Effect of tellurium addition on the optical and physical properties of germanium selenide glassy semiconductors

Thin films of the glasses Ge₁₀ Se_90−x Te_x (0 ≤ x ≥ 40) have been prepared by melt quenching technique; thin films were evaporated at a pressure of ≈10⁻⁴ Pa. The optical absorption behavior of these thin films was studied from the reflection and transmission spectrum in the spectral range 200-1200 nm. The optical constants i.e optical band gap (E_opt), absorption coefficient, refractive index (n) are calculated. The optical band gap has been estimated using Tauc extrapolation and found to decrease with Te content. The Dispersion of refractive index has been studied in terms of Wemple - Di Domenico model. The value of static refraction index has been found to increase with Te content. The distribution of the possible chemical bonds has been calculated. The obtained results were correlated with the character of the chemical bond for the prepared compositions through a study of parameters such as average heat of atomization (Hs), the cohesive energies of the bonds (CE), The mean bond energy <E> and average coordination number (m).     

Influence of ultraviolet irradiation on the optical properties of amorphous Sb10Se90 thin films

Amorphous Sb₁₀Se₉₀ thin films were prepared by thermal evaporation of the bulk glass. The changes in the optical properties (transmittance, optical gap, absorption coefficient, refractive index and extinction coefficient) have been measured in the wavelength range 500-900 nm of virgin and ultraviolet (UV) illuminated films. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It is found that the optical energy gap decreases (photo-darkening) and the refractive index increases with the increase of UV exposure time. The dispersion of the refractive index (n) has been discussed in terms of Wemple-Didomenico single oscillator model. The oscillator energy E₀ and the dispersion energy E_d have been determined and discussed in terms of UV exposure time. The photo-darkening was discussed in terms of some of the current literature models.     

Glass formation and properties of novel GeS2-Sb2S3-In2S3 chalcogenide glasses

Novel chalcogenide glasses based on GeS₂-In₂S₃-Sb₂S₃ system were prepared by conventional melt-quenching method and their physicochemical properties, e.g. glass transition temperature, density, and Vickers micro-hardness, were studied in detail. The results show that the thermal, mechanical, and optical properties depend largely on four-coordinated Ge or In entities and are sensitive to the variation of the connectivity in the GeS₂-In₂S₃-Sb₂S₃ glass network. It is a promising chalcogenide glass system suitable for rare earth doping or crystallization of rare earth doped crystals, which aims at optical applications of IR optical amplifier or efficient solid state laser.     

(100-x)GeS2-x[0.5Ga2S3-0.5CdS]玻璃的电致二阶非线性光学效应的结构依赖性

采用熔融一急冷法制备了(100-x)GeS2-x[0.5Ga2 S3-0.5CdS]硫系玻璃,通过Maker条纹法研究了5kV、280℃、30min的极化条件下,SH强度、二阶非线性系数χ(2)大小的结构依赖性.结果表明,玻璃的SH强度和二阶非线性系数χ(2)与组成的变化关系曲线不呈线性变化,当x=30时,达最大值(χ(2)≈4.36pm/V),是因为随Ga2S3、CdS引入量的增加,玻璃的无规网络的连接程度先逐渐增强然后逐渐减弱,偶极子数量先逐渐减少然后逐渐增加,导致极化后玻璃中重新分布进行取向性调整的偶极子数量不同所致.     

新型GeS2-Ga2S3-KBr系统玻璃的形成及性能

本文研究了GeS2－Ga₂S₃－KBr系统玻璃的形成范围．根据玻璃的红外光谱、可见光谱、特征温度、热膨胀、电导、析晶和耐水性测试结果,该系统玻璃具有较宽的透过波段（0．45～11．5μm）,透过率大于60％;较高的转变温度、热膨胀软化温度（355℃）和析晶温度（593℃）;23℃时玻璃的电导率为10^-9～10^-12S／cm,270℃时电导率为10^-4～10^-6s／cm;玻璃耐水性较好．     

Er3+/Ho3+共掺GeS2-In2S3-CsI玻璃上转换发光和能量传递研究

用熔融急冷法制备了系列Er3+/Ho3+共掺80GeS2-10in2S3-10CsI硫卤玻璃,测试了样品的状态稳定性、拉曼光谱、吸收光谱以及上转换光谱.在该样品中出现了强烈的绿光(526、549nm)和红光(660nm),分别对应于2H11/2-4I15/2(Er3+)、4S3/2→4I15/2(Er3+)十5S2(5...     

Investigation on photoluminescence properties and defect chemistry of GdAlO3:Dy3+ Ba2+ phosphors

GdAlO₃:Dy³⁺ Ba²⁺ phosphors are synthesized by citrate-based sol-gel method. Photoluminescence and positron annihilation studies are used to investigate the emission and defect chemistry of the phosphors respectively. The strong yellow (Dy³⁺) emission properties of phosphors are discussed for various concentrations of Dy³⁺ ions. Upon the addition of Ba²⁺ ion, an enhancement in emission intensity is observed due to the lattice distortions around Dy³⁺ ion. The positron studies indicate the presence of defects at crystallite boundaries, vacancy clusters and large voids in the materials. The influence of Ba²⁺ ion on the photoluminescence and lattice distortion around Dy³⁺ is also explored.     

Bi2O3对堇青石基玻璃性能的影响

研究了Bi2O3的掺入量和热处理制度对微晶玻璃的烧结和介电性能的影响.结果表明Bi2O3的加入和提高热处理温度有效促进了堇青石基微晶玻璃的烧结致密化.烧结样品的介电常数和介质损耗因子是由存在的晶体结构和致密化程度所决定的.样品的介质损耗因子随烧结温度的增加而减少,与样品的气孔率变化曲线相似.950℃以下,随着温度的增加,样品的介电常数亦增加,与样品的密度变化规律相似.这种材料具有低的介电常数(≈5)、低的介质损耗因子(＜0.2%)和低的烧结温度(约900℃),能够与高导电率的金属如Au,Ag/Pd和Cu共烧,是一种潜在的低温共烧基板材料.     

Influence of Al2O3 addition on thermal and structural properties of erbium doped glasses

Changes in the structural properties of Er³⁺ doped soda-lime silicate glasses were investigated as a function of Al₂O₃ content. A combined approach of experimental techniques and molecular dynamic simulations (MD) was used to evaluate the structural features directly correlated to the glass properties. The experimental results in term of density, thermal properties as well as microstructural and mineralogical data showed a significant variation when increasing the alumina content from 10 mol% to 15 mol%. These results were compared to the MD information and discussed: changes in erbium and aluminium local configuration, due to the glass structural evolution as a function of the alumina concentration, have been investigated.     

Heat treatment effect on the structural and optical properties of Ga2Se3-Ga2S3 thin films

The structural properties of the 50 mol% Ga₂Se₃-50 mol% Ga₂S₃ system in thin-film form were studied using an X-ray diffraction technique. As-deposited films had an amorphous nature, whereas films heat treated for 2 h at 400 °C in a vacuum of 10^–2 Pa had a single-phase (cubic) polycrystalline nature with lattice constanta=0.532 nm. The optical properties of Ga₂Se₃-Ga₂S₃ thin films as-deposited and as-heat treated were also studied. It was found that heat treatment strongly affects the optical constants as well as the energy gap, which can be attributed to compositional as well as structural changes.     

Effect of annealing on the structural and optical properties of InSe bilayer thin films

InSe bilayer thin films with different thickness were prepared on to a glass substrate by sequential thermal evaporation. Preparation and post deposition treatment conditions were optimized in order to achieve effective bilayer mixing. The influence of bilayer film thickness and annealing temperature on the structural and optical properties was investigated. The prepared films were characterized by X-ray diffraction analysis, scanning electron microscopy, energy dispersive X-ray analysis, UV-Visible spectroscopy, photoconduction and resistivity measurement. Structural studies show that the material undergoes phase transition with thickness, due to co-existence of many phases. Morphological analysis revealed that Se content plays an important role in determining the surface morphology of the film. It has been observed that grain growth and grain splitting phenomena depend on film thickness and annealing temperature. From the photoconduction measurements, the photocurrent increases rapidly when the sample is illuminated using 135 K Lux of white light. Absorption coefficient is in the order of 10⁴ cm⁻¹, makes the InSe thin film useful for the preparation of absorber layer in hybrid solar cell.     

Lu3+掺杂对20GaF3-15InF3-20CdF2-15ZnF2-20PbF2-10SnF2玻璃抗析晶能力和红外吸收边的影响

以20GaF3-15InF3-20CdG2-15ZnF2-20PbF2-10SnF2氟化镓玻璃为基玻璃,用LuF3替代等摩尔含量的PbF2,以改善玻璃的抗析晶能力.用差示扫描量热法研究了LuF3含量对玻璃热性能和抗析晶能力的影响,用红外透过光谱研究了LuF3含量对玻璃透红外性能的影响.结果表明:在玻璃中掺入摩尔分数为2%的LuF3可以获得最佳的抗析晶能力;LuF3的掺入对玻璃的透红外性能稍有影响,红外截止波长的变化范围仅在10.1μm～10.9μm之间.     

掺Nd2O3高折射率玻璃微球的制备与光学微腔效应研究

制备了掺有稀土发光材料的高折射率玻璃微球,并用XRD、Raman等进行了表征。实验结果表明,该玻璃微球粒径分布范围窄。光学性能好,其折射率约为1．93。用改造的显微拉曼光谱仪测量了微球上转换发光光谱,在其荧光光谱上发现了很强的形貌共振．并用光学微腔理论进行了解释。     

TiO_2掺杂对SiO_2-Al_2O_3-MgO系玻璃结构和力学性能的影响

采用传统熔体冷却法制备TiO_2掺杂量为0~1.8wt%的TiO_2/SiO_2-Al_2O_3-MgO系玻璃,探讨了不同TiO_2质量分数对玻璃体积密度、弯曲强度、压缩强度、压缩模量和结构稳定性的影响规律。结果发现:当TiO_2含量小于1.5wt%时,TiO_2/SiO_2-Al_2O_3-MgO系玻璃的光学带隙随着TiO_2含量的增加而减小、玻璃结构更加稳定,其体积密度、弯曲强度、压缩强度以及压缩模量均随着TiO_2含量的增加而上升;当TiO_2含量超过1.5wt%后,该玻璃体系的结构稳定性和力学性能均随着TiO_2含量增加而下降;当TiO_2的质量分数为1.5wt%时,玻璃的光学带隙达到最小值为3.75eV,各项力学性能达到最优,其弯曲强度为110.36 MPa、压缩强度为240.18 MPa、压缩模量为115.03GPa。适量TiO_2的掺杂,减少了玻璃网络结构中非桥氧的数量,使孤立的岛状网络单元重新聚合,从而显著提高了玻璃的结构稳定性和力学性能;但过量的TiO_2迫使TiO_2/SiO_2-Al_2O_3-MgO系玻璃结构中的桥氧键断裂生成非桥氧,由此显著降低了其结构稳定性和力学性能。     

Synthesis and properties of GeS2-Ga2S3-PbI2 chalcohalide glasses

The glass-forming region in the GeS₂-Ga₂S₃-PbI₂ system was determined and the basic parameters of thermal and optical properties (glass transition temperature, density, microhardness and transmission window) for these glasses have been measured. Better thermal stability originated from their larger difference between T_x and T_g in the range of 107-161 °C, higher glass transition temperatures between 252 and 398 °C and wide optical transmission window from 0.5 to 12.7 μm make these glasses the promising candidate materials for rare earth doped fiber amplifiers and nonlinear optical devices.     

Effect of molybdenum addition on the microstructure and mechanical properties of Cr3C2-20 wt. % Ni cermet

Effect of Mo addition on the microstructure and mechanical properties of Cr₃C₂-20 wt. % Ni cermet was investigated. Three different phases can be seen in the microstructure after adding appropriate molybdenum. The completely undissolved (Cr, Mo)₃C₂ phase maintains the original grain size and effectively prevents the (Cr, Mo)₇C₃ grains from merging and growing. The relative densities of the sintered specimens decrease slightly, while the hardness and bending strength increase firstly and then decrease slightly with the increase of Mo content. The maximum values of the hardness (88·6 HRA) and bending strength (1200 MPa) are achieved with 1 wt. % Mo addition.     

2-氨基-6-乙氧基苯并噻唑类偶氮染料及其金属鏊合物的合成及光学热学性能研究

合成了2-(2-氨基-6-乙氧基苯并噻唑基偶氮)-5-(N,N-二乙基氨基)三氟甲基磺酰苯胺偶氮染料(EBTDATFS)及其与乙酸镍、乙酸钴、乙酸铜、乙酸锌等金属盐鏊合的金属鏊合物.通过红外光谱、紫外-可见吸收光谱和MALDI质谱等对染料及其金属鏊合物进行了结构表征;使用旋涂方法在K9玻璃和抛光的单晶硅基片上制备薄膜;研究了镍金属鏊合物的热学性能;使用椭偏仪研究了Ni和Zn鏊合物的光学常数.结果表明:4种金属鏊合物薄膜最大吸收光谱为621～629nm,且长波边吸收峰陡峭;TGA-DSC测试结果表明镍金属鏊合物具有较高的分解温度(325℃)和较大的分解速率(在16℃温度范围类质量百分比减少了56%),且热重分析曲线陡峭;该染料的Ni和Zn鏊合物具有较大的折射率n和较小的消光系数k.因此该染料的金属鏊合物具有良好的光热性能,有望用于具有超分辨近场结构(Super-RENS)的NVD光盘记录层用材料的研究.     

Mg2Si电子结构及光学性质的研究

采用基于第一性原理的赝势平面波方法系统地计算了Mg2Si基态的电子结构、态密度和光学性质。计算结果表明Mg2Si属于间接带隙半导体，禁带宽度为0．2994eV；其价带主要由Si的3p以及Mg的3s、3p态电子构成，导带主要由Mg的3s、3p以及Si的3p态电子构成；静态介电常数ε1（0）=18．89；折射率n0=4．3460；吸收系数最大峰值为356474．5cm^-1；并利用计算的能带结构和态密度分析了Mg2Si的介电函数、折射率、反射率、吸收系数、光电导率和能量损失函数的计算结果，为Mg2Si的设计与应用提供了理论依据。