俄歇复合对应变量子阱激光器阈值电流的影响

通过考虑不同因素对压应变和张应变量子阱激光器阈值电流和特征温度的影响,得到了俄歇复合和非俄歇复合对阈值电流起主要作用的转变温度Tc,小于Tc时,主要是非俄歇复合;大于Tc时,主要是俄歇复合,而且张应变量子阱激光器转变温度要比压应变量子阱激光器的转变温度要高;张应变量子阱激光器与压应变量子阱激光器相比,阈值电流更低,特征温度更高。     

温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析

工作在中长波的红外探测器可被广泛应用在空间成像、军事和通信等领域,锑基InAsSb材料由于其特殊的性质是制作长波非致冷光子探测器的理想材料。俄歇复合寿命是影响探测器性能的重要因素之一,文章采用Matlab软件模拟研究了n型和p型InAsxSb1-x材料的俄歇复合寿命随温度、As组分及载流子浓度的变化。对确定的As组分,可通过优化工作温度及载流子浓度获得较长的俄歇复合寿命。当载流子浓度为3.2×1015 cm-3、温度为200K时,n型InAs0.35Sb0.65的俄歇复合寿命最大为2.91×10-9 s。     

InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合

报道了1.3μm InGaAsP/InP双异质结半导体激光器增益光谱和阈值电流的温度特性.实验及分析结果表明,在转折温度T_b以上到室温(255K     

基于无铝单量子阱的大功率半导体激光器

在改进的带有多槽石墨舟的液相外延(LPE)设备上,采用水平快速生长法获得了分别限制单量子阱结构(SCH-SQW),制作了条宽为100μm、腔长为1 mm的激光器,其阈值电流为0.70 A,最高连续输出功率达4 W,斜率效率为1.32 W/A,串联电阻为0.1 Ω,中心波长为808.8 nm.     

TyPe-Ⅱ型中红外发光二极管及激光器的进展情况

目前,中红外器件的应用已越来越广泛。为了更好地了解此类器件的结构和发展状况,本文结合国外在此方向上所取得的结果,对这类器件的结构设计做了比较详细的介绍。这些器件已能在218K温度下连续工作,其功率达到了500mW,78K时的阈值电流密度为31A/cm~2,特征温度也达到了103K。     

具有透明波导的量子阱半导体激光器及其光集成技术

本文论述了具有透明波导结构的量子阱半导体激光器及其光集成技术的其本原理及主要优点。尤其在实现高功率窄光束输出的光集成器件方面更显出其独特的优点。     

具有高特征温度的808 nm大功率半导体激光器

研制出利用液相外延方法生长808 nm InGaAsP/GaAs分别限制单量子阱激光器,其室温连续输出功率达到4 W,室温工作的特征温度达到218 K.     

1.3μm InGaAsP／InP压应变多量子阱激光器的极低阈值（0.56mA）工作

通过优化有源层和采用具有高反射涂层的短腔体，对于１．３μｍ ＩｎＧａＡｓＰ／ＩｎＰ应变ＭＱＷ激光器在室温下（２５℃）获得了０．５６ｍＡ这一创记录的低阈值。     

MBE生长温度对InGaAs／GaAs应变单量子阱激光器性能的影响

采用分子束外延（ＭＢＥ）技术，研制生长了ＩｎＧａＡｓ／ＧａＡｓ应变单量子阱激光器材料，并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明，较高的ＩｎＧａＡｓ生长温度和尽可能短的生长停顿时间，将有利于降低激光器的阈值电流。所外延的激光器材料在２５０μｍ×５００μｍ宽接触、脉冲工作方式下测量的阈电流密度的典型值为１６０ｍＡ／ｃｍ２。用湿法腐蚀制作的４μｍ条宽的脊型波导激光器，阈值电流为１６ｎＡ，外微分量子效率为０４ｍＷ／ｍＡ，激射波长为９７６±２ｎｍ，线性输出功率为１００ｍＷ。     

俄歇复合对同质结InGaAs探测器探测率的影响

通过对InGaAs材料的俄歇(Auger)复合机制的理论分析,给出了少子寿命与材料组分、温度和载流子浓度的关系,从而得到材料参数等对InGaAs探测器的探测率影响的结果,优化材料参数和器件结构可抑制Auger复合机制,提高InGaAs探测器的探测率.     

Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

In this work we present a detailed analysis of chemical beam epitaxy-grown (CBE) InGaAs/InP multi quantum well (MQW) interfaces to explain experimental data from high quality single and multi-QWs. Our results compare well with the best published data we have obtained some outstanding results. For example, the very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve, were obtained even on samples grown in non-optimized conditions. A careful use of growth interruption at the interfaces allows us to obtain monolayer (ml) interfaces. Nevertheless, the switching of the group V element at each interface leads to strain formation. This effect could become dramatic in superlattice structures with periods smaller than about 5 nm and barriers of less than 3–4 nm. More generally, the conditions for the growth of high quality single and multiple QWs is discussed in this work and these will be correlated with fourier transform photoluminesence (FTPL), high resolution x-ray diffraction (HRXRD), absorption, photo-absorption and photo-current (in PIN structures) measurements.     

InGaAs／InP分别限制量子阱激光器的阱数优化设计和实验制备

根据对ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构的注入效率的分析和利用Ｘ射线衍射结ＩｎＧａＡｓＰ－ＩｎＰ２０个周期的多量子阱结构异质界面的研究，设计，制备了４个阱的ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构，利用质子轰击制得条形激光器，阈值电流为１００ｍＡ，直流室温连续工作，单面输出外微分子效率为３６％。     

Energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells

We have studied electron energy relaxation in GaInAs/AlInAs heterojunctions and GaAs/AlGaAs multiple quantum wells using mobility measurements as a function of electric field and temperature, in the range 3K to 300K. The results in the range 3 to 20K show a power loss rate which is dependent on (T_e − T_l), suggesting that the energy relaxation occurs through acoustic phonon scattering. At electron temperatures greater than 20K, the experimental results are modelled using a standard expression for polar optical phonons. This modelling yields 30meV and 31meV for the polar optical phonon energy in GaAs and InGaAs respectively.     

量子阱激光器超晶格缓冲层的研究

在量子阱半导体激光器结构中采用优化超晶格缓冲层来掩埋衬底缺陷，获得了性能优良的激光器。对超晶格缓冲层所具有的“量子阱陷阱效应”进行了理论分析。     

Quantification of thermoreflectance temperature measurements in high-power semiconductor devices—lasers and laser bars

In this paper we present results of the analysis of the thermoreflectance (TR) measurements performed on the high-power laser diodes and laser bar emitting at 808 nm. TR is a modulation technique relying on periodic facet temperature modulation induced by pulsed current supply of the laser. The periodic temperature change of the laser induces variation of the refractive index and consequently modulates probe beam reflectivity. Spatially resolved TR spectroscopy is applied to measure line-scans and maps of temperature distribution at the laser mirrors and emitter facets in laser bar. However, to get the absolute values of temperatures, TR needs calibration. Different calibration methods, such as μ-Raman spectroscopy and in situ determination of TR coefficient (C_TR), will be discussed. The knowledge of temperature distribution at laser facets gives insight into thermal processes occurring at devices’ facets and consequently leads to the increased reliability and substantially longer lifetimes of such structures.     

Temperature effect on polaron recombination in conjugated polymers

The microcosmic mechanism of electroluminescence in polymer light emitting diodes (PLEDs) is the recombination of the oppositely charged polarons. In previous studies, it has been demonstrated that the temperature-induced irregular lattice vibration may have non-negligible influence on polaron dynamics. Nevertheless, there are few reports about thermal effect on recombination process between polaron pair, although it is very important for the performance of PLEDs. In this paper, we adopt the modified one-dimensional tight-binding model, including to which the thermal random force, and explore the temperature effect on polaron collision driven by electric field with different strengths. The dynamical simulation is performed by using the non-adiabatic evolution method. The results show that under the influence of electric field, the oppositely charged polarons could recombine into either an exciton with one lattice distortion, or the mixed state of polaron pair and exciton with two lattice distortions. It depends on both field strength and temperature. Anyway, after including temperature effect, a significant improvement of exciton yield is obtained. In addition, the new-formed exciton could perform a random walk along the polymer chain driven by the thermal random force when its strength is large enough. If we further increase the temperature, the stability of exciton would become worse.     

软杀伤战术激光武器及作用机理的研究

光电对抗技术是随着光电技术在军事领域中的广泛应用应运而生的一门崭新学科,而软杀伤激光武器是其中的重要组成部分。软杀伤激光武器作为光电对抗的一种重要手段,在高技术战争中发挥着重要作用,它是以干扰破坏敌方光电系统或致盲、半致盲敌方人员为目的的激光武器,论述了软杀伤武器的作用机理及未来的发展方向。     

A 1.25 Gbps DC-coupled laser diode driver with VBE compensation technique

A 1.25 Gbps integrated laser diode driver (LDD) driving an edge-emitting laser has been designed and fabricated in 0.35 μm BiCMOS technology. The IC can provide independent bias current (5-100 mA) with automatic power control, and modulation current (4-85 mA) with temperature compensation adjustments to minimize the variation in extinction ratio. This paper proposed an unique modulation output driver configuration which is capable of DC-coupling a laser to the driver at +3.3 V supply voltage; and combined a V_BE compensation circuit, the IC can operate at a wide temperature range (−40 to 85 °C) for date rates up to 1.25 Gbps. V_BE compensation technique is used to compensate for variation in V_BE over the operating temperature range so as to minimize the variations in rise and fall time of modulation output over temperatures.