perovskite solar cells (PSCs) have become a shining star in the renewable devices field due to the sharp growth of power conversion efficiency; however, interfacial recombination and carrier-extraction losses at heterointerfaces between the perovskite active layer and the carrier transport layers remain the two main obstacles to further improve the power conversion efficiency. Here, novel field-effect passivation has been successfully induced to effectively suppress the interfacial recombination and improve interfacial charge transfer by incorporating interfacial polarization via inserting a high work function interlayer between perovskite and holes transport layer. The charge dynamics within the device and the mechanism of the field-effect passivation are elucidated in detail. The unique interfacial dipoles reinforce the built-in field and prevent the photogenerated charges from recombining, resulting in power conversion efficiency up to 21.7% with negligible hysteresis. Furthermore, the hydrophobic interlayer also suppresses the perovskite decomposition by preventing the moisture penetration, thereby improving the humidity stability of the PSCs (>91% of the initial power conversion efficiency (PCE) after 30 d in 65 ± 5% humidity). Finally, several promising research perspectives based on field-effect passivation are also suggested for further conversion efficiency improvements and photovoltaic applications.     

Dopant-Free Polymer HTM-Based CsPbI2Br Solar Cells with Efficiency Over 17% in Sunlight and 34% in Indoor Light

To abate the issue of moisture-assisted phase transition of CsPbI₂Br, caused by hygroscopic dopants used in the hole-transporting material (HTM), developing dopant-free HTMs is necessary. In this work, a new polymer, PDTDT, is developed as a dopant-free HTM for CsPbI₂Br solar cells, and the device performance and stability are systematically compared with cells employing dopant-free P3HT. CsPbI₂Br solar cells using PDTDT show an efficiency of 17.36% with V_OC of 1.42 V and FF of 81.29%, which is one of the highest values for CsPbI₂Br cells. Moreover, a record-high efficiency of 34.20% with V_OC of 1.14 V under 200 lux indoor light illumination and efficiency of 14.54% (certified efficiency of 13.86%) for a 1 cm² device under one sun are accomplished. Importantly, PDTDT shows superior/comparable device stability to P3HT, promising its potential to be an alternative to popular doped Spiro-OMeTAD and P3HT HTM.     

Stabilizing Bottom Side of Perovskite via Preburying Cesium Formate toward Efficient and Stable Solar Cells

The fragile bottom side of perovskite films is demonstrated to be harmful to the efficiency and stability of perovskite solar cells (PSCs) because the carrier extraction and recombination can be significantly influenced by the easily formed strain, voids, and defects on the bottom side. Nevertheless, the bottom side of perovskite films is usually overlooked because it remains a challenge to directly characterize and modify the bottom side. Herein, a facile and effective strategy is reported to stabilize the bottom side via preburying cesium formate (CsFo) into the SnO₂ electron transport layer (ETL). It is found that the synergistic effect of cesium cation (Cs⁺) and formate anion (HCOO⁻) causes strain relaxation, void elimination, and defects’ reduction, which further facilitate the charge extraction. Consequently, the champion power conversion efficiency (PCE) of formamidinium (FA)-based PSCs is increased from 23.34% to 24.50%. Meanwhile, the ultraviolet (UV), thermal, and operational stability are also enhanced. Finally, formamidinium–cesium (FACs)-based PSCs are investigated to confirm the effectiveness of this preburied CsFo strategy, and the optimal device exhibits a champion PCE of 25.03% and a remarkably high fill factor (FF) of 85.65%.     

Spidermen Strategy for Stable 24% Efficiency Perovskite Solar Cells

The interface energetics-modification plays an important role in improving the power conversion efficiency (PCE) among the perovskite solar cells (PSCs). Considering the low carrier mobility caused by defects in PSCs, a double-layer modification engineering strategy is adopted to introduce the “spiderman” NOBF₄ (nitrosonium tetrafluoroborate) between tin dioxide (SnO₂ and perovskite layers. NO⁺, as the interfacial bonding layer, can passivate the oxygen vacancy in SnO₂, while BF₄⁻ can optimize the defects in the bulk of perovskite. This conclusion is confirmed by theoretical calculation and transmission electron microscopy (TEM). The synergistic effect of NO⁺ and BF₄⁻ distinctly heightens the carrier extraction efficiency, and the PCE of PSCs is 24.04% with a fill factor (FF) of 82.98% and long-term stability. This study underlines the effectiveness of multifunctional additives in improving interface contact and enhancing PCE of PSCs.     

Efficient Cesium Lead Halide Perovskite Solar Cells through Alternative Thousand‐Layer Rapid Deposition

The novel growth of cesium lead halide perovskite thin films, which are prepared through thousand‐layer rapid alternative deposition, is performed by developing an active perovskite film consisting of a layer‐by‐layer structure. This method is considerably more difficult to be implemented from the solution process. The obtained thin film morphology and characteristics are distinguished from that of the traditional a few layers and two‐material codeposition. These alternative deposited perovskites are integrated with vacuum‐deposited carrier‐transporting layers and electrodes, and all vacuum‐sublimed perovskite solar cells exhibit an outstanding power conversion efficiency of 13.0%. The use of these devices for environmental light energy harvesting provides a power conversion efficiency of 33.9% under fluorescent light illumination of 1000 lux.     

Fluorinated Pentafulvalene-Fused Hole-Transporting Material Enhances the Performance of Perovskite Solar Cells with Efficiency Exceeding 23%

Organic small molecular materials with coplanar π-conjugated system as HTMs in perovskite solar cells (PSCs) have attracted considerable attention due to their high charge transport capability and thermal stability. Herein, three novel pentafulvalene-fused derivatives with or without fluorine atoms incorporated ( YSH-oF and YSH-mF and YSH-H , respectively) are designed, synthesized, and applied as hole-transporting materials (HTMs) in PSCs fabrication. The fluorinated HTMs, YSH-oF and YSH-mF , exhibited higher hole mobility and better charge extraction at the perovskite/HTM interface than non-fluorinated one do, presumably due to the closer intermolecular π–π packing interactions. As a result, small-area (0.09 cm²) PSCs made with YSH-oF and YSH-mF achieved an impressive power conversion efficiency (PCE) of 23.59% and 22.76% respectively, with negligible hysteresis, in contrast with the 20.57% for the YSH-H -based devices. Furthermore, for large-area (1.00 cm²) devices, the PSCs employing YSH-oF exhibited a PCE of 21.92%. Moreover, excellent long-term device stability is demonstrated for PSCs with F-substituted HTMs ( YSH-oF and YSH-mF ), presumably due to the higher hydrophobicity. This study shows the great potential of fluorinated pentafulvalene-fused materials as low-cost HTM for efficient and stable PSCs.     

Illumination Enhanced Crystallization and Defect Passivation for High Performance CsPbI3 Perovskite Solar Cells by Sacrificing Dye

All-inorganic perovskite solar cells (PSCs) have been the research focus due to their high thermal stability and proper band gap for tandem solar cells. However, their power conversion efficiency (PCE) is still lower than that of organic-inorganic hybrid PSCs. Herein, a sacrificing dye (Rhodamine B isothiocyanate, RBITC) is developed to regulate the growth of perovskite film by in situ release of ethylammonium cations, isothiocyanate anions and benzoic acid molecules upon annealing and illumination. The ethylammonium cations can efficiently passivate surface defects. The isothiocyanate anions incorporate with uncoordinated Pb to regulate the crystallization process. The benzoic acid molecules facilitate the nucleation of the perovskite crystals. Especially, the illumination can accelerate the release of these beneficial ions/molecules to improve the quality of perovskite films further. After optimization with RBITC, a high open circuit voltage (V_OC) of 1.24 V and a champion PCE of 20.95% are obtained, which are among the highest Voc and PCE values of CsPbI₃ PSCs. Accordingly, the operational stability of the PSC devices is significantly improved. The results provide an efficient chemical strategy to regulate the formation of perovskite films in whole crystallization process for high performance all-inorganic PSCs.     

Hydrothermally Treated SnO2 as the Electron Transport Layer in High‐Efficiency Flexible Perovskite Solar Cells with a Certificated Efficiency of 17.3%

Perovskite solar cells (PSCs) are one of the most promising solar energy conversion technologies owing to their rapidly developing power conversion efficiency (PCE). Low‐temperature solution processing of the perovskite layer enables the fabrication of flexible devices. However, their application has been greatly hindered due to the lack of strategies to fabricate high‐quality electron transport layers (ETLs) at the low temperatures (≈100 °C) that most flexible plastic substrates can withstand, leading to poor performances for flexible PSCs. In this work, through combining the spin‐coating process with a hydrothermal treatment method, ligand‐free and highly crystalline SnO₂ ETLs are successfully fabricated at low temperature. The flexible PSCs based on this SnO₂ ETL exhibit an excellent PCE of 18.1% (certified 17.3%). The flexible PSCs maintained 85% of the initial PCE after 1000 bending cycles and over 90% of the initial PCE after being stored in ambient air for 30 days without encapsulation. The investigation reveals that hydrothermal treatment not only promotes the complete removal of organic surfactants coated onto the surface of the SnO₂ nanoparticles by hot water vapor but also enhances crystallization through the high vapor pressure of water, leading to the formation of high‐quality SnO₂ ETLs.     

Integrated Quasi-2D Perovskite/Organic Solar Cells with Efficiency over 19% Promoted by Interface Passivation

Integrated perovskite/organic solar cells (IPOSCs) have shown great potential in broadening the light absorption range and improving the photovoltaic performance. However, the severe interface charge recombination and unmatched energy levels between perovskite and organic photoactive layers hinder their performance improvement. Here, an efficient interface passivation strategy for IPOSCs based on a layered Ruddlesden–Popper (RP) perovskite and high photovoltaic performance is successfully demonstrated. It is found that an ultrathin conjugated polymer (PM6) layer could passivate the surface defects of perovskite film, tuning the energy level and suppress the nonradiative recombination loss, leading to efficient interface contact between RP perovskite and organic photoactive layers, boosting the open-circuit voltage from 1.06 to 1.12 V and the efficiency from 17.23% to 19.15%. Importantly, the optimized device shows extended photocurrent response to 930 nm with a peak intensity close to 50% from 800 to 931 nm. The results indicate that interface passivation using a functionalized polymer could be an efficient strategy to improve the photovoltaic performance of integrated devices.