一种可重构双输出微波光子变频器的设计与仿真

提出了一种可重构双输出微波光子变频器,该变频器可以实现上变频、下变频和同相/正交（I/Q）上变频。通过改变偏振复用-双平行马赫曾德尔调制器的驱动信号,可以重构生成上、下变频信号以及上变频的上、下边带信号或矢量信号,且能同时单独输出两路变频信号。利用偏振控制器在正交偏振方向上巧妙地消除了本振信号的正/负一阶光边带,避免了滤波器的使用,进而实现了频率的大范围可调谐。仿真结果表明：所提变频器可在1～59 GHz带宽范围内单独输出两路任意频率的信号,杂散边带抑制比大于30 dB;加载I/Q基带信号可以进行I/Q上变频,生成两路高频64阶正交振幅调制（64QAM）矢量信号,误差矢量幅度小于3.5%。所提变频方案能消除光纤色散引起的功率周期性衰落效应,系统的无杂散动态范围为107.1 dB·Hz2/3。此外,分析了直流偏置电压漂移、电移相器相位不平衡、偏振控制器偏振漂移等非理想因素对变频器性能的影响。     

基于DP-DPMZM的双通道微波光子下变频方案

为了实现多通道的微波光子下变频,提高变频链路性能,提出一种使用单个集成调制器实现的微波光子下变频方案,该方案利用偏振复用特性实现双通道下变频功能。仿真与实验结果表明:当子调制器设置在最小传输点时,可实现载波抑制双边带调制,光载波抑制比达到29 dB;双通道分别独立地将射频信号下变频转换为中频信号,杂散抑制比达30 dB左右,2个通道的无杂散动态范围(SFDR)分别达到110.4 dB·Hz^2/3、113.4 dB·Hz^2/3。     

基于级联外调制器的六倍频微波信号的光学生成技术研究

提出并实验验证了一种基于级联偏振调制器(Po lM)和双平行马赫-曾德尔调制器(DPMZM)的六 倍频微波信号的光学生成方法。PolM在射频(RF)信号调制下,会产生多个光边带,通过调 节偏振控制 器(PC)和检偏器仅获得奇数阶边带,然后通过DPMZM,其中一子MZM调制RF信号,工作在 最大 传输点(MATP),另一子MZM不调制RF信号,从而抑制掉一阶边带,保留三阶边带,经光 电探测器(PD)拍频获得六倍频微波信号。仿真结果表明,在不利用任何光、电滤波器的情况下,调 制器消光比为 理想状态(100dB)时,RF杂散抑制比(RFSSR) 为34dB。即使消光比为非理想状态(30dB)时,生成微波信号的RF SSR仍可以达到21dB。理论分析和实验结果均验证 了方案的可行性。     

基于光载波抑制调制的星间微波光子下变频研究

针对卫星通信中微波信号光学处理问题,建立了星间微波光子下变频系统模型,采用两个双电极马赫-曾德尔调制器(DE-MZM)并联形式,以光载波抑制(DCS)方式实现了星间微波信号的光域放大、传输和下变频。利用贝塞尔函数展开分析了下变频系统中信号和各噪声分量,对射频本振信号功率进行了优化,仿真研究了调制器直流偏置漂移、移相器相移误差和发射光功率对系统性能的影响。结果表明,调制器直流偏置相位漂移小于5℃时输出载噪比(CNR)恶化小于0.05 dB,移相器相移误差小于5℃时输出CNR恶化小于0.02 dB,系统具有较高稳定性;当发射功率为10.48 dB时,输出CNR达31.33 dB,系统能够满足输出CNR要求。     

毫米波宽带高中频单平衡混频器设计与实现

针对毫米波宽带通信、雷达和测试仪器领域的应用需求,提出一种E波段宽带高中频(IF)单平衡混频器。射频(RF)及本振(LO)信号通过多分支宽带加宽波导正交耦合器输入,通过鳍线过渡结构将信号从波导传输模式过渡到微带模式,并提供宽带中频信号及直流接地回路;中频输出低通滤波器可有效抑制LO及RF信号,并为其提供等效接地回路。利用肖特基二极管的非线性实现混频,并通过微带匹配电路最终实现宽带低损耗混频效果。混频器采用57.6、62.4、67.2 GHz 3个点频本振,将67~85 GHz的射频信号分段下变频至9.4~17.8 GHz的中频范围内。测试结果表明,在67~85 GHz射频频率范围内,射频输入功率为-15 dBm,本振输入功率为12 dBm时,混频器变频损耗为7.1~10.1 dB,对组合杂散的抑制在36 dBc以上。     

基于双平行马赫曾德尔调制器和受激布里渊散射效应的十倍频毫米波信号生成

提出了一种基于双平行马赫-曾德尔调制器(DPMZ M)和受激布里渊散射(SBS)效应的10倍频mm 波信号生成方案,具有覆盖频段高和频谱纯度高等优点。在本文方案中,低频率的射频(RF )信号通过DPMZM 对激光器发出的光波进行调制,调节直流偏置电压,使DPMZM的主调制器和两个子调制器均 工作在最小传 输点(MITP),抑制光载波和偶数边带,进一步调节两个子调制器的调制深度和移相器的相 移,抑制一阶和 七阶边带,留下三阶和五阶边带,然后利用SBS效应进行布里渊边带滤波滤除三阶边带,仅 保留五阶边带, 再经光电探测器(PD)拍频即可获得10倍频mm波信号。通过仿真实验,以10 GHz的R F信号为驱 动信号,得到了100GHz的mm波信号,验证了方案的可行性。     

一种改进的载波抑制调制光毫米波信号的产生方案

为了克服光纤无线(ROF)系统中色散对光载波抑制(OCS)调制光毫米波信号传输的影响,提出一种改进的OCS调制方案。使用双驱动马赫-曾德尔调制器(MZM),通过调整两路输入射频信号相位、基带信号增益和直流偏置电压将2.5Gbit/s数据信号仅调制到(OCS)信号的一个边带上传输。理论分析表明,与传统OCS调制光毫米波信号产生方案相比,本文方案解决了色度色散引起的码元走离问题,大大增加了传输距离。仿真实验结果表明,经过110km光纤传输后信号的眼图仍然十分清晰,在BER=10-10条件下,信号经过20、40和60km光纤传输后的功率代价分别为0.78、1.7和1.9dB。     

基于级联马赫-曾德尔调制器的太赫兹通信系统

为了有效解决太赫兹通信系统中信号难以调制,影响通信系统性能的问题,提出了一种基于级联马赫-曾德尔调制器的太赫兹通信系统。将要传递的伪随机不归零码与频率为10GHz的射频本振信号混频后调制到级联马赫-曾德尔调制器上,通过调节两个调制器的偏置电压,使其分别偏置在最大传输点和最小传输点上,得到的光载波信号经过光放大器放大,结合高非线性光纤的四波混频效应,利用相移布喇格光栅进行模式选择,经过光电转换后的太赫兹信号通过基带数据恢复,可以得出该太赫兹通信系统传输的误比特率。结果表明,基于级联马赫-曾德尔调制器结构可以将太赫兹信号的产生与调制结合到一起。该研究对太赫兹通信系统的实用化有一定借鉴意义。     

一种载边比可调单边带全双工光载无线系统

理论分析了一种基于双平行马赫曾德尔调制器(MZM)的2倍频光单边带调制方案,仿真研究了基于该方案的载波重用全双工光载无线(RoF)通信系统性能.合理设置射频驱动信号相移及双平行MZM主调制器偏置电压产生单边带信号,再调整调制指数以实现光载边比ROCS的连续可调谐.讨论了射频信号相移、主调制器偏置电压、双平行MZM消光比...     

基于级联调制器的24倍频毫米波信号产生

为了有效解决高频毫米波信号源产生困难的问题,提出了一种基于级联强度调制器的24倍频可调毫米波信号产生系统.将低频本振信号调制到第一级双平行马赫-曾德尔强度调制器上,分别控制主调制器和子调制器的偏置电压,使其均偏置在最大传输点上,精确控制低频本振信号的幅值和相位,可以对应产生的-4阶和+4阶边带信号,通过光电检测器拍频,得到的8倍频信号调制到第二级马赫-曾德尔调制器上,控制第二级调制器的偏置电压,使其工作在最小传输点上,可以产生-12阶和+12阶边带信号,经过光电转换后可以得到射频驱动信号频率24倍的毫米波信号,当本振信号频率发生改变时,得到的毫米波信号频率对应改变.     

A CMOS Ku-Band 4x Subharmonic Mixer

In this work, the design and measurement of a new 4x subharmonic mixer circuit is presented using CMOS 0.18 m technology. With an RF input signal at 12.1 GHz, and an LO signal at 3.0 GHz, an intermediate frequency of 100 MHz is produced (f_IF = f_RF - 4f_LO). The mixer uses a modified Gilbert-cell topology with octet-phase LO switching transistors to perform the quadruple subharmonic mixing. Included in the design is an active balun for the RF signal and a circuit that generates an octet-phase LO signals from a differential input. The mixer has a conversion gain of approximately 6 dB, 1-dB compression point of -12 dBm, IIP3 of -2 dBm, and IIP2 of 17 dBm. The circuit also exhibits excellent isolation between its ports (e.g. LO-RF: 71 dB, 4LO-RF: 59 dB).     

Design and implementation of a 94 GHz CMOS down-conversion mixer with integrated miniature planar baluns for image radar sensors

A 94 GHz down-conversion mixer for image radar sensors using standard 90 nm CMOS technology is reported. The down-conversion mixer comprises a double-balanced Gilbert cell with peaking inductors between RF transconductance stage and LO switching transistors for conversion gain (CG) enhancement and noise figure suppression, a miniature planar balun for converting the single RF input signals to differential signals, another miniature planar balun for converting the single LO input signals to differential signals, and an IF amplifier. The mixer consumes 22.5 mW and achieves excellent RF-port input reflection coefficient of ?10 to ?35.9 dB for frequencies of 87.6–104.4 GHz, and LO-port input reflection coefficient of ?10 to ?31.9 dB for frequencies of 88.2–110 GHz. In addition, the mixer achieves CG of 4.9–7.9 dB for frequencies of 81.8–105.8 GHz (the corresponding 3-dB CG bandwidth is 24 GHz) and LO–RF isolation of 37.7–47.5 dB for frequencies of 80–110 GHz, one of the best CG and LO–RF isolation results ever reported for a down-conversion mixer with operation frequency around 94 GHz. Furthermore, the mixer achieves an excellent input third-order intercept point of ?3 dBm at 94 GHz. These results demonstrate the proposed down-conversion mixer architecture is promising for 94 GHz image radar sensors.     

5.2/5.7-GHz 48-dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadrupler

A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO₁ and LO₂ signals coherent     

一款集成驱动放大器的低变频损耗混频器设计

采用0.5μm GaAs工艺设计并制造了一款单片集成驱动放大器的低变频损耗混频器.电路主要包括混频部分、巴伦和驱动放大器3个模块.混频器的射频(RF)、本振(LO)频率为4～7 GHz,中频(IF)带宽为DC～2.5 GHz,芯片变频损耗小于7 dB,本振到射频隔离度大于35 dB,本振到中频隔离度大于27 dB.1 dB压缩点输入功率大于11 dBm,输入三阶交调点大于20 dBm.该混频器单片集成一款驱动放大器,解决了无源混频器要求大本振功率的问题,变频功能由串联二极管环实现,巴伦采用螺旋式结构,在实现超低变频损耗和良好隔离度的同时,保持了较小的芯片面积.整体芯片面积为1.1 mm×1.2 mm.     

Low-voltage high-isolation DC-to-RF MEMS switch based on an S-shaped film actuator

This paper presents a new electrostatically actuated microelectromechanical series switch for switching dc to radio frequency (RF) signals. The device is based on a flexible S-shaped film moving between a top and a bottom electrode in touch-mode actuation. This concept, in contrast to most other microelectrochemical systems (MEMS) switches, allows a design with a low actuation voltage independent of the off-state gap height. This makes larger nominal switching contact areas for lower insertion loss possible, by obtaining high isolation in the off-state. The actuation voltages of the first prototype switches are 12 V to open, and 15.8 V to close the metal contact. The RF isolation with a gap distance of 14.2 /spl mu/m is better than -45 dB up to 2 GHz and -30 dB at 15 GHz despite a large nominal switching contact area of 3500 /spl mu/m/sup 2/.     

X波段低变频损耗混频器设计

采用商用肖特基势垒二极管HSMS-2822,研制了低变频损耗、高隔离度X波段单平衡混频器。为实现所需要的混频带宽,本振信号和射频信号采用三分支定向耦合器耦合输入,仿真研究表明其能有效地改善工作频率带宽,提高本振端口与射频端口间的隔离度。通过设计合理的空闲频率回收电路,回收利用空闲频率能量,能有效地降低混频器变频损耗,提高本振信号、射频信号及空闲频率信号到中频端口的隔离度。在10.6GHz,测得最小变频损耗5.67dB;在10～11.5GHz,混频器变频损耗为6.4±0.7dB,变频损耗平坦度好,RF-IF隔离度优于27dB,LO-IF隔离度高于24dB,LO-RF隔离度优于14dB。     

Wideband microstrip balanced mixer

A novel microstrip balanced mixer circuit has been developed with over 40% bandwidth. The circuit uses two coupling rings for RF and LO inputs. A conversion loss of less than 8dB has been achieved for the RF frequency swept from 13 to 23 GHz with an LO signal at 25 GHz.     

A 186 to 212?GHz Downconverter in 90?nm CMOS

The design and measurements of a 200?GHz downconverter in 90?nm standard CMOS are presented. A positive conversion gain of +6.6?dB, a noise figure of 29.9?dB and an output bandwidth of 3?GHz are measured for an LO power of ?14.9?dBm. The conversion gain remains within 3?dB for an RF frequency between 186 and 212?GHz. Downconversion of BPSK and QPSK signals is demonstrated with eye diagrams and constellation plots with data rates over 4?Gbit/s. A mathematical analysis is made of the MOSFETs in the triode region and a new small-signal parameter κ is introduced, which enables the design of the mixing transistors for minimum conversion loss.     

A photonic-link millimeter-wave mixer using cascaded optical modulators and harmonic carrier generation

Efficient frequency conversion into and out of the millimeter wave frequency band has been demonstrated using photonic link signal mixing with cascaded optical modulators. By adjusting the modulator bias point and RF drive power to the modulator introducing the local oscillator signal at f/sub LO/=8.8 GHz, frequency conversions from f/sub s/ to f/sub LO//spl plusmn/f/sub s/, sf/sub LO//spl plusmn/f/sub s/, and 4f/sub LO//spl plusmn/f/sub s/ with respective losses of 4.8, 6.3, and 7.5 dB have been demonstrated. The direct phase noise measurement of the optical RF signal at 2f/sub LO/=17.6 GHz with 1 kHz offset shows -89 dBc/Hz, limited by the RF drive source.