共查询到20条相似文献,搜索用时 15 毫秒
1.
2.
3.
在InGaAs/GaAs量子阱中生长了两组InAs量子点样品,用扫描电子显微镜(SEM)测量发现,量子点呈棱状结构,而不是通常的金字塔结构,这是由多层结构的应力传递及InGaAs应变层的各向异性引起的.采用变温光致发光谱(TDPL)和时间分辨谱(TRPL)研究了其光致发光稳态和瞬态特性.研究发现,InGaAs量子阱层可以有效地缓冲InAs量子点中的应变,提高量子点的生长质量,可以在室温下探测到较强的发光峰.在量子阱中生长量子点可以获得室温下1 318 nm的发光,并且使其PL谱的半高宽减小到25 meV. 相似文献
4.
5.
6.
利用电子波在阱与垒的界面上的反射及干涉效应,计算了量子阱红外探测器(QWIP)的能带结构,并对其适用性进行了分析和讨论。通过与K-P模型比较发现,本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下,用两种方法计算得到的AlGaAs/GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明,在较宽的范围内,本方法对QWIP能带结构的计算是适用且简便的。 相似文献
7.
8.
9.
Photoluminescence Tuning in Stretchable PDMS Film Grafted Doped Core/Multishell Quantum Dots for Anticounterfeiting 下载免费PDF全文
The development of new luminescent materials for anticounterfeiting is of great importance, owing to their unique physical, chemical, and optical properties. The authors report the use of color‐tunable colloidal CdS/ZnS/ZnS:Mn2+/ZnS core/multishell quantum dots (QDs)‐functionalized luminescent polydimethylsiloxane film (LPF) for anticounterfeiting applications. Both luminescent QDs and as‐fabricated, stretchable, and transparent LPF show blue and orange emission simultaneously, which are ascribed to CdS band‐edge emission and the 4T1 → 6A1 transition of Mn2+, respectively; their emission intensity ratios are dependent on the power‐density of a single‐wavelength excitation source. Additionally, photoluminescence tuning of CdS/ZnS/ZnS:Mn2+/ZnS QDs in hexane or embedded in LPF can also be realized under fixed excitation power due to a resonance energy transfer effect. Tunable photoluminescence of these flexible LPF grafted doped core/shell QDs can be finely controlled and easily realized, depending on outer excitation power and intrinsic QD concentration, which is intriguing and inspires the fabrication of many novel applications. 相似文献
10.
Quantum dots (QDs, i.e., semiconductor nanocrystals) can be formed by spontaneous self‐assembly during epitaxial growth of lattice‐mismatched semiconductor systems. InAs QDs embedded in GaInAsP on InP are introduced, which can be continuously wavelength‐tuned over the 1.55 μm region by inserting ultrathin GaAs or GaP interlayers below them. We subsequently introduce a state‐filling optical nonlinearity, which only requires two electron–hole pairs per QD. We employ this nonlinearity for all‐optical switching using a Mach–Zehnder interferometric switch. We find a switching energy as low as 6 fJ. 相似文献
11.
12.
正3.2 Wetting Layer Tailored by Epitaxial Stress Most epitaxial films wet the substrates to var-ying degrees in heteroepitaxy.In the paradigm systems of the QD epitaxial growth,In As/GaAs(001)and Ge/Si(001),the critical wetting layer(WL)for the 相似文献
13.
介绍了GaAs/AlGaAs量子阱红外探测器(Quantum Well Infrared Photodetector, QWIP)的低电阻欧姆接触研究情况。结合热处理工艺,通过测试I-V特性对Ni/AuGe/Au金属体系的不同搭配进行了实验,确定了适合n+ GaAs/AlGaAs的电极体系,并对沉积金属后的热处理条件进行了初步研究。在400 ℃、氮气氛围、60 s的条件下,采用传输线模型计算后,在n+ GaAs(1×1018cm-3)上取得了比接触电阻为3.07×10-5Ω.cm2的实验结果。 相似文献
14.
15.
16.
17.
18.
19.
20.
Semiconductors - Solutions of (Zn, Pb, Mn)S quantum dots with different molar ratios between cations are produced by colloidal synthesis in a methyl methacrylate (MMA) medium. By the thermal... 相似文献