Luminescent properties of Al2O3:Ce single crystalline films under synchrotron radiation excitation

The paper is dedicated to study the luminescent and scintillation properties of the Al₂O₃:Ce single crystalline films (SCF) grown by LPE method onto saphire substrates from PbO based flux. The structural quality of SCF samples was investigated by XRD method. For characterization of luminescent properties of Al₂O₃:Ce SCFs the cathodoluminescence spectra, scintillation light yield (LY) and decay kinetics under excitation by α-particles of Pu²³⁹ source were used. We have found that the scintillation LY of Al₂O₃:Ce SCF samples is relatively large and can reach up to 50% of the value realized in the reference YAG:Ce SCF. Using the synchrotron radiation excitation in the 3.7–25 eV range at 10 K we have also determined the basic parameters of the Ce³⁺ luminescence in Al₂O₃ host.     

Luminescence characteristics of LuAG:Pr and YAG:Pr single crystalline films

Emission and excitation spectra and luminescence decay kinetics were studied for Pr³⁺-doped Lu₃Al₅O₁₂ and Y₃Al₅O₁₂ single crystalline films (SCF) grown by the liquid phase epitaxy method from a PbO-based flux. The influence of lead-induced centers on their scintillation characteristics was clarified. It was found that the influence of single Pb²⁺-based centers on the characteristics of Pr³⁺ centers due to the Pb²⁺ → Pr³⁺ energy transfer was weak. However, an overlap of the emission spectra of single and dimer lead-induced centers with the emission spectrum of Pr³⁺ ions, and especially a strong overlap of the 4f–5d₁ absorption band of Pr³⁺ ions with the slow emission of localized excitons in the 290 nm band had a considerable influence on the scintillation characteristics of the Pr³⁺-doped SCF.     

Growth and luminescent properties of Lu2SiO5 and Lu2SiO5:Ce single crystalline films

Single crystalline films (SCF) of Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce (LSO:Ce) silicates with thickness of 2.5-15 μm were crystallized by liquid phase epitaxy method onto undoped LSO substrates from melt-solution based on PbO-B₂O₃ flux. The scintillation and luminescence properties of LSO:Ce SCF were compared with the properties of LSO:Ce single crystal. The peculiarities of luminescence properties of LSO:Ce SCF in comparison with crystal analog can be due to different distribution of Ce³⁺ over the Lu1 and Lu2 positions of LSO host and are further influenced by Pb²⁺ flux-originated contamination.     

Intrinsic and Ce-related luminescence of YAG and YAG:Ce single crystals, single crystalline films and nanopowders

A comparative analysis of the luminescent properties of YAG and YAG:Ce nanopowders (NP) in comparison with single crystalline film (SCF) and single crystal (SC) analogues was performed under excitation by a pulsed synchrotron and X-ray radiation. It was shown that the natural defects concentration in NP was between the SC with a large (0.18–0.19 at.%) concentration of Y_Al antisite defects (AD) and SCF of these garnets where Y_Al AD were completely absent. At the same time, Ce³⁺ doped YAG NP showed luminescent properties close to those of YAG:Ce SCF.     

Scintillation properties of the Ce-doped multicomponent garnet epitaxial films

(Lu,Y,Gd)₃(Al,Ga)₅O₁₂:Ce garnet scintillator single crystalline films were grown onto LuAG, YAG and GGG substrates by liquid phase epitaxy method. Absorption, radioluminescence spectra and photoluminescence excitation, emission spectra, and decay kinetics were measured. Photoelectron yield, its dependence on amplifier shaping time and energy resolution were determined to evaluate scintillation performance. Most of the samples exhibited strong UV emission caused by trapped excitons and/or Gd³⁺ 4f–4f transition. However, emission spectrum of the best performing Gd₂YAl₅O₁₂:Ce is dominated by the Ce³⁺ fast 5d–4f luminescence. This sample has outperformed photoelectron yield of all the garnet films studied so far.     

Studies on sputtering process of multicomponent Zr-Ti-Cu-Ni-Be alloy thin films

Sputter deposition process of a multicomponent Zr-Ti-Cu-Ni-Be metallic alloy has been studied experimentally and by numerical simulations. Monte-Carlo simulations were performed using a model based on thermalization and diffusion of sputtered atoms. Incident energy and angle of sputtered atoms on substrate were obtained from simulations. The incident angular distribution was observed to be a normal distribution at all sputtering pressures. Average incident kinetic energy of the condensing atoms on the substrate was observed to be 0.2-0.3 eV indicating most of them are thermalized. Simulations were extended to predict compositional variations in films prepared at various process conditions. These results were compared with composition of films determined experimentally using Rutherford Backscattering Spectrometry (RBS). Contents of Zr, Ti, Cu and Ni quantified using RBS were in moderate agreement with the simulated composition. Be could not be quantified accurately by RBS largely due to very low energy peak of Be in the spectrum. These studies are shown to be useful in understanding the complexities in multicomponent sputtering.     

MOCVD法制备SnO2单晶薄膜的结构和光学性质

用金属有机物化学气相沉积（MOCVD）法在蓝宝石（0001）衬底上制备出高质量的氧化锡（SnO2）单晶薄膜。对制备薄膜的结构和光学性质进行了研究。制备样品具有纯snO2的四方金红石结构，其外延生长方向为SnO2（100）∥Al2O3（0001）。薄膜均匀、致密，具有很好的取向性和结晶性。透射谱测量结果表明，在可见光区薄膜的绝对透过率达到了90％以上。     

Preparation of crystalline beta barium borate thin films on Sr-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Sr²⁺-doped -BaB₂O₄ (-BBO, the high temperature phase of barium borate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (00l) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (00l) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light.     

Liquid phase epitaxy growth of bismuth-substituted yttrium iron garnet thin films for magneto-optical applications

The novel Bi-substituted rare-earth iron garnet films were grown by the modified liquid phase epitaxy (LPE) technique for use as a 45° Faraday rotator in optical isolators. First, single crystals of Y₃Fe₅O₁₂ (YIG), with a lattice constant of 1.2378 nm, were grown by means of the Czochralski method. Using the seed crystal of YIG instead of the conventional non-magnetic garnet of Gd₃Ga₅O₁₂ as a substrate, a film of BiYbIG was grown by means of the LPE method from Bi₂O₃–B₂O₃ fluxes. The structural, magnetic and magneto-optical properties of BiYbIG LPE film/YIG crystal composite have been investigated using directional X-ray diffraction, electron probe microanalysis, vibrating sample magnetometer and near-infrared transmission spectrometry. The saturation magnetization 4πM_s has been estimated to be approximately 1200 G. The Faraday rotation spectrum was measured by the method of rotating analyzer ellipsometry with the wavelength varying from 800 to 1700 nm. The resultant Bi_0.37Yb_2.63Fe₅O₁₂ LPE film/YIG crystal composite showed an increased Faraday rotation coefficient due to doping Bi³⁺ ions on the dodecahedral sites of the magnetic garnet without increasing absorption loss, therefore a good magneto-optic figure of merit, defined by the ratio of Faraday rotation and optical absorption loss, has been achieved of 21.5 deg/dB and 30.2 deg/dB at 1300 nm and 1550 nm wavelengths, respectively, at room temperature. Since Yb³⁺ ions and Y³⁺ ions provide the opposite contributes to the wideband and temperature characteristic of Faraday rotation, the values of Faraday rotation wavelength and temperature coefficients were reduced to 0.06%/nm and 0.007 deg/°C at 1550 nm wavelength, respectively.     

Structural characterization of TiNxOy/TiO2 single crystalline and nanometric multilayers grown by LP-MOCVD on (110)TiO2

TiO₂/TiN_xO_y superlattices were grown by Low Pressure-Metal-Organic Vapor Phase Epitaxy (LP-MOVPE) technique at deposition temperatures ranking from 650 to 750°C. The growth was performed on top of TiO₂(110) rutile substrates. Intense peaks observed in the X-rays rocking curves and θ-2θ diffraction patterns show the presence of crystalline epilayers. The TiN_xO_y layers were grown in a (200) cubic structure on the (110) quadratic TiO₂ epilayer structure. Transmission electron microscopy confirmed the XRD results and showed the formation of periodic and well structured epilayers.     

Preparation of single crystal films of magnetic bubble materials—rare earth yttrium iron gallium garnets by liquid phase epitaxy and their physical properties

The liquid phase epitaxial growth of rare earth-substituted magnetic garnet films suitable for magnetic bubble domain application by both vertical and horizontal dipping using PbO and B₂O₃ as flux is reported. The dependence of various parameters on lead incorporation in the films present as inhomogeneity has been studied.     

用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究

在自制设备上用氢化物气相外延(HVPE)方法在α-Al2O3以及GaN/α-Al2O3衬底上生长了InN薄膜,并对其性质进行了研究.重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了其表面性质,用霍尔测量研究了其电学性质.X射线衍射的结果表明,直接在α-Al2O3上生长得到的是InN多晶薄膜;而在GaN/α-Al2O3上得到的InN薄膜都只有(0002)取向,并且没有金属In或是In相关的团簇存在.综合分析可以发现,在650℃时无法得到InN薄膜,而在温度550℃时生长的InN薄膜具有光滑的表面和最好的晶体质量.     

Fabrication of single crystal PZT thin films on glass substrates

 We have successfully transferred heteroepitaxial Pb(Zr,Ti)O₃ (PZT) thin films from MgO substrates on to glass substrates. The transferred PZT thin films exhibit single crystal structure with ferroelectric properties similar to the as-grown epitaxial films. The transferring process comprises coating of Cr-metallized surface of epitaxial PZT thin films, pressing and cementing the Cr-metallized surface on to the glass substrates by silicone rubber, and removing the MgO substrates by chemical etching. This process realizes a fabrication of high-temperature processed PZT thin films onto the glass at room temperature. The process is also available for the transformation of PZT thin films on organic film sheet. The present transfer process reduces the effects of the inevitable strain and/or constraint to rigid substrates for heteroepitaxial growth and has a potential for integration of single crystal piezoelectric PZT devices onto a wide variety of MEMS.     

Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy

It is shown experimentally that the thickness and composition of Ga_1 − xAl_xSb layers grown by liquid phase epitaxy on Gasb substrates depend on the conductivity type of the substrates. To avoid experimental uncertainties that naturally happen from an experiment to another one, such as changes in the exact liquid composition, growth temperature, temperature gradients, etc., the Ga_1 − xAl_xSb layers have been grown simultaneously from the same liquid solution on N and P type GaSb substrates. The X-ray rocking curves show that for every couple of layers, grown on N and P type substrates, there is a consistent difference between their thickness and composition. The thickness difference has also been verified by optical microscopy. A likely explanation of this effect is a change in surface energy of the substrate induced by the surface electric field normally present in semiconductors.     

Rib waveguides based on Zn-substituted LiNbO3 films grown by liquid phase epitaxy

The fabrication of epitaxially grown Zn-substituted LiNbO₃ (Zn:LiNbO₃) waveguide films and rib waveguides is reported and detailed investigations about microstructure, morphology and optical waveguide properties are provided. Zn:LiNbO₃ films were grown on congruent X-cut LiNbO₃ substrates by a modified liquid phase epitaxy in solid–liquid coexisting solutions. The homogeneously Zn-substituted films exhibit high crystalline perfection and extremely flat surfaces with averaged surface roughness of rms = 0.2–0.3 nm. At the film/substrate interface a Zn-containing transient layer has been observed, which allows the growth of elastically strained Zn:LiNbO₃ film lattices. X-ray diffraction reciprocal-space measurements prove the pseudomorphic film growth. The refractive index difference between substrate and film depends on the zinc substitution content, which increase with rising growth temperatures. For films with 5.3 mol% Zn (Δn_o ≈ +5 × 10⁻³) only ordinary ray propagation was observed, while for films with 7.5 mol% Zn (Δn_o ≈ +8 × 10⁻³, Δn_e ≈ +5 × 10⁻³) both modes, TM and TE propagate. Stress-induced refractive index changes are in the order of Δn ≈ 10⁻⁴. In rib waveguide microstructures singlemode propagation with nearly symmetrical field distribution has been observed. To demonstrate the potential of the proton exchange-assisted dry-etching technique interferometer microstructures were fabricated.     

The influence of orientation on the photoluminescence behavior of ZnO thin films obtained by chemical solution deposition

A new type of ZnO thin films synthesized from chemical solution deposition at low temperature has been presented. X-ray powder diffraction and field emission scanning electron microscopy investigation reveal that the novel structured ZnO film is uniform and its [0001] direction is parallel to the substrate. The photoluminescence spectrum of this film shows strong ultraviolet band-gap emission and weak defect-related visible emission comparing to that of [0001]-oriented film, indicating high crystal quality of the non-[0001]-oriented ZnO film.     

热处理对STO铁电薄膜微结构的影响

系统研究了 CFA与 RTA两种热处理方式以及热处理温度和时间对 STO 薄膜微结构的影响。STO薄膜采用脉冲激光沉积法(PLD)制备。采用原子力显微镜(AFM)和XRD分别对薄膜的表面形貌和晶粒结构进行分析。结果表明,在热处理温度 650~800℃范围内,相对于 CFA、STO薄膜经 RTA热处理后,薄膜表面晶粒大小分布均匀、致密。两种热处理方法都使薄膜的晶粒直径随温度升高而增大,并且温度越高,薄膜的晶形越完整,同样热处理温度下,RTA与CFA相比薄膜的晶粒较小, 两种热处理方法的最大晶粒尺寸都<120nm。但XRD分析结果表明,在相同热处理温度下,CFA 热处理的结晶转化率较 RTA 热处理要高。在一定范围内,RTA热处理时间对薄膜晶粒尺寸影响不大,热处理时间越长,晶粒更加完整,表面更加均匀平整,结晶转化率越高。     

Mechanical, morphological and thermal properties of in situ ternary composites based on poly(ether imide), silicone rubber and liquid crystalline polymer

A compatibilization method for improving the mechanical and thermal properties of thermoplastic/thermotropic liquid crystalline polymer (LCP) blends has been tested in blends of poly(ether imide), PEI, with a thermotropic copolyester (Vectra B-950). It is based on the addition of a third component, a functionalized elastomer (hydroxy terminated silicone rubber), to the blend that interacts with the matrix polymer and the thermotropic liquid crystalline polymer, facilitates the structural development of the thermotropic liquid crystalline polymers (TLCP) phase by acting as a compatibilizer at the interface. The main properties of blends required are flexibility of material in presence of compatibilizer. The viscosity of the compatibilized in situ composite was increased by the silicone rubber owing to the strong interaction. The coefficient of thermal expansion (CTE) of PEI/TLCP blend becomes lowered when the content of silicone rubber is increased. Morphological observation showed that the addition of compatibilizer significantly reduced the size of the dispersed LCP phase and improved their dispersion within the matrix. Measurement of the tensile properties shows increased strength as well as enhanced modulus and elongation when PEI/TLCP blend is properly compatibilized. This is attributed to fine fibril generation induced by the addition of compatibilizer.     

Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.